Datasheet TS271M, TS271ID, TS271IN, TS271I, TS271CN Datasheet (SGS Thomson Microelectronics)

...
TS271C,I,M
PROGRAMMABLE CMOS
SINGLE OPERATIONAL AMPLIFIERS
October 1997
.
OFFSET NULL CAPABILITY (by external compensation)
.
SET
.
CONSUMPTION CURRENT AND DYNAMIC PARAMETERS ARE STABLE REGARDING THE VOLTAGEPOWER SUPPLY VARIATIONS
.
OUTPUT VOLTAGE CAN SWING TO GROUND
.
VERYLARGE I
SET
RANGE
.
STABLEAND LOW OFFSETVOLTAGE
.
THREE INPUT OFFSETVOLTAGE SELECTIONS
DESCRIPTION
The TS271is a low cost, lowpowersingle opera­tional amplifierdesigned to operate with single or
1
2
3
45
6
7
8
CC
+
-
-
+
1 - Offset Null 1 2 - InvertingInput 3 - Non-invertingInput 4-V 5 - Offset Null 2 6 - Output 7-V 8-I
CC
SET
PIN CONNECTIONS (top view)
ORDER CODES
Part Number
Temperature
Range
Package
ND
TS271C/AC/BC 0
o
C, +70oC ●● TS271I/AI/BI -40oC, +125oC ●● TS271M/AM/BM -55oC, +125oC ●●
Example : TS271ACN
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
dual supplies. This operational amplifier uses the SGS-THOMSONsilicon gate CMOS process giv­ing it an excellent consumption-speedratio. This amplifier is ideallysuited for low consumption applications.
The powersupply is externallyprogrammablewith a resistorconnectedbetweenpins8and4.Itallows to choose the best consumption-speedratio and supply current can be minimizedaccording to the required speed. This device is specified for the followingI
SET
currentvalues: 1.5µA, 25µA,130µA.
This CMOS amplifieroffers very high input imped­ance and extremelylow input currents.The major advantage versus JFET devices is the very low input currents drift withtemperature(see figure 3).
1/15
MAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
+
Supply Voltage - (note 1) 18 V
V
id
Differential Input Voltage- (note 2) ±18 V
V
i
Input Voltage - (note 3) -0.3 to 18 V
I
O
Output Current for V
CC
+
15V ±30 mA
I
in
Input Current ±5mA
T
oper
Operating Free-Air TemperatureRange
TS271C/AC/BC TS271I/AI/BI TS271M/AM/BM
0to+70
-40 to +125
-55 to +125
o
C
T
stg
Storage TemperatureRange -65 to +150
o
C
Notes : 1. All voltage values, except differential voltage, are with respect to network ground terminal.
2. Differential voltages are thenon-inverting input terminal with respect to the invertinginput terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
Iset Input Input
Offset null
E E
Input
differential
Second
stage
Output
stage
Output
CC
V
CC
V
BLOCK DIAGRAM
OPERATINGCONDITIONS
Symbol Parameter Value Unit
V
CC
+
Supply Voltage 3 to 16 V
V
icm
Common Mode Input Voltage Range 0 to V
CC
+
- 1.5 V
TS271C,I,M
2/15
T26
T27
V
CC
V
CC
T28
Input -
T1
T2 Input +
Set Current
T29
T3 T4
C1
R1
T7
T6T5
T8
T11
T12
T10
T13
T9
T14
T16
Output
C2
T15
Offset Null 1
Offset Null 2
SCHEMATIC DIAGRAM
TS271C,I,M
3/15
25k
V
CC
5
1
8
R
set
OFFSETCOMPENSATION GUARANTEED FOR TS271BCX (I
SET
>25µA),TS271ACX (I
SET
>90µA)
OFFSET VOLTAGENULL CIRCUIT
= +3V = +5V
V
CC
V
CC
= +10V = +16V
V
CC
V
CC
R
set
10k
100k
1M
10M
1
µA 10µA 100µA
I
set
0.1µA
Figure 1 : R
SET
Connectedto V
CC
-
.
