Datasheet UBA2021T, UBA2021P Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

UBA2021

630 V driver IC for CFL and TL
lamps

Product specification
Supersedes data of 2000 Jul 24
File under Integrated Circuits, IC11

2001 Jan 30

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

FEATURES

• Adjustable preheat and ignition time

• Adjustable preheat current

• Adjustable lamp power

• Lamp temperature stress protection at higher mains

GENERAL DESCRIPTION

The UBA2021 is a high-voltage IC intended to drive and
control Compact Fluorescent Lamps (CFL) or fluorescent
TL-lamps. It contains a driver circuit for an external
half-bridge, an oscillator and a control circuit for starting
up, preheating, ignition, lamp burning and protection.

voltages

• Capacitive mode protection

• Protection against a too-lowdrive voltage for the power

MOSFETs.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High voltage supply

V

FS

high side supply voltage IFS<15µA; t < 0.5 s −−630 V

Start-up state

V

VS(start)

V

VS(stop)

I

VS(standby)

oscillator start voltage − 11.95 − V
oscillator stop voltage − 10.15 − V
standby current VVS=11V − 200 −µA

Preheat mode

f

start

t

ph

V

RS(ctrl)

start frequency − 108 − kHz
preheat time CCP= 100 nF − 666 − ms
control voltage at pin RS −−600 − mV

Frequency sweep to ignition

f

B

t

ign

bottom frequency − 42.9 − kHz
ignition time − 625 − ms

Normal operation

f

B

t

no

I

tot

, R

R

G1(on)

R

, R

G1(off)

bottom frequency − 42.9 − kHz
non-overlap time − 1.4 −µs
total supply current fB= 43 kHz − 1 − mA
high and low side on resistance − 126 −Ω

G2(on)

high and low side off resistance − 75 −Ω

G2(off)

Feed-forward

f

ff

I

i(RHV)

feed-forward frequency I

= 0.75 mA − 63.6 − kHz

RHV

I

= 1.0 mA − 84.5 − kHz

RHV

operating range of input current at pin RHV 0 − 1000 µA

2001 Jan 30 2

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

UBA2021T SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
UBA2021P DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1

BLOCK DIAGRAM

CI

CF

handbook, full pagewidth

n.c.

4

VS

RHV

5

SUPPLY

BAND GAP

REFERENCE

13

RREF

12

10

OSCILLATOR

14

SB

LEVEL

SHIFTER

bootstrap
charging circuit

HIGH SIDE

DRIVER

1

FS

2

G1

3

S1

CP

RS

8

9

RS

MONITOR

TIMING

CONTROL

NON

OVERLAP

UBA2021

LOW SIDE

DRIVER

11

SGND

MGS988

6

G2

7

PGND

Fig.1 Block diagram.

2001 Jan 30 3

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

PINNING

SYMBOL PIN DESCRIPTION

FS
G1
S1
n.c.
VS
G2
PGND
CP
RS
RREF
SGND
CF
RHV
CI

1
2
3
4
5
6
7
8

9
10
11
12
13
14

high side floating supply voltage
gate high transistor (T1)
source high transistor (T1)
high-voltage spacer, not to be connected
low voltage supply
gate low transistor (T2)
power ground
timing/averaging capacitor
current monitoring input
reference resistor
signal ground
oscillator capacitor
start-up resistor/feed-forward resistor
integrating capacitor

handbook, halfpage

FS
G1
S1

n.c.

VS
G2

PGND

1
2
3
4

UBA2021T

5
6
7

MGS989

14

CI

13

RHV

12

CF

11

SGND

10

RREF

9

RS

8

CP

Fig.2 Pin configuration (SO14).

2001 Jan 30 4

handbook, halfpage

FS

G1

S1

n.c.

VS
G2

PGND

1
2
3
4

UBA2021P

5
6
7

MGS990

14

CI

13

RHV

12

CF

11

SGND

10

RREF

9

RS

8

CP

Fig.3 Pin configuration (DIP14).

