Datasheet UMA1020AM Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
UMA1020AM
Low-voltage dual frequency synthesizer for radio telephones
Product specification Supersedes data of November 1994 File under Integrated Circuits, IC03
1995 Jul 06
Page 2
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones

FEATURES

• Low current from 3 V supply
• Fully programmable RF divider
• 3-line serial interface bus
• Second synthesizer to control first IF or offset loop
frequency
• Independent fully programmable reference dividers for each loop, driven from external crystal oscillator
• Dual phase detector outputs to allow fast frequency switching
• Dual power-down modes.

APPLICATIONS

• 1 to 1.7 GHz mobile telephones
• Portable battery-powered radio equipment.

GENERAL DESCRIPTION

The UMA1020AM BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies.
UMA1020AM
The principal synthesizer operates at RF input frequencies up to 1.7 GHz the auxiliary synthesizer operates at 300 MHz. The auxiliary loop is intended for the first IF or to transmit offset loop-frequency settings. Each synthesizer has a fully programmable reference divider. All divider ratios are supplied via a 3-wire serial programming bus.
Separate power and ground pins are provided to the analog and digital circuits. The ground leads should be externally short-circuited to prevent large currents flowing across the die and thus causing damage. Digital supplies
and V
V
DD1
must be equal to or greater than VDD (i.e. VDD= 3 V and VCC= 5 V for wider tuning range).
The principal synthesizer phase detector uses two charge pumps, one provides normal loop feedback, while the other is only active during fast mode to speed-up switching. The auxiliary loop has a separate phase detector. All charge pump currents (gain) are fixed by an external resistance at pin I filters are used; the charge-pumps function within a wide voltage compliance range to improve the overall system performance.
must also be at the same potential. V
DD2
(pin 14). Only passive loop
SET
CC

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
, V
CC
I
CC+IDD
DD
supply voltage VCC≥ V
DD
principal synthesizer supply current auxiliary synthesizer in
2.7 − 5.5 V
− 9.4 − mA
power-down mode
I
, I
CCPD
f
VCO
f
AI
f
XTAL
f
PPC
f
APC
T
amb
DDPD
principal and auxiliary synthesizer supply current
current in power-down mode per supply − 12 −µA principal input frequency 1000 1500 1700 MHz auxiliary input frequency 20 − 300 MHz crystal reference input frequency 3 − 40 MHz principal phase comparator frequency − 200 − kHz auxiliary phase comparator frequency − 200 − kHz operating ambient temperature −30 − +85 °C
principal and auxiliary synthesizers ON
− 12.1 − mA

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
UMA1020AM SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
1995 Jul 06 2
Page 3
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones

BLOCK DIAGRAM

UMA1020AM
Fig.1 Block diagram.
1995 Jul 06 3
Page 4
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones

