Datasheet UMA1015AM Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UMA1015AM

Low-power dual frequency
synthesizer for radio
communications

Product specification
Supersedes data of 1997 Jun 10
File under Integrated Circuits, IC17

1997 Sep 03

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

FEATURES

• Two fully programmable RF dividers up to 1.1 GHz

• Fully programmable reference divider up to 35 MHz

• 2 : 1 or 1 : 1 ratio of selectable reference frequencies

• Fast three-line serial bus interface

• Adjustable phase comparator gain

• Programmable out-of-lock indication for both loops

• On-chip voltage doubler

• Low current consumption from 3 V supply

• Separate power-down mode for each synthesizer

• Up to 4 open-drain output ports

• Crystal input frequency signal inverted and buffered

output on separate pin.

APPLICATIONS

• Cordless telephone

• Hand-held mobile radio.

UMA1015AM

GENERAL DESCRIPTION

The UMA1015AM is a low-power dual frequency
synthesizer for radio communications which operates in
the 50 to 1100 MHz frequency range. Each synthesizer
consists of a fully programmable main divider, a phase and
frequency detector and a charge pump. There is a fully
programmable reference divider common to both
synthesizers which operates up to 35 MHz.

The device is programmed via a 3-wire serial bus which
operates up to 10 MHz. The charge pump currents (gains)
are fixed by an external resistance at pin 20 (I
The BiCMOS device is designed to operate from 2.7 V
(3 NiCd cells) to 5.5 V at low current. Digital supplies V
and V

must be at the same potential. The charge pump

DD2

supply (VCC) can be provided by an external source or
on-chip voltage doubler. VCC must be equal to or higher
than V

DD1

.

Each synthesizer can be powered-down independently via
the serial bus to save current. It is also possible to
power-down the device via the HPD input (pin 5).

SET

).

DD1

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V

V

DD1
CC

CCvd

, V

DD2

digital supply voltage V

DD1=VDD2

charge pump supply voltage external supply; doubler

charge pump supply from

disabled; VCC≥ V
doubler enabled − 2V

DD

2.7 − 5.5 V

2.7 − 6.0 V

− 0.6 6.0 V

DD1

voltage doubler

I

DD1+IDD2+ICC

I

DDpd+ICCpd

I

DDpd

f

RF

operating supply current both synthesizers ON; doubler

total current in power-down
mode

current in power-down mode
from supply V

DD1

and V

DD2

disabled; V

DD1=VDD2

doubler disabled;
V

DD1=VDD2

=3V

doubler enabled;
V

DD1=VDD2

=3V

=3V

RF input frequency for each

− 8.7 − mA

− 3 −µA

− 0.25 − mA

50 − 1100 MHz

synthesizer

f

XTALIN

f

pc(min)

crystal input frequency 3 − 35 MHz
minimum phase comparator

− 10 − kHz

frequency

f

pc(max)

maximum phase

− 750 − kHz

comparator frequency

T

amb

operating ambient

−30 − +85 °C

temperature

1997 Sep 03 2

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015AM

for radio communications

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

UMA1015AM SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

BLOCK DIAGRAM

handbook, full pagewidth

11

CLK

DATA

12

13

E

4-BIT SHIFT

REGISTER

ADDRESS

DECODER

V

DD1

4

power

down

V

DD2

14

17-BIT SHIFT REGISTER

CONTROL LATCH

OOL

current

select

ratio

PACKAGE

DGND AGND

7

port
bits

I

SET

16

20

PUMP

BIAS

VDB enable

V

CC

18

VOLTAGE
DOUBLER

RF/64

RFA

HPD

f

XTALO

f

XTALIN

RFB

LATCH

19

1
2
9

17

MGG523

3

CPA

P0/OOL
P1
P2
P3

CPB

6

5

MAIN DIVIDER

TOOL A

RFA/64

SYNTHESIZER A

10

8

REFERENCE DIVIDER

UMA1015AM

LATCH

DIV

BY 2

SR

SYNTHESIZER B

LATCH

15

MAIN DIVIDER

TOOL B RFB/64

TOOL A

TOOL B

PHASE

DETECTOR

LOCK

DETECTOR

LOCK

DETECTOR

PHASE

DETECTOR

phase
error

LOCK

SELECT

phase
error

Fig.1 Block diagram.

