Datasheet SST3958NL, U3958NL Datasheet (Vishay)

SST3958NL/U3958NL

New Product

Vishay Siliconix

Monolithic N-Channel JFET Dual

PRODUCT SUMMARY

V

FEATURES BENEFITS APPLICATIONS

D Anti Latchup Capability D Monolithic Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 5 pA D Low Noise: 9 D High CMRR: 100 dB

(V) V

GS(off)

-1.0 to -4.5 -50 1 -50 25

(BR)GSS

Min (V) gfs Min (mS) IG Max (pA) jV

GS1

- V

GS2

D External Substrate Bias—Avoids Latchup D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time

Accuracy

D Minimum Input Error/Trimming Requirement

nV⁄√Hz

D Insignificant Signal Loss/Error Voltage D High System Sensitivity D Minimum Error with Large Input Signal

j Max (mV)

D Wideband Differential Amps D High-Speed,

Temp-Compensated, Single-Ended Input Amps

D High Speed Comparators D Impedance Converters

DESCRIPTION

The low cost SST3958NL and U3958NL JFET duals are designed for high-performance differential amplification for a wide range of precision test instrumentation applications. This series features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V.

Pins 4 and 8 on the SST3958NL and pin 4 on the U3958NL part numbers enable the substrate to be connected to a positive, external bias (V

SUBSTRATE S

) to avoid latchup.

DD

Narrow Body SOIC

S

1

D

2

1

G

3

1

4

Top View

Marking Codes:

SST3958NL - 3958NL

8 7 6 5

SUBSTRATE G

2

D

2

The U3958NL in the hermetically-sealed TO-78 package is available with full military processing.

The SST3958NL in the SO-8 package provides ease of manufacturing. The symmetrical pinout prevents improper orientation. The SST3958NL is available with tape-and-reel options for compatibility with automatic assembly methods.

TO-78

S

1

D

1

2

3

G

1

4

CASE, SUBSTRATE

Top View U3958NL

G

2

7

D

2

6

5

S

2

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage -50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (1/16” from case for 10 sec.) 300 _C. . . . . . . . . . . . . . . . . .

Storage Temperature -65 to 200_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

Document Number: 72157 S-22527—Rev. A, 17-Feb-03

Power Dissipation : Per Side

Notes a. Derate 2 mW/_C above 85_C b. Derate 4 mW/_C above 85_C

Total

b

a

250 mW. . . . . . . . . . . . . . . . . . . . . . . .

500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .

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7-1

SST3958NL/U3958NL

V

f = 1 kH

S

VDS = 20 V, ID = 200 mA

Vishay Siliconix

New Product

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter Symbol Test Conditions Min Typ

Static

Gate-Source Breakdown Voltage V Gate-Source Cutoff Voltage V Saturation Drain Current

Gate Reverse Current I

Gate Operating Current I

Gate-Source Voltage V

Gate-Source Forward Voltage V

b

(BR)GSS

GS(off)

I

DSS

GSS

GS(F)

Dynamic

Common-Source Forward Transconductance

Common-Source Output Conductance g Common-Source Input Capacitance C Common-Source