PINNING

SYMBOL PIN DESCRIPTION
FAST 1 control input to speed-up main
synthesizer
CPPF 2 principal synthesizer speed-up
charge-pump output
CPP 3 principal synthesizer normal
charge-pump output
V
DD1
V
DD2
PRI 6 1.7 GHz principal synthesizer
DGND 7 digital ground f
XTAL
POFF 9 principal synthesizer power-down
n.c. 10 not connected CLK 11 programming bus clock input DATA 12 programming bus data input E 13 programming bus enable input
I
SET
AUX 15 auxiliary synthesizer frequency input AGND 16 analog ground CPA 17 auxiliary synthesizer charge-pump
V
CC
AOFF 19 auxiliary synthesizer power-down
LOCK 20 in-lock detect output (main PLL); test
4 digital power supply 1 5 digital power supply 2
frequency input
8 common crystal frequency input from
TCXO
input
(active LOW)
14 regulator pin to set the charge-pump
currents
output
18 supply for charge-pump
input
mode output
UMA1020AM
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION Principal synthesizer
Programmable reference and main dividers drive the principal PLL phase detector. Two charge pumps produce phase error current pulses for integration in an external loop filter. A hardwired power-down input POFF (pin 9) ensures that the dividers and phase comparator circuits can be disabled.
1995 Jul 06 4
The PRI input (pin 6) drives a preamplifier to provide the clock to the first divider stage. The preamplifier has a high input impedance, dominated by pin and pad capacitance. The circuit operates with signal levels from 100 mV to 500 mV (RMS), and at frequencies up to 1.7 GHz. The high frequency divider circuits use bipolar transistors, slower bits are CMOS. Divider ratios (512 to 131071) allow up to 2 MHz phase comparison frequency.
Page 5
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones
The reference and main divider outputs are connected to a phase/frequency detector that controls two charge pumps. The two pumps have a common bias-setting current that is set by an external resistance. The ratio between currents in fast and normal operating modes can be programmed via the 3-wire serial bus. The low current pump remains active except in power-down. The high current pump is enabled via the control input FAST (pin 1). By appropriate connection to the loop filter, dual bandwidth loops are provided: short time constant during frequency switching (FAST mode) to speed-up channel changes and low bandwidth in the settled state (on-frequency) to reduce noise and breakthrough levels.
The principal synthesizer speed-up charge pump (CPPF) is controlled by the FAST input in synchronization with phase detector operation in such a way that potential disturbances are minimized. The dead zone (caused by finite time taken to switch the current sources on or off) is cancelled by feedback from the normal pump output to the phase detector thereby improving linearity.
An open drain transistor drives the output pin LOCK (pin 20). It is recommended that the pull-up resistor from this pin to VDD is chosen such that the value is high enough to keep the sink current in the LOW state below 400 µA. The circuit can be programmed to output either the phase error in the principal or auxiliary phase detectors or the combination from both detectors (OR function). The resultant output will be a current pulse with the duration of the selected phase error. By appropriate external filtering and threshold comparison, an out-of-lock or an in-lock flag is generated.

Auxiliary synthesizer

The auxiliary synthesizer has a 14-bit main divider and an 11-bit reference divider. A separate power-down input AOFF (pin 19), disables currents in the auxiliary dividers, phase detector, and charge pump. The auxiliary input signal is amplified and fed to the main divider. The input buffer presents a high impedance, dominated by pin and pad capacitance. First divider stages use bipolar technology operating at input frequencies up to 300 MHz; the slower bits are CMOS. The auxiliary loop phase detector and charge pump use similar circuits to the main loop low-current phase comparator, including dead-zone compensation feedback.
UMA1020AM

Serial programming bus

A simple 3-line unidirectional serial bus is used to program the circuit. The 3 lines are DATA, CLK and The data sent to the device is loaded in bursts framed by E. Programming clock edges and their appropriate data bits are ignored untilE goes active LOW. The programmed information is loaded into the addressed latch when E returns inactive HIGH. Only the last 21 bits serially clocked into the device are retained within the programming register. Additional leading bits are ignored, and no check is made on the number of clock pulses. The fully static CMOS design uses virtually no current when the bus is inactive. It can always capture new programmed data even during power-down of main and auxiliary loops.
However when either principal synthesizer or auxiliary synthesizer or both are powered-on, the presence of a TCXO signal is required at pin 8 (f programming.

