Datasheet TSH690 Datasheet (SGS Thomson Microelectronics)



.

1.5V to 5VOPERATINGVOLTAGE

.

28dB GAIN @ 3V @ 450MHz

.

20dB GAIN @ 3V @ 900MHz

.

+13.5dBmOUTPUTPOWER(P1dB)

.

BIASPIN FOR CURRENT ADJUST&
AMPLIFIERDISABLE

.

ADJUSTABLEOUTPUTPOWER

.

50Ω INPUT/OUTPUTMATCHING

.

FULLYGUARANTEEDAT2.7V

DESCRIPTION

TSH690 is a wide band RF amplifier, consistedof
2 stages, designed in advanced bipolar process
featuring 28dB gain and +13.5dBm output power
at 450MHzunder 3V. The pin 8 allowsan external
bias current adjust to tune the output power and
also to set the amplifier in power-down mode. This
powerfulamplifierisdedicatedtoequipsecuredRF
data transmitters as antennadrivers in ISM band
(reliable RF meter-readingsystems, secured Re­mote Controls, Cordless Telephones,...)

TSH690

40MHz to 1GHz AMPLIFIER

D

SO8

(Plastic Micropackage)

ORDER CODES

Part Number Temperature Range

o

TSH690ID -40, +85

C •

Package

D

PIN CONNECTIONS (top view)

RF out

September 1998

GND

GND
GND

1

2

3

4

8

7

6

5

Vbias

V

CC

GND

RF in

1/10

TSH690

SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUMRATINGS

Symbol Parameter Value Unit

V

CC1,VCC2,Vbias

RF in RF Input Power +10 dBm

RF out RF Output Power +21 dBm

T

oper

T

stg

Supply Voltages & Bias Voltage 5.5 V

Operating Free Air Temperature Range -40 to +85
Storage Temperature Range -65 to +150

OPERATINGCONDITIONS

Symbol Parameter Value Unit

V

CC1,VCC2

V

bias

RF

sr

Supply Voltages 1.5 to 5 V
Bias Voltage 0 to 6 V
RF SignalRange 40 to 1000 MHz

ESD SENSITIVEDEVICE

Handling Precautions Required

o

C

o

C

2/10

ELECTRICAL CHARACTERISTICS

=25oC, VCC&V

T

amb

=+2.7V, ZL=50Ω

bias

TSH690

Parameter

SupplyCurrent 40 46 mA
S21 (V
S21 (Vin= -20dBm, f = 900MHz) 17 dB
Output Power 1dB Compression (f = 450MHz) 8 12 dBm
3rd Order Intercept Point (f = 430MHz) 16 22 dBm
S12 (Reverse Isolation @ f = 400MHz) -46 dB
S11 (Input Return Loss @f = 450MHz) -10 -15 dB
S11 (Input Return Loss @f = 900MHz) -10 dB
Noise Figure @ f = 450MHz 4.5 dB
Noise Figure @ f = 900MHz 5.4 dB
R

All parameters withmin. or max. figures are 100% tested.

= -20dBm, f = 450MHz) 20 23 30 dB

in

Junction Ambient ThermalResistance For SO8 Package 140 180

th(j-a)

Min. Typ. Max.

TSH690

o

SO8 PACKAGE THERMALRESISTIVITY

Tamb (°C)

150
135
120
105

90
75
60
45
30

DEVICE

OVERSTRESSED

RIGHT BEHAVIOUR

Rthmin

Rthmax

Unit

C/W

123456

DEFINITION

R

th(j-a)

(oC) Maximum Die JunctionTemperature

T

j

T

amb

P

(W) Maximum Dissipated Power

d

JunctionAmbient ThermalResistance

o

(~ 150

C)

(oC) Ambient Temperature

(P

= 0.75 VCC• ICC)

d

Vcc (V)

REMARKS

The rightbehaviour is obtained when the follow­ing equation is fulfilled.