1997 Sep 03 3

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

PINNING

SYMBOL PIN DESCRIPTION

P1 1 output Port 1
P2 2 output Port 2
CPA 3 charge pump output synthesizer A
V

DD1

HPD 5 hardware power-down

RFA 6 RF input synthesizer A
DGND 7 digital ground
f

XTALIN

P3 9 output Port 3
f

XTALO

CLK 11 programming bus clock input
DATA 12 programming bus data input
E 13 programming bus enable input

V

DD2

RFB 15 RF input synthesizer B
AGND 16 analog ground to charge pumps
CPB 17 charge pump output synthesizer B
V

CC

P0/OOL 19 Port output 0/out-of-lock output
I

SET

4 digital supply voltage 1

(input LOW = power-down)

8 common crystal frequency input from

TCXO

10 open-drain output of f

XTAL

signal

(active LOW)

14 digital supply voltage 2

18 analog supply to charge pump;

external or voltage doubler output

20 regulator pin to set charge pump

currents

handbook, halfpage

P1

1

P2

2

CPA

3

V

4

DD1
HPD

5

P3

UMA1015AM

6
7
8
9

10

RFA

DGND

f

XTALIN

f

XTALO

Fig.2 Pin configuration.

UMA1015AM

I

20

SET

19

P0/OOL
V

18

CC

17

CPB

16

AGND
RFB

15

V

14

DD2

E

13

DATA

12

CLK

11

MGG522

FUNCTIONAL DESCRIPTION
Main dividers

Each synthesizer has a fully programmable 17-bit main
divider. The RF input drives a pre-amplifier to provide the
clock to the first divider bit. The pre-amplifier has a high
input impedance, dominated by pin and pad capacitance.
The circuit operates with signal levels from below
50 mV (RMS) up to 250 mV (RMS), and at frequencies up
to 1.1 GHz. The high frequency sections of the divider are
implemented using bipolar transistors, while the slower
section uses CMOS technology. The range of division
ratios is 512 to 131071.

Reference divider

There is a common fully programmable 12-bit reference
divider for the two synthesizers. The input f

XTALIN

drives a

pre-amplifier to provide the clock input for the reference

1997 Sep 03 4

divider. This clock signal is also inverted and output on pin

(open drain). A crystal connected between f

f

XTALO

and f

with suitable feedback components can be

XTALO

XTALIN

used to make an oscillator. An extra divide-by-2 block
allows a reference comparison frequency for
synthesizer B to be half the frequency of synthesizer A.
This feature is selectable using the program bit SR. If the
programmed reference divider ratio is R then the ratio for
each synthesizer is as given in Table 1.

The range for the division ratio R is 8 to 4095. Opposite
edges of the divider output are used to drive the phase
detectors to ensure that active edges arrive at the phase
detectors of each synthesizer at different times. This
minimizes the potential for interference between the
charge pumps of each loop. The reference divider consists
of CMOS devices operating beyond 35 MHz.

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

Table 1 Synthesizer ratio of reference divider

SR SYNTHESIZER A SYNTHESIZER B

0R R
1R 2R

Phase comparators

For each synthesizer, the outputs of the main and
reference dividers drive a phase comparator where a
charge pump produces phase error current pulses for
integration in an external loop filter. The charge pump
current is set by an external resistance R
where a temperature-independent voltage of 1.1 V is
generated. R

should be between 12 and 60 kΩ.