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

FUNCTIONAL DESCRIPTION
Introduction

The UBA2021 is an integrated circuit for electronically
ballasted compact fluorescent lamps and their derivatives
operating with mains voltages up to 240 V (RMS). It
provides all the necessary functions for preheat, ignition
and on-state operation of the lamp. In addition to the
control function, the IC provides level shift and drive
functions for the two discrete power MOSFETs, T1 and T2
(see Fig.7).

Initial start-up

Initial start-up is achieved by charging capacitor CS9 with
the current applied to pin RHV. At start-up, MOSFET T2
conducts and T1 is non-conducting, ensuring C

boot

becomes charged. This start-up state is reached for a
supply voltage V

VS(reset)

(this is the voltage level at pin VS
at which the circuit will be reset to the initial state) and
maintained until the low voltage supply (VVS) reaches a
value of V

. The circuit is reset in the start-up state.

VS(start)

Oscillation

When the low voltage supply (VVS) has reached the value
of V

VS(start)

the circuit starts oscillating in the preheat state.
The internal oscillator is a current-controlled circuit which
generates a sawtooth waveform. The frequency of the
sawtooth is determined by the capacitor CCF and the
current out of pin CF (mainly set by R

). The sawtooth

RREF

frequency is twice the frequency of the signal across the
load. The IC brings MOSFETs T1 and T2 alternately into
conduction with a duty factor of approximately 50%.
Figure 4 represents the timing of the IC. The circuit block
'non-overlap' generates a non-overlap time tno that
ensures conduction periods of exclusively T1 or T2. Time
tno is dependent on the reference current I

RREF

.

handbook, halfpage

V

CF

0

internal

clock

0

V

(G1-S1)

0

V

(G2)

0

start-up

t

no

MGS991

t

no

time

Fig.4 Oscillator timing.

Operation in the preheat mode

The circuit starts oscillating at approximately 2.5 × f

B

(108 kHz). The frequency gradually decreases until a
defined value of current I

is reached (see Fig.5). The

shunt

slope of the decrease in frequency is determined by
capacitor CCI. The frequency during preheating is
approximately 90 kHz. This frequency is well above the
resonantfrequencyofthe load, which means that the lamp
is off; the load consists of L2, C5 and the electrode
resistance only. The preheat time is determined by
capacitor CCP. The circuit can be locked in the preheat
state by connecting pin CP to ground. During preheating,
the circuit monitors the load current by measuring the
voltage drop over external resistor R
conduction of T2 with decision level V
frequency is decreased as long as VRS>V
frequency is increased for VRS<V

shunt

RS(ctrl)

RS(ctrl)

at the end of

. The

. The

RS(ctrl)

.

2001 Jan 30 5

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

Feed-forward frequency

Above a defined voltage level the oscillation frequency

handbook, halfpage

f

start

f

B

preheat state

For calculations refer to Chapter “Design equations”.

ignition

state

Fig.5 Operation in the preheat mode.

MGS992

burn state

time

also depends on the supply voltage of the half-bridge
(see Fig.6).Thecurrentforthecurrent-controlled oscillator
is in the feed-forward range derived from the current
through R
tothe average value of the current through R
operating range of I

. The feed-forward frequency is proportional

RHV

withinthe

RHV

, given the lower limit set by fB.

i(RHV)

For currents beyond the operating range (i.e. between

1.0 and 1.6 mA)thefeed-forwardfrequencyisclamped.In
order to prevent feed-forward of ripple on Vin, the ripple is
filtered out. The capacitor connected to pin CP is used for
this purpose. This pin is also used in the preheat state and
the ignition state for timing (tphand t

ign

).

Ignition state

The RS monitoring function changes from V

RS(ctrl)

regulation to capacitive mode protection at the end of the
preheat time. Normally this results in a further frequency
decrease down to the bottom frequency fB(approximately
43 kHz). The rate of change of frequency in the ignition
state is less than that in the preheat mode. During the
downward frequency sweep, the circuit sweeps through
the resonant frequency of the load. A high voltage then
appears across the lamp. This voltage normally ignites the
lamp.

Failure to ignite

Excessive current levels may occur if the lamp fails to
ignite. The IC does not limit these currents in any manner.

