Datasheet TYN810, TYN1010, TYN610, TYN410, TYN210 Datasheet (SGS Thomson Microelectronics)

Page 1
®
FEATURES
High surge capability
High on-state current
DESCRIPTION
The TYN210 ---> TYN1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology.
This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load.
TYN210 ---> TYN1010
SCR
A
G
K
K
A
G
TO-220AB
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
I
T(AV)
I
TSM
2
I
dI/dt Critical rate of rise of on-state current
Tstg
Tj Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C
Symbol Parameter
V
DRM
V
RRM
RMS on-state current (180° conduction angle) Tc = 100°C 10 A Average on-state current
Tc = 100°C 6.4 A
(180° conduction angle, single phase circuit) Non repetitive surge peak on-state current
(Tj initial = 25°C)
tI
2
t value tp = 10ms 50 A2s
Gate supply: I
= 100mA dIG/dt = 1A/µs
G
tp = 8.3ms 105 A
tp = 10ms 100
Storage and operating junction temperature range -40 to +150
-40 to +125
TYN
210 410 610 810 1010
Repetitive peak off-state voltage
200 400 600 800 1000 V
Tj = 125°C
50 A/µs
°C
Unit
September 2001 - Ed: 1A
1/4
Page 2
TYN210 ---> TYN1010
THERMAL RESISTANCE
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 2.5 °C/W
GATE CHARACTERISTICS (maximum values) P
ELECTRICAL CHARACTERISTICS
=1W PGM= 10W (tp = 20µs) I
G(AV)
= 4A (tp = 20µs) V
FGM
RGM
=5V
Symbol Test conditions Value Unit
I
GT
V
GT
V
GD
tgt VD=V
I
I
V
TM
I
DRM
I
RRM
VD= 12V (DC) RL=33 Tj = 25°C MAX. 15 mA VD= 12V (DC) RL=33 Tj = 25°C MAX. 1.5 V VD=V
DRM
DRMIG
dI
/dt = 0.5A/µs
G
IG= 1.2I
L
IT= 100mA Gate open Tj = 25°C MAX. 30 mA
H
GT
RL= 3.3k Tj =110°C MIN. 0.2 V
= 40mA
ITM= 20A tp = 380µs Tj = 25°C MAX. 1.6 V V
rated
DRM
V
rated
RRM
dV/dt Linear slope up to
tq V
VD= 67% V
=67%V
D
dI
/dt=30 A/µsdVD/dt= 50V/µs
TM
gate open
DRM
DRMITM
= 20A VR= 25V
Fig. 1: Maximum average power dissipation ver­sus average on-state current.
P(W)
12
10
8
6
4
2
0
0123456789
360
O
DC
o
=180
o
=120
o
=90
o
=60
=30
o
I(A)
T(AV)
Tj = 25°C TYP. 2 µs
Tj = 25°C TYP. 50 mA
Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 2 Tj = 110°C MIN. 200 V/µs
Tj = 110°C TYP. 70 µs
Fig. 2: Correlation between maximum average power dissipation and maximum allowable temper­atures (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W) Tcase ( C)
12
10
8
6
4
2
0
0 20406080100120140
= 180
o
o
Tamb ( C)
o
Rth = 0 C/W
o
2C/W
o
4C/W
o
6C/W
o
-100
-105
-110
-115
-120
-125
2/4
Page 3
TYN210 ---> TYN1010
Fig. 3: Average on-state current versus case tem-
perature.
I (A)
T(AV)
12
o
o
Tcase ( C)
DC
10
8
6
4
2
0
0 102030405060708090100110120130
= 180
Fig. 5: Relative variation of gate trigger current versus junction temperature.
Fig. 4: Relative variation of thermal impedance versus pulse duration.
Zth/Rth
1
Zth(j-c)
0.1
0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Zth(j-a)
tp(s)
Fig. 6: Non repetitive surge peak on-state current versus number of cycles.
Fig. 7: Non repetitive surge peak on-state current forasinusoidalpulsewithwidth:t 10ms, and cor­responding value of I
2
t.
Fig. 8: On-state characteristics (maximum values).
3/4
Page 4
TYN210 ---> TYN1010
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
B
L
I
A
l4
a1
l3
l2
a2
b1
e
DIMENSIONS
REF.
C
b2
A 15.20 15.90 0.598 0.625
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
a1 3.75 0.147 a2 13.00 14.00 0.511 0.551
F
B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027
c2
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
M
c1
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
OTHER INFORMATION
Ordering type Marking Package Weight Base qty Delivery mode
TYNxx10 TYNxx10 TO-220AB 2.3 g 250 Bulk
Epoxy meets UL94,V0
Cooling method: C
Recommended torque value: 0.8 m.N.
Maximum torque value: 1 m.N.
Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumesnoresponsibilityfortheconsequencesof useofsuchinformation nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
4/4
Loading...