Reverse Transfer Capacitance Drain-Gate Capacitance C

Equivalent Input Noise Voltage e

Noise Figure NF

g

C

Matching

G

GS

fs

os iss

rss

dg

n

IG = -1 mA, VDS = 0 V VDS = 20 V, ID = 1 nA -1.0 -3 -4.5

VDS = 20 V, VGS = 0 V 0.5 5 8 mA

VGS = -30 V, VDS = 0 V -10 -100 pA

VDG = 20 V, ID = 200 mA

IG = 1 mA, VDS = 0 V 2

VDS = 20 V, VGS = 0 V

VDG = 10 V, IS = 0 , f = 1 MHz 1.5

VDS = 20 V, VGS = 0 V, f = 1 kHz 11

VDS = 20 V, VGS = 0 V

f = 100 Hz, R

f = 1 MHz

G

z

= 10 MW

TA = 150_C

TA =125_C

ID = 50 mA

Limits

a

Max Unit

-50 -57

-20 -500 nA

-5 -50 pA

-0.8 -250 nA

-0.5 -2.5 -4

-4.2

1 3.0 3.6 mS

8 35 3 4

1 1.2

0.5 dB

V

mS

pF

nV⁄

√Hz

Differential Gate-Source Voltage

Gate-Source Voltage Differential Change with Temperature

Saturation Drain Current Ratio

Transconductance Ratio

Differential Output Conductance

Differential Gate Current

Common Mode Rejection Ratio CMRR

Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NQP b. Pulse test: PW v300 ms duty cycle v3%.

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7-2

|

V

GS1–VGS2

|

D

V

GS1–VGS2

|

g

os1–gos2

|

I

G1–IG2

DT

I

DSS1

I

DSS2

g g

fs1 fs2

|

VDG = 20 V, ID = 200 mA

T

= -55 to 125_C

A

VDS = 20 V, VGS = 0 V 0.85 0.97 1

0.85 0.97 1

V

= 20 V, ID = 200 mA

D

f = 1 kHz

VDG = 20 V, ID = 200 mA

T

= 125_C

A

VDG = 10 to 20 V, ID = 200 mA

15 25 mV

20 100

0.1

0.1 10 nA

100 dB

Document Number: 72157

S-22527—Rev. A, 17-Feb-03

mV/_C

mS

SST3958NL/U3958NL

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

vs. Gate-Source Cutoff Voltage

5

4

g

3

2

- Saturation Drain Current (mA)

DSS

1

I

0

0-5-4-3-2-1

fs

I

DSS

@ VDG = 15 V, VGS = 0 V

g

fs

f = 1 kHz

V

- Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)

GS(off)

Output Characteristics Output Characteristics

5

V

= -2 V

GS(off)

4

I

DSS

@ VDS = 15 V, VGS = 0 V

3

g

fs

- Forward Transconductance (mS)

2.6

2.2

1.8

1.4

1

100 nA

10 nA

1 nA

100 pA

- Gate Leakage G

10 pA

I

1 pA

0.1 pA 0302010 40 50

5

4

TA = 25_C

Gate Leakage Current

TA = 125_C

I

@ 125_C

GSS

200 mA

V

= -3 V

GS(off)

Vishay Siliconix

IG @ ID = 200 mA

50 mA

I

@ 25_C

GSS

VGS = 0 V

-0.3 V

3

2

- Drain Current (mA) D

I

1

0

012168420

VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)

VGS = 0 V

-0.2 V

-0.4 V

-0.6 V

-1.0 V

-1.2 V

-1.4 V

-0.8 V

- Drain Current (mA) D

I

Output Characteristics Output Characteristics

2

V

= -2 V

GS(off)

1.6

1.2

0.8

- Drain Current (mA) D

I

0.4

0

0 0.6 0.80.40.2 1

VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V)

VGS = 0 V

-1.6 V

-0.2 V

-0.4 V

-0.6 V

-0.8 V

-1.0 V

-1.2 V

-1.4 V

- Drain Current (mA) D

I

-0.6 V

3

2

1

0

012168420

2.5 V

= -3 V

GS(off)

2.0

1.5

1.0

0.5

0

0 0.6 0.80.40.2 1

VGS = 0 V

-0.9 V

-1.2 V

-1.5 V

-1.8 V

-2.1 V

-2.4 V

-0.3 V

-0.6 V

-0.9 V

-1.2 V

-1.5 V

-1.8 V

-2.1 V

-2.4 V

Document Number: 72157 S-22527—Rev. A, 17-Feb-03

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7-3

SST3958NL/U3958NL

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Gate-Source Differential Voltage