T

j-Tamb=Pd•Rth(j-a)

3/10

TSH690

TYPICALSCATTERINGPARAMETERS (Reference wavesplanes at package leads)

TEST CONDITIONS V

Freq S11 S21 S12 S22

MHz Mag Ang Mag Ang Mag Ang Mag Ang

40 0.642 -22.0 6.319 5.0 0.003 -126.5 0.715 -54.7

50 0.615 -25.7 6.406 7.1 0.008 170.7 0.631 -64.7
100 0.537 -41.3 7.643 7.7 0.002 70.1 0.369 -91.3
150 0.490 -55.6 9.353 3.1 0.004 -141.9 0.253 -100.9
200 0.464 -68.0 11.502 -5.7 0.007 -117.3 0.202 -100.9
250 0.428 -79.0 13.856 -18.0 0.003 162.3 0.203 -92.7
300 0.413 -92.1 16.229 -33.4 0.005 142.1 0.209 -87.6
350 0.373 -101.5 18.019 -51.2 0.008 101.4 0.263 -89.4
400 0.334 -106.7 19.110 -70.1 0.008 115.2 0.326 -99.7
450 0.312 -111.5 19.159 -90.3 0.008 169.9 0.382 -112.1
500 0.290 -112.5 18.154 -108.0 0.008 111.5 0.395 -122.9
550 0.302 -114.5 16.778 -124.8 0.010 92.1 0.425 -130.0
600 0.324 -118.2 15.075 -140.5 0.015 93.6 0.424 -139.6
650 0.335 -122.9 13.482 -153.6 0.011 109.6 0.427 -150.8
700 0.349 -129.6 11.992 -165.5 0.011 101.7 0.425 -159.0
750 0.368 -135.0 10.750 -177.2 0.019 82.4 0.414 -169.5
800 0.366 -142.1 9.453 173.4 0.011 79.5 0.413 -177.8
850 0.373 -147.9 8.598 165.0 0.015 60.2 0.432 176.2
900 0.374 -154.1 7.783 155.8 0.013 89.7 0.438 166.4
950 0.381 -159.0 7.117 146.7 0.017 111.3 0.447 160.8

1000 0.377 -165.8 6.500 138.9 0.013 82.2 0.462 155.1

CC1,VCC2,Vbias

= +2V,Pin = -40dBm,T

amb

=25oC

4/10

TSH690

TEST CONDITIONS V

Freq S11 S21 S12 S22

MHz Mag Ang Mag Ang Mag Ang Mag Ang

40 0.616 -23.3 9.237 6.2 0.002 -135.8 0.733 -56.9

50 0.595 -27.0 9.402 7.9 0.005 -169.5 0.651 -67.7
100 0.513 -43.4 11.263 6.5 0.006 -153.8 0.381 -101.7
150 0.470 -57.7 13.566 0.9 0.006 94.5 0.227 -119.1
200 0.436 -71.1 16.434 -8.6 0.007 155.8 0.156 -117.5
250 0.402 -82.2 19.416 -21.3 0.007 154.1 0.134 -100.3
300 0.382 -95.0 22.265 -36.6 0.005 7.2 0.135 -75.7
350 0.343 -103.3 24.337 -53.7 0.008 40.6 0.193 -78.0
400 0.302 -109.7 25.564 -71.8 0.010 125.9 0.269 -86.1
450 0.279 -114.8 25.594 -91.2 0.008 167.1 0.316 -100.6
500 0.271 -114.0 24.292 -108.3 0.011 120.2 0.356 -111.0
550 0.280 -116.1 22.527 -124.7 0.013 101.0 0.396 -119.3
600 0.306 -119.8 20.511 -140.1 0.005 89.9 0.404 -131.3
650 0.315 -125.5 18.282 -153.2 0.006 107.2 0.400 -142.6
700 0.330 -131.1 16.311 -165.1 0.007 78.9 0.406 -151.6
750 0.333 -136.2 14.604 -177.1 0.012 84.5 0.398 -160.4
800 0.343 -142.5 12.860 173.6 0.017 76.0 0.399 -170.5
850 0.346 -148.0 11.668 165.1 0.014 90.8 0.411 -178.8
900 0.354 -155.1 10.579 156.0 0.018 75.6 0.413 170.9
950 0.347 -159.6 9.652 147.0 0.013 66.6 0.439 165.2