Transition to the burn state

Assuming that the lamp has ignited during the downward
frequencysweep,thefrequencynormallydecreasestothe
bottom frequency. The IC can transit to the burn state in
two ways:

1. In the event that the bottom frequency is not reached,

transition is made after reaching the ignition time t

ign

2. As soon as the bottom frequency is reached.
The bottom frequency is determined by R

RREF

and CCF.

handbook, halfpage

f

(kHz)

feed-forward

range

bottom

frequency

I

(mA)

RHV

For calculations refer to Chapter “Design equations”.

Fig.6 Feed-forward frequency.

Capacitive mode protection

When the preheat mode is completed, the IC will protect
the power circuit against losing the zero voltage switching
condition and getting too close to the capacitive mode of
operation. This is detected by monitoring voltage VRS at
pin RS. If the voltage is below V

RS(cap)

at the time of
turn-onof T2, then capacitive mode operation is assumed.
Consequently the frequency increases as long as the

.

capacitive mode is detected. The frequency decreases
down to the feed-forward frequency if no capacitive mode
is detected. Frequency modulation is achieved via pin CI.

MGS993

2001 Jan 30 6

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

IC supply

Initially, the IC is supplied from Vin by the current through
R

. This current charges the supply capacitor CS9 via

RHV

an internal diode. As soon as VVS exceeds V

VS(start)

, the
circuitstartsoscillating.Afterthepreheat phase is finished,
pin RHV is connected to an internal resistor R

i(RHV)

; prior
to this, pin RHV is internally connected to pin VS. The
voltage level at pin RHV thus drops from VVS+V
I

RHV

× R

. The capacitor CS9 at pin VS will now be

i(RHV)

diode

to

charged via the snubber capacitor CS7. Excess charge is
drained by an internal clamp that turns on at voltage
V

VS(clamp)

.

Minimum gate-source voltage of T1 and T2

The high side driver is supplied via capacitor C
Capacitor C

is charged via the bootstrap switch during

boot

boot

.

the on-periods of T2. The IC stops oscillating at a voltage
level V

. Given a maximum charge consumption on

VS(stop)

the load at pin G1 of 1 nC/V, this safeguards the minimum
drive voltages V

for the high side driver; see

(G1−S1)

Table 1.

Table 1 Minimum gate-source voltages

FREQUENCY VOLTAGE

<75 kHz 8 V (min.)

75 kHz to 85 kHz 7 V (min.)

≥85 kHz 6 V (min.)

Ground pins

Pin PGND is the ground reference of the IC with respect to
the application. As an exception, pin SGND provides a
local ground reference for the components connected to
pins CP, CI, RREF and CF. For this purpose pins PGND
and SGND are short-circuited internally. External
connection of pins PGND and SGND is not preferred. The
sum of currents flowing out of the pins CP, CI, RREF, CF
and SGND must remain zero at any time.

Charge coupling

Due to parasitic capacitive coupling to the high voltage
circuitry, all pins are burdened with a repetitive charge
injection. Given the typical application in Fig.7, pins RREF
and CF are sensitive to this charge injection. For the rating
Q

a safe functional operation of the IC is guaranteed,

couple

independent of the current level. Charge coupling at
current levels below 50 µA will not interfere with the
accuracy of the V

RS(cap)

and V

levels. Charge

RS(ctrl)

coupling at current levels below 20 µA will not interfere
with the accuracy of any parameter.

The drive voltage at G2 will exceed the drive voltage of the
high side driver.

Frequency and change in frequency

At any point in time during oscillation, the circuit will
operate between f

B

and f

. Any change in frequency will

start

be gradual, no steps in frequency will occur. Changes in
frequency caused by a change in voltage at pin CI show a
rather-constantdf/dt over the entire frequency range. The
following rates are realised (at a frequency of 85 kHz and
with a 100 nF capacitor connected to pin CI):

• For any increase in frequency:df/dtis between

15 and 37.5 kHz/ms

• During preheat and normal operation:df/dtfor a

decrease in frequency is between −6 and −15 kHz/ms

• During the ignition phase:df/dtfor a decrease in

frequency is between −150 and −375 Hz/ms.

