Page 1
EMY1 / UMY1N / FMY1A
Transistors
Emitter common (dual transistors)
EMY1 / UMY1N / FMY1A
zFeatures
1) Includes a 2SA1037AK and a 2SC2412K transistor in
a EMT or UMT or SMT package.
2) PNP and NPN transistors have common emitters.
3) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
PNP / NPN silicon transistor
zEquivalent circuit
EMY1 / UMY1N FMY1A
(3) (2) (1)
Tr
2
(4)
Tr
1
(5)
(3) (4) (5)
Tr
2
(2)
Tr
1
(1)
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
V
V
Collector current
Power
dissipation
EMY1, UMY1N 150 (TOTAL)
FMY1A 300 (TOTAL)
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
∗
Tstg −55 to +150
CBO
CEO
EBO
C
I
P
Tj 150
Limits
Tr
1
−60
−50
−6
−150
C
Tr
60
50
150
Unit
2
V
V
7
V
mA
∗1
mW
∗2
°C
°C
zExternal dimensions (Unit : mm)
EMY1
(3)
(4)
(2)
0.22
(1)
(5)
1.2
1.6
0.13
Each lead has same dimensions
ROHM : EMT5
Abbreviated symbol : Y1
UMY1N
ROHM : UMT5
EIAJ : SC-88A
Abbreviated symbol : Y1
0.2
0.1Min.
)
4
(
)
5
(
1.25
2.1
0.15
0~0.1
Each lead has same dimensions
)
3
(
)
1
(
FMY1A
)
)
3
2
(
(
0.3
0.15
0.3to0.6
ROHM : SMT5
EIAJ : SC-74A
Abbreviated symbol : Y1
)
4
(
)
)
1
5
(
(
1.6
2.8
0to0.1
Each lead has same dimensions
0.5
1.0
1.6
0.5
0.5
)
0.65
2
(
1.3
2.0
0.65
0.9
0.7
0.95
2.9
1.9
0.95
1.1
0.8
Rev.A 1/4
Page 2
EMY1 / UMY1N / FMY1A
Transistors
zElectrical characteristics (Ta = 25°C)
1 (PNP)
Tr
Min.
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
BV
BV
V
Cob
CBO
CEO
EBO
I
CBO
I
EBO
CE (sat)
h
FE
f
T
Tr
2 (NPN)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
BV
BV
V
I
CBO
I
EBO
CE (sat)
h
Cob
CBO
CEO
EBO
FE
f
T
zPackaging specifications
Packaging type
T2R
8000
Type
Code TR T148
Basic ordering
unit (pieces)
EMY1
UMY1N
FMY1
zElectrical characteristic curves
1 (PNP)
Tr
−50
Ta=100˚C
25˚C
−20
−40˚C
(mA)
−10
−5
−2
−1
−0.5
COLLECTOR CURRENT : Ic
−0.2
−0.1
−0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
−0.2
BASE TO EMITTER VOLTAGE : VBE
VCE=−6V
(V)
Fig.1 Grounded emitter propagation
characteristics
Typ. Max. Unit Conditions
−
−60
−50
−6
−
−
−
120
− 140 −
−
Min.
60
50
7
−
−
−
120
− 180 −
−
−
VI
C
=
−50µA
−
−
−
−
−
−
4
−
−
−0.1
−0.1
−0.5
560
5
V
V
µA
µA
V
−
MHz
PF
C
=
−1mA
I
E
=
−50µA
I
CB
=
−60V
V
EB
=−6
V
I
C/IB
=
−50mA/−5mA
V
CE
=
−6V, I
V
CE
=
−12V, I
V
CB
=
−12V, I
V
Typ. Max. Unit Conditions
−
−
−
−
−
−
−
2
0.1
0.1
0.4
560
3.5
−
−
−
VI
V
V
µA
µA
V
−
MHz
PF
C
=
50µA
C
=
1mA
I
E
=
50µA
I
CB
V
EB
V
I
C/IB
V
CE
V
CE
V
CB
=
60V
=7
V
=
50mA/5mA
=
6V, I
=
12V, I
=
12V, I
Taping
3000 3000
−10
Ta=25˚C
−8
(mA)
−6
−4
−2
COLLECTOR CURRENT : IC
−0.4
COLLECTOR TO EMITTER VOLTAGE : VCE
−1.20
−0.8 −1.6 −2.0
Fig.2 Grounded emitter output
characteristics ( I )
C
=
−1mA
E
=
2mA, f=100MHz
E
=
0A, f=1MHz
C
=
1mA
E
=−
2mA, f=100MHz
E
=
0A, f=1MHz
−35.0
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−3.5µA
B=0
I
−100
−80
(mA)
C
−60
−40
−20
COLLECTOR CURRENT : I
(V)
Ta=25˚C
−500
−450
−400
−350
−300
0
COLLECTOR TO EMITTER VOLTAGE : V
−250
−200
−150
−100
−50µA
Fig.3 Grounded emitter output
characteristics ( II )
Rev.A 2/4
IB=0
−5−3 −4−2−1
CE
(V)
Page 3
EMY1 / UMY1N / FMY1A
Transistors
500
Ta=25˚C
FE
200
100
DC CURRENT GAIN : h
50
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : I
VCE=−5V
−3V
−1V
C
(mA)
Fig.4 DC current gain vs. collector
current ( I )
−1
(V)
CE (sat)
−0.5
−0.2
Ta=100˚C
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR SATURATION VOLTAGE : V
25˚C
−40˚C
COLLECTOR CURRENT : I
Fig.7 Collector-emitter saturation
voltage vs. collector current ( II )
lC/lB=10
C
(mA)
Tr
2 (NPN)
50
20
(mA)
C
10
5
25˚C
Ta=100˚C
55˚C
−
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : V
VCE=
6V
BE
(V)
Fig.10 Grounded emitter propagation
characteristics
500
FE
200
100
50
DC CURRENT GAIN : h
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : I
Fig.5 DC current gain vs. collector
current ( II )
1000
500
(MHz)
T
200
100
50
TRANSITION FREQUENCY : f
12 510
EMITTER CURRENT : I
Fig.8 Gain bandwidth product vs.