SET

The charge pump current, ICP, can be programmed to be
either (12 × I

) or (24 × I

SET

) with a maximum of 2.3 mA.

SET

The dead zone, caused by finite switching of current
pulses, is cancelled by an internal delay in the phase
detector thus giving improved linearity. The charge pump
has a separate supply, VCC, which helps to reduce the
interference on the charge pump output from other parts of
the circuit. VCC can be higher than V

DD1

the VCO input is required. VCC must not be less than V

Voltage doubler

If required, there is a voltage doubler on-chip to supply the
charge pumps at a higher level than the nominal available
supply. The doubler operates from the digital supply V
and is internally limited to a maximum output of 6 V.
An external capacitor is required on pin VCC for smoothing,
the capacitor required to develop the extra voltage is
integrated on-chip. To minimize the noise being introduced
to the charge pump output from the voltage doubler, the
doubler clock is suppressed (provided both loops are
in-lock) for the short time that the charge pumps are active.
The doubler clock (RF/64) is derived from whichever main
divider is operating (synthesizer A has priority). While both
synthesizers are powered down (and the doubler is
enabled), the doubler clock is supplied by a low-current
internal oscillator. The doubler can be disabled by
programming the bit VDON to logic 0, in order to allow an
external charge pump supply to be used.

Out-of-lock indication/output ports

SET

at pin I

SET

,

if a wider range on

DD1

DD1

UMA1015AM

An out-of-lock condition is flagged when the phase error is
greater than T
The out-of-lock flag is only released after the first reference
cycle where the phase error is less than T
The out-of-lock function can be disabled, via the serial bus,
and the pin P0/OOL can be used as a port output. Three
other port outputs P1, P2 and P3 (open-drain transistors)
are also available.

Serial programming bus

A simple 3-line unidirectional serial bus is used to program
the circuit. The 3 lines are DATA, CLK and
The data sent to the device is loaded in bursts framed
by E. Programming clock edges are ignored until E goes
active LOW. The programmed information is loaded into
the addressed latch when E returns inactive (HIGH). This
is allowed when CLK is in either state without causing any
consequences to the register data. Only the last 21 bits
serially clocked into the device are retained within the
programming register. Additional leading bits are ignored,
and no check is made on the number of clock pulses.
The fully static CMOS design uses virtually no current
when the bus is inactive. It can always capture new

.

programming data even during power-down of both
synthesizers.

However when either synthesizer A or synthesizer B or
both are powered-on, the presence of a TCXO signal is
required at pin 8 (f

,

Data format

Data is entered with the most significant bit first.
The leading bits make up the data field, while the trailing
four bits are an address field. The address bits are
decoded on the rising edge of
load pulse to store the data in the addressed latch.
To ensure that data is correctly loaded on first power-up,
E should be held LOW and only taken HIGH after having
programmed an appropriate register. To avoid erroneous
divider ratios, the pulse is inhibited during the period when
data is read by the frequency dividers. This condition is
guaranteed by respecting a minimum E pulse width after
data transfer. The data format and register bit allocations
are shown in Table 2.

, which is approximately 30 ns.

OOL

) for correct programming.

XTALIN

E. This produces an internal

.

OOL

E (enable).

There is a common lock detector on-chip for the
synthesizers. The lock condition of each, or both loops, is
output via an open-drain transistor which drives
pin P0/OOL (when out-of-lock, the transistor is turned on
and therefore the output is forced LOW). The lock
condition output is software selectable (see Table 4).

