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TSHA650.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾)
Package
Description
The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs
technology these high intensity emitters feature about
70 % radiant power improvement.
In contrast to the TSHA550. series lead stand–offs are
omitted.
Features
D
Extra high radiant power
D
Suitable for high pulse current operation
D
Standard T–1¾ (ø 5 mm) package
D
Leads formed without stand–off
D
Angle of half intensity ϕ = ± 24
D
Peak wavelength
D
High reliability
D
Good spectral matching to Si photodetectors
lp = 875 nm
°
94 8389
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also
suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Current tp/T = 0.5, tp = 100 ms I
Surge Forward Current tp = 100 ms I
Power Dissipation P
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
t x 5sec, 2 mm from case
FSM
T
R
F
FM
V
j
amb
stg
sd
thJA
5 V
100 mA
200 mA
2.5 A
210 mW
100
–55...+100
–55...+100
260
350 K/W
°
C
°
C
°
C
°
C
Document Number 81022
Rev. 3, 20-May-99
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Page 2
TSHA650.
gFm
F
Radiant Intensity
F
m
F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms V
Temp. Coefficient of V
F
IF = 100mA TK
Reverse Current VR = 5 V I
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Temp. Coefficient of
f
e
IF = 20 mA TK
F
VF
R
j
f
e
Angle of Half Intensity ϕ ±24 deg
Peak Wavelength IF = 100 mA
Spectral Bandwidth IF = 100 mA
Temp. Coefficient of
l
p
IF = 100 mA TK
Rise Time IF = 100 mA t
IF = 1.5 A t
Fall Time IF = 100 mA t
IF = 1.5 A t
l
Dl
p
l
p
r
r
f
f
1.5 1.8 V
–1.6 mV/K
100
m
20 pF
–0.7 %/K
875 nm
80 nm
0.2 nm/K
600 ns
300 ns
600 ns
300 ns
A
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward Voltage IF=1.5A, tp=100ms TSHA6500/6501 V
TSHA6502/6503 V
IF=100mA, TSHA6500 I
tp=20ms
TSHA6501 I
TSHA6502 I
TSHA6503 I
IF=1.5A, tp=100ms TSHA6500 I
TSHA6501 I
TSHA6502 I
TSHA6503 I
Radiant Power IF=100mA, TSHA6500
tp=20ms
TSHA6501
TSHA6502
TSHA6503
F
F
e
e
e
e
e
e
e
e
f
e
f
e
f
e
f
e
12 20 mW/sr
16 25 mW/sr
20 30 mW/sr
24 35 mW/sr
150 240 mW/sr
200 300 mW/sr
250 360 mW/sr
300 420 mW/sr
3.2 4.9 V
3.2 4.5 V
22 mW
23 mW
24 mW
25 mW
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Document Number 81022
Page 3
TSHA650.
Vishay Telefunken
Typical Characteristics (T
= 25_C unless otherwise specified)
amb
250
200
150
R
thJA
100
V
50
P – Power Dissipation ( mW )
94 7957 e
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 1. Power Dissipation vs. Ambient Temperature
125
100
75
4
10
tp = 100 ms
t
/T = 0.001
p
V
– Forward Voltage ( V )
F
F
I – Forward Current ( mA )
94 8005 e
3
10
2
10
1
10
0123
Figure 4. Forward Current vs. Forward Voltage
1.2
1.1
IF = 10 mA
1.0
4
50
F
I – Forward Current ( mA )
25
94 8002 e
0
020406080
T
– Ambient Temperature ( °C )
amb
100
Figure 2. Forward Current vs. Ambient Temperature
1
10
I
= 2.5 A ( Single Pulse )
FSM
tp/T=0.01
0
10
0.05
0.1
F
I – Forward Current ( A )
0.2
0.5
–1
10
–2
10
–1
10
0
10
1
10
2
10
tp – Pulse Duration ( ms )94 8003 e
0.9
Frel
0.8
V – Relative Forward Voltage
0.7
020406080
T
94 7990 e
– Ambient Temperature ( °C )
amb
Figure 5. Relative Forward Voltage vs.
Ambient Temperature
1000
TSHA 6503
TSHA 6502
100
10
e
I – Radiant Intensity ( mW/sr )
1
0
10
1
10
IF – Forward Current ( mA )94 8746
TSHA 6500
2
10
TSHA 6501
3
10
100
10
4
Figure 3. Pulse Forward Current vs. Pulse Duration
Document Number 81022
Rev. 3, 20-May-99
Figure 6. Radiant Intensity vs. Forward Current
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TSHA650.
Vishay Telefunken
1000
100
10
– Radiant Power ( mW )
1
e
F
0.1
0
10
1
10
2
10
3
10
IF – Forward Current ( mA )94 8015 e
Figure 7. Radiant Power vs. Forward Current
1.6
1.2
IF = 20 mA
F
0.8
e rel e rel
I ;
0.4
0
–10 10 500 100
T
94 8020 e
– Ambient Temperature ( °C )
amb
Figure 8. Rel. Radiant Intensity\Power vs.
Ambient Temperature
10
140
1.25
1.0
0.75
0.5
– Relative Radiant Power
e
F
0.25
IF = 100 mA
F
(l)
=
Fe(l)/
Fe(
e
0
4
780 880
94 8000 e
rel
l
– Wavelength ( nm )
lp)
980
Figure 9. Relative Radiant Power vs. Wavelength
0°
10°20
°
30°
40°
1.0
0.9
0.8
e rel
0.7
I – Relative Radiant Intensity
0.4 0.2 0 0.2 0.4
0.6
94 8016 e
50°
60°
70°
80°
0.6
Figure 10. Relative Radiant Intensity vs.
Angular Displacement
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Document Number 81022
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Page 5
Dimensions in mm
TSHA650.
Vishay Telefunken
14436
Document Number 81022
Rev. 3, 20-May-99
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TSHA650.
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6) Rev. 3, 20-May-99
Document Number 81022
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