Data format

Data is entered with the most significant bit first. The leading bits make up the data field, while the trailing four bits are an address field. The UMA1020AM uses 5 of the 16 available addresses. The data format is shown in Table 1. The first entered bit is p1, the last bit is p21.
The trailing address bits are decoded on the inactive edge
E. This produces an internal load pulse to store the data
of in one of the addressed latches. To ensure that the data is correctly loaded on first power-up, E should be held LOW and only taken HIGH after having programmed an appropriate register. To avoid erroneous divider ratios, the pulse is not allowed during data reads by the frequency dividers.
This condition is guaranteed by respecting a minimum E pulse width after data transfer. The corresponding relationship between data fields and addresses is given in Table 2.
XTAL
E (enable).
) for correct
The auxiliary reference divider is clocked on the opposite edge of the principal reference divider to ensure that active edges arrive at the auxiliary and principal phase detectors at different times. This minimizes the potential for interference between the charge pumps of each loop.
1995 Jul 06 5
Page 6
1995 Jul 06 6
Table 1 Format of programmed data
LAST IN PROGRAMMING REGISTER BIT USAGE FIRST IN
p21 p20 p19 p18 p17 p16 ../.. p2 p1
ADD0 ADD1 ADD2 ADD3 DATA0 DATA1 ../.. DATA15 DATA16
LATCH ADDRESS LSB DATA COEFFICIENT MSB
Table 2 Bit allocation (note 1)
FT REGISTER BIT ALLOCATION LT
p1 p2 p3 p4 p5 p6 p7 p8 p9 p10 p11 p12 p13 p14 p15 p16 p17 p18 p19 p20 p21 dt16 dt15 dt14 dt13 dt12 DATA FIELD dt4 dt3 dt2 dt1 dt0 ADDRESS
TEST BITS X X X X OLP OLA CR1 CR0 X X sPOFF sAOFF X X X X X 0 0 0 1 PM16 PRINCIPAL MAIN DIVIDER COEFFICIENT PM0 0 1 0 0 X X X X X X PR10 PRINCIPAL REFERENCE DIVIDER COEFFICIENT PR0 0 1 0 1 X X X AM13 AUXILIARY MAIN DIVIDER COEFFICIENT AM0 0 1 1 0 X X X X X X AR10 AUXILIARY REFERENCE DIVIDER COEFFICIENT AR0 0 1 1 1
Notes
1. FT = first, LT = last; sPOFF = software power-down for principal synthesizer (1 = OFF); sAOFF = software power-down for auxiliary synthesizer (1 = OFF).
2. The test register should not be programmed with any other value except all zeros for normal operation.
(2)
0000
Philips Semiconductors Product specification
Low-voltage dual frequency
synthesizer for radio telephones
Table 3 Out-of-lock select
OLP OLA OUT-OF-LOCK ON PIN 20
0 0 output disabled 0 1 auxiliary phase error 1 0 principal phase error 1 1 both auxiliary and principal
UMA1020AM
Page 7
Philips Semiconductors Product specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones
Table 4 Fast and normal charge pumps current ratio (note 1)
CR1 CR0 I
00 4×I 01 4×I 10 4×I 11 4×I
CPA
SET SET SET SET
I
4 × I 4 × I 2 × I 2 × I
CPP
SET SET SET SET
Note
V
14
1. I
= ; common bias current for charge pumps.
---------- -
SET
R
ext
Table 5 Power-down modes
AOFF POFF FAST
PRINCIPAL
DIVIDERS
AUXILIARY
DIVIDERS
1 1 X OFF OFF OFF OFF OFF 1 0 0 ON OFF OFF ON OFF 1 0 1 ON OFF OFF ON ON 0 1 X OFF ON ON OFF OFF 0 0 0 ON ON ON ON OFF 0 0 1 ON ON ONONON
I
CPPF
16 × I 32 × I 24 × I 32 × I
PUMP
CPA
SET SET SET SET
PUMP
CPP
I
CPPF:ICPP
4:1
8:1 12 : 1 16 : 1
PUMP
CPPF

Power-down modes

The action of the control inputs on the state of internal blocks is defined by Table 5.
Note that in Table 5, POFF and AOFF can be either the software or hardware power-down signals. The dividers are ON when both hardware and software power-down signals are at logic 0.
When either synthesizer is reactivated after power-down the main and reference dividers of that synthesizer are synchronized to avoid the possibility of random phase errors on power-up.
1995 Jul 06 7
Page 8
Philips Semiconductors Product specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
DD
V
CC
∆V
CC−DD
V
n
V
2, 3, 17
∆V
GND
P
tot
T
stg
T
amb
T
j

