Datasheet UMA1015M-C2 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UMA1015M

Low-power dual frequency
synthesizer for radio
communications

Product specification
Supersedes data of October 1994
File under Integrated Circuits, IC03

1995 Jun 22

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

FEATURES

• Two fully programmable RF dividers up to 1.1 GHz

• Fully programmable reference divider up to 35 MHz

• 2 : 1 or 1 : 1 ratio of selectable reference frequencies

• Fast three-line serial bus interface

• Adjustable phase comparator gain

• Programmable out-of-lock indication for both loops

• On-chip voltage doubler

• Low current consumption from 3 V supply

• Separate power-down mode for each synthesizer

• Up to 4 open-drain output ports.

APPLICATIONS

• Cordless telephone

• Hand-held mobile radio.

UMA1015M

GENERAL DESCRIPTION

The UMA1015M is a low-power dual frequency
synthesizer for radio communications which operates in
the 50 to 1100 MHz frequency range. Each synthesizer
consists of a fully programmable main divider, a phase and
frequency detector and a charge pump. There is a fully
programmable reference divider common to both
synthesizers which operates up to 35 MHz. The device is
programmed via a 3-wire serial bus which operates up to
10 MHz. The charge pump currents (gains) are fixed by an
external resistance at pin 20 (I
designed to operate from 2.6 V (3 Ni-Cd cells) to 5.5 V at
low current. Digital supplies V
same potential. The charge pump supply (VCC) can be
provided by an external source or on-chip voltage doubler.
VCC must be equal to or higher than V
synthesizer can be powered-down independently via the
serial bus to save current. It is also possible to power-down
the device via the HPD input (pin 5).

). The BiCMOS device is

SET

DD1

and V

must be at the

DD2

. Each

DD1

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V

V

DD1
CC

CCvd

, V

DD2

digital supply voltage V
charge pump supply

voltage
charge pump supply from

DD1=VDD2

external supply; doubler
disabled; VCC≥ V

DD

2.6 − 5.5 V

2.6 − 6.0 V

doubler enabled − 2V

− 0.6 6.0 V

DD1

voltage doubler

I

DDO1

I

CCO

I

DD1pd

+ I

CCpd

I

DD1pd

f

RFA

+I

, f

+ I

RFB

DDO2

DD2pd

+

operating supply current both synthesizers ON; doubler

current in power-down
mode per supply

current in power-down
mode from supply V

DD

disabled; V
doubler disabled;

V

DD1=VDD2

doubler enabled;
V

DD1=VDD2

DD1=VDD2

= 5.5 V

=3V

RF input frequency for

− 9.6 − mA

= 5.5 V

− 0.01 − mA

− 0.15 − mA

50 − 1100 MHz

each synthesizer

f

XTALIN

f

pc(min)

f

pc(max)

T

amb

crystal input frequency 3 − 35 MHz
minimum phase

comparator frequency
maximum phase

comparator frequency
operating ambient

temperature

fRF= 50 to 1100 MHz;
f

=3to35MHz

XTALIN

fRF= 50 to 1100 MHz;
f

=3to35MHz

XTALIN

synthesizer A

2.6 V ≤ VDD≤ 5.5 V
synthesizer B

2.6 V ≤ V

DD

≤ 4.5 V

synthesizer B

2.6 V ≤ V

DD

≤ 5.0 V

− 10 − kHz

− 750 − kHz

−30 − +85 °C

−30 − +85 °C

0 − +85 °C

1995 Jun 22 2

Philips Semiconductors Product specification

B
B

B
B

Low-power dual frequency synthesizer

UMA1015M

for radio communications

ORDERING INFORMATION

TYPE NUMBER

PINS PIN POSITION MATERIAL CODE

UMA1015M/C2 20 SSOP20 plastic SOT266-1

BLOCK DIAGRAM

PACKAGE

Fig.1 Block diagram.

