Datasheet TSH691ID Datasheet (SGS Thomson Microelectronics)



LOW COST 40MHz - 1GHz AMPLIFIER

.

28dB GAIN @3V @ 450MHz

.

+13.5dBmOUTPUTPOWER(P1dB)

.

BIASPIN FOR OUTPUTPOWER& AMPLI­FIER DISABLE

.

50Ω INPUT/OUTPUTMATCHING

DESCRIPTION

TSH691 is a low cost RF amplifier consisted of 2
stages,designedin advancedbipolarprocess, fea­turing high performances.Anexternal bias current
adjust allowsto tunethe outputpower and also to
settheamplifierinpower-downmode.TheTSH691
is intended to RF consumer equipments in ISM
band (remote controls, ASK transmitters) where
cost issensitive

D

SO8

(Plastic Micropackage)

ORDER CODES

Part Number Temperature Range

o

TSH691ID -35, +85

C •

TSH691

Package

D

PIN CONNECTIONS (top view)

RF out

June 1998

GND

GND
GND

1

2

3

4

8

7

6

5

Vbias

V

CC

GND

RF in

1/10

TSH691

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

CC1,VCC2,Vbias

RF in RF Input Power +10 dBm

RF out RF Output Power +21 dBm

T

oper

T

stg

Supply Voltages & Bias Voltage 5.5 V

Operating Free Air Temperature Range -35 to +85
Storage Temperature Range -65 to +150

OPERATINGCONDITIONS

Symbol Parameter Value Unit

V

CC1,VCC2,Vbias

V

bias

RF

sr

Supply Voltages 1.5 to 5 V
Bias Voltage 0to 6 V
RF Signal Range 40 to 1000 MHz

ESD SENSITIVEDEVICE

Handling Precautions Required

o

C

o

C

2/10

ELECTRICAL CHARACTERISTICS

=25oC, VCC&V

T

amb

=+2.7V,ZL=50Ω

bias

TSH691

Parameter

SupplyCurrent 46 mA
S21 (V
S21 (Vin= -20dBm, f = 900MHz) 17 dB
Output Power 1dB Compression (f = 450MHz) 12 dBm
3rd Order Intercept Point (f = 430MHz) 22 dBm
S12 (Reverse Isolation @ f = 400MHz) -46 dB
S11 (Input Return Loss @ f =450MHz) -15 dB
S11 (Input Return Loss @ f =900MHz) -10 dB
Noise Figure @ f = 450MHz 4.5 dB
Noise Figure @ f = 900MHz 5.4 dB
R

All parameters with min. ormax. figures are 100% tested.

= -20dBm, f = 450MHz) 20 23 30 dB

in

Junction Ambient Thermal Resistance For SO8 Package 140 180

th(j-a)

Min. Typ. Max.

TSH691

o

SO8 PACKAGE THERMAL RESISTIVITY

Tamb (°C)

150
135
120
105

90
75
60
45
30

DEVICE

OVERSTRESSED

RIGHT BEHAVIOUR

Rthmin

Rthmax

Unit

C/W

123456

DEFINITION

R

th(j-a)

(oC) Maximum Die JuntionTemperature

T

j

T

amb

P

(W) Maximum DissipatedPower

d

JunctionAmbientThermalResistance

o

(~ 150

C)

(oC) Ambient Temperature

(P

= 0.75 VCC• ICC)

d

Vcc (V)

REMARKS

The right behaviour is obtained when the follow­ing equation is fulfilled.

