Datasheet TYN625RG, TYN625, TYN825RG, TYN825, TYN1025RG Datasheet (SGS Thomson Microelectronics)

®

TN25 and TYNx25 Series

STANDARD 25A SCRs

MAIN FEATURES:

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

25 A

600 to 1000 V

40 mA

DESCRIPTION

The TYN / TN25 SCR Series is suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.

ABSOLUTE RATINGS (lim iting values)

K

A

G

D2PAK

(TN25-G)

A

G

K

A

K

A

G

A

TO-220AB

(TYN)

Symbol Parameter Value Unit

I

T(RMS)

T

(AV)

I

TSM

²

I

dI/dt

I

GM

P

G(AV)

T

stg

Tj

V

RGM

RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)

Non repetitive surge peak on-state
current

tI

²

t Value for fusing

Critical rate of rise of on-state current
I

= 2 x IGT , tr ≤ 100 ns

G

tp = 8.3 ms

tp = 10 ms 300
tp = 10 ms Tj = 25°C 450

F = 60 Hz Tj = 125°C 50 A/µs

Tc = 100°C 25

Tc = 100°C 16

Tj = 25°C

Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W

Storage junction temperature range
Operating junction temp erature range

- 40 to + 150

- 40 to + 125

Maximum peak reverse gate voltage 5

314

April 2002 - Ed: 4A

A
A

A

2

S

A

°C

V

1/7

TN25 and TYNx25 Series

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol Test Conditions Value Unit

I

GT

VD = 12 V RL = 33 Ω

V

GT

V

GD

I

H

I

L

dV/dt

V

TM

V

t0

R

d

I

DRM

I

RRM

VD = V

RL = 3.3 kΩ

DRM

IT = 500 mA Gate open
IG = 1.2 I
V

= 67 % V

D

GT

Gate open

DRM

ITM = 50 A tp = 380 µs
Threshold voltage Tj = 125°C MAX. 0.77 V
Dynamic resistance Tj = 125°C MAX. 14 mΩ

V

= V

DRM

RRM

Tj = 125°C MIN.

Tj = 125°C MIN. 1000 V/µs

Tj = 25°C MAX. 1.6 V

Tj = 25°C MAX. 5 µA

Tj = 125°C 4 mA

THERMAL RESISTANCES

Symbol Parameter Value Unit

R
R

th(j-c)
th(j-a)

Junction to case (DC)
Junction to ambient (DC) TO-220AB 60 °C/W

S = 1 cm

²

MIN. 4
MAX. 40
MAX.

1.3 V

0.2 V
MAX. 50 mA
MAX. 90 mA

1.0

D²PAK

45

mA

°C/W

S = Copper surface under tab

PRODUCT SELECTOR

Part Number

600 V 800 V 1000 V

TN2540-xxxG X X X 40 mA
TYNx25 X X X 40 mA TO-220AB

Voltage (xxx)

Sensitivity

Package

²

D

PAK

2/7

TN25 and TYNx25 Series

ORDERING INFORMATION

TN 25 40 - 600 G (-TR)

STANDARD
SCR
SERIES

CURRENT:25A

SENSITIVITY:
40: 40mA

VOLTAGE:

600: 600V
800: 800V

1000: 1000V

PACKAGE:

2

G: D PAK

PACKING MODE:
Blank:Tube

-TR:Tape & Reel

TYN 6 25 (RG)

STANDARD
SCR
SERIES

VOLTAGE:

6: 600V
8: 800V

10: 1000V

CURRENT:25A

PACKING MODE
Blank: Bulk
RG:Tube

OTHER INFORMATION

Part Number Marking Weight Base Quantity Packing mode

TN2540-x00G TN2540x00G 1.5 g 50 Tube
TN2540-x00G-TR TN2540x00G 1.5 g 1000 Tape & reel
TYNx25 TYNx25 2.3 g 250 Bulk
TYNx25RG TYNx25 2.3 g 50 Tube

Note: x = voltage

3/7

TN25 and TYNx25 Series

0

Fig. 1: Maximum average power dissipation
versus average on-state current.