HANDLING

digital supply voltage −0.3 +5.5 V analog supply voltage −0.3 +5.5 V difference in voltage between VCC and V
DD
−0.3 +5.5 V voltage at pins 1, 6, 8 to 15, 19 and 20 −0.3 VDD+ 0.3 V voltage at pins 2, 3 and 17 −0.3 VCC+ 0.3 V difference in voltage between AGND and DGND
−0.3 +0.3 V (these pins should be connected together)
total power dissipation − 150 mW storage temperature −55 +125 °C operating ambient temperature −30 +85 °C maximum junction temperature − 95 °C
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air 120 K/W
1995 Jul 06 8
Page 9
Philips Semiconductors Product specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones

CHARACTERISTICS

V
DD1=VDD2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply; pins 4, 5 and 18
V
DD
V
CC
I
DD
I
CC
I
CCPD
RF principal main divider input; pin 6
f
VCO
V
6(rms)
Z
I
C
I
R
pm
f
PPCmax
f
PPCmin
= 2.7 to 5.5 V; VCC= 2.7 to 5.5 V; T
digital supply voltage V analog supply voltage VCC≥ V principal synthesizer digital
supply current auxiliary synthesizer digital supply
current charge pumps supply current VCC= 5.5 V;
, I
current in power-down mode per
DDPD
supply
RF input frequency 1000 1500 1700 MHz AC-coupled input signal level
(RMS value) input impedance (real part) f typical pin input capacitance indicative, not tested − 2 − pF principal main divider ratio 512 − 131071 maximum principal phase
comparator frequency minimum principal phase
comparator frequency
=25°C; unless otherwise specified.
amb
DD1=VDD2
DD
2.7 − 5.5 V
2.7 − 5.5 V
VDD= 5.5 V − 911mA
= 5.5 V − 2.7 4.0 mA
V
DD
− 0.4 1.0 mA
R
=12 kΩ
ext
logic levels 0 or V
DD
− 12 50 µA
Rs=50Ω 100 − 500 mV
= 1.7 GHz − 300 −Ω
VCO
− 2000 − kHz
− 10 − kHz
Auxiliary main divider input; pin 15
f
AI
V
15(rms)
input frequency 20 − 300 MHz AC-coupled input signal level
(RMS value)
Rs=50Ω;
2.7V<VDD< 3.5 V R
=50Ω;
s
3.5V<VDD< 5.5 V
Z
I
C
I
R
am
f
APCmax
input impedance (real part) fAI= 100 MHz − 1 − kΩ typical pin input capacitance indicative, not tested − 2 − pF auxiliary main divider ratio 64 − 16383 maximum auxiliary loop
comparison frequency
f
APCmin
minimum auxiliary loop comparison frequency
1995 Jul 06 9
50 − 500 mV
100 − 500 mV
− 2000 − kHz
− 10 − kHz
Page 10
Philips Semiconductors Product specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Crystal reference dividers input; pin 8
f
XTAL
V
8(rms)
Z
I
C
I
R
pr
R
ar
Charge pump current setting resistor input; pin 14
R
ext
V
14
Charge pump outputs; pins 17, 3 and 2; R
I
Ocp
I
match
I
Lcp
V
cp
Interface logic input signal levels; pins 13, 12, 11 and 1
V
IH
V
IL
I
bias
C
I
Lock detect output signal; pin 20 open-drain output
V
OL
crystal reference input frequency 3 − 40 MHz sinusoidal input signal level
(RMS value) input impedance (real part) f
5MHz<f 3MHz<f
= 30 MHz − 2 − kΩ
XTAL
< 40 MHz 50 − 500 mV
XTAL
< 40 MHz 100 − 500 mV
XTAL
typical pin input capacitance indicative, not tested − 2 − pF principal reference divider ratio 8 − 2047 auxiliary reference divider ratio 8 − 2047
external resistor from pin 14 to
12 − 60 kΩ
ground regulated voltage at pin 14 R
ext
=12kΩ−1.15 − V
ext
=12kΩ
charge pump output current error −25 − +25 % sink-to-source current matching Vcp in range −±5−% charge pump off leakage current Vcp=1⁄2V
CC
−5 ±1+5nA
charge pump voltage compliance 0.4 − VCC− 0.4 V
HIGH level input voltage 0.7V LOW level input voltage −0.3 − 0.3V
− VDD+ 0.3 V
DD
DD
V input bias current logic 1 or logic 0 −5 − +5 µA input capacitance indicative, not tested − 2 − pF
LOW level output voltage I
= 0.4 mA −−0.4 V
sink
1995 Jul 06 10
Page 11
Philips Semiconductors Product specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones

SERIAL BUS TIMING CHARACTERISTICS

V
DD=VCC
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
Serial programming clock; CLK
t
r
t
f
T
cy
Enable programming;
t
START
t
END
t
W
t
SU;E
Register serial input data; DATA
t
SU;DAT
t
HD;DAT
=3V; T
=25°C unless otherwise specified.
amb
input rise time − 10 40 ns input fall time − 10 40 ns clock period 100 −−ns
E
delay to rising clock edge 40 −−ns delay from last falling clock edge −20 −−ns minimum inactive pulse width 4000
(1)
−−ns
enable set-up time to next clock edge 20 −−ns
input data to clock set-up time 20 −−ns input data to clock hold time 20 −−ns
Note
1. The minimum pulse width (t
) can be smaller than 4 µs provided all the following conditions are satisfied:
W
a) Principal main divider input frequency
b) Auxiliary main divider input frequency
c) Reference dividers input frequency
f
XTAL
f
VCO
f
AI
512
>
--------- ­t
W
32
>
-----­t
W
3
>
----- ­t
W
Fig.3 Serial bus timing diagram.
1995 Jul 06 11
Page 12
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones

APPLICATION INFORMATION

UMA1020AM
Fig.4 Typical application block diagram.
1995 Jul 06 12
Page 13
1995 Jul 06 13
BBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBB
B
B
B
B
B
B
B
B
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B
B
B
B
B
B
B
B
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BBBBBBBBBBB
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
B
BBBBBBBBBBB
BBBBBBBBBB
B
B
B
B
B
B
B
B
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Philips Semiconductors Product specification
Low-voltage dual frequency
synthesizer for radio telephones
BBBBBBBBB
BBBBBBBBB
BBBBBBBBB
BBBBBBBBB
BBBBBBBBB
BBBBBBBBB
BBBBBBBBB
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UMA1020AM
Fig.5 Typical test and application diagram.
Page 14
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
20
D
c
y
Z
11
E
H
UMA1020AM

