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B-68 01/99
U311
N-Channel Silicon Junction Field-Effect Transistor
¥ Mixer
¥ Oscillator
¥ VHF/UHF Amplifier
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 10 mA
Continuous Device Power Dissipation 300 mW
Power Derating 2.4 mW/°C
TOÐ72 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case
At 25°C free air temperature: U311 Process NJ72L
Static Electrical Characteristics Min Typ Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 25 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 150 pA VGS= – 15V, VDS= ØV
– 150 nA VGS= – 15V, VDS= ØV TA= 150°C
Gate Source Cutoff Voltage V
GS(OFF)
– 1 – 6 V VDS= 10V, ID= 1 nA
Gate Source Forward Voltage V
GS(F)
1VVDS= ØV, IG= 1 mA
Drain Saturation Current (Pulsed) I
DSS
20 60 mA VDS= 10V, VGS= ØV
Dynamic Electrical Characteristics
Common Gate Forward Transconductance g
fg
1000 17000 µS VDS= 10V, ID= 10 mA f = 1 kHz
Common Gate Output Conductance g
og
250 µS VDS= 10V, ID= 10 mA f = 1 kHz
Gate Drain Capacitance C
dg
2.5 pF VDS= 10V, ID= 10 mA f = 1 MHz
Gate Source Capacitance C
gs
5pFVDS= 10V, ID= 10 mA f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-68
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