1995 Jun 22 3

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

PINNING

SYMBOL PIN DESCRIPTION

P1 1 output Port 1
P2 2 output Port 2
CPA 3 charge-pump output synthesizer A
V

DD1

HPD 5 hardware power-down

RFA 6 RF input synthesizer A
DGND 7 digital ground
f

XTALIN

P3 9 output Port 3
f

XTALO

CLK 11 programming bus clock input
DATA 12 programming bus data input
E 13 programming bus enable input

V

DD2

RFB 15 RF input synthesizer B
AGND 16 analog ground to charge pumps
CPB 17 charge pump output synthesizer B
V

CC

P0/OOL 19 Port output 0/out-of-lock output
I

SET

4 digital supply voltage 1

(input LOW = power-down)

8 common crystal frequency input from

TCXO

10 open-drain output of f

XTAL

signal

(active LOW)

14 digital supply voltage 2

18 analog supply to charge pump;

external or voltage doubler output

20 regulator pin to set charge-pump

currents

UMA1015M

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION
Main dividers

Each synthesizer has a fully programmable 17-bit main
divider. The RF input drives a pre-amplifier to provide the
clock to the first divider bit. The pre-amplifier has a high
input impedance, dominated by pin and pad capacitance.
The circuit operates with signal levels from below
50 mV (RMS) up to 250 mV (RMS), and at frequencies up
to 1.1 GHz. The high frequency sections of the divider are
implemented using bipolar transistors, while the slower
section uses CMOS technology. The range of division
ratios is 512 to 131071.

Reference divider

There is a common fully programmable 12-bit reference
divider for the two synthesizers. The input f

XTALIN

drives a

1995 Jun 22 4

pre-amplifier to provide the clock input for the reference
divider. This clock signal is also buffered and output on pin

(open drain). An extra divide-by-2 block allows a

f

XTALO

reference comparison frequency for synthesizer B to be
half that of synthesizer A. This feature is selectable using
the program bit SR. If the programmed reference divider
ratio is R then the ratio for each synthesizer is as given in
Table 1.

The range for the division ratio R is 8 to 4095. Opposite
edges of the divider output are used to drive the phase
detectors to ensure that active edges arrive at the phase
detectors of each synthesizer at different times. This
minimizes the potential for interference between the
charge pumps of each loop. The reference divider consists
of CMOS devices operating beyond 35 MHz.

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

Table 1 Synthesizer ratio of reference divider

SR SYNTHESIZER A SYNTHESIZER B

0R R
1R 2R

Phase comparators

For each synthesizer, the outputs of the main and
reference dividers drive a phase comparator where a
charge pump produces phase error current pulses for
integration in an external loop filter. The charge pump
current is set by an external resistance R
where a temperature-independent voltage of 1.2 V is
generated. R
give an I

SET

should be between 12 kΩ and 60 kΩ (to

SET

of 100 µA and 20 µA respectively).
The charge-pump current, ICP, can be programmed to be
either (12 × I

) or (24 × I

SET

) with the maximum being

SET

2.4 mA. The dead zone, caused by finite switching of
current pulses, is cancelled by an internal delay in the
phase detector thus giving improved linearity. The charge
pump has a separate supply, VCC, which helps to reduce
the interference on the charge pump output from other
parts of the circuit. Also, VCC can be higher than V
wider range on the VCO input is required. VCC must not be
less than V

DD1

.

Voltage doubler

If required, there is a voltage doubler on-chip to supply the
charge pumps at a higher level than the nominal available
supply. The doubler operates from the digital supply V
and is internally limited to a maximum output of 6 V.
An external capacitor is required on pin VCC for smoothing,
the capacitor required to develop the extra voltage is
integrated on-chip. To minimize the noise being introduced
to the charge pump output from the voltage doubler, the
doubler clock is suppressed (provided both loops are
in-lock) for the short time that the charge pumps are active.
The doubler clock (RF/64) is derived from whichever main
divider is operating (synthesizer A has priority). While both
synthesizers are powered down (and the doubler is
enabled), the doubler clock is supplied by a low-current
internal oscillator. The doubler can be disabled by
programming the bit VDON to logic 0, in order to allow an
external charge pump supply to be used.

SET

at pin I

DD1

SET

,

if a

DD1

UMA1015M

output is forced LOW). The lock condition output is
software selectable (see Table 4). An out-of-lock condition
is flagged when the phase error is greater than T
value of which is approximately equal to 80 cycles of the
relevant RF input. The out-of-lock flag is only released
after 8 consecutive reference cycles where the phase error
is less than T
via the serial bus, and the pin P0/OOL can be used as an
output port. Three other port outputs P1, P2 and P3
(open-drain transistors) are also available.

