Low-voltage dual frequency
synthesizer for radio telephones
Product specification
Supersedes data of November 1994
File under Integrated Circuits, IC03
1995 Jul 06
Page 2
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
FEATURES
• Low current from 3 V supply
• Fully programmable RF divider
• 3-line serial interface bus
• Second synthesizer to control first IF or offset loop
frequency
• Independent fully programmable reference dividers for
each loop, driven from external crystal oscillator
• Dual phase detector outputs to allow fast frequency
switching
• Dual power-down modes.
APPLICATIONS
• 1 to 1.7 GHz mobile telephones
• Portable battery-powered radio equipment.
GENERAL DESCRIPTION
The UMA1020AM BICMOS device integrates prescalers,
programmable dividers, and phase comparators to
implement two phase-locked loops. The device is
designed to operate from 3 NiCd cells, in pocket phones,
with low current and nominal 5 V supplies.
UMA1020AM
The principal synthesizer operates at RF input frequencies
up to 1.7 GHz the auxiliary synthesizer operates at
300 MHz. The auxiliary loop is intended for the first IF or to
transmit offset loop-frequency settings. Each synthesizer
has a fully programmable reference divider. All divider
ratios are supplied via a 3-wire serial programming bus.
Separate power and ground pins are provided to the
analog and digital circuits. The ground leads should be
externally short-circuited to prevent large currents flowing
across the die and thus causing damage. Digital supplies
and V
V
DD1
must be equal to or greater than VDD (i.e. VDD= 3 V and
VCC= 5 V for wider tuning range).
The principal synthesizer phase detector uses two charge
pumps, one provides normal loop feedback, while the
other is only active during fast mode to speed-up
switching. The auxiliary loop has a separate phase
detector. All charge pump currents (gain) are fixed by an
external resistance at pin I
filters are used; the charge-pumps function within a wide
voltage compliance range to improve the overall system
performance.
must also be at the same potential. V
DD2
(pin 14). Only passive loop
SET
CC
QUICK REFERENCE DATA
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
, V
CC
I
CC+IDD
DD
supply voltageVCC≥ V
DD
principal synthesizer supply currentauxiliary synthesizer in
2.7−5.5V
−9.4−mA
power-down mode
I
, I
CCPD
f
VCO
f
AI
f
XTAL
f
PPC
f
APC
T
amb
DDPD
principal and auxiliary synthesizer
supply current
current in power-down mode per supply−12−µA
principal input frequency100015001700MHz
auxiliary input frequency20−300MHz
crystal reference input frequency3−40MHz
principal phase comparator frequency−200−kHz
auxiliary phase comparator frequency−200−kHz
operating ambient temperature−30−+85°C
principal and auxiliary
synthesizers ON
−12.1−mA
ORDERING INFORMATION
TYPE
NUMBER
NAMEDESCRIPTIONVERSION
PACKAGE
UMA1020AMSSOP20plastic shrink small outline package; 20 leads; body width 4.4 mmSOT266-1
1995 Jul 062
Page 3
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
BLOCK DIAGRAM
UMA1020AM
Fig.1 Block diagram.
1995 Jul 063
Page 4
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
PINNING
SYMBOLPINDESCRIPTION
FAST1control input to speed-up main
synthesizer
CPPF2principal synthesizer speed-up
charge-pump output
CPP3principal synthesizer normal
charge-pump output
V
DD1
V
DD2
PRI61.7 GHz principal synthesizer
DGND7digital ground
f
XTAL
POFF9principal synthesizer power-down
n.c.10not connected
CLK11programming bus clock input
DATA12programming bus data input
E13programming bus enable input
I
SET
AUX15auxiliary synthesizer frequency input
AGND16analog ground
CPA17auxiliary synthesizer charge-pump
V
CC
AOFF19auxiliary synthesizer power-down
LOCK20in-lock detect output (main PLL); test
4digital power supply 1
5digital power supply 2
frequency input
8common crystal frequency input from
TCXO
input
(active LOW)
14regulator pin to set the charge-pump
currents
output
18supply for charge-pump
input
mode output
UMA1020AM
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
Principal synthesizer
Programmable reference and main dividers drive the
principal PLL phase detector. Two charge pumps produce
phase error current pulses for integration in an external
loop filter. A hardwired power-down input POFF (pin 9)
ensures that the dividers and phase comparator circuits
can be disabled.