V
CC
R
set
V
O
V
CC
V
CC
R
set
V
O
V
CC
R
SET
CONNECTED TO
GROUND
R
SET
CONNECTED TO
V
CC
-
(R
SET
VALUE : SEE
Fig.1)
RESISTOR BIASING
TS271C,I,M
4/15
ELECTRICAL CHARACTERISTICS FOR I
SET
= 1.5µA
V
CC
+
= +10V,V
CC
-
=0V, T
amb
=25oC (unless otherwisespecified)
Symbol Parameter
TS271C/AC/BC
TS271I/AI/BI
TS271M/AM/BM
Unit
Min. Typ. Max. Min. Typ. Max.
V
io
Input Offset Voltage
V
O
= 1.4V,Vic= 0V TS271C/I/M
TS271AC/AI/AM TS271BC/BI/BM
T
min.
T
amb
T
max.
TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM
1.1
0.9
0.25
10
5 2
12
6.5 3
1.1
0.9
0.25
10
5 2
12
6.5
3.5
mV
DV
io
Input Offset VoltageDrift 0.7 0.7 µV/oC
I
io
Input Offset Current - (note 1)
V
ic
=5V,Vo=5V
T
min
. T
amb
T
max
.
1
100
1
200
pA
I
ib
Input Bias Current - (note 1)
V
ic
=5V,Vo=5V
T
min
. T
amb
T
max
.
1
150
1
300
pA
V
OH
High Level Output Voltage
V
id
= 100mV,RL=1M
T
min
. T
amb
T
max
.
8.8
8.7
9 8.8
8.6
9
V
V
OL
Low Level Output Voltage (Vid= -100mV) 50 50 mV
A
vd
Large Signal VoltageGain
V
o
=1Vto6V,RL=1MΩ,Vic=5V
T
min
. T
amb
T
max
.
30 20
100 30
20
100
V/mV
GBP Gain Bandwidth Product (A
v
= 40dB,
R
L
=1MΩ,CL= 100pF,fin= 10kHz) 0.1 0.1
MHz
CMR Common Mode Rejection Ratio
V
o
= 1.4V,Vic= 1V to 7.4V 60 80 60 80
dB
SVR Supply Voltage Rejection Ratio
V
CC
+
= 5V to 10V ,Vo= 1.4V 60 80 60 80
dB
I
CC
Supply Current
A
v
= 1, no load, Vo=5V
T
min
. T
amb
T
max.
10 15
17
10 15
18
µA
I
o
Output Short Circuit Current
V
id
= 100mV, Vo=0V 60 60
mA
I
sink
Output Sink Current
V
id
= -100mV, Vo=V
CC
45 45
mA
SR Slew-Rate at Unity Gain
R
L
=1MΩ,CL= 100pF, Vi= 3 to7V 0.04 0.04
V/µs
m Phase Margin at Unity Gain
A
v
= 40dB, RL=1M
C
L
= 10pF
C
L
= 100pF
35 10
35 10
Degrees
K
ov
Overshoot Factor
C
L
= 10pF
C
L
= 100pF
40 70
40 70
%
e
n
Equivalent Input Noise Voltage
f = 1kHz, R
S
= 100 68 68
nV
Hz
Note : 1. Maximum values including unavoidable inaccuracies of theindustrial test.