1000 0.355 -166.2 8.775 139.2 0.018 75.3 0.459 157.3

CC1,VCC2,Vbias

= +3V,Pin = -40dBm,T

amb

=25oC

TESTCONDITIONS V

Freq S11 S21 S12 S22
MHz Mag Ang Mag Ang Mag Ang Mag Ang

40 0.614 -23.1 11.023 6.9 0.002 107.6 0.726 -54.4

50 0.590 -27.4 11.248 7.9 0.003 -111.3 0.646 -65.1
100 0.508 -44.6 13.262 4.5 0.004 -47.0 0.366 -97.6
150 0.465 -59.9 15.736 -2.0 0.006 -62.5 0.206 -110.4
200 0.429 -72.0 18.727 -11.5 0.003 97.7 0.130 -104.3
250 0.396 -83.4 21.837 -24.2 0.002 -135.5 0.108 -78.6
300 0.371 -94.7 24.804 -39.3 0.009 154.7 0.136 -56.7
350 0.335 -103.8 26.854 -56.0 0.006 135.2 0.191 -64.3
400 0.295 -109.9 28.077 -73.6 0.003 139.7 0.262 -75.2
450 0.275 -114.8 28.113 -92.5 0.010 97.0 0.321 -85.8
500 0.265 -114.8 26.710 -109.4 0.007 111.8 0.335 -98.2
550 0.282 -117.0 24.831 -125.5 0.007 93.8 0.389 -108.5
600 0.296 -120.3 22.620 -140.8 0.007 110.0 0.393 -121.0
650 0.314 -124.7 20.235 -154.1 0.005 85.1 0.402 -131.7
700 0.321 -131.5 18.081 -166.2 0.010 93.2 0.388 -143.9
750 0.334 -135.8 16.178 -178.0 0.012 106.1 0.390 -153.8
800 0.339 -143.8 14.235 172.5 0.010 74.1 0.377 -162.4
850 0.348 -149.4 12.941 164.1 0.014 57.9 0.392 -170.4
900 0.340 -157.5 11.693 154.9 0.014 80.2 0.402 179.5
950 0.352 -161.0 10.670 145.7 0.006 87.4 0.409 171.4

1000 0.341 -166.8 9.683 137.6 0.016 50.0 0.433 163.3

CC1,VCC2,Vbias

= +4V, Pin= -40dBm, T

amb

=25oC

5/10

TSH690

Figure1 : Typical 300MHz-1000MHzBiasingCircuit

APPLICATIONSINFORMATION

CIRCUIT DESCRIPTION

TheTSH690is50Ω input/outputinternallymatched
from 300MHz to 1000MHz.Due to its open-collec­tor structure, the output RF port must be tied to
Vcc2. The pin 8 allows a bias currentadjust to set
the output power and the gain.The circuit is pack­agedinSO8forthermaldissipationconsiderations.

MATCHING

Withinthe300-1000MHzband, althoughthecircuit
ismatched,the outputreturn losscan be improved
by adding a serial inductor (L2) between the RF
output and V

(56nH @ 450MHz and 10nH @

CC2

900MHz).Below300MHz, usingthe S-parameters
matrix, specific input/output matching networks
can be calculated to maximize electrical perform­ances.

DC BLOCKING

Because input/output are respectivelyinternal/ex­ternal biased, DC blocks (C1, C2) are recom­mended on both RF ports to guarantee a DC
isolationfromthenextcells.Above500MHz,100pF
issuggested whereasbelow, 1nF is better and far
below(less than 100MHz),10nF is prefered.

BIASING

The amplifier can operate in the range of 1.5V to
5Vand offersa bias current adjust function

(Vbiaspin) whichenables the trimming of theRF
output power(AB class Amplifier) by tuning a se­riesvariableresistor (Rbias).

WhenVbiasis wired to the Vcc rail, the current
consumptionis maximized getting the best linear­ity (A class Amplifier) whereasbiasingto
Ground,the IC is setin powerdownmode.

For highersupply voltage than 4V to reach high
output power, the serial resistor (R1) is strongly
recommendedto increasethe efficiency of the
amplifierand thereforereduce the thermaldissi­pationof the circuit.