1995 Jul 064
The PRI input (pin 6) drives a preamplifier to provide the
clock to the first divider stage. The preamplifier has a high
input impedance, dominated by pin and pad capacitance.
The circuit operates with signal levels from 100 mV to
500 mV (RMS), and at frequencies up to 1.7 GHz.
The high frequency divider circuits use bipolar transistors,
slower bits are CMOS. Divider ratios (512 to 131071)
allow up to 2 MHz phase comparison frequency.
Page 5
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
The reference and main divider outputs are connected to
a phase/frequency detector that controls two charge
pumps. The two pumps have a common bias-setting
current that is set by an external resistance. The ratio
between currents in fast and normal operating modes can
be programmed via the 3-wire serial bus. The low current
pump remains active except in power-down. The high
current pump is enabled via the control input FAST (pin 1).
By appropriate connection to the loop filter, dual bandwidth
loops are provided: short time constant during frequency
switching (FAST mode) to speed-up channel changes and
low bandwidth in the settled state (on-frequency) to reduce
noise and breakthrough levels.
The principal synthesizer speed-up charge pump (CPPF)
is controlled by the FAST input in synchronization with
phase detector operation in such a way that potential
disturbances are minimized. The dead zone (caused by
finite time taken to switch the current sources on or off) is
cancelled by feedback from the normal pump output to the
phase detector thereby improving linearity.
An open drain transistor drives the output pin LOCK
(pin 20). It is recommended that the pull-up resistor from
this pin to VDD is chosen such that the value is high enough
to keep the sink current in the LOW state below 400 µA.
The circuit can be programmed to output either the phase
error in the principal or auxiliary phase detectors or the
combination from both detectors (OR function). The
resultant output will be a current pulse with the duration of
the selected phase error. By appropriate external filtering
and threshold comparison, an out-of-lock or an in-lock flag
is generated.
Auxiliary synthesizer
The auxiliary synthesizer has a 14-bit main divider and an
11-bit reference divider. A separate power-down input
AOFF (pin 19), disables currents in the auxiliary dividers,
phase detector, and charge pump. The auxiliary input
signal is amplified and fed to the main divider. The input
buffer presents a high impedance, dominated by pin and
pad capacitance. First divider stages use bipolar
technology operating at input frequencies up to 300 MHz;
the slower bits are CMOS. The auxiliary loop phase
detector and charge pump use similar circuits to the main
loop low-current phase comparator, including dead-zone
compensation feedback.
UMA1020AM
Serial programming bus
A simple 3-line unidirectional serial bus is used to program
the circuit. The 3 lines are DATA, CLK and
The data sent to the device is loaded in bursts framed by
E. Programming clock edges and their appropriate data
bits are ignored untilE goes active LOW. The programmed
information is loaded into the addressed latch when E
returns inactive HIGH. Only the last 21 bits serially clocked
into the device are retained within the programming
register. Additional leading bits are ignored, and no check
is made on the number of clock pulses. The fully static
CMOS design uses virtually no current when the bus is
inactive. It can always capture new programmed data
even during power-down of main and auxiliary loops.
However when either principal synthesizer or auxiliary
synthesizer or both are powered-on, the presence of a
TCXO signal is required at pin 8 (f
programming.
Data format
Data is entered with the most significant bit first. The
leading bits make up the data field, while the trailing four
bits are an address field. The UMA1020AM uses 5 of the
16 available addresses. The data format is shown in
Table 1. The first entered bit is p1, the last bit is p21.
The trailing address bits are decoded on the inactive edge
E. This produces an internal load pulse to store the data
of
in one of the addressed latches. To ensure that the data is
correctly loaded on first power-up, E should be held LOW
and only taken HIGH after having programmed an
appropriate register. To avoid erroneous divider ratios, the
pulse is not allowed during data reads by the frequency
dividers.
This condition is guaranteed by respecting a minimum E
pulse width after data transfer. The corresponding
relationship between data fields and addresses is given in
Table 2.
XTAL
E (enable).
) for correct
The auxiliary reference divider is clocked on the opposite
edge of the principal reference divider to ensure that active
edges arrive at the auxiliary and principal phase detectors
at different times. This minimizes the potential for
interference between the charge pumps of each loop.
The action of the control inputs on the state of internal
blocks is defined by Table 5.
Note that in Table 5, POFF and AOFF can be either the
software or hardware power-down signals. The dividers
are ON when both hardware and software power-down
signals are at logic 0.