1997 Sep 03 5

1997 Sep 03 6

Table 2 Bit allocation

FIRST REGISTER BIT ALLOCATION LAST

p1 p2 p3 p4 p5 p6 p7 p8 p9 p10 p11 p12 p13 p14 p15 p16 p17 p18 p19 p20 p21
dt16 dt15 dt14 dt13 dt12 DATA FIELD dt4 dt3 dt2 dt1 dt0 ADDRESS
X X VDON PO OLA OLB CRA CRB X X sPDA sPDB P3 P2 P1 X X 0 0 0 1
MA16 SYNTHESIZER A MAIN DIVIDER COEFFICIENT MA0 0 1 0 0
0 0 0 0 SR R11 REFERENCE DIVIDER COEFFICIENT R0 0 1 0 1
MB16 SYNTHESIZER B MAIN DIVIDER COEFFICIENT MB0 0 1 1 0

RESERVED FOR TEST

0 00 000000 00 0 00 sPBF 0 0 1 0 0 0

Note

1. The test register should not be programmed with any other values except all zeros for normal operation.

Table 3 Bit allocation description

SYMBOL DESCRIPTION

sPDA, sPDB software power-down for synthesizers A and B (0 = power-down)
sPBF software power-on for f
P3, P2, P1 and P0 bits output to pins 1, 2, 9 and 19 (1 = high impedance)
VDON voltage doubler enable (1 = doubler enabled)
OLA, OLB out-of-lock select; selects signal output to pin 19 (see Table 4)
CRA, CRB charge pump A/B current to I
SR reference frequency ratio select (see Table 6)

buffer (1 = buffer on)

xtal

ratio select (see Table 5)

SET

(1)

000 0

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

for radio communications

Table 4 Out-of-lock select

OLA OLB OUTPUT AT PIN 19

00P0
0 1 lock status of loop B; OOLB
1 0 lock status of loop A; OOLA
1 1 logic OR function of loops A and B

UMA1015AM

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

Table 5 Charge pump current ratio

CRA/CRB CURRENT AT PUMP

0I
1I

=12×I

CP

=24×I

CP

SET
SET

Table 6 Reference division ratio

SR SYNTHESIZER A SYNTHESIZER B

0R R
1R 2R

Power-down modes

The device can be powered down either via pin HPD
(active LOW = power-down) or via the serial bus
(bits sPDA and sPDB, logic 0 = power-down).

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

The synthesizers are powered up when both hardware
and software Power-down signals are at logic 1. When
only one synthesizer is powered down, the functions
common to both will be maintained (independent of the
state of sPBF). When both synthesizers are powered
down, the f
by setting sPBF to logic 1. This will allow any system clock
derived from the f
power-down. Note that sPBF is independent of the state of
HPD. When both synthesizers are switched off, the
voltage doubler (if enabled) will remain active drawing a
reduced current. An internal oscillator will drive the doubler
in this situation. If both synthesizers have been in a
power-down condition, then when one or both
synthesizers are reactivated, the reference and main
dividers restart in such a way as to avoid large random
phase errors at the phase comparator.

UMA1015AM

buffer can be maintained in an active state

xtal

buffered output to remain on in

XTALO

SYMBOL PARAMETER MIN. MAX. UNIT

V
V
∆V
V
V
∆V

DD1
CC

CC-DD
n
3, 17

GND

, V

DC range of digital power supply voltage with respect to DGND −0.3 +6.0 V

DD2

DC charge pump supply voltage with respect to AGND −0.3 +6.0 V
difference in voltage between VCC and V
DC voltage at pins 1, 2, 5, 6, 8 to 15, 19 and 20 with respect to DGND −0.3 V

DD1

, V

DD2

−0.3 +6.0 V

DD1

DC voltage at pins 3 and 17 with respect to AGND −0.3 VCC+ 0.3 V
difference in voltage between AGND and DGND (these pins should be

−0.3 +0.3 V

+ 0.3 V

connected together)

T

stg

T

amb

storage temperature −55 +125 °C
operating ambient temperature −30 +85 °C

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.

