Page 1
B-70 01/99
U430, U431
Dual N-Channel Silicon Junction Field-Effect Transistor
¥ Balanced Mixers
¥ Differential Amplifiers
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Gate Source Forward Voltage V
Drain Saturation Current (Pulsed) I
Dynamic Electrical Characteristics
Common Source Forward
Transconductance
Common Source Output Conductance G
Drain Gate Capacitance C
Source Gate Capacitance C
Equivalent Short Circuit
Input Noise Voltage
Power Match Source Admittance g
Conversion Gain G
Saturation Drain Current Ratio I
Gate Source Cutoff Voltage Ratio
Transconductance Ratio g
(BR)GSS
GSS
GS(OFF)
GS(F)
DSS
G
fs
os
dg
gs
¯e
N
ig
c
DSS1/IDSS2
V
GS(OFF)1
V
GS(OFF)2
fs1/gfs2
Absolute maximum ratings at TA= 25¡C.
Total Device Dissipation (Derate 4 mW/°C to150°C) 500 mW
Storage Temperature Range – 65°C to +150°C
Lead Temperature 300°C
U430 U431 Process NJ72
Min Typ Max Min Typ Max Unit Test Conditions
– 25 – 25 V IG= – 1µA, VDS= ØV
– 150 – 150 pA VGS= – 15V, VDS= ØV
– 150 – 150 nA VGS= – 15V, VDS= ØV TA= 150°C
– 1– 4– 2– 6VV
11VV
12 30 24 60 mA VDS= 10V, VGS= ØV
10 17 10 17 mS VDS= 10V, ID= 10 mA f = 1 kHz
12 12 mS V
250 250 µS VDS= 10V, ID= 10 mA f = 1 kHz
0.15 0.15 µS VDS= 10V, ID= 10 mA f = 100 MHz
55pFV
2.5 2.5 pF VDS= ØV, VGS= – 10V f = 1 MHz
10 10
12 12 VDS= 10V, ID= 10 mA f = 100 MHz
33dB
0.9 1 0.9 1 VDS= 10V, VG= ØV
0.9 1 0.9 1 VDS= 10V, ID= 1 nA
0.9 1 0.9 1 VDS= 10V, ID= 10 mA
nV/√Hz
= 10V, ID= 1 nA
DS
= ØV, IG= 10 mA
DS
= 10V, ID= 10 mA f = 100 MHz
DS
= ØV, VGS= – 10V f = 1 MHz
DS
VDS= 10V, ID= 10 mA f = 100 kHz
V
= 20V, RL= 2 kΩ
DS
VGS= 1/2 V
GS(OFF)
f = 100 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ78 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source 1, 2 Gate 1, Drain 1,
4 Case, 5 Drain 2, 6 Gate 2,
7 Source 2, 8 Omitted
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