Datasheet tsa5518m DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TSA5518M

1.3 GHz bidirectional I
controlled synthesizer

Product specification
File under Integrated Circuits, IC02

2

C-bus

1997 Mar 07

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

FEATURES

• Complete 1.3 GHz single chip system

• Low power 5 V, 40 mA

• I2C-bus programming

• One pin crystal oscillator

• In-lock flag

• Varicap drive disable

• Low radiation

• Address selection for picture in picture (PIP), DBS tuner,

and so on

• 5-level A/D converter

• 7 bus-controlled ports (4 open-collector outputs and

3 emitter follower outputs), 1 bidirectional port

• Power-down flag

• Mixer/oscillator bandswitch output

• Available in SSOP20 package.

APPLICATIONS

• TV tuners and front-ends

• VCR tuners.

TSA5518M

GENERAL DESCRIPTION

The device is a single chip PLL frequency synthesizer
designed for TV tuning systems. Control data is entered
via the I
the device, select the oscillator frequency, program the
7 output ports and set the charge-pump current.
The output port P6 is combined with an A/D converter
input. Digital information concerning this port can be read
out of the SDA line (one status byte) during a READ
operation. A flag is set when the loop is ‘in-lock’ and is read
during a READ operation. The device has one fixed

2

I
voltage on AS input. The phase comparator operates at

7.8125 kHz when a 4 MHz crystal in used. The device
provides a bandswitch output to select the bands of the
mixer/oscillator ICs TDA5330, TDA5630A except
TDA5630/C1 and TDA5730 with the appropriate voltage
level.

2

C-bus; five serial bytes are required to address

C-bus address, programmed by applying a specific

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
I

CC

f

i

V

CC

i(rms)

supply voltage 4.5 5 5.5 V
supply current − 40 − mA
frequency 80 − 1300 MHz
input voltage level (RMS value) 80 to 150 MHz 12 − 300 mV

150 MHz to 1.0 GHz 9 − 300 mV

1 GHz to 1.3 GHz 40 − 300 mV
f
I

xtal
o

crystal oscillator frequency 3.2 4 4.48 MHz
output current emitter follower on P4, P5 and P7 −−5mA

open-collector P0, P1 and P2 −−20 mA

open-collector P6 −−10 mA
T
R

amb

th j-a

operating ambient temperature −10 − +80 °C
thermal resistance from

−−120 K/W

junction to ambient

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TSA5518M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1

1997 Mar 07 2

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

BLOCK DIAGRAM

output

PD

UD

1

20

PUMP

CHARGE

TO OP

LOGIC

OS

VCCGND

9

17

BS
5

BAND

SWITCH

TSA5518M

MGK115

PHASE

DIGITAL

COMPARATOR

DIV

f

15-BIT

DIVIDER

PROGRAMABLE

DIVIDE-BY-8

PRESCALER

8

7

ref

f

7.8125 kHz

N = 512

DIVIDER

4 MHz

OSCILLATOR
19

IN-LOCK

DETECTOR

15-BIT LATCH

DIVIDER RATIO

DETECTOR

POWER-DOWN

16

LATCH &

CONTROL DATA

C-BUS

2

I

TRANSCEIVER

15

8-BIT LATCH

PORT INFORMATION

T1

GATE

8-BIT A/D

CONVERTER

ADDRESS

SELECTION

handbook, full pagewidth

Fig.1 Block diagram.

1112 10 14 13 4 3 2

P0AS P1 P2 P6 P4 P5 P7

RF1

RF2

XTAL

input

1997 Mar 07 3

SCL

SDA

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

PINNING

SYMBOL PIN DESCRIPTION

UD 1 drive output (UD)
P7 2 P7 output port
P5 3 P5 output port
P4 4 P4 output port
BS 5 bandswitch output for M/O drive
n.c 6 not connected
RF2 7 UHF/VHF signal input 2
RF1 8 UHF/VHF signal input 1
GND 9 ground
P1 10 P1 output port (general purpose)
P0 11 P0 output port (general purpose)
AS 12 input for Address Selection
P6 13 P6 port (output/input for general

purpose ADC)

P2 14 P2 output port (f

is active)

2

SDA 15 I
SCL 16 I
V

CC

17 voltage supply

C-bus serial data input/output

2

C-bus serial clock

n.c 18 not connected
XTAL 19 crystal oscillator input
PD 20 charge-pump output (PD)

if the test mode

DIV

handbook, halfpage

TSA5518M

1

UD PD

2

P7 XTAL

3

P5 n.c.