When either synthesizer is reactivated after power-down
the main and reference dividers of that synthesizer are
synchronized to avoid the possibility of random phase
errors on power-up.
1995 Jul 067
Page 8
Philips SemiconductorsProduct specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOLPARAMETERMIN.MAX.UNIT
V
DD
V
CC
∆V
CC−DD
V
n
V
2, 3, 17
∆V
GND
P
tot
T
stg
T
amb
T
j
HANDLING
digital supply voltage−0.3+5.5V
analog supply voltage−0.3+5.5V
difference in voltage between VCC and V
DD
−0.3+5.5V
voltage at pins 1, 6, 8 to 15, 19 and 20−0.3VDD+ 0.3V
voltage at pins 2, 3 and 17−0.3VCC+ 0.3V
difference in voltage between AGND and DGND
−0.3+0.3V
(these pins should be connected together)
total power dissipation−150mW
storage temperature−55+125°C
operating ambient temperature−30+85°C
maximum junction temperature−95°C
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOLPARAMETERVALUEUNIT
R
th j-a
thermal resistance from junction to ambient in free air120K/W
1995 Jul 068
Page 9
Philips SemiconductorsProduct specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones
CHARACTERISTICS
V
DD1=VDD2
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Supply; pins 4, 5 and 18
V
DD
V
CC
I
DD
I
CC
I
CCPD
RF principal main divider input; pin 6
f
VCO
V
6(rms)
Z
I
C
I
R
pm
f
PPCmax
f
PPCmin
= 2.7 to 5.5 V; VCC= 2.7 to 5.5 V; T
digital supply voltageV
analog supply voltageVCC≥ V
principal synthesizer digital
supply current
auxiliary synthesizer digital supply
current
charge pumps supply currentVCC= 5.5 V;
, I
current in power-down mode per
DDPD
supply
RF input frequency100015001700MHz
AC-coupled input signal level
(RMS value)
input impedance (real part)f
typical pin input capacitanceindicative, not tested−2−pF
principal main divider ratio512−131071
maximum principal phase
comparator frequency
minimum principal phase
comparator frequency
=25°C; unless otherwise specified.
amb
DD1=VDD2
DD
2.7−5.5V
2.7−5.5V
VDD= 5.5 V−911mA
= 5.5 V−2.74.0mA
V
DD
−0.41.0mA
R
=12 kΩ
ext
logic levels 0 or V
DD
−1250µA
Rs=50Ω100−500mV
= 1.7 GHz−300−Ω
VCO
−2000−kHz
−10−kHz
Auxiliary main divider input; pin 15
f
AI
V
15(rms)
input frequency20−300MHz
AC-coupled input signal level
(RMS value)
Rs=50Ω;
2.7V<VDD< 3.5 V
R
=50Ω;
s
3.5V<VDD< 5.5 V
Z
I
C
I
R
am
f
APCmax
input impedance (real part)fAI= 100 MHz−1−kΩ
typical pin input capacitanceindicative, not tested−2−pF
auxiliary main divider ratio64−16383
maximum auxiliary loop
comparison frequency
f
APCmin
minimum auxiliary loop
comparison frequency
1995 Jul 069
50−500mV
100−500mV
−2000−kHz
−10−kHz
Page 10
Philips SemiconductorsProduct specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Crystal reference dividers input; pin 8
f
XTAL
V
8(rms)
Z
I
C
I
R
pr
R
ar
Charge pump current setting resistor input; pin 14
R
ext
V
14
Charge pump outputs; pins 17, 3 and 2; R
I
Ocp
I
match
I
Lcp
V
cp
Interface logic input signal levels; pins 13, 12, 11 and 1
crystal reference input frequency3−40MHz
sinusoidal input signal level
(RMS value)
input impedance (real part)f
5MHz<f
3MHz<f
= 30 MHz−2−kΩ
XTAL
< 40 MHz 50−500mV
XTAL
< 40 MHz 100−500mV
XTAL
typical pin input capacitanceindicative, not tested−2−pF
principal reference divider ratio8−2047
auxiliary reference divider ratio8−2047
external resistor from pin 14 to
12−60kΩ
ground
regulated voltage at pin 14R
ext
=12kΩ−1.15−V
ext
=12kΩ
charge pump output current error−25−+25%
sink-to-source current matchingVcp in range−±5−%
charge pump off leakage currentVcp=1⁄2V
CC
−5±1+5nA
charge pump voltage compliance0.4−VCC− 0.4 V
HIGH level input voltage0.7V
LOW level input voltage−0.3−0.3V
−VDD+ 0.3 V
DD
DD
V
input bias currentlogic 1 or logic 0−5−+5µA
input capacitanceindicative, not tested−2−pF
LOW level output voltageI
= 0.4 mA−−0.4V
sink
1995 Jul 0610
Page 11
Philips SemiconductorsProduct specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones
SERIAL BUS TIMING CHARACTERISTICS
V
DD=VCC
SYMBOLPARAMETERMIN.TYP.MAX.UNIT
Serial programming clock; CLK
t
r
t
f
T
cy
Enable programming;
t
START
t
END
t
W
t
SU;E
Register serial input data; DATA
t
SU;DAT
t
HD;DAT
=3V; T
=25°C unless otherwise specified.
