Page 1
TPP25011
ApplicationSpecific Discretes
A.S.D.
FEATURES
UNIDIRECTIONALFUNCTION
PROGRAMMABLEBREAKDOWNVOLTAGE
UP TO 250 V
PROGRAMMABLECURRENT LIMITATION
FROM40 mA TO500 mA
SURGECURRENT CAPABILITY
I
=30A 10/1000µs
PP
DESCRIPTION
Dedicated to sensitive telecom equipment
protection, this device can provide both voltage
and current triggered protection with a very tight
tolerance.
Thebreakdownvoltagecan beeasilyprogrammed
byusingan externalzener diode.
A multiple protectionmode can be also performed
when using several zener diodes, providing to
eachline interfacean optimizedprotectionlevel.
The current limiting function is achieved with the
useof a resistorbetweenthegate andthecathode.
Thevalue of the resistorwill determine thelevel of
thedesiredcurrent.
OVERVOLTAGE and OVERCURRENT
PROTECTION for TELECOM LINE
SO8
SCHEMATIC DIAGRAM
COMPLIESWITHTHEFOLLOWINGSTANDARDS:
CCITTK17 :
VDE0433:
CNET : 0.5/700 µs 1.5 kV
FCCpart68 : 2/10 µs 2.5 kV
BELLCORE
TR-NWT-000974:
(*)with seriesresistors or PTC.
TM: ASD is trademarks of SGS-THOMSON Microelectronics.
February 1998- Ed: 4
10/700 µs 1.5 kV
5/310 µs38A
10/700 µs2kV
5/310 µs 40 A (*)
0.2/310 µs38A
2/10 µs 75 A (*)
10/1000 µs1kV
10/1000 µs 30 A (*)
1/7
Page 2
TPP25011
ABSOLUTE MAXIMUMRATINGS(T
amb
=25°C)
Symbol Parameter Value Unit
I
PP
I
TSM
T
T
Note 1 :
Peakpulse current (seenote 1) 10/1000µs
Nonrepetitivesurge peak on-statecurrent
(F= 50Hz)
Storagetemperaturerange
stg
Maximumjunction temperature
j
Pulse waveform:
10/1000µstr=10µst
5/310µst
2/10µst
=5µst
r
=2µst
r
=1000µs
p
=310µs
p
=10µs
p
5/310µs
2/10µs
tp= 10ms
t=1s
%I
PP
100
50
0
30
40
75
5
3.5
- 55 to + 150
°C
150
t
t
r
p
t
A
A
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-a)
Junctionto ambient
170 °C/W
2/7
Page 3
ELECTRICAL CHARACTERISTICS
Symbol Parameter
(T
amb
TPP25011
=25°C)
V
RM
I
RM
V
BR
V
BO
I
H
I
BO
I
PP
V
GN
I
G
Stand-offvoltage
Leakagecurrent at stand-offvoltage
Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Peakpulse current
Gatevoltage
Gatetriggeringcurrent
C Capacitance
1 - OPERATIONWITHOUTGATE
Type IRM@V
max. min. max. min.
µA V V mA V mA mA mA pF
RM
VBR@I
R
VBO@I
note1
BO
max. min.
I
H
note 2
note3
TPP25011 6 60 250 1 340 15 200 180 100
C
max.
2 - OPERATIONWITH GATE
I
Type V
@IGN=30mA
GN
G
min. max. min. max.
note4 V
V
VmAmA
A-C
= 100V
TPP25011 1.05 1.35 5 40
Note 1:
Note 2
Note 3:
See thereference test circuit 1.
: See test circuit 2.
V
= 5V,F = 1MHz
R
3/7
Page 4
TPP25011
REFERENCETESTCIRCUIT 1 :
Auto
Transformer
220V/2A
220V
Transformer
220V/800V
5A
TESTPROCEDURE:
PulseTestduration (tp = 20ms):
- For Bidirectionaldevices= SwitchK isclosed
- For Unidirectionaldevices= SwitchK is open.
V
Selection
OUT
- Device with V
-V
- Devicewith V
-V
BO
OUT
OUT
< 200 Volt
= 250 V
≥ 200 Volt
BO
= 480 V
V
out
RMS,R1
RMS,R2
static
relay.
= 140 Ω.
=240 Ω.
= 20ms
tp
K
I
BO
measure
R1
140
R2
240
D.U.T
V
BO
measure
FUNCTIONALHOLDING CURRENT(I
) TEST CIRCUIT2 = GO - NOGOTEST
H
R
D.U.T.
V
= - 48 V
BAT
This is a GO-NOGOTest which allows to confirmthe holding current (I
test circuit.
TESTPROCEDURE:
1) Adjustthe currentlevelat the I
2) Fire the D.U.T with a surge Current: Ipp = 10A , 10/1000µs.
3) The D.U.Twill comebackoff-statewithin50 ms max.
value byshort circuitingthe AKof the D.U.T.
H
Surge generator
) level in a functional
H
-V
P
4/7
Page 5
APPLICATIONCIRCUIT
Overvoltageprotectionand currentlimitation
TPP250
Tablebelowgivesthe toleranceof thelimitedcurrent IT for each standardizedresistorvalue.
TPP25011
CURRENT TOLERANCE
R
Ω
( ± 5%)
3.00
3.30
3.60
3.90
4.30
4.70
5.10
5.60
6.20
6.80
7.50
8.20
9.10
10.10
11.00
12.00
13.00
15.00
16.00
18.00
20.00
22.00
24.00
27.00
30.00
I
T
mA
min
338
308
283
261
238
218
201
184
166
152
138
127
115
104
96
88
82
72
68
61
55
50
47
42
38
I
T
mA
max
514
471
435
404
370
342
319
294
269
249
229
213
196
181
169
158
149
135
129
119
111
105
99
93
87
-+
Line
LOAD
5/7
Page 6
TPP25011
Telephoneset protection
PROTECTIONMODES:
OFFHOOK= Ringercircuitprotectionisinsuredwithintrinsicbreakdownvoltageat 250 V
ONHOOK
atdifferentlevelswithzenerdiodes.
=Indialingmode and in conversationmode, thebreakdownvoltageof TPP250canbeadapted
ORDERCODE
TELECOM
PROGRAMMABLE
PROTECTION
BREAKDOWNVOLTAGE
6/7
TPP 250 1 1 RL
PACKAGING:
RL = Tape andreel
=Tube
PACKAGE:
1 =SO8 PLASTIC.
VERSION
Page 7
MARKING
Package Type Marking
SO8 TPP25011 TPP250
PACKAGEMECHANICAL DATA
SO8Plastic
Packaging : Products supplied antistatic tubes or
tapeand reel.
Weight:
0.08g
TPP25011
DIMENSIONS
REF.
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.50 0.020
c1 45°(typ)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8°(max)
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of thirdparties which may result from its use. No
license is grantedby implication orotherwise underany patent or patentrights of SGS-THOMSON Microelectronics.Specifications mentioned
in this publication aresubject to change withoutnotice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized foruse as criticalcomponentsin lifesupport devices orsystems withoutexpress
written approval of SGS-THOMSONMicroelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
Australia- Brazil- Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
7/7
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