Serial programming bus

A simple 3-line unidirectional serial bus is used to program
the circuit. The 3 lines are DATA, CLK and
data sent to the device is loaded in bursts framed by E.
Programming clock edges are ignored until E goes active
LOW. The programmed information is loaded into the
addressed latch when E returns inactive HIGH. This is
allowed when CLK is in either state without causing any
consequences to the register data. Only the last 21 bits
serially clocked into the device are retained within the
programming register. Additional leading bits are ignored,
and no check is made on the number of clock pulses. The
fully static CMOS design uses virtually no current when the
bus is inactive. It can always capture new programming
data even during power-down of both synthesizers.

However when either synthesizer A or synthesizer B or
both are powered-on, the presence of a TCXO signal is
required at pin 8 (f

,

Data format

Data is entered with the most significant bit first. The
leading bits make up the data field, while the trailing four
bits are an address field. The address bits are decoded on
the rising edge of
to store the data in the addressed latch. To ensure that
data is correctly loaded on first power-up,E should be held
LOW and only taken HIGH after having programmed an
appropriate register. To avoid erroneous divider ratios, the
pulse is inhibited during the period when data is read by
the frequency dividers. This condition is guaranteed by
respecting a minimum E pulse width after data transfer.
The data format and register bit allocations are shown in
Table 2.

. The out-of-lock function can be disabled,

00L

E (enable). The

) for correct programming.

XTALIN

E. This produces an internal load pulse

00L

, the

Out-of-lock indication/output ports

There is a lock detector on-chip for each synthesizer. The
lock condition of each, or both loops, is output via an
open-drain transistor which drives the pin P0/OOL (when
out-of-lock, the transistor is turned on and therefore the

1995 Jun 22 5

1995 Jun 22 6

Table 2 Bit allocation

FIRST REGISTER BIT ALLOCATION LAST

p1 p2 p3 p4 p5 p6 p7 p8 p9 p10 p11 p12 p13 p14 p15 p16 p17 p18 p19 p20 p21
dt16 dt15 dt14 dt13 dt12 DATA FIELD dt4 dt3 dt2 dt1 dt0 ADDRESS
X X VDON PO OLA OLB CRA CRB X X sPDA sPDB P3 P2 P1 X X 0 0 0 1
MA16 SYNTHESIZER A MAIN DIVIDER COEFFICIENT MA0 0 1 0 0
0 0 0 0 SR R11 REFERENCE DIVIDER COEFFICIENT R0 0 1 0 1
MB16 SYNTHESIZER B MAIN DIVIDER COEFFICIENT MB0 0 1 1 0

RESERVED FOR TEST

Note

1. The test register should not be programmed with any other values except all zeros for normal operation.

Table 3 Bit allocation description

SYMBOL DESCRIPTION

sPDA, sPDB software power-down for synthesizers A and B (0 = power-down)
P3, P2, P1 and P0 bits output to pins 1, 2, 9 and 19 (1 = high impedance)
VDON voltage doubler enable (1 = doubler enabled)
OLA, OLB out-of-lock select; selects signal output to pin 19 (see Table4)
CRA, CRB charge pump A/B current to I
SR reference frequency ratio select (see Table 6)

ratio select (see Table 5)

SET

(1)

0000

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

for radio communications

Table 4 Out-of-lock select

OLA OLB OUTPUT AT PIN 19

00P0
0 1 lock status of loop B; OOLB
1 0 lock status of loop A; OOLA
1 1 logic OR function of loops A and B

Table 5 Charge pump current ratio

CRA/CRB CURRENT AT PUMP

0I
1I

=12×I

CP

=24×I

CP

SET
SET

UMA1015M

Table 6 Reference division ratio

SR SYNTHESIZER A SYNTHESIZER B

0R R
1R 2R

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015M

for radio communications

Power-down modes

The device can be powered down either via pin HPD
(active LOW = power-down) or via the serial bus (bits
SPDA and SPDB, logic 0 = power-down). The
synthesizers are powered up when both hardware and
software Power-down signals are at logic 1. When only
one synthesizer is powered down, the functions common
to both will be maintained. When both synthesizers are