TS271C,I,M
5/15
TYPICALCHARACTERISTICS FOR I
SET
= 1.5µA
CC
SUPPLYVOLTAGE,V (V)
CC
SUPPLY CURRENT,I (µA)
T=25°C A=1 V=V /2
amb
V
OCC
0481216
20
15
10
5
Figure 2 : SupplyCurrent versus Supply
Voltage
25 50 75 100 125
INPUTBIASCURRENT,I (pA)
IB
100
10
1
CC
V = 10V V=5V
ic
amb
TEMPERATURE,T (°C)
Figure3 : Input Bias Current versusFree Air
Temperature
5
4
3
2
1
0
-10 -8 -6 -4 -2 0
amb id
T=25°C V = 100mV
V=5V
CC
OUTPUTVOLTAGE,V (V)
OH
OH
OUTPUT CURRENT, I (mA)
CC
V=3V
Figure 4a : HighLevel Output Voltage versus
High Level OutputCurrent
20
16
12
8
4
0
-50 -40 -30 -20 -10 0
amb
id
T=25°C V = 100mV
V = 16V
CC
OUTPUT CURRENT, I (mA)
OH
OH
OUTPUTVOLTAGE,V (V)
CC
V = 10V
Figure4b : High Level Output Voltage versus
High Level OutputCurrent
1.0
0.8
0.6
0.4
0.2
amb
ic
id
T=25°C V = 0.5V V = -100mV
V=3V
V=5V
CC
CC
OL
OUTPUTVOLTAGE,V (V)
0 123
OUTPUT CURRENT,I (mA)
OL
Figure 5a : Low Level Output Voltageversus
Low Level Output Current
3
2
1
0 4 8121620
CC
V = 10V
CC
V = 16V
OUTPUTVOLTAGE,V (V)
OL
amb
id
ic
T=25°C V = 0.5V V = -100mV
OUTPUT CURRENT, I (mA)
OL
Figure5b : Low Level Output Voltage versus
Low Level Output Current
TS271C,I,M
6/15
TYPICALCHARACTERISTICS FOR I
SET
= 1.5µA(continued)
50 40 30 20 10
0
-10
GAIN(dB)
PHASE(Degrees)
0 45 90 135 180
FREQUENCY,f (Hz)
2
10
amb
CC
+
L L
VCL
Gain Bandwidth Product
Phase Margin
PHASE
GAIN
T=25°C V = 10V R=1M
C = 100pF A = 100
6
10
5
10
4
10
3
10
Figure 6 : OpenLoop FrequencyResponse
and Phase Shift
SUPPLY VOLTAGE, V (V)
CC
04 81216
120
100
80
60
40
T=25°C R=1M
C = 100pF A=1
amb
L L V
GAIN BANDW.PROD., GBP (kHz)
Figure7 : Gain Bandwidth Product versus
Supply voltage
SUPPLY VOLTAGE, V (V)
CC
amb
L
V
PHASEMARGIN, m (Degrees)
φ
10
8
6
4
2
0 481216
T=25°C R=1M C = 100pF A=1
L
Figure 8 : PhaseMargin versus SupplyVoltage
PHASEMARGIN, m (Degrees)
φ
40
30
20
10
20 40 60 80 1000
T=25°C R=1M
A=1 V = 10V
amb
L
V
CC
CAPACITANCE,C (pF)
L
Figure9 : Phase Marginversus Capacitive
Load
46810121416
SUPPLY VOLTAGE, V (V)
CC
SLEW RATES,SR (V/µs)
SR
SR
0.07
0.06
0.05
0.04
0.03
0.02
0.01
T=25°C R=1M
C = 100pF
amb
L L
Figure 10 : SlewRates versus Supply Voltage
TS271C,I,M
7/15
ELECTRICAL CHARACTERISTICS FOR I
SET
=25µA
V
CC
+
= +10V,V
CC
-
=0V, T
amb
=25oC (unless otherwisespecified)
Symbol Parameter
TS271C/AC/BC
TS271I/AI/BI
TS271M/AM/BM
Unit
Min. Typ. Max. Min. Typ. Max.
V
io
Input Offset Voltage
V
O
= 1.4V,Vic= 0V TS271C/I/M
TS271AC/AI/AM TS271BC/BI/BM
T
min
. T
amb
T
max.
TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM
1.1
0.9
0.25
10
5 2
12
6.5 3
1.1
0.9
0.25
10
5 2
12
6.5
3.5
mV
DV
io
Input Offset VoltageDrift 2 2 µV/oC
I
io
Input Offset Current - (note 1)
V
ic
=5V,Vo=5V
T
min
. T
amb
T
max.
1
100
1
200
pA
I
ib
Input Bias Current - (note 1)
V
ic
=5V,Vo=5V
T
min
. T
amb
T
max.
1
150
1
300
pA
V
OH
High Level Output Voltage
V
id
= 100mV,RL= 100k
T
min
. T
amb
T
max.
8.7
8.6
8.9 8.7
8.5
8.9
V
V
OL
Low Level Output Voltage (Vid= -100mV) 50 50 mV
A
vd
Large Signal VoltageGain
V
o
=1Vto6V,RL= 100k,Vic=5V
T
min
. T
amb
T
max.