4

P4

BS

5

P1

TSA5518M

6
7
8
9

10

n.c. SDA
RF2
RF1

GND

Fig.2 Pin configuration.

20
19
18
17
16
15
14
13
12
11

MBH947

V

CC

SCL

P2
P6
AS
P0

FUNCTIONAL DESCRIPTION

The device is controlled via the two wire I2C-bus.
For programming, there is one module address (7 bits)
and the R/W bit for selecting READ or WRITE mode.

Write mode

The write data format is summarized in Table 1. After the
address transmission (first byte), data bytes can be sent to
the device. Four data bytes are needed to fully program
the device. The bus transceiver has an auto increment
facility which permits the programming of the device within
one single transmission (address byte + 4 data bytes).
The device can also be partially programmed on the
condition that the first data byte following the address is
byte 2 or 4. The meaning of the bits in the data bytes is
given in Table 3. The first bit of the first data byte
transmitted indicates whether frequency data (first bit = 0)

1997 Mar 07 4

or charge pump and port information (first bit = 1) will
follow. Until an I

2

C-bus STOP condition is sent by the
controller, additional data bytes can be entered without the
need to re-address the device. This allows a smooth
frequency sweep for fine tuning or AFC purpose. At
power-on the ports are set to the high-impedance state
(open-collector outputs) or at the HIGH level (emitter
follower outputs). The bandswitch output BS provides a
voltage output suitable for the band selection input of
mixer/oscillator ICs TDA5330, TDA5630A and TDA5730.
It is controlled by B1 and B0 bits or P7, P5 and P4 bits
depending on the BSC bit (see Tables 1 to 4). The

7.8125 kHz reference frequency is obtained by dividing
the output of the 4 MHz crystal oscillator by 512. Because
the input of UHF/VHF signal is first divided-by-8 the step
size is 62.5 kHz. A 3.2 MHz crystal can offer step size of
50 kHz.

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
TSA5518M

synthesizer

Table 1 Write data format

BYTE DESCRIPTION

1 address 11000 MA1MA00 LOW from device
2 programmable divider 0 N14 N13 N12 N11 N10 N9 N8 LOW from device
3 programmable divider N7 N6 N5 N4 N3 N2 N1 N0 LOW from device
4 charge-pump, bandswitch and test bits 1 CP T1 T0 BSC B1 B0 OS LOW from device
5 output ports control bits P7 P6 P5 P4 X P2 P1 P0 LOW from device

Table 2 Explanation of Table 1

BIT DESCRIPTION

MA1, MA0 programmable address bits (see Table 7)
N14, .. , N0 programmable divider bits

14

N = N14 × 2

CP charge pump current

CP=0to50µA; CP=1to220µA

T1, T0, OS T1 = 0, T0 = 0, OS = 0: normal operation

T1 = 1: P2 = f
T0 = 1: 3-state charge pump
OS = 1: operational amplifier output is switched off (varicap drive disable)

BSC bandswitch control bit

BSC = 0: bandswitch output is controlled by B1 and B0 bits according to Table 3

BSC = 1: bandswitch output is controlled by P7, P5 and P4 bits according to Table 4
B1, B0 bandswitch control bits
P6, P2, P1 and P0 P6, P2 .. P0 = 1: open-collector outputs are active

P6, P2 .. P0 = 0: outputs are in high impedance state
P4, P5 and P7 P4, P5 and P7 = 1: outputs are at low level

P4, P5 and P7 = 0: emitter follower outputs are active
X don’t care

+ N13 × 213+...+ N1 × 21+N0

, P6 = f

DIV

MS

ref

B

LSB ACKNOWLEDGE

Table 3 BS output control (BSC = 0)

B1 B0 VOLTAGE ON PIN BS

0 0 0.25 V
01 2V
10 4V
11 V

1997 Mar 07 5

CC

Table 4 BS output control (BSC = 1)

P7 P5 P4 VOLTAGE ON PIN BS

1 1 0 0.25 V
101 2V
011 4V

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
TSA5518M

synthesizer

Read mode

The read data format is summarised in Table 5. Data can
be read out of the device by setting the R/W bit to logic 1.
After the slave address has been recognized, the device
generates an acknowledge pulse and the status word is
transferred on the SDA line (MSB first). Data is valid on the
SDA line during a HIGH of the SCL clock signal. A second
data byte can be read out of the device if the processor
generates an acknowledge on the SDA line. End of
transmission will occur if no acknowledge from the
processor occurs.The device will then release the data line
to allow the processor to generate a STOP condition.
When the port P6 is used as input, it must be programmed