DECOUPLING

As withany RFdevices, the supplyvoltagedecou­pling must be done carefully using a 1nF bypass
capacitor (C3, C5) placed as close as possible to
the device pins and could be also improved by
adding a 150nH RF choke inductance (L1). Con­cerningthe Vbiaspin, a 10nFdecouplingcapacitor
(C4)is recommendedwhileplacingon boardis not
critical.Note thatSurfaceMounted Devices(SMD)
componentsare prefered for RF applicationsdue
to theright behaviourin highfrequencieswhile low
inductor values (few 10nH) can be printed on
board.

6/10

TSH690

GAIN vs FREQUENCY(450MHz)

30

25

20

Gain(dB)

15

L2 =10nH(450MHz Operation)

Vcc=Vbias=3V

10

100 200 300 400 500 600 700 800 900 1000

Freq (MHz)

INPUT RETURN LOSS (450MHz)

0

-5

-40°C
+25°C

V

+85°C

GAIN vs FREQUENCY(900MHz)

30

25

20

Gain(dB)

15

L2 =10nH (900MHz Operation)

Vcc=Vbias=3V

10

100 200 300 400 500 600 700 800 900 1000

Freq(MHz)

INPUTRETURN LOSS (900MHz)

0

-5

-40°C
+25°C

V

+85°C

2V

3V

S11(dB)

-10

-15

-20

Vcc=Vbias @ Ta=+25°C

L2=56nH (450MHz operation)

-25
100 200 300 400 500 600 700 800 900 1000

Freq(MHz)

OUTPUT RETURN LOSS (450MHz)

0

-5
3V

-10

S22(dB)

-15

-20

-25
100 200 300 400 500 600 700 800 900 1000

2V

Vcc=Vbias @ Ta=+25°C

L2=56nH (450MHz operation)

Freq(MHz)

-10

S11 (dB)

-15

4V

-20

Vcc=Vbias @ Ta=+25°C

2V

3V

4V

L2 =10nH(900MHz operation)

-25
100 200 300 400 500 600 700 800 900 1000

Freq (MHz)

OUTPUT RETURN LOSS (900MHz)

0

-5

-10

4V

S22 (dB)

-15

-20

Vcc=Vbias @ Ta=+25°C

L2=10nH (900MHz operation)

-25
100 200 300 400 500 600 700 800 900 1000

Freq (MHz)

3V

2V

4V

7/10

TSH690

REVERSE ISOLATIONvs FREQUENCY

0

-10

-20

-30

S12 (dB)

-40

-50

L2=10nH

L2=56nH

Vcc=Vbias=3V

Ta=+25°C

-60
100 200 300 400 500 600 700 800 900 1000

Freq(MHz)

ADMISSION(900MHz)

20

15

+85°C

10

Pout (dBm)

-40°C

5

0

-20 -15 -10 -5 0

+25°C

Vcc=Vbias=3V

L2 =10nH (900MHz operation)

Pin (dBm)

1dB COMPRESSIONvs BIAS VOLTAGE

20

15

Vcc = 3V

10

P1dB(dBm)

5

0

1,5 2 2,5 3 3,5 4

Vcc= 2V

L2=10nH (900MHz operation)

Vbias(V)

Ta=25°C

SUPPLYCURRENT vs BIASVOLTAGE

60

Icctotal

40

Icctotal (mA)

20

Vcc=3V,Ta=+25°C

Pin= -40dBm

0

0 0,5 1 1,5 2 2,5 3

Vbias(V)

I bias

Vcc = 4V

6

4

I bias(mA)

2

0

8/10

DEMONSTRATION BOARD : Diagram for 300MHz - 1000MHz operation

DEMONSTRATION BOARD : Silk Screen

TSH690

DEMONSTRATION BOARD : Printed Circuit Board (available on request)

9/10

TSH690

PACKAGEMECHANICALDATA

8 PINS- PLASTICMICROPACKAGE(SO)

Dim.

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.25 0.5 0.010 0.020
c1 45

o

(typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.150 0.157

L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8

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o

(max.)

10/10

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