30 20
50 30
10
50
V/mV
GBP Gain Bandwidth Product (A
v
= 40dB,
R
L
= 100k,CL= 100pF, fin= 100kHz) 0.7 0.7
MHz
CMR Common Mode Rejection Ratio
V
o
= 1.4V,Vic= 1V to 7.4V 60 80 60 80
dB
SVR Supply Voltage Rejection Ratio
V
CC
+
= 5V to 10V ,Vo= 1.4V 60 80 60 80
dB
I
CC
Supply Current
A
v
= 1, no load, Vo=5V
T
min
. T
amb
T
max.
150 200
250
150 200
300
µA
I
o
Output Short Circuit Current
V
id
= 100mV, Vo=0V 60 60
mA
I
sink
Output Sink Current
V
id
= -100mV, Vo=V
CC
45 45
mA
SR Slew-Rate at Unity Gain
R
L
= 100k,CL= 100pF, Vi= 3 to 7V 0.6
0.6
V/µs
m Phase Margin at Unity Gain
Av= 40dB, RL= 100k
C
L
= 10pF
C
L
= 100pF
50 30
50 30
degrees
K
ov
Overshoot Factor
C
L
= 10pF
C
L
= 100pF
30 50
30 50
%
e
n
Equivalent Input Noise Voltage
f = 1kHz, R
S
= 100 38 38
nV
Hz
Note : 1. Maximum values including unavoidable inaccuracies of theindustrial test.
TS271C,I,M
8/15
CC
SUPPLYCURRENT,I (µA)
T=25°C A=1 V=V /2
amb
V
OCC
200
150
100
50
0481216
CC
SUPPLYVOLTAGE, V (V)
Figure 11 : SupplyCurrent versus Supply
Voltage
25 50 75 100 125
INPUTBIASCURRENT,I (pA)
IB
100
10
1
CC
V = 10V V=5V
ic
amb
TEMPERATURE,T (°C)
Figure12 : InputBias Current versusFree Air
Temperature
5
4
3
2
1
0
-10 -8 -6 -4 -2 0
amb id
T=25°C V = 100mV
V=5V
CC
OUTPUTVOLTAGE,V (V)
OH
OH
OUTPUT CURRENT, I (mA)
CC
V=3V
Figure 13a : High Level Output Voltageversus
High Level OutputCurrent
20
16
12
8
4
0
-50 -40 -30 -20 -10 0
amb
id
T=25°C V = 100mV
V = 16V
CC
OUTPUT CURRENT, I (mA)
OH
OH
OUTPUTVOLTAGE,V (V)
CC
V = 10V
Figure13b : High LevelOutput Voltage versus
High Level OutputCurrent
1.0
0.8
0.6
0.4
0.2
amb
ic
id
T=25°C V = 0.5V V = -100mV
V=3V
V=5V
CC
CC
OL
OUTPUTVOLTAGE,V (V)
0 123
OUTPUT CURRENT,I (mA)
OL
Figure 14a : Low Level Output Voltage versus
Low Level Output Current
3
2
1
0 4 8121620
CC
V = 10V
CC
V = 16V
OUTPUTVOLTAGE,V (V)
OL
amb
id
ic
T=25°C V = 0.5V V = -100mV
OUTPUT CURRENT, I (mA)
OL
Figure14b : Low LevelOutput Voltageversus
Low Level Output Current
TYPICALCHARACTERISTICS FOR I
SET
=25µATYPICALCHARACTERISTICS FOR I
SET
=25µATYPICALCHARACTERISTICS FOR I
SET
=25µATYPICALCHARACTERISTICS FOR I
SET
=25µA
TS271C,I,M
9/15
50 40 30 20 10
0
-10
GAIN(dB)
PHASE(Degrees)
0 45 90 135 180
FREQUENCY,f (Hz)
T=25°C V = 10V R = 100k Ω C = 100pF A = 100
amb
CC
L
L
VCL
PHASE
GAIN
Phase Margin
Gain Bandwidth Product
+
2
10
6
10
5
10
4
10
3
10
7
10
Figure 15 : OpenLoop FrequencyResponse
and Phase Shift
SUPPLY VOLTAGE, V (V)
CC
0481216