Table 5 Read data format

BYTE DESCRIPTION MSB LSB ACKNOWLEDGE

1 address 11000MA1
2, .. status byte(s) POR

(2)

FL

(3)

000A2

in its high-impedance state. The POR flag (Power-on
reset) is set to logic 1 when V

goes below 3 V and at

CC

power-on. It is reset when an end of data is detected by the
device (end of a READ sequence). Control of the loop is
made possible with the in-lock flag FL which indicates
(FL = 1) when the loop is phase-locked. A built-in % level
A/D converter is available on I/O port P6. This converter
can be used to feed AFC information to the controller from
the IF section of the television as illustrated in the typical
application circuit in Fig.2. The relationship between bit
A2, A1 and A0 and the input voltage on port P6 is given in
Table 6.

(1)

(4)

MA0

A1

(4)

(1)

1 LOW from device

(4)

A0

note 5

Notes

1. See Table 7.

2. POR: Power-on reset flag. (POR = 1 on power-on).

3. FL: in lock flag (FL = 1 when the loop is phase-locked).

4. A2, A1, A0: digital outputs of the 5 level A/D converter (see Table 6). Accuracy is

1

⁄2LSB. MSB is transmitted first.

5. Upon an acknowledge pulse from the controller, the device transfers the status byte again. If no acknowledge pulse
from the controller is received, data read is terminated.

Table 6 A/D converter levels
Accuracy on the switching levels is ±0.02V

CC

.

VOLTAGE APPLIED ON PIN P6 A2 A1 A0

0.6V

0.45V

0.3V

0.15V

to 5.5 V 1 0 0

CC

to 0.6V

CC

to 0.45V

CC

to 0.3V

CC

0 to 0.15V

CC
CC
CC

CC

011
010
001
000

Address selection

The module address contains programmable address bits
(MA1 and MA0) which offer the possibility of having
several synthesizers (up to 3) in one system by applying a
specific voltage on AS input. The relationship between
MA1 and MA0 and the input voltage on AS input is given
in Table 7.

Frequency lock flag (FL) definition

When the FL flag is logic 1, the maximum frequency

Table 7 Address selection

VOLTAGE APPLIED ON PIN AS MA1 MA0

0 to 0.1V

CC

00

always valid 0 1

0.4 to 0.6V

CC

to V

0.9V

CC

CC

10
11

deviation dF from stable frequency can be expressed as:

K

VCO

± I

df

K

= oscillator slope (Hz/V)

VCO

I

= charge pump current (A)

CP

K

=4×10

O

------------­K

O

×

6

CP

C1 C2+

×=

--------------------­C1 C2×

with:

C1, C2 = loop filter capacitors.

1997 Mar 07 6

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
TSA5518M

synthesizer

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC

V

i(XTAL)

V

i(SCL)

V

SDA

V

i(AS)

V

o(BS)

V

i(RF)

V

o

V

PD

V

UD

I

SDA

I

o

T

stg

T

j(max)

t

sc(GND)(max)

t

sc(VCC)(max)

supply voltage −0.3 +6 V
voltage at pin XTAL −0.3 +V

CC

V
voltage at pin SCL −0.3 +6 V
voltage at pin SDA −0.3 +6 V
voltage at pin AS −0.3 +V
voltage at pin BS −0.3 +V
voltage at pins RF1 and RF2 −0.3 +V
output voltage at ports P0, P2

−0.3 +16 V

CC
CC
CC

V

V

V

and P6
output voltage at ports P4, P5

−0.3 +V

CC

V
and P7

output voltage at pin PD −0.3 +V
output voltage at pin UD −0.3 +V

CC
CC

V

V
output current at pin SDA open collector −1+5mA
output current at pins P0, P1

−1 +20 mA

and P2
output current at pins P4, P5

emitter follower −1 +10 mA

and P7
output current at pin P6 open collector −1 +10 mA
storage temperature −40 +150 °C
maximum junction temperature − 150 °C
maximum short circuit time to

GND
maximum short circuit time to

V

CC

one pin to GND (VCC= 5.5 V;

− 10 s

GND = 0 V)
one pin to VCC(VCC= 5.5 V; GND = 0 V) − 10 s

HANDLING

Every pin withstands the ESD test in accordance with MIL-STD-833C category B (2000 V).
Every pin withstands the ESD test in accordance with Philips Semiconductor machine model 0 Ω, 200 pF.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air 120 K/W