2001 Jan 30 7

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); all voltages referenced to ground.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

FS

I

VS(clamp)

V

RS

SR slew rate at pins S1, G1 and FS

P power dissipation − 500 mW
T

amb

T

j

T

stg

Q

couple

V

es

high side floating supply voltage operating − 570 V

t ≤ 0.5 s − 630 V
clamp current t ≤ 0.5 s − 35 mA
input voltage pin RS −2.5 +2.5 V

transient of 50 ns −15.0 +2.5 V

−4 +4 V/ns

(with respect to ground)

ambient temperature −40 +150 °C
junction temperature −40 +150 °C
storage temperature −55 +150 °C
charge coupling at pins RREF and CF operating −8+8pC
electrostatic handling voltage human body model; note 1 − 3000 V

machine model; note 2 − 300 V

Notes

1. Human body model: all pins are 3000 V maximum, except pins FS, G1, S1 and VS which are 1500 V maximum and
pin G2 which is 1000 V maximum.

2. Machine model: all pins are 300 V maximum, except pin G2 which is 125 V maximum.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air

SO14 100 K/W
DIP14 60 K/W

R

th(j-pin)

thermal resistance from junction to pcb in free air

SO14 50 K/W
DIP14 30 K/W

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611-E”.

2001 Jan 30 8

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

CHARACTERISTICS

VVS=11V; VFS− VS1=11V; T

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

High voltage supply

I

L

leakage current on high voltage pins VFS,VG1 and VS1= 630 V −−15 µA

Start-up state

V

VS(reset)

V

VS(start)

V

VS(stop)

V

VS(hys)

I

VS(standby)

∆V

(RHV−VS)

reset voltage T1 off; T2 on 4.0 5.5 6.5 V
oscillator start voltage 11.35 11.95 12.55 V
oscillator stop voltage 9.55 10.15 10.75 V
supply voltage hysteresis 1.5 1.8 2.0 V
standby supply current at pin VS VVS= 11 V; note 1 150 200 250 µA
voltagedifference between pins RHV

and VS

V

VS(clamp-start)

I

VS(clamp)

clamp margin V
clamp current VVS<17V − 14 35 mA

Preheat mode

f

start

t

g

I

CI(charge)

I

CI(discharge)

t

ph

I

CP(charge)

I

CP(discharge)

∆V

CP(pk)

V

RS(ctrl)

starting frequency VCI= 0 V 98 108 118 kHz
conducting time T1 and T2 f
charge current at pin CI VCI= 1.5 V; VRS= −0.3V384450µA
discharge current at pin CI VCI= 1.5 V; VRS= −0.9 V 79 93 107 µA
preheat time 599 666 733 ms
charge current at pin CP VCP=1V − 6.0 −µA
discharge current at pin CP VCP=1V − 5.95 −µA
peak voltage difference at pin CP when timing − 2.5 − V
control voltage at pin RS note 3 −636 −600 −564 mV

Frequency sweep to ignition

I

CI(charge)

f

B

t

ign

charge current at pin CI VCI= 1.5 V; f ≈ 85 kHz 0.8 1.0 1.2 µA
bottom frequency VCI at clamp level − 42.9 − kHz
ignition time − 625 − ms

Normal operation

f

B

t

g

t

no

I

tot

V

RS(cap)

V

RREF

V

G1(on)

V

G1(off)

V

G2(on)

V

G2(off)

R

G1(on)

bottom frequency 42.21 42.90 44.59 kHz
conducting time T1 and T2 fB= 43 kHz − 10.2 −µs
non-overlap conductance time 1.05 1.4 1.75 µs
total supply current fB= 43 kHz; note 4 0.85 1.0 1.1 mA
capacitive mode control voltage note 5 0 20 40 mV
reference voltage note 6 2.425 2.5 2.575 V
on voltage at pin G1 IG1 = 1 mA 10.5 −−V
off voltage at pin G1 IG1 = 1 mA −−0.3 V
on voltage at pin G2 IG2 = 1 mA 10.5 −−V
off voltage at pin G2 IG2 = 1 mA −−0.3 V
high side driver on resistance V

=25°C; all voltages referenced to ground; see Fig.7; unless otherwise specified.