1997 Sep 03 7

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015AM

for radio communications

CHARACTERISTICS

V

DD1=VDD2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies; (V

V

, V

DD1

I

DD1+IDD2

I

DDpda

I

DDpdb

I

DD(xtal)

I

DDpd

V

CC

I

CC

I

CCpd

= 2.7 to 5.5 V; VCC= 2.7 to 6.0 V; T

, V

DD1

digital supply voltage V

DD2

and VCC) voltage doubler disabled, external supply on V

DD2

total digital supply current
from V

,

total digital supply current
from V

DD1

DD1

and V

and V

DD2

DD2

one synthesizer in
power-down mode

digital supply current from
V

with both

DD1

synthesizers powered
down and crystal buffer on

digital supply current in
power-down mode

charge pump supply
voltage

charge pump supply
current

charge pump supply
current in power-down
mode

with

=25°C; unless otherwise specified.

amb

DD1=VDD2

f

= 12.8 MHz;

XTAL

both synthesizers on;
V

DD1=VDD2

= 12.8 MHz;

f

XTAL

=3V

both synthesizers on;
V

DD1=VDD2

f

= 12.8 MHz; one

XTAL

= 5.5 V

synthesizer powered down;
V

DD1=VDD2

f

= 12.8 MHz; one

XTAL

=3V

synthesizer powered down;
V

DD1=VDD2

f

= 12.8 MHz; V

XTAL

sPBF = 1; V
f

= 12.8 MHz; V

XTAL

sPBF = 1; V

= 5.5 V

HPD

DD1=VDD2

HPD

DD1=VDD2

=0V;

=3V

=0V;

= 5.5 V

both synthesizers powered
down; V

VCC≥ V

= 0 V; sPBF = 0

HPD

DD

both synthesizers on and in
lock; f

= 12.5 kHz

ref

both synthesizers powered
down

CC

2.7 − 5.5 V

− 8.7 − mA

−− 12.5 mA

− 5.0 − mA

−− 7.5 mA

− 0.5 − mA

−− 1.15 mA

−− 60 µA

2.7 − 6.0 V

−− 25 µA

−− 25 µA

Voltage doubler enabled

I

DD

I

DDpd

V

CCvd

total digital supply current
from V

DD1

and V

DD2

total digital supply current
in power-down mode from
V

and V

DD1

DD2

charge pump supply
voltage

f

= 12.8 MHz; both

XTAL

synthesizers on and in lock;
V

=3V; fRF= 900 MHz

DD1

both synthesizers powered
down; V

DD1

=3V; V

sPBF = 0
DC current drawn from

VCC=50µA; fRF> 100 MHz

1997 Sep 03 8

HPD

=0V;

− 9.2 12 mA

− 0.25 0.4 mA

4.2 2V

− 0.6 6.0 V

DD1

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015AM

for radio communications

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

RF main divider input; RFA and RFB

f

RF

V

RF(rms)

Z

I

C

I

R

pm

Reference divider input; f

f

XTALIN

V

XTALIN(rms)

Z

I

C

I

R

rd

Charge pump current setting resistor input; I

V

SET

Charge pump outputs; CPA and CPB

I

cp

I

LI

RF input frequency 50 − 1100 MHz
RF input signal voltage

(RMS value; AC coupled)

input impedance
(real part)

Rs=50Ω;

50 − 250 mV

fRF= 400 to 1100 MHz
R

=50Ω; fRF= 80 to 400 MHz 150 − 400 mV

s

R

=50Ω; fRF= 50 to 80 MHz 225 − 400 mV

s

fRF= 1 GHz; indicative, not

− 300 −Ω

tested
input capacitance indicative, not tested − 1 − pF
principle main divider ratio 512 − 131071

XTALIN

reference input frequency

3 − 35 MHz

from crystal
sinusoidal input voltage

100 − 500 mV

(RMS value)
input impedance

(real part)

f

= 12.8 MHz; indicative,

XTALIN

not tested

− 10 − kΩ

input capacitance indicative, not tested − 1 − pF
reference divider ratio 8 − 4095

SET

voltage output on I

charge pump sink or
source current

SET

R

=12to60kΩ−1.1 − V

SET

R

SET

=15kΩ;