1997 Mar 07 7

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
TSA5518M

synthesizer

CHARACTERISTICS

V

= 4.5 to 5.5 V; T

CC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Operating characteristics

V
T
f

CC

amb

i

supply voltage 4.5 − 5.5 V
operating ambient temperature −10 − +80 °C

input frequency 80 − 1300 MHz
N divider note 1 256 − 32767
I

CC

supply current 25 40 50 mA

Crystal oscillator

f

osc

Z

i(XTAL)

V

o(XTAL)

V

i(RF)

oscillator frequency 3.2 4 4.48 MHz

input impedance on pin XTAL −−−450 Ω

output drive level on pin XTAL − 40 − mV

input level see Fig.3 12 − 300 mV

flatness of the minimum sensitivity 150 − 1000 MHz

prescaler input impedance see Fig.4

= −10 to +80 °C; unless otherwise specified.

amb

= 80 to 150 MHz 9 − 300 mV

f

i

= 150 to 1000 MHz 40 − 300 mV

f

i

= 1000 to 1300 MHz −−10 mV

f

i

Output port P0, P1 and P2 (open collector); note 1
I

LO

I

o(sink)

V

OL

C

L(max)

output leakage current VPn= 13.5 V −−10 µA

output sink current note 2 −−20 mA

LOW-level output voltage IPn=15mA −−0.5 V

maximum capacitive loading on output

pin

Output ports P4, P5 and P7 (emitter follower)

V

OH

I

OH

HIGH-level output voltage I

HIGH-level output current − 35mA

Output port P6 (open collector)

I

LO

I

o(sink)

V

OL

C

L(max)

output leakage current VP6= 13.5 V − 110µA

output sink current note 2 −−10 mA

LOW-level output voltage IP6=5mA −−0.4 V

maximum capacitive loading on output

pin

Input port AS

I

IH

I

IL

HIGH-level input current V

HIGH-level input current V

Input port P6

I

IH

I

IL

HIGH-level input current V

LOW-level input current V

VPn= 5.5 V −−100 nF

=3mA VCC− 1 −−V

port

VP6= 5.5 V −−100 nF

ASH=VCC

=0V −10 −− µA

ASL

= 5.5 V −−10 µA

P6H

=0V −10 −−µA

P6L

−−10 µA

1997 Mar 07 8

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
TSA5518M

synthesizer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Bandswitch output BS

V

O(BSA)

V

O(BSB)

output voltage for band A I
output voltage for band B I

source(BSA)
source(BSB)

note 3

V

O(BSC)

output voltage for band C I

source(BSC)

note 3

2

C-bus inputs SCL, SDA; note 4

I

V

IH

V

IL

hys
I

IH

I

IL

i

HIGH-level input voltage 3 − 5.5 V
LOW-level input voltage −−1.5 V
input hysteresis VCC=5V − 250 − mV
HIGH-level input current VBH= 5.5 V; VCC=0V −−10 µA

V

BH

LOW-level input current VBL=0V; VCC=0V −10 −− µA

V

BL

Output SDA (open collector)

I

LO

V

O

output leakage current V
output voltage I

SDAH=VCC

SDAL

Charge-pump output PD

I

OH(cp)

 HIGH level output charge pump

CP = 1 140 220 300 µA

current

 LOW level output charge pump

I

OL(cp)

CP = 0 25 50 75 µA

current

V

O

I

LZ

output voltage in-lock 1.5 − 2.5 V
OFF-state leakage current T0 = 1 −5 − +5 nA

Operational amplifier output UD (test mode: T0 = 1)

V

o(off)

V

o(loop)

output voltage when switched-off OS = 1; IUD=1mA −−200 mV
output voltage when the loop is closed OS = 0; T0 = 0 −−1.2 V

Notes

1. If the dividing number N is set to less than 256, a dividing number of 256 is used.

2. When a port is active, the collector voltage may not exceed 6 V.

3. Measured with all other ports active at max. current (10 mA or 20 mA respectively).

4. See

“The I2C-bus and how to use it”

, order no. 9398 393 40011.

=20µA − 0.25 0.5 V
=20µA;

=20µA;

0.36
V

CC

0.7
V

CC

0.4
V

0.8
V

CC

CC

0.43
V

CC

0.9
V

CC

V

V

= 5.5 V; VCC= 5.5 V −−10 µA

=0V; VCC= 5.5 V −10 −−µA

−−10 µA

=3mA −−0.4 V

1997 Mar 07 9

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled

synthesizer

3

10

handbook, halfpage

V

i(rms)

(mV)

2

10

guaranteed operating area

10

1

f (MHz)

TSA5518M

MGK117

15000 500 1000

Fig.3 I/O prescaler typical input sensitivity curve: VCC= 4.5 to 5.5 V; T

handbook, full pagewidth

= −10 to +80 °C.

amb

1

0.5

0.2

j

+

0

− j

0.2

0.2 0.5 1 2 5 10

1.3 GHz
1 GHz

0.5

1

2

100 MHz

500 MHz

2

5

10

∞

50 MHz

10

5

MGK118

Fig.4 Prescaler Smith-chart of typical input impedance: VCC= 5 V; reference value 50 Ω.