amb

I

= 1.0 mA 0.7 0.8 1.0 V

RHV

VS(clamp)

to V

VS(start)

note 2 0.2 0.3 0.4 V

= 108 kHz − 3.2 −µs

start

(G1 − S1)

= 3 V; note 7 100 126 152 Ω

2001 Jan 30 9

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

G1(off)

R

G2(on)

R

G2(off)

V

drop

Feed-forward

R

i(RHV)

I

i(RHV)

f

ff

SYM

ff

RR ripple rejection f
R

CP(sw)

R

AV

Notes

1. The start-up supply current is specified in a temperature (Tvj) range of 0 to 125 °C. For Tvj<0 and Tvj>125 °C the
start-up supply current is <350 µA.

2. The clamp margin is defined as the voltage difference between turn-on of the clamp and start of oscillation. The
clamp is in the off-state at start of oscillation.

3. Data sampling of V

4. The total supply current is specified in a temperature (Tvj) range of −20 to +125 °C. For Tvj< −20 and Tvj>125 °C the
total supply current is <1.5 mA.

5. Data sampling of V

6. Within the allowed range of R

7. Typical values for the on and off resistances at Tvj= 87.5 °C are: R
R

G1(off)

8. The input current at pin RHV may increase to 1600 µA during voltage transient at Vin. Only for currents I
approximately 550 µA is the oscillator frequency proportional to I

9. Thesymmetry SYMffiscalculated from the quotient SYMff=T1
turn-off of G1, and T2

high side driver off resistance V

(G1 − S1)

= 3 V; note 7 60 75 90 Ω
low side driver on resistance VG2= 3 V; note 7 100 126 152 Ω
low side driver off resistance VG2= 3 V; note 7 60 75 90 Ω
voltage drop at bootstrap switch IFS= 5 mA 0.6 1.0 1.4 V

input resistance at pin RHV 1.54 2.2 2.86 kΩ
operating range of input current at

note 8 0 − 1000 µA

pin RHV
feed-forward frequency I

symmetry I

= 0.75 mA 60.4 63.6 66.15 kHz

RHV

= 1 mA 80.3 84.5 88.2 kHz

I

RHV

= 1 mA; note 9 0.9 1.0 1.1

RHV

= 100 Hz − 6 − dB

Vin

CP switch series resistance ICP= 100 µA 0.75 1.5 2.25 kΩ
averaging resistor ICP=10µA 22.4 32 41.6 kΩ

is performed at the end of conduction of T2.

RS(ctrl)

is performed at the start of conduction of T2.

RS(cap)

, defined as 30 kΩ +10%.

RREF

G2(on)

and R

G1(on)

= 164 Ω, R

G2(off)

= 100 Ω.

.

RHV

/T2

tot

tot

the time between turn-off of G1 and turn-off of G2.

tot

,with T1

thetime between turn-off of G2 and

tot

and

RHV

beyond

2001 Jan 30 10

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

DESIGN EQUATIONS

=

• Bottom frequency:

• Feed-forward frequency:

f

---------------------------------------------------------------------------------------------------------------------------

B

2CCFC

f

=

ff

+()X1 R

par

----------------------------------------------------------------------------------------------------------------------------



2C

×




+()

CFCpar

Where:
– X1 = 3.68
– X2 = 22.28
– τ = 0.4 µs

=3kΩ

–R

int

–C

= 4.7 pF

par

• Operating frequency is the maximum of fB, fff or f
Where:
–fB= bottom frequency
–fff= feed-forward frequency
–fcm= frequency due to capacitive mode detection

• Preheat time:

• Ignition time:

t

t

ign

ph

C

-----------------­150 nF

15

-----­16

CP

×=

R

RREF

×=

----------------­30 kΩ

t

ph

1

× R

RREF

–()×[]τ+{}×

int

1

×

X2 V



×τ+



cm

RREF

------------------------------­I

iRHV()

R

–

int

• Non-overlap time:

R

×=

-----------------

RREF

30kΩ

1.4 µs

t

no

2001 Jan 30 11

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

APPLICATION INFORMATION

handbook, full pagewidth

mains

supply

CS7

R

RHV

490 kΩ

100 nF

DS7

DS6

G1

2

S1

3

FS

boot

G2

VS

CS9

1

6

5

C

RHV

13

14

8

UBA2021

79

PGND RS

12

10

11

MGS994

CI

CP

CF

RREF

SGND

C

CI

100 nF

C

CP

100 nF

C

CF

100 pF

R

RREF

30 kΩ

R

shunt

V

in

T1

L2

T2

CS4

L1

DS2DS1

R1

DS4DS3

C3

C2

C4

lamp

C5

Fig.7 Application diagram.

