Page 1
Small Signal Transistor Arrays
0.8
0.2
+0.1
–0.05
12˚
6˚
7.7±0.3
0.5
0 to 0.1
45˚
14-0.4±0.1
6.5±0.3
5.5±0.3
1.5±0.1
1
78
14
12˚
0.5±0.2
12-0.9±0.1
6˚
1
2
3
4
5
6
7
14
13
12
11
10
9
8
UN216
Transistor array to drive the small motor
Features
■
●
Small and lightweight
●
Low power consumption (low V
●
Low-voltage drive
●
With 6 elements incorporated. (SO–14)
Applications
■
●
Video cameras
●
Cameras
●
Portable CD players
●
Small motor drive circuits in general for electronic equipment.
Absolute Maximum Ratings (Ta=25±2˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage
Emitter to base voltage V
Collector current I
Total power dissipation PT* 0.5 W
Junction temperature T
Storage temperature T
Note: ± marks used above: +: NPN part, –: PNP part
* TC = 25˚C only when the elements are active
CBO
V
CEO
EBO
C
j
stg
transistor used)
CE(sat)
±12 V
±10 V
±7V
±3A
150 ˚C
–55 to +150 ˚C
Unit: mm
SO–14 Package
Internal Connection
1
Page 2
Small Signal Transistor Arrays UN216
Electrical Characteristics (Ta=25±2˚C)
■
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Forward voltage (DC) V
*Pulse measurement
CBO
CBO
CEO
EBO
FE
V
CE(sat)1
T
ob
F
(NPN) VCB = 10V 1
(PNP) VCB = –10V –1
(NPN) IC = 10µA12
(PNP) IC = –10µA –12
(NPN) IC = 1mA 10
(PNP) IC = –1mA –10
(NPN) IE = 10µA7
(PNP) IE = –10µA–7
(NPN) VCE = 1V, IC = 0.5A* 200 800
(PNP) VCE = –1V, IC = – 0.5A* 200 800
(NPN) IC = 2A, IB = 50mA 0.25
(PNP) IC = –2A, IB = –50mA – 0.45
(NPN) VCB = 6V, IE = –50mA, f = 200MHz
(PNP) VCB = –6V, IE = 50mA, f = 200MHz
150
150
(NPN) VCB = 10V, IE = 0, f = 1MHz 50
(PNP) VCB = 10V, IE = 0, f = 1MHz 65
(NPN) IF = 1A 1.5
(PNP) IF = –1A 1.5
µA
V
V
V
V
MHz
pF
V
Characteristics charts of PNP transistor block
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
2
–6
–5
)
A
(
–4
C
–3
–2
IB=–8mA
Collector current I
–1
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
CE
–7mA
–6mA
Ta=25˚C
–5mA
–4mA
–3mA
–2mA
–1mA
IC — V
BE
–6
–5
)
A
(
–4
C
–3
–2
25˚C
Ta=75˚C –25˚C
VCE=–1V
Collector current I
–1
0
0 –2.4–0.4 –2.0–0.8 –1.6–1.2
)
Base to emitter voltage VBE (V
)
Page 3
Small Signal Transistor Arrays
V
— I
CE(sat)
–10
)
V
(
–3
CE(sat)
–1
–0.3
–0.1
–0.03
–0.01
–0.003
Collector to emitter saturation voltage V
–0.001
–0.01 –0.03
–0.1 –0.3 –1 –3 –10
Collector current IC (A
Characteristics charts of NPN transistor block
25˚C
C
IC/IB=40
Ta=75˚C
–25˚C
)
hFE — I
C
800
700
FE
600
500
Ta=75˚C
25˚C
400
–25˚C
300
200
Forward current transfer ratio h
100
0
–0.01 –0.03 –0.1 –0.3 –1 –3 –10
Collector current IC (A
VCE=–1V
)
UN216
Cob — V
320
)
pF
280
(
ob
240
200
160
120
80
40
Collector output capacitance C
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V
CB
f=1MHz
I
E
Ta=25˚C
=0
)
— Ta IC — V
P
T
0.6
)
0.5
W
(
T
0.4
0.3
0.2
0.1
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
V
— I
CE(sat)
10
)
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
Collector to emitter saturation voltage V
0.001
0.01 0.03
Ta=75˚C
25˚C
–25˚C
0.1 0.3 1 3 10
Collector current IC (A
)
C
IC/IB=40
)
CE
3.0
2.5
)
A
(
2.0
C
1.5
1.0
Collector current I
0.5
0
0615243
Collector to emitter voltage VCE (V
hFE — I
C
800
700
FE
600
500
400
300
200
Forward current transfer ratio h
100
0
0.01 0.03 0.1 0.3 1 3 10
Ta=75˚C
25˚C
–25˚C
Collector current IC (A
Ta=25˚C
IB=8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
VCE=1V
)
IC — V
BE
6
5
)
A
(
4
C
3
2
25˚C
Ta=75˚C –25˚C
VCE=1V
Collector current I
1
0
02.40.4 2.00.8 1.61.2
f=1MHz
=0
I
E
Ta=25˚C
)
)
)
Base to emitter voltage VBE (V
Cob — V
160
)
pF
140
(
ob
120
100
80
60
40
20
Collector output capacitance C
0
0.1 0.3 1 3 10 30 100
CB
Collector to base voltage VCB (V
3
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