VDG = 20 V T

= 25_C

A

Common Mode Rejection Ratio

CMRR = 20 log

DVDG = 10 - 20 V

5

4

3

2

- Drain Current (mA) D

I

125_C

1

0

0 -1.5-1.0-0.5 -2.0 -2.5

100

V/ _C

m

()

10

GS2

V

-

t

D

GS1

V

D

Transfer Characteristics

100

V

= -2 V

GS(off)

TA = -55_C

25_C

VGS - Gate-Source Voltage (V) ID - Drain Current (mA)

VDS = 20 V

(mV)

GS2

10

V

-

GS1

V

1

0.01 0.1 1

Voltage Differential with Temperature

vs. Drain Current

130

VDG = 20 V

120

DTA = 25 to 125_C

110

DTA = -55 to 25_C

100

CMRR (dB)

90

vs. Drain Current

D

V

5 - 10 V

DV

DG

-

GS1 VGS2

1

0.01 0.1 1

100

80

60

- Voltage Gain

40

V

A

20

0

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7-4

I

- Drain Current (mA) ID - Drain Current (mA)

D

Circuit Voltage Gain vs. Drain Current

V

= -3 V

GS(off)

g

V

L

+

1 ) RLg

10 V

+

fsRL

os

I

D

I

- Drain Current (mA)

D

0.1 10.01

A

Assume VDD = 15 V, VDS = 5 V

R

-2 V

80

0.01 0.1 1

On-Resistance vs. Drain Current

V

= -2 V

GS(off)

-3 V

0.01 0.1 1 ID - Drain Current (mA)

Document Number: 72157

S-22527—Rev. A, 17-Feb-03

- Drain-Source On-Resistance ( Ω )

DS(on)

r

1 k

800

600

400

200

0

SST3958NL/U3958NL

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Source Input Capacitance

10

8

6

4

- Input Capacitance (pF)C iss

2

0

0 -12 -16 -20-8-4

Equivalent Input Noise Voltage vs. Frequency

20

16

12

vs. Gate-Source Voltage

f = 1 MHz

VDS = 0 V

5 V

15 V

20 V

- Gate-Source Voltage (V)

V

GS

ID @ 200 mA

- Reverse Feedback Capacitance (pF)C rss

2.5

VDS = 20 V

2.0

1.5

Common-Source Reverse Feedback

Capacitance vs. Gate-Source Voltage

5

f = 1 MHz

4

VDS = 0 V

3

5 V

2

1

20 V

0

0 -12 -20-16-8-4

15 V

VGS - Gate-Source Voltage (V)

Output Conductance vs. Drain Current

V

= -2 V VDS = 20 V

GS(off)

Vishay Siliconix

f = 1 kHz

TA = -55_C

8

en - Noise Voltage nV / Hz

4

0

10 100 1 k 100 k10 k

VGS = 0 V

f - Frequency (Hz)

Common-Source Forward Transconductance

2.5 V

GS(off)

2.0

1.5

1.0

0.5

- Forward Transconductance (mS)

fs

g

0

0.01 0.1 1

vs. Drain Current

= -2 V VDS = 20 V

25_C

ID - Drain Current (mA)

f = 1 kHz

TA = -55_C

125_C

1.0

- Output Conductance (µS)

os

0.5

g

0

0.01 0.1 1

25_C

125_C

ID - Drain Current (mA)

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

rDS @ ID = 100 mA, VGS = 0 V

@ VDS = 20 V, VGS = 0 V, f = 1 kHz

g

os

0

V

- Gate-Source Cutoff Voltage (V)

GS(off)

g

os

r

DS

-3 -5-4-2-1

- Drain-Source On-Resistance ( Ω )

DS(on)

r

1 k

800

600

400

200

0

10

os

8

- Output Conductance ( m

6

4

S)g

2

0

Document Number: 72157 S-22527—Rev. A, 17-Feb-03

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7-5

Datasheet SST3958NL, U3958NL Datasheet (Vishay) [ru]