T

j-Tamb=Pd•Rth(j-a)

3/10

TSH691

TYPICALSCATTERING PARAMETERS (Reference waves planes at package leads)

TEST CONDITIONS V

Freq S11 S21 S12 S22
MHz Mag Ang Mag Ang Mag Ang Mag Ang

40 0.642 -22.0 6.319 5.0 0.003 -126.5 0.715 -54.7

50 0.615 -25.7 6.406 7.1 0.008 170.7 0.631 -64.7
100 0.537 -41.3 7.643 7.7 0.002 70.1 0.369 -91.3
150 0.490 -55.6 9.353 3.1 0.004 -141.9 0.253 -100.9
200 0.464 -68.0 11.502 -5.7 0.007 -117.3 0.202 -100.9
250 0.428 -79.0 13.856 -18.0 0.003 162.3 0.203 -92.7
300 0.413 -92.1 16.229 -33.4 0.005 142.1 0.209 -87.6
350 0.373 -101.5 18.019 -51.2 0.008 101.4 0.263 -89.4
400 0.334 -106.7 19.110 -70.1 0.008 115.2 0.326 -99.7
450 0.312 -111.5 19.159 -90.3 0.008 169.9 0.382 -112.1
500 0.290 -112.5 18.154 -108.0 0.008 111.5 0.395 -122.9
550 0.302 -114.5 16.778 -124.8 0.010 92.1 0.425 -130.0
600 0.324 -118.2 15.075 -140.5 0.015 93.6 0.424 -139.6
650 0.335 -122.9 13.482 -153.6 0.011 109.6 0.427 -150.8
700 0.349 -129.6 11.992 -165.5 0.011 101.7 0.425 -159.0
750 0.368 -135.0 10.750 -177.2 0.019 82.4 0.414 -169.5
800 0.366 -142.1 9.453 173.4 0.011 79.5 0.413 -177.8
850 0.373 -147.9 8.598 165.0 0.015 60.2 0.432 176.2
900 0.374 -154.1 7.783 155.8 0.013 89.7 0.438 166.4
950 0.381 -159.0 7.117 146.7 0.017 111.3 0.447 160.8

1000 0.377 -165.8 6.500 138.9 0.013 82.2 0.462 155.1

CC1,VCC2,Vbias

= +2V,Pin = -40dBm,T

amb

=25oC

4/10

TSH691

TEST CONDITIONS V

Freq S11 S21 S12 S22
MHz Mag Ang Mag Ang Mag Ang Mag Ang

40 0.616 -23.3 9.237 6.2 0.002 -135.8 0.733 -56.9

50 0.595 -27.0 9.402 7.9 0.005 -169.5 0.651 -67.7
100 0.513 -43.4 11.263 6.5 0.006 -153.8 0.381 -101.7
150 0.470 -57.7 13.566 0.9 0.006 94.5 0.227 -119.1
200 0.436 -71.1 16.434 -8.6 0.007 155.8 0.156 -117.5
250 0.402 -82.2 19.416 -21.3 0.007 154.1 0.134 -100.3
300 0.382 -95.0 22.265 -36.6 0.005 7.2 0.135 -75.7
350 0.343 -103.3 24.337 -53.7 0.008 40.6 0.193 -78.0
400 0.302 -109.7 25.564 -71.8 0.010 125.9 0.269 -86.1
450 0.279 -114.8 25.594 -91.2 0.008 167.1 0.316 -100.6
500 0.271 -114.0 24.292 -108.3 0.011 120.2 0.356 -111.0
550 0.280 -116.1 22.527 -124.7 0.013 101.0 0.396 -119.3
600 0.306 -119.8 20.511 -140.1 0.005 89.9 0.404 -131.3
650 0.315 -125.5 18.282 -153.2 0.006 107.2 0.400 -142.6
700 0.330 -131.1 16.311 -165.1 0.007 78.9 0.406 -151.6
750 0.333 -136.2 14.604 -177.1 0.012 84.5 0.398 -160.4
800 0.343 -142.5 12.860 173.6 0.017 76.0 0.399 -170.5
850 0.346 -148.0 11.668 165.1 0.014 90.8 0.411 -178.8
900 0.354 -155.1 10.579 156.0 0.018 75.6 0.413 170.9
950 0.347 -159.6 9.652 147.0 0.013 66.6 0.439 165.2