T=25°C R =100k C =100pF A=1
amb
L
L
V
GAIN BANDW.PROD.,GBP (kHz)
0.4
0.5
0.6
0.7
0.8
0.8
Figure16 : GainBandwidth Productversus
Supply voltage
SUPPLY VOLTAGE, V (V)
CC
amb
L
V
PHASEMARGIN, m (Degrees)
φ
50
40
30
20
10
0 481216
T=25°C R = 100k C = 100pF A=1
L
Figure 17 : PhaseMargin versus SupplyVoltage
CAPACITANCE,C (pF)
L
PHASEMARGIN, m (Degrees)
φ
50
40
30
20
20 40 60 80 1000
T=25°C R = 100k
A=1 V = 10V
amb
L
V
CC
Figure18 : PhaseMargin versus Capacitive
Load
4 6 8 10121416
SUPPLY VOLTAGE, V (V)
CC
SLEWRATES,SR (V/µs)
SR
SR
1.0
0.8
0.6
0.4
0.2
0
amb
L
T=25°C R = 100k C = 100pF
L
Figure 19 : SlewRates versus Supply Voltage
TYPICALCHARACTERISTICS FOR I
SET
=25µA(continued)
TS271C,I,M
10/15
ELECTRICAL CHARACTERISTICS FOR I
SET
= 130µA
V
CC
+
= +10V,V
CC
-
=0V, T
amb
=25oC (unless otherwisespecified)
Symbol Parameter
TS271C/AC/BC
TS271I/AI/BI
TS271M/AM/BM
Unit
Min. Typ. Max. Min. Typ. Max.
V
io
Input Offset Voltage
V
O
= 1.4V,Vic= 0V TS271C/I/M
TS271AC/AI/AM TS271BC/BI/BM
T
min
. T
amb
T
max.
TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM
1.1
0.9
0.25
10
5 2
12
6.5 3
1.1
0.9
0.25
10
5 2
12
6.5
3.5
mV
DV
io
Input Offset VoltageDrift 2 2 µV/oC
I
io
Input Offset Current - (note 1)
V
ic
=5V,Vo=5V
T
min
. T
amb
T
max.
1
100
1
200
pA
I
ib
Input Bias Current - (note 1)
V
ic
=5V,Vo=5V
T
min
. T
amb
T
max.
1
150
1
300
pA
V
OH
High Level Output Voltage
V
id
= 100mV,RL= 10k
T
min
. T
amb
T
max.
8.2
8.1
8.4 8.2 8
8.4
V
V
OL
Low Level Output Voltage (Vid= -100mV) 50 50 mV
A
vd
Large Signal VoltageGain
V
o
=1Vto6V,RL= 10k,Vic=5V
T
min
. T
amb
T
max.
10
7
15 10
6
15
V/mV
GBP Gain Bandwidth Product (A
v
= 40dB,
R
L
= 10k,CL= 100pF,fin= 100kHz) 2.3 2.3
MHz
CMR Common Mode Rejection Ratio
V
o
= 1.4V,Vic= 1V to 7.4V 60 80 60 80
dB
SVR Supply Voltage Rejection Ratio
V
CC
+
= 5V to 10V ,Vo= 1.4V 60 70 60 70
dB
I
CC
Supply Current
A
v
= 1, no load, Vo=5V
T
min
. T
amb
T
max.
800 1300
1400
800 1300
1500
µA
I
o
Output Short Circuit Current
V
id
= 100mV, Vo=0V 60 60
mA
I
sink
Output Sink Current
V
id
= -100mV, Vo=V
CC
45 45
mA
SR Slew-Rate at Unity Gain
R
L
= 10k,CL= 100pF,Vi= 3 to 7V 4.5 4.5
V/µs
m Phase Margin at Unity Gain
A
v
= 40dB, RL= 10k
C
L
= 10pF
C
L
= 100pF
65 50
65 50
degrees
K
ov
Overshoot Factor
C
L
= 10pF
C
L
= 100pF
30 30
30 30
%
e
n
Equivalent Input Noise Voltage
f = 1kHz, R
S
= 100 30 30
nV
Hz
Note : 1. Maximum values including unavoidable inaccuracies of theindustrial test.
