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TSHF5200
Vishay Telefunken
High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package
Description
TSHF5200 is a high speed infrared light emitting diode
in GaAlAs on GaAlAs double hetero (DH) technology ,
molded on copper frame, in a clear, untinted plastic
package.
The new technology combines the high speed of DH–
GaAlAs with the efficiency of standard GaAlAs and the
low forward voltage of the standard GaAs technology .
The TSHF5200 emitter is suitable for serial infrared
links according to the IrDA–standard.
Features
D
High modulation bandwidth (10 MHz)
D
High radiant power
D
Low forward voltage
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Angle of half intensity ϕ = ± 10
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 870 nm
°
94 8390
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or
high data transmission rate requirements.
TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
1.5 A
160 mW
100
–40...+100
–40...+100
260
270 K/W
°
C
°
C
°
C
°
C
Document Number 81023
Rev. 3, 02-Aug-99
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1 (6)
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TSHF5200
g
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
IF = 1 A, tp = 100 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Radiant Intensity IF = 100 mA, tp = 20 ms I
IF = 1 A, tp = 100 ms I
Radiant Power IF = 100 mA, tp = 20 ms
Temp. Coefficient of
f
e
IF = 100 mA TK
F
F
VF
R
j
e
e
f
e
50 100 mW/sr
f
e
Angle of Half Intensity ϕ ±10 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
Fall Time IF = 100 mA t
l
Dl
p
l
p
r
f
1.35 1.6 V
2.4 V
–1.7 mV/K
10
m
160 pF
1000 mW/sr
35 mW
–0.7 %/K
870 nm
40 nm
0.2 nm/K
30 ns
30 ns
A
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Document Number 81023
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TSHF5200
Vishay Telefunken
Typical Characteristics (T
= 25_C unless otherwise specified)
amb
180
160
140
120
100
80
60
40
V
P – Power Dissipation ( mW )
20
0
0 102030405060708090100
T
– Ambient Temperature ( °C )16084
amb
Figure 1. Power Dissipation vs. Ambient Temperature
120
100
80
60
40
4
10
3
10
2
10
1
10
F
I – Forward Current ( mA )
0
10
0123
V
94 8880
– Forward Voltage ( V )
F
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
0.9
4
F
I – Forward Current ( mA )
20
0
0 102030405060708090100
T
– Ambient Temperature ( °C )16085
amb
Figure 2. Forward Current vs. Ambient Temperature
1
10
tp/T=0.01, I
FSM
= 1 A
T
<57_C
amb
0.02
0
10
0.05
0.1
F
I – Forward Current ( A )
0.2
0.5
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )16086
Figure 3. Pulse Forward Current vs. Pulse Duration
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1000
100
10
1
e
I – Radiant Intensity ( mW/sr )
0.1
3
10
94 8881
0
10
1
10
I
– Forward Current ( mA )
F
2
10
Figure 6. Radiant Intensity vs. Forward Current
100
10
4
Document Number 81023
Rev. 3, 02-Aug-99
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TSHF5200
Vishay Telefunken
1000
100
10
– Radiant Power ( mW )
1
e
F
0.1
0
10
1
10
2
10
3
10
IF – Forward Current ( mA )94 8007 e
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
F
0.8
e rel e rel
I /
0.4
0
–10 10 500 100
T
94 8882
– Ambient Temperature ( °C )
amb
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
10
140
1.25
1.0
0.75
0.5
– Radiant Power ( mW )
e
F
0.25
0
4
780 880
95 9886
l
– Wavelength ( nm )
980
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
e rel
I – Relative Radiant Intensity
0.7
50°
60°
70°
80°
0.6
15989
0.4 0.2 0 0.2 0.4
0.6
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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Page 5
Dimensions in mm
TSHF5200
Vishay Telefunken
95 10916
Document Number 81023
Rev. 3, 02-Aug-99
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TSHF5200
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6) Rev. 3, 02-Aug-99
Document Number 81023
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