1.3 1.75 2.3 mA
CRA/CRB = logic 1;
Icp=I

SET

× 24;

Vcp=0.4VtoVCC− 0.5 V
R

SET

=15kΩ;

0.7 0.9 1.2 mA
CRA/CRB = logic 0;
Icp=I

SET

× 12;

Vcp=0.4VtoVCC− 0.5 V

charge pump off leakage

Vcp=0.4VtoVCC− 0.5 V −5 ±1+5nA

current

Logic input signal levels; DATA, CLK,

V
V
I
C

IH
IL

bias

I

HIGH level input voltage at logic 1 0.7V
LOW level input voltage at logic 0 −0.3 − 0.3V
input bias currents at logic 1 or logic 0 −5 − +5 µA
input capacitance indicative, not tested − 1 − pF

Port outputs/Out-of-lock; P0/OOL, P1, P2, P3 and f

V

OL

LOW level output voltage I

E and HPD

XTALO

< 0.4 mA −− 0.4 V

sink

1997 Sep 03 9

DD1

- open drain outputs

− V

DD1

DD1

+ 0.3 V

V

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015AM

for radio communications

SERIAL TIMING CHARACTERISTICS

V

=3V; T

DD1

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

Serial programming clock; CLK

, t

t

r

f

T

cy

Enable programming;

t

START

t

END

t

W

t

SU;E

Register serial input data; DATA

t

SU;DAT

t

HD;DAT

=25°C; unless otherwise specified.

amb

input rise and fall times − 10 40 ns
clock period 100 −−ns

E

delay to rising clock edge 40 −−ns
delay from last falling clock edge −20 −−ns
minimum inactive pulse width 4000 −−ns
enable set-up time to next clock edge 20 −−ns

input data to clock set-up time 20 −−ns
input data to clock hold time 20 −−ns

handbook, full pagewidth

CLK

DATA

E

t

SU;DAT

t

START

MSB

t

HD;DAT

T

cy

Fig.3 Serial bus timing diagram.

t

END

t

t

f

LSB

r

ADDRESS

MGG524

t

SU;E

t

W

1997 Sep 03 10

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

TYPICAL PERFORMANCE CHARACTERISTICS

12

handbook, full pagewidth

I

DD

(mA)

10

8

6

4

2

2.5 3.5 43 54.5

(1)

(2)

(3)

UMA1015AM

MGK784

VDD (V)

5.5

(1) T

= +90°C. (2) T

amb

Fig.4 Typical IDD as a function of VDD with both synthesizers on and voltage doubler disabled.

2.0

handbook, full pagewidth

1.6

I

CPA

(mA)

1.2

0.8

0.4

0

−0.4

−0.8

−1.2

−1.6

−2.0

0 524613

R

=15kΩ;

SET

CRA =1.

= +25°C. (3) T

amb

(1)

(1)

(1) VCC= 2.7V. (2) VCC= 6.0V.

amb

= −35°C.

MGK783

(2)

(2)

V

(V)

CPA

Fig.5 Typical charge pump current as a function of CPA voltage with T

1997 Sep 03 11

amb

=25°C.

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

handbook, full pagewidth

4

I

CPA
(nA)

2

0

−2

−4

0 524613

(1)
(2)
(3)

UMA1015AM

MGK782

V

(V)

CPA

VCC=VDD=6V;

=15kΩ; CRA = 1. (1) T

R

SET

10

handbook, full pagewidth

V

XTALIN

(dBm)

0

−10

−20

−30

−40

+7

−7

= +25 °C. (2) T

amb

= −35 °C. (3) T

amb

amb

= +90 °C.

Fig.6 Typical charge pump 3-state current as a function of CPA voltage.

guaranteed area

(1)

(2)

MGK779

−50
05 35302520

f

externally terminated by 50 Ω load; AC-coupled. (1) VDD= 5.5 V. (2) VDD= 2.7 V.