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

DD1

, V

DD2

DC range of digital power supply voltage with respect

to DGND
V
∆V
V

CC

CC-DD

n

DC charge pump supply voltage with respect to AGND −0.3 +6.0 V

difference in voltage between VCC and V

DC voltage at pins 1, 2, 5, 6, 8 to 15, 19 and 20 with

respect to DGND
V
∆V

3, 17

GND

DC voltage at pins 3 and 17 with respect to AGND −0.3 VCC+ 0.3 V

difference in voltage between AGND and DGND

(these pins should be connected together)
T
T

stg
amb

storage temperature −55 +125 °C

operating ambient temperature −30 +85 °C

switched off, only the voltage doubler (if enabled) will
remain active drawing a reduced current. An internal
oscillator will drive the doubler in this situation. If both
synthesizers have been in a power-down condition, then
when one or both synthesizers are reactivated, the
reference and main dividers restart in such a way as to
avoid large random phase errors at the phase comparator.

−0.3 +6.0 V

DD1

, V

DD2

−0.3 +6.0 V

−0.3 V

+ 0.3 V

DD1

−0.3 +0.3 V

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.

1995 Jun 22 7

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015M

for radio communications

CHARACTERISTICS

V

DD1=VDD2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply; (V

V

, V

DD1

I

+ I

DD1

I

DDpda

I

DDpdb

I

DDpd

V

CC

I

CC

I

CCpd

= 2.6 to 5.5 V; VCC= 2.6 to 6.0 V; T

, V

DD1

digital supply voltage V

DD2

total digital supply current

DD2

from V

,

total digital supply current
from V

and VCC) voltage doubler disabled, external supply on V

DD2

and V

DD1

DD1

and V

DD2

DD2

one synthesizer in
power-down mode

digital supply current in
power-down mode

charge pump supply
voltage

charge pump supply
current

charge pump supply
current in power-down
mode

with

=25°C; unless otherwise specified.

amb

DD1=VDD2

f

= 12.8 MHz;

XTAL

both synthesizers on;
V

DD1=VDD2

= 12.8 MHz;

f

XTAL

=3V

both synthesizers on;
V

DD1=VDD2

f

= 12.8 MHz; one

XTAL

= 5.5 V

synthesizer powered down;
V

DD1=VDD2

f

= 12.8 MHz; one

XTAL

=3V

synthesizer powered down;
V

DD1=VDD2

= 5.5 V

both synthesizers powered
down; V

VCC≥ V

HPD

DD

=0V

both synthesizers on and in
lock; f

= 12.5 kHz

ref

both synthesizers powered
down

CC

2.6 − 5.5 V

− 8.5 − mA

−−12.5 mA

− 5.5 − mA

−−7.5 mA

−−60 µA

2.6 − 6.0 V

−−25 µA

−−25 µA

Voltage doubler enabled

I

DD

I

DDpd

V

CCvd

total digital supply current
from V

DD1

and V

DD2

total digital supply current
in power-down mode from
V

and V

DD1

DD2

charge pump supply
voltage

f

= 12.8 MHz; both

XTAL

synthesizers on and in lock;
V

=3V;

DD1

f

= 16 MHz

doubler

both synthesizers powered
down; V
V

HPD

DD1

=0V

=3V;

DC current drawn from
VCC=50µA

1995 Jun 22 8

− 8.5 12 mA

− 0.25 0.4 mA

2V

DD1

− 1.2 2V

− 0.6 6.0 V

DD1

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015M

for radio communications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

RF main divider input; RFA and RFB

f

RF

V

RF(rms)

Z

I

C

I

R

pm

Reference divider input; f

f

XTALIN

V

XTALIN(rms)

Z

I

C

I

R

rd

Charge pump current setting resistor input; I

V

SET

Charge pump outputs; CPA and CPB

I

CP

I

LI

RF input frequency 50 − 1100 MHz
RF input signal voltage

(RMS value; AC coupled)

Rs=50Ω;
V

DD1=VDD2

50 − 250 mV

= 2.6 to 3.5 V;

fRF= 400 to 1100 MHz

=50Ω;

R

s

V

DD1=VDD2

= 3.5 to 5.5 V;

100 − 250 mV

fRF= 400 to 1100 MHz
R

=50Ω;

s

V

DD1=VDD2

= 2.6 to 5.5 V;