TS271C,I,M
11/15
CC
SUPPLY VOLTAGE,V (V)
0 481216
1.0
0.8
0.6
0.4
0.2
T=25°C A=1 V=V /2
amb
V
OCC
CC
SUPPLYCURRENT,I (mA)
Figure 20 : SupplyCurrent (each amplifier)ver-
sus SupplyVoltage
25 50 75 100 125
INPUTBIASCURRENT,I (pA)
IB
100
10
1
CC
V = 10V V=5V
ic
amb
TEMPERATURE,T (°C)
Figure21 : InputBias Current versusFree Air
Temperature
5
4
3
2
1
0
-10 -8 -6 -4 -2 0
amb id
T=25°C V = 100mV
V=5V
CC
OUTPUTVOLTAGE,V (V)
OH
OH
OUTPUT CURRENT, I (mA)
CC
V=3V
Figure 22a : High Level Output Voltageversus
High Level OutputCurrent
20
16
12
8
4
0
-50 -40 -30 -20 -10 0
amb
id
T=25°C V = 100mV
V = 16V
CC
OUTPUT CURRENT, I (mA)
OH
OH
OUTPUTVOLTAGE,V (V)
CC
V = 10V
Figure22b : High LevelOutput Voltage versus
High Level OutputCurrent
1.0
0.8
0.6
0.4
0.2
amb
ic
id
T=25°C V = 0.5V V = -100mV
V=3V
V=5V
CC
CC
OL
OUTPUTVOLTAGE,V (V)
0 123
OUTPUT CURRENT,I (mA)
OL
Figure 23a : Low Level Output Voltage versus
Low Level Output Current
3
2
1
0 4 8121620
CC
V = 10V
CC
V = 16V
OUTPUTVOLTAGE,V (V)
OL
amb
id
ic
T=25°C V = 0.5V V = -100mV
OUTPUT CURRENT, I (mA)
OL
Figure23b : Low LevelOutput Voltageversus
Low Level Output Current
TYPICALCHARACTERISTICS FOR I
SET
= 130µA
TS271C,I,M
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50 40 30 20 10
0
-10
GAIN(dB)
PHASE(Degrees)
0 45 90 135 180
FREQUENCY,f (Hz)
T=25°C V = 10V R = 10k Ω C = 100pF A = 100
amb
CC
L
L
VCL
PHASE
GAIN
Phase Margin
Gain Bandwidth Product
+
2
10
6
10
5
10
4
10
3
10
7
10
Figure 24 : OpenLoop FrequencyResponse and
PhaseShift
SUPPLY VOLTAGE, V (V)
CC
0481216
T=25°C R = 10k C =100pF A=1
amb
L
L V
GAIN BANDW.PROD.,GBP (kHz)
1
2
3
4
5
Figure25 : GainBandwidth Productversus
Supply voltage
SUPPLY VOLTAGE, V (V)
CC
amb
L
V
PHASEMARGIN, m (Degrees)
φ
50
40
30
20
10
0481216
T=25°C R = 10k
C = 100pF A=1
L
Figure 26 : PhaseMargin versus SupplyVoltage
CAPACITANCE,C (pF)
L
PHASEMARGIN, m (Degrees)
φ
70
60
50
40
20 40
60 80 1000
T=25°C R = 10k
A=1 V = 10V
amb
L
V
CC
30
Figure27 : PhaseMargin versus CapacitiveLoad
46 810121416
SUPPLY VOLTAGE, V (V)
CC
SLEWRATES,SR (V/µs)
SR
SR
5
4
3
2
1
0
amb
L
T=25°C R = 10k C = 100pF
L
Figure 28 : SlewRates versus Supply Voltage
TYPICALCHARACTERISTICS FOR I
SET
= 130µA (continued)
TS271C,I,M
13/15
PM-DIP8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTICDIP
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430 E 7.95 9.75 0.313 0.384
e 2.54 0.100 e3 7.62 0.300 e4 7.62 0.300
F 6.6 0260
i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
271-07.TBL
TS271C,I,M
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PM-SO8.EPS
PACKAGE MECHANICAL DATA
8 PINS - PLASTICMICROPACKAGE(SO)
Dimensions
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069 a1 0.1 0.25 0.004 0.010 a2 1.65 0.065 a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020 c1 45
o
(typ.) D 4.8 5.0 0.189 0.197 E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8
o
(max.)
SO8.TBL
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor forany infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwiseunder anypatent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics – Printed in Italy – AllRights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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ORDERCODE :
TS271C,I,M
15/15
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