XTALIN

1510

Fig.7 Typical crystal input sensitivity as a function of input frequency with T

1997 Sep 03 12

amb

f

XTALIN

=25°C.

(MHz)

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

10

handbook, full pagewidth

V

XTALIN
(dBm)

0

−10

−20

−30

−40

f

externally terminated by 50 Ω load; AC-coupled. (1) T

XTALIN

+7

−7

(1)

(2)
(3)

05 35302520

1510

amb

guaranteed area

= −35 °C. (2) T

= +25 °C. (3) T

amb

UMA1015AM

f

(MHz)

XTALIN

= +90 °C.

amb

MGK780

Fig.8 Typical crystal input sensitivity as a function of input frequency with VDD= 5.5 V.

10

handbook, full pagewidth

V

RF

+5

(dBm)

0

−3.5

guaranteed area

−10

−13

−20

−30

RF input externally terminated by 50 Ω load; AC-coupled. (1) VDD= 5.5 V. (2) VDD= 2.7 V.

100 200 300 400 500 1000 1100 1200

0 600 800

(1)

(2)

700

MGK781

+1

900

fRF (MHz)

Fig.9 Typical RF input sensitivity as a function of input frequency with T

1997 Sep 03 13

amb

=25°C.

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

10

handbook, full pagewidth

V

RF

(dBm)

+5

0

−3.5

−10

−13

−20

−30

100 200 300 400 500 1000 1100 1200

0 600 800

guaranteed area

(1)

(2)

(3)

700

UMA1015AM

MGK778

+1

900

fRF (MHz)

RF input externally terminated by 50 Ω load; AC-coupled. (1) T

Fig.10 Typical RF input sensitivity as a function of input frequency with VDD= 5.5 V.

handbook, full pagewidth

6

V

CC

(V)

5.5

5

4.5

4

2.5 3 5

(1) T

= −35 °C. (2) T

amb

amb

= +25 °C.

(1)

(2)

(3)

(3) T

amb

= +90 °C.

= −35 °C. (2) T

amb

4

= +25 °C. (3) T

amb

4.53.5

amb

= +90 °C.

VDD (V)

MGK777

5.5

Fig.11 Typical charge pump supply voltage as a function of VDD voltage with voltage doubler enabled.

1997 Sep 03 14

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

handbook, full pagewidth

0.5

(1)

(2)

0.2

j

+

0

− j

0.2

(3)

0.2 0.5 1 2 5 10

0.5

UMA1015AM

1

2

5

10

∞

10

5

2

(1) Real part: 500 Ω; imaginary part: 1.4 pF; at 1.2 GHz.
(2) Real part: 800 Ω; imaginary part: 1.1 pF; at 1.0 GHz. (3) Real part: 830 Ω; imaginary part: 0.9 pF; at 800 MHz.

1

MGK785

Fig.12 Typical RF input admittance (IC powered on).

handbook, full pagewidth

0.5

0.2

j

+

(2)

0

− j

0.2

0.2 0.5 1 2 5 10

(1)

1

2

5

5

10

∞

10

0.5

1

(1) Real part: 7.8 kΩ; imaginary part: 0.9 pF; at 3 MHz. (2) Real part: 9.8 kΩ; imaginary part: 1.0 pF; at 35 MHz.

2

MGK786

Fig.13 Typical crystal input admittance (IC powered on).