150 − 400 mV

fRF= 50 to 400 MHz

input impedance
(real part)

fRF= 1 GHz;
indicative, not tested

− 300 −Ω

input capacitance indicative, not tested − 1 − pF
principle main divider ratio 512 − 131071

XTALIN

reference input frequency

3 − 35 MHz

from crystal
sinusoidal input voltage

100 − 500 mV

(RMS value)
input impedance

(real part)

f

XTALIN

= 12.8 MHz;

indicative, not tested

− 10 − kΩ

input capacitance indicative, not tested − 1 − pF
reference divider ratio 8 − 4095

SET

voltage output on I

charge pump sink or
source current

SET

R

=12to60kΩ− 1.2 − V

SET

R

SET

=15kΩ;

1.4 1.9 2.4 mA
CRA/CRB = logic 1;
Icp=I

SET

× 24;

Vcp=0.4VtoVCC− 0.5 V
R

SET

=15kΩ;

0.7 0.96 1.2 mA
CRA/CRB = logic 0;
Icp=I

SET

× 12;

Vcp=0.4VtoVCC− 0.5 V

charge pump off leakage

Vcp= 0.5V

CC

−5 − +5 nA

current

1995 Jun 22 9

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015M

for radio communications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Logic input signal levels; DATA, CLK,

V
V
I
C

IH
IL

bias

I

HIGH level input voltage at logic 1 0.7V
LOW level input voltage at logic 0 −0.3 − 0.3V
input bias currents at logic 1 or logic 0 −5 − +5 µA
input capacitance indicative, not tested − 1 − pF

Port outputs/Out-of-lock; P0/OOL, P1, P2, P3 and f

V

OL

LOW level output voltage I

SERIAL TIMING CHARACTERISTICS

V

DD1

=3V; T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

Serial programming clock; CLK

, t

t

r

f

t

cy

Enable programming;

t

START

t

END

t

W

t

SU;E

input rise and fall times − 10 40 ns
clock period 100 −−ns

E

delay to rising clock edge 40 −−ns
delay from last falling clock edge −20 −−ns
minimum inactive pulse width 4000 −−ns
enable set-up time to next clock edge 20 −−ns

Register serial input data; DATA

t

SU;DAT

t

HD;DAT

input data to clock set-up time 20 −−ns
input data to clock hold time 20 −−ns

E and HPD

DD1

- open drain outputs

XTALO

= 0.4 mA −−0.4 V

sink

− V

DD1

+ 0.3 V

DD1

V

Fig.3 Serial bus timing diagram.

1995 Jun 22 10

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

TYPICAL PERFORMANCE CHARACTERISTICS

UMA1015M

(1) T
(2) T
(3) T

amb
amb
amb

= +85 °C.
= +25 °C.
= −30 °C.

Fig.4 IDD as a function of VDD with both synthesizers on and voltage doubler disabled.

R

=15kΩ; CRA = 1.

SET

(1) VCC= 2.7 V.
(2) VCC= 6.0 V.

Fig.5 Charge pump current as a function of CPA voltage.

1995 Jun 22 11

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

R

=15kΩ; CRA = 1.

SET

(1) T
(2) T
(3) T

amb
amb
amb

= +85 °C.
= +25 °C.
= −30 °C.

UMA1015M

Fig.6 Charge pump 3-state current as a function of CPA voltage.

f

externally terminated by 50 Ω load; AC-coupled.

XTALIN

(1) VDD= 5.5 V.
(2) VDD= 2.7 V.

Fig.7 Crystal input sensitivity as a function of input frequency.

1995 Jun 22 12

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

f

externally terminated by 50 Ω load; AC-coupled.

XTALIN

(1) T
(2) T
(3) T

amb
amb
amb

= −30 °C.
= +25 °C.
= +85 °C.

UMA1015M

Fig.8 Crystal input sensitivity as a function of input frequency with VDD= 5.5 V.

RF input externally terminated by 50 Ω load; AC-coupled.
(1) VDD= 5.5 V.
(2) VDD= 2.7 V.

Fig.9 RF input sensitivity as a function of input frequency.