1000 0.355 -166.2 8.775 139.2 0.018 75.3 0.459 157.3

CC1,VCC2,Vbias

= +3V,Pin = -40dBm,T

amb

=25oC

TESTCONDITIONS V

Freq S11 S21 S12 S22

MHz Mag Ang Mag Ang Mag Ang Mag Ang

40 0.614 -23.1 11.023 6.9 0.002 107.6 0.726 -54.4

50 0.590 -27.4 11.248 7.9 0.003 -111.3 0.646 -65.1
100 0.508 -44.6 13.262 4.5 0.004 -47.0 0.366 -97.6
150 0.465 -59.9 15.736 -2.0 0.006 -62.5 0.206 -110.4
200 0.429 -72.0 18.727 -11.5 0.003 97.7 0.130 -104.3
250 0.396 -83.4 21.837 -24.2 0.002 -135.5 0.108 -78.6
300 0.371 -94.7 24.804 -39.3 0.009 154.7 0.136 -56.7
350 0.335 -103.8 26.854 -56.0 0.006 135.2 0.191 -64.3
400 0.295 -109.9 28.077 -73.6 0.003 139.7 0.262 -75.2
450 0.275 -114.8 28.113 -92.5 0.010 97.0 0.321 -85.8
500 0.265 -114.8 26.710 -109.4 0.007 111.8 0.335 -98.2
550 0.282 -117.0 24.831 -125.5 0.007 93.8 0.389 -108.5
600 0.296 -120.3 22.620 -140.8 0.007 110.0 0.393 -121.0
650 0.314 -124.7 20.235 -154.1 0.005 85.1 0.402 -131.7
700 0.321 -131.5 18.081 -166.2 0.010 93.2 0.388 -143.9
750 0.334 -135.8 16.178 -178.0 0.012 106.1 0.390 -153.8
800 0.339 -143.8 14.235 172.5 0.010 74.1 0.377 -162.4
850 0.348 -149.4 12.941 164.1 0.014 57.9 0.392 -170.4
900 0.340 -157.5 11.693 154.9 0.014 80.2 0.402 179.5
950 0.352 -161.0 10.670 145.7 0.006 87.4 0.409 171.4

1000 0.341 -166.8 9.683 137.6 0.016 50.0 0.433 163.3

CC1,VCC2,Vbias

= +4V, Pin = -40dBm, T

amb

=25oC

5/10

TSH691

Figure1 : Typical 300MHz-1000MHzBiasing Circuit

APPLICATIONSINFORMATION

CIRCUIT DESCRIPTION

TheTSH691is50Ωinput/outputinternallymatched
from 300MHz to 1000MHz. Due to its open-collec­tor structure, the output RF port must be tied to
V

. The pin 8 allowsa bias current adjust to set

CC2

the output powerand the gain.The circuit is pack­agedinSO8forthermaldissipationconsiderations.

MATCHING

Withinthe300-1000MHzband,althoughthe circuit
ismatched,theoutputreturnlosscanbe improved
by adding a serial inductor (L2) between the RF
output and V

(56nH @450MHz and 10nH

CC2

@900MHz).Below 300MHz, using the S-parame­ters matrix, specific input/outpu t matching net­works can be calculated to maximize electrical
performances.

DC BLOCKING

Because input/outputare respectivelyinternal/ex­ternal biased, DC blocks (C1, C2) are recom­mended on both RF ports to guarantee a DC
isolationfromthenextcells.Above500MHz,100pF
issuggested whereasbelow, 1nFis betterand far
below(less than 100MHz), 10nF is prefered.

power(AB classAmplifier) by tuning a seriesvari­able resistor (Rbias).
When Vbias is wired to the V

rail, the current

CC

consumptionis maximizedgettingthe best linearity
(AclassAmplifier)whereasbiasingto Ground,the
IC is set in power down mode.
For higher supply voltage than 4V to reach high
output power, the serial resistor (R1) is strongly
recommended to increase the efficiency of the
amplifierand thereforereducethe thermaldissipa­tionof the circuit.

DECOUPLING

As with any RFdevices,the supply voltagedecou­pling must be done carefully using a 1nF bypass
capacitor (C3, C5) placed as close as possible to
the device pins and could be also improved by
adding a 150nH RF choke inductance (L1). Con­cerningtheVbiaspin,a10nFdecouplingcapacitor
(C4)is recommendedwhile placingonboardisnot
critical.Note thatSurfaceMountedDevices(SMD)
componentsare prefered for RF applicationsdue
to the right behaviourin highfrequencieswhile low
inductor values (few 10nH) can be printed on
board.

