Datasheet UNR112Y, UNR112X, UNR1124, UNR1123, UNR1122 Datasheet (Panasonic)

Transistors with built-in Resistor

B

C

R1

R2

E

UN1121/1122/1123/1124/112X/112Y

Silicon PNP epitaxial planer transistor

For digital circuits

Features

■

●

Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Resistance by Part Number

■

(R1)(R

●

UN1121 2.2kΩ 2.2kΩ

●

UN1122 4.7kΩ 4.7kΩ

●

UN1123 10kΩ 10kΩ

●

UN1124 2.2kΩ 10kΩ

●

UN112X 0.27kΩ 5kΩ

●

UN112Y 3.1kΩ 4.6kΩ

)

2

0.4

1.0±0.1

6.9±0.1

1.5

1.5 R0.9

R0.9

R0.7

0.85

0.55±0.1 0.45±0.05

123

2.5 2.5

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

1:Base
2:Collector
3:Emitter
M Type Mold Package

1.0

Unit: mm

1.0

4.1±0.2 4.5±0.1

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T

CBO

V

CEO

C

T

j

stg

Internal Connection

–50 V
–50 V

–500 mA

600 mW
150 ˚C

–55 to +150 ˚C

1

Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I

UN112X I

Collector cutoff current I

UN112X I

Emitter
cutoff
current

UN1121 –5
UN1122/112X/112Y I
UN1123/1124 –1

Collector to base voltage V

Forward
current
transfer
ratio

UN1121 40
UN1122/112Y
UN1123/1124 60
UN112X 20

Collector to emitter saturation voltage V

UN112X V

UN112Y V
Output voltage high level V
Output voltage low level V
Transition frequency f

h

CBO

CBO

CEO

CEO

EBO

FE

T

CBO

CE(sat)

CE(sat)

CE(sat)

OH

OL

UN1121 2.2

Input
resis­tance

UN1122 4.7
UN1123 R

1

UN112X 0.27
UN112Y 3.1

Resistance ratio 0.8 1.0 1.2

UN1124

R1/R

UN112X 0.054

UN112Y 0.67

VCB = –50V, IE = 0 –1
VCB = –50V, IE = 0 – 0.1
VCE = –50V, IB = 0 –1
VCE = –50V, IB = 0 – 0.5

VEB = –6V, IC = 0 –2 mA

IC = –10µA, IE = 0 –50 V

50

VCE = –10V, IC = –100mA

IC = –100mA, IB = –5mA – 0.25
IC = –10mA, IB = – 0.3mA – 0.25 V
IC = –50mA, IB = –5mA – 0.15
VCC = –5V, VB = – 0.5V, RL = 500Ω –4.9 V
VCC = –5V, VB = –3.5V, RL = 500Ω – 0.2 V
VCB = –10V, IE = 50mA, f = 200MHz

200 MHz

(–30%) 10 (+30%) kΩ

0.22

2

µA

µA

Common characteristics chart

— Ta

P

T

800

)
mW

(

600

T

400

200

Total power dissipation P

0

0 16040 12080

Ambient temperature Ta (˚C

2

)

Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y

Characteristics charts of UN1121

— V

I

C

–240

–200

)
mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Cob — V

12

)
pF

(

10

ob

8

CE

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA

–0.4mA
–0.3mA
–0.2mA
–0.1mA

CB

f=1MHz

I

=0

E

Ta=25˚C

V

— I

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

CE(sat)

25˚C

–25˚C

C

Ta=75˚C

IC/IB=10

400

FE

300

200

100

Forward current transfer ratio h

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10000

–3000

)

–1000

µA

(

O

–300

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

IN

VO=–5V
Ta=25˚C

)

)

V

(

IN

–100

–30

–10

–3

0

–1 –3

hFE — I

–10 –30 –100 –300 –1000

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

VIN — I

O

VO=–0.2V
Ta=25˚C

)

6

4

2

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN1122

— V

I

C

CE

–300

–250

)

mA

(

–200

C

–150

–100

Collector current I

–50

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA
–0.6mA

–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

–100

–30

–10

Output current I

–3

–1

–0.4

)

–100

)

V

(

–30

CE(sat)

–10

–0.3

–0.1

–0.03

Input voltage VIN (V

V

–3

–1

CE(sat)

25˚C

–25˚C

— I

C

–1.4–1.2–1.0–0.8–0.6

)

IC/IB=10

Ta=75˚C

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

–1 –3 –10 –30 –100

Output current IO (mA

hFE — I

160

VCE=–10V

FE

120

80

40

C

Ta=75˚C

25˚C

Forward current transfer ratio h

)

–25˚C

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10 –30 –100 –300 –1000

Collector current IC (mA

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

)

3

Transistors with built-in Resistor

UN1121/1122/1123/1124/112X/112Y

)
pF

(

ob

Cob — V

24

20

16

12

8

4

CB

f=1MHz

=0

I

E

Ta=25˚C

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN1123

— V

I

C

CE

–240

–200

)
mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA
–0.7mA

–0.6mA
–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

IO — V

–10000

–3000

)

–1000

µA

(

O

–300

–100

–30

–10

Output current I

–3

–1

–0.4

)