SOT266-1

A
X
v M
E
A
pin 1 index
110
w M
b
e
DIMENSIONS (mm are the original dimensions)
mm
A
max.
1.5
0.1501.4
1.2
0.25
b
3
p
0.32
0.20
UNIT A1A2A
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
p
cD
0.20
6.6
0.13
6.4
0 2.5 5 mm
scale
(1)E(1)
eHELLpQZywv θ
4.5
0.65 1.0 0.2
4.3
6.6
6.2
Q
A
2
A
1
detail X
0.75
0.65
0.45
0.45
(A )
L
p
L
A
3
θ
0.13 0.1
0.48
0.18
(1)
o
10
o
0
OUTLINE VERSION
SOT266-1
IEC JEDEC EIAJ
REFERENCES
1995 Jul 06 14
EUROPEAN
PROJECTION
ISSUE DATE
90-04-05 95-02-25
Page 15
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones
SOLDERING SO or SSOP Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these cases reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all SO and SSOP packages.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
Wave soldering
(order code 9398 652 90011).
UMA1020AM
SSOP Wave soldering isnot recommended for SSOP packages.
This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering technique should be used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate solder thieves at the downstream end.
Even with these conditions, only consider wave soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1).
METHOD (SO OR SSOP) During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications. SO Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
1995 Jul 06 15
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds at 270 to 320 °C.
Page 16
Philips Semiconductors Product specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1995 Jul 06 16
Page 17
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones
UMA1020AM
NOTES
1995 Jul 06 17
Page 18
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones
UMA1020AM
NOTES
1995 Jul 06 18
Page 19
Philips Semiconductors Product specification
Low-voltage dual frequency synthesizer for radio telephones
UMA1020AM
NOTES
1995 Jul 06 19
Page 20
Philips Semiconductors – a worldwide company
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Colombia: IPRELENSO LTDA, Carrera 21 No. 56-17,
77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549
Denmark: Prags Boulevard 80, PB 1919, DK-2300
COPENHAGEN S, Tel. (032)88 2636, Fax. (031)57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. (358)0-615 800, Fax. (358)0-61580 920
France: 4 Rue du Port-aux-Vins, BP317,
92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427
Germany: P.O. Box 10 63 23, 20043 HAMBURG,
Tel. (040)3296-0, Fax. (040)3296 213.
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. (01)4894 339/4894 911, Fax. (01)4814 240
India: Philips INDIA Ltd, Shivsagar Estate, A Block,
Dr. Annie Besant Rd. Worli, Bombay 400 018 Tel. (022)4938 541, Fax. (022)4938 722
Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,
P.O. Box 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 189
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. (01)7640 000, Fax. (01)7640 200
Italy: PHILIPS SEMICONDUCTORS S.r.l.,
Piazza IV Novembre 3, 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557
Japan: Philips Bldg13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. (03)3740 5130, Fax. (03)3740 5077
Korea: Philips House, 260-199 Itaewon-dong,
Yongsan-ku, SEOUL, Tel. (02)709-1412, Fax. (02)709-1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,
SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TX 79905,
Tel. 9-5(800)234-7381, Fax. (708)296-8556
th
floor, Suite 51,
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. (040)783749, Fax. (040)788399 (From 10-10-1995: Tel. (040)2783749, Fax. (040)2788399)
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. (09)849-4160, Fax. (09)849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. (022)74 8000, Fax. (022)74 8341
Pakistan: Philips Electrical Industries of Pakistan Ltd.,
Exchange Bldg. ST-2/A, Block 9, KDA Scheme 5, Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474
Portugal: PHILIPS PORTUGUESA, S.A.,
Rua dr. António Loureiro Borges 5, Arquiparque - Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)4163160/4163333, Fax. (01)4163174/4163366
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. (65)350 2000, Fax. (65)251 6500
South Africa: S.A. PHILIPS Pty Ltd.,
195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430, Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494.
Spain: Balmes 22, 08007 BARCELONA,
Tel. (03)301 6312, Fax. (03)301 42 43
Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,
Tel. (0)8-632 2000, Fax. (0)8-632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. (01)488 2211, Fax. (01)481 77 30
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66, Chung Hsiao West
Road, Sec. 1. Taipeh, Taiwan ROC, P.O. Box 22978, TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (662)398-0141, Fax. (662)398-3319
Turkey:Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (0212)279 27 70, Fax. (0212)282 67 07
United Kingdom: Philips Semiconductors LTD.,
276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. (0181)730-5000, Fax. (0181)754-8421
United States:811 East Arques Avenue, SUNNYVALE,
CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556
Uruguay: Coronel Mora 433, MONTEVIDEO,
Tel. (02)70-4044, Fax. (02)92 0601
Internet: http://www.semiconductors.philips.com/ps/ For all other countries apply to: Philips Semiconductors,
International Marketing and Sales, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 (from 10-10-1995: +31-40-2724825)
SCD41 © Philips Electronics N.V. 1995
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Printed in The Netherlands
413061/1500/02/pp20 Date of release: 1995 Jul 06 Document order number: 9397 750 00194
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