1995 Jun 22 13

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

RF input externally terminated by 50 Ω load; AC-coupled.
(1) T
(2) T
(3) T

amb
amb
amb

= −30 °C.
= +25 °C.
= +85 °C.

UMA1015M

(1) T
(2) T
(3) T

amb
amb
amb

Fig.10 RF input sensitivity as a function of input frequency with VDD= 5.5 V.

= −30 °C.
= +25 °C.
= +85 °C.

Fig.11 Typical charge pump supply voltage as a function of VDD voltage with voltage doubler enabled.

1995 Jun 22 14

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

handbook, full pagewidth

0.5

0.2

+ j

0

– j

0.2

(1) 68.316 Ω, −92.457 Ω at 1.1 GHz.
(2) 85.914 Ω, −152.08 Ω at 800 MHz.
(3) 102.83 Ω, −354.66 Ω at 400 MHz.
(4) 853.75 Ω, −2.7735 kΩ at 50 MHz.

0.2 0.5 1 105

0.5

UMA1015M

1

2

5

10

4

∞

3

10

2

1

2

1

5

MBE019

Fig.12 Input impedance as a function of input frequency; synthesizer A.

handbook, full pagewidth

(1) 69.293 Ω, −78.027 Ω at 1.1 GHz.
(2) 100.2 Ω, −148.37 Ω at 800 MHz.
(3) 128.22 Ω, −378.81 Ω at 400 MHz.
(4) 674.25 Ω, −3.06 kΩ at 50 MHz.

1

0.5

0.2

+ j

0

– j

0.2

0.2 0.5 1 105

0.5

1

2

5

10

4

∞

3

2

1

2

10

5

MBE020

Fig.13 Input impedance as a function of input frequency; synthesizer B.

1995 Jun 22 15

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

APPLICATION INFORMATION

UMA1015M

Fig.14 Typical application block diagram.

1995 Jun 22 16

1995 Jun 22 17

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B

B

B

B

B

B

B

B

BBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBBB

B

B

B

B

B

B

B

B

BBBBBBBBBB

BBBBBBBBBBB

B

B

B

B

B

B

B

B

B

B

B

B

B

B

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B

B

B

B

B

B

B

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Philips Semiconductors Product specification

Low-power dual frequency synthesizer

for radio communications

Receive frequency = 914 MHz.
1st IF = 58.1125 MHz.
2nd IF = 455 MHz.
VCO sensitivity = 2 MHz/V.
Channel spacing = 12.5 kHz.
Charge pump gain (CPA = CPB) = 1 mA/cycle.

Transmit frequency = 959 MHz.

UMA1015M

Fig.15 Typical CT1 application.

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

UMA1015M

SOT266-1

A

X

v M

E

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

UNIT A1A2A

mm

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

1.5

0.1501.4

1.2

0.25

b

3

p

0.32

0.20

p

cD

0.20

6.6

0.13

6.4

0 2.5 5 mm

scale

(1)E(1)

eHELLpQZywv θ

4.5

0.65 1.0 0.2

4.3

6.6

6.2

Q

A

2

A

1

detail X

0.75

0.65

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE
VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1995 Jun 22 18

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

SOLDERING SO or SSOP
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
cases reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SO and
SSOP packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from 215 to
250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

(order code 9398 652 90011).

UMA1015M

SSOP
Wave soldering is not recommended for SSOP packages.

This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

METHOD (SO OR SSOP)
During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.
SO
Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering
technique should be used.

• The longitudinal axis of the package footprint must be

parallel to the solder flow.

• The package footprint must incorporate solder thieves at

the downstream end.

1995 Jun 22 19

Repairing soldered joints

Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limited to 10 seconds at up to 300 °C. When

using a dedicated G, all other leads can be soldered in one

operation within 2 to 5 seconds at 270 to 320 °C.

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015M

for radio communications

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1995 Jun 22 20

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

NOTES

UMA1015M

1995 Jun 22 21

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

NOTES

UMA1015M

1995 Jun 22 22

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

NOTES

UMA1015M

1995 Jun 22 23

Philips Semiconductors – a worldwide company

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Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

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SCD40 © Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the
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The information presented in this document does not form part of any quotation
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use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.

Printed in The Netherlands

413061/1500/03/pp24 Date of release: 1995 Jun 22
Document order number: 9397750 00177