BIASING

The amplifier can operate in the range of 1,5V to
5Vand offersa bias current adjust function (Vbias
pin) which enables the trimming of the RF output

6/10

TSH691

GAIN vs FREQUENCY(450MHz)

30

25

20

Gain(dB)

15

L2 =10nH (450MHz Operation)

Vcc=Vbias=3V

10

100 200 300 400 500 600 700 800 900 1000

Freq (MHz)

INPUT RETURN LOSS (450MHz)

0

-5

-35°C
+25°C

V

+85°C

GAIN vs FREQUENCY(900MHz)

30

25

20

Gain(dB)

15

L2 =10nH (900MHz Operation)

Vcc=Vbias=3V

10

100 200 300 400 500 600 700 800 900 1000

Freq(MHz)

INPUTRETURN LOSS (900MHz)

0

-5

-35°C
+25°C

V

+85°C

2V

3V

S11(dB)

-10

-15

-20

Vcc=Vbias @ Ta=+25°C

L2=56nH (450MHz operation)

-25
100 200 300 400 500 600 700 800 900 1000

Freq(MHz)

OUTPUT RETURN LOSS (450MHz)

0

-5
3V

-10

S21(dB)

-15

-20

-25
100 200 300 400 500 600 700 800 900 1000

2V

Vcc=Vbias @ Ta=+25°C

L2=56nH (450MHz operation)

Freq(MHz)

-10

S11 (dB)

-15

4V

-20

Vcc=Vbias @ Ta=+25°C

2V

3V

4V

L2 =10nH (900MHz operation)

-25
100 200 300 400 500 600 700 800 900 1000

Freq (MHz)

OUTPUT RETURNLOSS (900MHz)

0

-5

-10

4V

S22 (dB)

-15

-20

Vcc=Vbias @ Ta=+25°C

L2=10nH (900MHz operation)

-25
100 200 300 400 500 600 700 800 900 1000

Freq (MHz)

3V

2V

4V

7/10

TSH691

REVERSE ISOLATIONvs FREQUENCY

0

-10

-20

-30

S12 (dB)

-40

-50

L2=10nH

L2=56nH

Vcc=Vbias=3V

Ta=+25°C

-60
100 200 300 400 500 600 700 800 900 1000

Freq(MHz)

ADMISSION(900MHz)

20

15

+85°C

10

Pout (dBm)

-35°C

5

0

-20 -15 -10 -5 0

+25°C

Vcc=Vbias=3V

L2 =10nH (900MHz operation)

Pin (dBm)

1dB COMPRESSIONvs BIAS VOLTAGE

20

15

Vcc = 3V

10

P1dB(dBm)

5

0

1,5 2 2,5 3 3,5 4

Vcc= 2V

L2=10nH (900MHz operation)

Vbias(V)

Ta=25°C

SUPPLYCURRENT vs BIASVOLTAGE

60

Icctotal

40

Icctotal (mA)

20

Vcc=3V,Ta=+25°C

Pin= -40dBm

0

0 0,5 1 1,5 2 2,5 3

Vbias(V)

I bias

Vcc = 4V

6

4

I bias(mA)

2

0

8/10

DEMONSTRATION BOARD : Diagram for 300MHz - 1000MHz operation

DEMONSTRATION BOARD : Silk Screen

TSH691

DEMONSTRATION BOARD : Printed Circuit Board (availableon request)

9/10

TSH691

PACKAGEMECHANICAL DATA

8 PINS- PLASTICMICROPACKAGE(SO)

Dim.

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020
c1 45

o

(typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.150 0.157

L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8

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consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronicsproducts arenotauthorized foruse ascritical components in lifesupport devicesorsystems
without express written approval of STMicroelectronics.

 The ST logo is a trademark of STMicroelectronics

o

(max.)

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SO16.TBL

10/10

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