P(W)

24

α = 180°

22
20
18
16
14
12
10

8
6
4
2
0

0246810121416

IT(av)(A)

360°

α

Fig. 2-2: Average and D.C. on-state current
versus ambient temperature (copper surface

under tab: S = 1 cm² (for D²PAK).

IT(av)(A)

4.0

3.5

3.0

2.5

α = 180°

2.0

1.5

1.0

0.5

0.0
0 25 50 75 100 125

D.C.

Tamb( °C)

Fig. 2-1: Average and D.C. on-state current
versus case temperature.

IT(av)(A)

28
26
24
22
20
18
16
14
12
10

8
6
4
2
0

0 25 50 75 100 125

D.C.

α = 180°

Tcase(°C)

Fig. 3: Relative variation of thermal impedance
versus pulse duration.

K = [Zth/Rth]

1.00

Zth(j-c)

0.10

0.01
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Zth(j-a)

tp(s)

Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature.

IGT,IH,IL [T j] / IG T,IH,IL [Tj = 25°C]

2.5

2.0

1.5

1.0

0.5

0.0

-40 -20 0 20 40 60 80 100 120 140

4/7

IGT

IH & IL

Tj(°C)

Fig. 5: Surge peak on-state current versus
number of cycles.

ITSM(A)

350
300
250
200
150
100

50

0

1 10 100 100

Non repetitive

Tj initial = 25°C

Repetitive

Tcase = 100°C

Number of c

ycles

tp = 10ms

One cycle

TN25 and TYNx25 Series

Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding values of I²t.

ITSM(A),I2t(A2s)

2000

1000

dI/dt

limitattion

100

0.01 0.10 1.00 10.00

tp(ms)

Tj initial = 25°C

ITSM

I2t

Fig. 8: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)

2

(D

PAK).

Rth(j-a)(°C/W)

80
70
60
50
40
30
20
10

0

0 4 8 1216202428323640

S(cm2)

Fig. 7: On-state characteristics (maximum
values).

ITM(A)

300

Tj max.:
Vto = 0.77V
Rd = 14mΩ

100

Tj = Tj max.

10

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Tj = 25°C

VTM(V)

5/7

TN25 and TYNx25 Series

PACKAGE MECHANICAL DAT A

2

PAK (Plastic)

D

DIMENSIONS

A

L2

L

L3

E

B2

B

G

2.0 MIN.
FLAT ZONE

C2

A1

C

A2

FOOTPRINT DIMENSIONS (in millimete r s )

2

PAK (Plastic)

D

V2

REF.

Millimeters Inches

Min. Typ. Max. M in. Typ. Max.

A 4.30 4.60 0.169 0.181

A1 2.49 2.69 0. 098 0.106

D

A2 0.03 0.23 0. 001 0.009

B 0.70 0.93 0.027 0.037

B2 1.25 1.40 0.048 0.055

C 0.45 0.60 0.017 0.024

C2 1.21 1.36 0.047 0.054

R

D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0. 405

G 4.88 5.28 0. 192 0.208

L 15.00 15.85 0. 590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069

R 0.40 0.016

V2 0° 8° 0° 8 °

6/7

10.30

16.90

5.08

1.30

3.70

8.90

TN25 and TYNx25 Series

PACKAGE MECHANICAL DAT A

TO-220AB (Plastic)

DIMENSIONS

B

L

I

A

C

b2

F

REF.

A 15.20 15.90 0.598 0.625
a1 3.75 0.14 7
a2 13.0 0 14.00 0.511 0.551

B 10.00 10.40 0.393 0.409

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

b1 0.61 0.88 0.024 0.034

l4

b2 1.23 1.32 0.048 0.051

C 4.40 4.60 0.173 0.181

a1

l3

l2

a2

c2

c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107

e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0. 259

I 3.75 3.85 0.147 0. 151

I4 15.80 16.40 16.80 0.622 0.646 0.661

b1

e

M

c1

L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0. 066
l3 1.14 1.70 0.044 0. 066
M 2.60 0.10 2

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