amb
input rise time−1040ns
input fall time−1040ns
clock period100−−ns
E
delay to rising clock edge40−−ns
delay from last falling clock edge−20−−ns
minimum inactive pulse width4000
(1)
−−ns
enable set-up time to next clock edge20−−ns
input data to clock set-up time20−−ns
input data to clock hold time20−−ns
Note
1. The minimum pulse width (t
) can be smaller than 4 µs provided all the following conditions are satisfied:
W
a) Principal main divider input frequency
b) Auxiliary main divider input frequency
c) Reference dividers input frequency
f
XTAL
f
VCO
f
AI
512
>
--------- t
W
32
>
-----t
W
3
>
----- t
W
Fig.3 Serial bus timing diagram.
1995 Jul 0611
Page 12
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
APPLICATION INFORMATION
UMA1020AM
Fig.4 Typical application block diagram.
1995 Jul 0612
Page 13
1995 Jul 0613
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B
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Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
BBBBBBBBB
BBBBBBBBB
BBBBBBBBB
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UMA1020AM
Fig.5 Typical test and application diagram.
Page 14
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
20
D
c
y
Z
11
E
H
UMA1020AM
SOT266-1
A
X
v M
E
A
pin 1 index
110
w M
b
e
DIMENSIONS (mm are the original dimensions)
mm
A
max.
1.5
0.1501.4
1.2
0.25
b
3
p
0.32
0.20
UNITA1A2A
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
p
cD
0.20
6.6
0.13
6.4
02.55 mm
scale
(1)E(1)
eHELLpQZywv θ
4.5
0.651.00.2
4.3
6.6
6.2
Q
A
2
A
1
detail X
0.75
0.65
0.45
0.45
(A )
L
p
L
A
3
θ
0.130.1
0.48
0.18
(1)
o
10
o
0
OUTLINE
VERSION
SOT266-1
IEC JEDEC EIAJ
REFERENCES
1995 Jul 0614
EUROPEAN
PROJECTION
ISSUE DATE
90-04-05
95-02-25
Page 15
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
SOLDERING SO or SSOP
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
cases reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“IC Package Databook”
Reflow soldering
Reflow soldering techniques are suitable for all SO and
SSOP packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
(order code 9398 652 90011).
UMA1020AM
SSOP
Wave soldering isnot recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
METHOD (SO OR SSOP)
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
SO
Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave) soldering
technique should be used.
• The longitudinal axis of the package footprint must be
parallel to the solder flow.
• The package footprint must incorporate solder thieves at
the downstream end.
1995 Jul 0615
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds at 270 to 320 °C.
Page 16
Philips SemiconductorsProduct specification
Low-voltage dual frequency
UMA1020AM
synthesizer for radio telephones
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Jul 0616
Page 17
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
UMA1020AM
NOTES
1995 Jul 0617
Page 18
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
UMA1020AM
NOTES
1995 Jul 0618
Page 19
Philips SemiconductorsProduct specification
Low-voltage dual frequency
synthesizer for radio telephones
UMA1020AM
NOTES
1995 Jul 0619
Page 20
Philips Semiconductors – a worldwide company
Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)
BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. (02)805 4455, Fax. (02)805 4466
Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,
Tel. (01)60 101-1236, Fax. (01)60 101-1211
Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Printed in The Netherlands
413061/1500/02/pp20Date of release: 1995 Jul 06
Document order number:9397 750 00194
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