1997 Sep 03 15

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

APPLICATION INFORMATION

handbook, full pagewidth

SPLITTER

POWER

AMPLIFIER

959 MHz

VOLTAGE

CONTROLLED

OSCILLATOR

TRANSMIT PLL

MAIN

DIVIDER A

UMA1015AM

modulated audio

LOW-PASS

FILTER

PHASE

COMPARATOR

A

DUPLEX

FILTER

914 MHz

LOW NOISE

AMPLIFIER

TCXO

SPLITTER

856 MHz

1st MIXER

REFERENCE

DIVIDER

MAIN

DIVIDER B

RECEIVE PLL

VOLTAGE

CONTROLLED

OSCILLATOR

1st IF AND REMAINDER OF

RECEIVER CHAIN

UMA1015AM

PHASE

COMPARATOR

B

LOW-PASS

FILTER

to demodulation

MGG533

Fig.14 Typical application block diagram.

1997 Sep 03 16

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

nF

100

MGG534

nF

control

56 kΩ

56 Ω

VCORx

1 nF

18 Ω

18 Ω

1 nF

RF output

856 MHz

1 nF

18 Ω

100

18 Ω

nF

supply

positive

3-line

bus

15 Ω

positive supplypositive supply

120 Ω

LED

3.9 kΩ

100

nF

1 nF

56

39

kΩ

nF

3.3

to 1st

mixer

UMA1015AM

width

27

27

18

10

1 kΩ

1 kΩ

15

6

DD2

V

14

7

DGND

56 Ω

1 nF

959 MHz

1 kΩ

E

13

8

XTALIN

f

18 Ω

DATA

12

9

P3

1 nF

CLK

11

10

XTALO

f

amplifier

to power

supply

positive

positive

supply

Fig.15 Typical CT1 application.

27

kΩ

27

kΩ

OSC

GND

f

VTCXO

V

33 Ω

100 nF

100 nF

ctr

10 kΩ

15

kΩ

SET

I

P0/OOL

VCCCPB

20

19

18

3

2

1

P1

100

nF

P2

DD1

CPA

V

nF

3.3

39

kΩ

56

nF

1

nF

kΩ

kΩ

Ω

kΩ

17

4

56 kΩ

RFB

AGND

16

UMA1015AM

5

RFA

HPD

1 nF1 nF

18 Ω 18 Ω

15 Ω

nF

100

control

VCOTx

RF output

audio

modulation

1997 Sep 03 17

Transmit frequency = 959 MHz.

Receive frequency = 914 MHz.

1st IF = 58.1125 MHz.

2nd IF = 455 MHz.

VCO sensitivity = 2 MHz/V.

Channel spacing = 12.5 kHz.

Charge pump gain (CPA = CPB) = 1 mA/cycle.

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

UMA1015AM

SOT266-1

A

X

v M

E

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

1.5

A2A

1

0.1501.4

1.2

0.25

b

3

p

0.32

0.20

UNIT A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

cD

0.20

6.6

0.13

6.4

0 2.5 5 mm

scale

(1)E(1)

eHELLpQZywv θ

4.5

0.65 1.0 0.2

4.3

6.6

6.2

Q

A

2

A

1

detail X

0.75

0.65

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE
VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1997 Sep 03 18

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Product specification

Low-power dual frequency synthesizer
for radio communications

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

UMA1015AM

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Sep 03 19

Philips Semiconductors Product specification

Low-power dual frequency synthesizer

UMA1015AM

for radio communications

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Sep 03 20

Philips Semiconductors Product specification

Low-power dual frequency synthesizer for
radio communications

NOTES

UMA1015AM

1997 Sep 03 21

Philips Semiconductors Product specification

Low-power dual frequency synthesizer for
radio communications

NOTES

UMA1015AM

1997 Sep 03 22

Philips Semiconductors Product specification

Low-power dual frequency synthesizer for
radio communications

NOTES

UMA1015AM

1997 Sep 03 23

Philips Semiconductors – a worldwide company

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Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
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Fax. [phone]
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220050 MINSK, Tel. [phone], Fax. [phone]

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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
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Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
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20124 MILANO, Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

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Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

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Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
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Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
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Spain: Balmes 22, 08007 BARCELONA,
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Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
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Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 437027/1200/03/pp24 Date of release: 1997 Sep 03 Document order number: 9397 750 02704