emitter current
100
Ta=25˚C
80
(mA)
C
60
40
20
COLLECTOR CURRENT : I
0
0.4 0.8 1.2 1.6 2.00
COLLECTOR TO EMITTER VOLTAGE : V
Fig.11 Grounded emitter output
characteristics ( I )
C
Ta=25˚C
V
E
(mA)
VCE=−6V
(mA)
CE
=−
12V
50 1000.5 20
0.50mA
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0A
CE
−1
V)
(
CE (sat)
−0.5
−0.2
−0.1
−0.05
−0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.6 Collector-emitter saturation
voltage vs. collector current ( I )
20
(pF)
(pF)
10
: Cib
5
2
-0.5 -20
COLLECTOR OUTPUT CAPACITANCE : Cob
EMITTER INPUT CAPACITANCE
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
10
(V)
Ta=25˚C
8
(mA)
C
6
4
2
COLLECTOR CURRENT : I
0
4 8 12 16
0
COLLECTOR TO EMITTER VOLTAGE : VCE
Fig.12 Grounded emitter output
characteristics ( II )
Ta=25˚C
f=1MHz
I
E=0A
I
C=0A
CB
(V)
EB
(V)
20
IC/I
B
=50
20
10
C
(mA)
Cib
Cob
-1 -2 -5 -10
30µA
27µA
24µA
21µA
18µA
15µA
12µA
9µA
6µA
3µA
IB=0A
Ta=25˚C
(V)
Rev.A 3/4
Page 4
EMY1 / UMY1N / FMY1A
Transistors
500
Ta=25˚C
FE
200
100
50
VCE=5V
3V
1V
500
FE
200
100
50
Ta=100˚C
25˚C
−55˚C
V
CE
=5V
0.5
(V)
CE (sat)
0.2
IC/IB=50
0.1
0.05
20
10
Ta=25
˚C
DC CURRENT GAIN : h
20
10
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
C
(mA)
Fig.13 DC current gain vs. collector
current ( I )
0.5
(V)
CE (sat)
0.2
Ta=100˚C
0.1
0.05
0.02
0.01
0.2
COLLECTOR SATURATION VOLTAGE : V
25˚C
−55˚C
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.16 Collector-emitter saturation
voltage vs. collector current ( II )
C
(mA)
IC/IB=10
(pF)
(pF)
: Cib
20
10
5
Cib
Ta=25˚C
f=1MHz
I
E
=0A
I
C
=0A
DC CURRENT GAIN : h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
Fig.14 DC current gain vs. collector
current ( II )
0.5
(V)
CE (sat)
0.2
0.1
0.05
0.02
0.01
COLLECTOR SATURATION VOLTAGE : V
Ta=100˚C
25˚C
−55˚C
0.2
0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT : I
Fig.17 Collector-emitter saturation
voltage vs. collector current ( III )
(ps)
200
bb'
100
50
C
(mA)
C
(mA)
IC/IB=50
Ta=25
f=32MH
VCB=6V
0.02
0.01
0.2
0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.15 Collector-emitter saturation
voltage vs. collector current ( I )
500
(MHz)
T
200
100
TRANSITION FREQUENCY : f
50
−0.5 −1 −2 −5 −10 −20 −50 −100
EMITTER CURRENT : I
Fig.18 Gain bandwidth product vs.
emitter current
˚C
Z
E
(mA)
C
(mA)
Ta=25˚C
V
CE
=6V
2
1
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob
EMITTER INPUT CAPACITANCE
EMITTER TO BASE VOLTAGE : V
Cob
CB
EB
Fig.19 Collector output capacitance vs.
collector-base voltage
(V)
(V)
20
10
−0.2 −0.5 −1 −2 −5 −10
EMITTER CURRENT : I
BASE COLLECTOR TIME CONSTANT : Cc r
E
(mA)
Fig.20 Base-collector time constant vs.
emitter current
Emitter input capacitance vs.
emitter-base voltage
Rev.A 4/4
Page 5
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Page 6
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