–100

)

V

(

–30

CE(sat)

–10

–0.3

–0.1

–0.03

Collector to emitter saturation voltage V

–0.01

)

Input voltage VIN (V

V

CE(sat)

–3

–1

–25˚C

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

25˚C

IN

— I

C

Ta=75˚C

VO=–5V
Ta=25˚C

)

IC/IB=10

)

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–1.4–1.2–1.0–0.8–0.6

–0.01

200

FE

150

100

50

–0.1 –0.3

VCE=–10V

Forward current transfer ratio h

0

–1 –3

VIN — I

–1 –3 –10 –30 –100

O

VO=–0.2V
Ta=25˚C

Output current IO (mA

hFE — I

–10 –30 –100 –300 –1000

C

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

)

)

Cob — V

24

CB

)
pF

(

20

ob

16

12

8

4

Collector output capacitance C

0

–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

4

f=1MHz
I

=0

E

Ta=25˚C

IO — V

–10000

–3000

)

–1000

µA

(

O

–300

–100

–30

–10

Output current I

–3

–1

–0.4

)

Input voltage VIN (V

IN

VO=–5V
Ta=25˚C

–1.4–1.2–1.0–0.8–0.6

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

VIN — I

–1 –3 –10 –30 –100

O

VO=–0.2V
Ta=25˚C

Output current IO (mA

)

Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y

Characteristics charts of UN1124

— V

I

C

–300

–250

)
mA

(

–200

C

–150

–100

Collector current I

–50

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Cob — V

24

)

pF

(

20

ob

16

CE

CB

Ta=25˚C

IB=–1.0mA

–0.9mA
–0.8mA

–0.7mA
–0.6mA

–0.5mA
–0.4mA
–0.3mA

–0.2mA
–0.1mA

f=1MHz

=0

I

E

Ta=25˚C

V

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

CE(sat)

–25˚C

25˚C

— I

C

Ta=75˚C

IC/IB=10

400

350

FE

300

250

200

150

100

Forward current transfer ratio h

50

hFE — I

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10000

–3000

)

–1000

µA

(

O

–300

–10 –30 –100 –300 –1000

Collector current IC (mA

IO — V

IN

VO=–5V
Ta=25˚C

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

VIN — I

–100

–30

)

–10

V

(

IN

–3

O

)

VO=–0.2V
Ta=25˚C

12

8

4

Collector output capacitance C

0
–0.1 –0.3

–1 –3 –10 –30 –100

Collector to base voltage VCB (V

Characteristics charts of UN112X

— V

I

C

CE

–240

–200

)
mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.6mA

–1.4mA
–1.2mA

–1.0mA
–0.8mA

–0.6mA
–0.4mA

–0.2mA

–100

–30

–10

Output current I

–3

–1

–0.4

)

–100

)

V

(

–30

CE(sat)

–10

–0.3

–0.1

–0.03

Input voltage VIN (V

V

–3

–1

CE(sat)

25˚C

— I

Ta=75˚C

C

–1.4–1.2–1.0–0.8–0.6

)

IC/IB=10

–25˚C

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

–1 –3 –10 –30 –100

Output current IO (mA

hFE — I

240

FE

200

160

120

80

40

Forward current transfer ratio h

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

)

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10 –30 –100 –300 –1000

Collector current IC (mA

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

)

5

Transistors with built-in Resistor UN1121/1122/1123/1124/112X/112Y

)
pF

(

ob

Cob — V

24

20

16

12

8

4

CB

f=1MHz
I

=0

E

Ta=25˚C

Collector output capacitance C

0

–3 –10 –30 –100

–1

Collector to base voltage VCB (V

Characteristics charts of UN112Y

— V

I

C

CE

–240

–200

)

mA

(

–160

C

–120

–80

Collector current I

–40

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

Ta=25˚C

IB=–1.2mA

–1.0mA

–0.8mA

–0.6mA

–0.4mA

–0.2mA

VIN — I

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

–100

)

V

(

–30

CE(sat)

–10

–3

–1

–0.3

–0.1

–0.03

–1 –3 –10 –30 –100

Output current IO (mA

V

CE(sat)

25˚C

O

— I

Ta=75˚C

–25˚C

VO=–0.2V
Ta=25˚C

C

IC/IB=10

)

hFE — I

240

FE

200

160

120

80

40

Forward current transfer ratio h

C

VCE=–10V

Ta=75˚C

25˚C

–25˚C

Collector to emitter saturation voltage V

–0.01

–1 –3

)

–10 –30 –100 –300 –1000

Collector current IC (mA

)

0

–1 –3

–10 –30 –100 –300 –1000

Collector current IC (mA

)

Cob — V

24

CB

)
pF

(

20

ob

16

12

8

4

Collector output capacitance C

0

–3 –10 –30 –100

–1

Collector to base voltage VCB (V

6

f=1MHz
I

=0

E

Ta=25˚C

VIN — I

–100

–30

)

–10

V

(

IN

–3

–1

–0.3

Input voltage V

–0.1

–0.03

–0.01

–0.1 –0.3

)

–1 –3 –10 –30 –100

Output current IO (mA

O

VO=–0.2V
Ta=25˚C

)