2001 Jan 30 12

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

PACKAGE OUTLINES

SO14: plastic small outline package; 14 leads; body width 3.9 mm

SOT108-1

y

Z

14

pin 1 index

1

D

c

8

A

2

A

1

7

e

w M

b

p

E

H

E

detail X

A

X

v M

A

Q

(A )

L

p

L

A

3

θ

0 2.5 5 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT108-1

A

max.

1.75

0.069

A

0.25

0.10

0.010

0.004

A2A

1

1.45

1.25

0.057

0.049

IEC JEDEC EIAJ

076E06 MS-012

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1)

cD

8.75

8.55

0.35

0.34

REFERENCES

4.0

3.8

0.16

0.15

1.27

0.050

2001 Jan 30 13

eHELLpQZywv θ

1.05

0.041

1.0

0.4

0.039

0.016

0.7

0.25

0.6

0.028

0.01 0.004

0.024

EUROPEAN

PROJECTION

0.25 0.1

0.01

6.2

5.8

0.244

0.228

(1)

0.7

0.3

0.028

0.012

ISSUE DATE

97-05-22
99-12-27

o

8

o

0

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

DIP14: plastic dual in-line package; 14 leads (300 mil)

D

seating plane

L

Z

14

pin 1 index

e

b

SOT27-1

M

E

A

2

A

A

1

w M

b

1

8

E

c

(e )

1

M

H

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

OUTLINE

VERSION

SOT27-1

A

min.

A

1 2

max.

IEC JEDEC EIAJ

050G04 MO-001 SC-501-14

b

1.73

1.13

0.068

0.044

b

0.53

0.38

0.021

0.015

1

cD

0.36

0.23

0.014

0.009

REFERENCES

(1) (1)

19.50

18.55

0.77

0.73

2001 Jan 30 14

7

M

Ee M

6.48

6.20

0.26

0.24

e

L

1

3.60

3.05

0.14

0.12

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

10.0

8.3

0.39

0.33

H

0.2542.54 7.62

ISSUE DATE

w

0.010.10 0.30

95-03-11
99-12-27

Z

max.

2.24.2 0.51 3.2

0.0870.17 0.020 0.13

(1)

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

SOLDERING
Introduction

Thistextgivesaverybriefinsighttoacomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponents are mixed on
one printed-circuit board. However, wave soldering is not
always suitable for surface mount ICs, or for printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboardbyscreenprinting,stencillingor
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

stg(max)

). If the

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurfacemountdevices(SMDs)orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleadsonfoursides,the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

2001 Jan 30 15

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable

WAVE REFLOW

(2)

− suitable

(1)

DIPPING

Surface mount BGA, LFBGA, SQFP, TFBGA not suitable suitable −

SOLDERING METHOD

HBCC, HLQFP, HSQFP, HSOP, HTQFP,

not suitable

(3)

suitable −

HTSSOP, SMS

(4)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

, SO, SOJ suitable suitable −

(4)(5)

suitable −

(6)

suitable −

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

2001 Jan 30 16

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applications will be
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingthese products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveys no licence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2001 Jan 30 17

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

NOTES

2001 Jan 30 18

Philips Semiconductors Product specification

630 V driver IC for CFL and TL lamps UBA2021

NOTES

2001 Jan 30 19

Philips Semiconductors – a w orldwide compan y

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Tel. [phone], Fax. [phone]
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Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
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Ireland: Newstead, Clonskeagh, DUBLIN 14,
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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
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Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
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Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

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60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260,
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Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2001

Internet: http://www.semiconductors.philips.com

71

Printed in The Netherlands 613502/02/pp20 Date of release:2001 Jan 30 Document order number: 9397 750 07752