1997 Mar 07 10

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

INTERNAL PIN CONFIGURATION

PIN CONFIGURATION

1 and 20

V

CC

DOWN

V

CC

UP

20

V

CC

1

PIN CONFIGURATION

7 and 8

V

7

V

8

CC

CC

to divider

10, 11, 13
and 14

10, 11, 13, 14

TSA5518M

V

CC

V

MGK121

V

CC

ref

2, 3 and 4

5

MGK127

V

CC

V

2, 3, 4

V

CC

CC

MGK119

V

CC

12

V

CC

12

15

5

15

MGK122

MGK120

V

CC

V

CC

MGK124

MGK123

1997 Mar 07 11

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

PIN CONFIGURATION

16

V

CC

16

MGK125

PIN CONFIGURATION

19

V

CC

19

TSA5518M

V

CC

MGK126

1997 Mar 07 12

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

APPLICATION INFORMATION

handbook, full pagewidth

33 V

HIGH

MID

LOW

BS

RF2
RF1

22 kΩ

filter dependent

BC847

4.7nF4.7nF4.7nF4.7

35 kΩ

1 nF
1 nF

nF

UD

P7
P5
P4

BS

n.c.
RF2
RF1

GND

P1

22 kΩ

TSA5518M

10

201
192
183
174
165
156
147
138
129
11

15 nF

PD
XTAL
n.c.

V

CC
SCL
SDA
P2
P8
P3
P0

100 nF

4 MHz

300 Ω
300 Ω

1 kΩ
1 kΩ

10 pF

4.7
nF

390 Ω

390 Ω 390 Ω

4.7
nF

TSA5518M

4.7
nF

4.7
nF

MGK116

5 V

SCL
SDA
P2
ADC
AS
P0

P1

V

tune

Fig.5 Typical application.

Loop filter
Table 8 Loop filter

DESCRIPTION MIN. MAX. UNIT

Time span between actual

1024 1152 µs

phase lock and FL flag setting
Time span between the loop

0 128 µs

losing lock and FL flag resetting

K

= 16 MHz/V (UHF band)

VCO

ICP= 220 µA
C1 = 100 nF, C2 = 15 nF
df = ±67.5 kHz

handbook, halfpage

C1

C2

R

MBH948

Fig.6 Loop filter.

1997 Mar 07 13

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

PACKAGE OUTLINE

SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm

20

D

c

y

Z

11

E

H

TSA5518M

SOT266-1

A

X

v M

E

A

pin 1 index

110

w M

b

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

1.5

0.1501.4

1.2

A

0.25

b

3

p

0.32

0.20

2

UNIT A1A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

p

cD

0.20

6.6

0.13

6.4

0 2.5 5 mm

scale

(1)E(1)

eHELLpQZywv θ

4.5

0.65 1.0 0.2

4.3

6.6

6.2

Q

A

2

A

1

detail X

0.65

0.75

0.45

0.45

(A )

L

p

L

A

3

θ

0.13 0.1

0.48

0.18

(1)

o

10

o

0

OUTLINE
VERSION

SOT266-1

IEC JEDEC EIAJ

REFERENCES

1997 Mar 07 14

EUROPEAN

PROJECTION

ISSUE DATE

90-04-05
95-02-25

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
synthesizer

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

Reflow soldering

Reflow soldering techniques are suitable for all SSOP
packages.

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

Wave soldering

Wave soldering isnot recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

(order code 9398 652 90011).

TSA5518M

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1997 Mar 07 15

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled
TSA5518M

synthesizer

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

PURCHASE OF PHILIPS I

Purchase of Philips I
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.

2

C COMPONENTS

2

C components conveys a license under the Philips’ I2C patent to use the

1997 Mar 07 16

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled

synthesizer

NOTES

TSA5518M

1997 Mar 07 17

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled

synthesizer

NOTES

TSA5518M

1997 Mar 07 18

Philips Semiconductors Product specification

1.3 GHz bidirectional I2C-bus controlled

synthesizer

NOTES

TSA5518M

1997 Mar 07 19

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

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Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 547047/1200/01/pp20 Date of release: 1997 Mar 07 Document order number: 9397 750 01612