Datasheet TPN3021 Datasheet (SGS Thomson Microelectronics)



TPN3021

ApplicationSpecific Discretes

A.S.D.

FEATURES

TRIPLECROWBARPROTECTION
PEAKPULSECURRENT:I
VERYLOW CAPACITANCE:

C = 30 pF
PROTECTS HIGH-SPEED LINE DRIVERS /

RECEIVERS

DESCRIPTION

Dedicated to dataline protection, this device
provides a triple protection function. It ensures
the same protection capability with the same
breakdown voltage both in common mode and
in differential mode.

Witha stand-off voltage of 28Vand a very low ca­pacitance,thisdevice isable to protecthigh-speed
interfacessuchas T1/E1interface.



=30A,10/1000µs

PP

TRIPOLAR OVERVOLTAGE PROTEC-

TION FOR NETWORK INTERFACES

SO8

SCHEMATICDIAGRAM

I/O

1

1

NC

8

COMPLIESWITHTHEFOLLOW INGSTANDAR DS:

NC

NC

2

7

- IEC801-2 15kV (airdischarge)

- IEC801-4 40A (repetitive2.5kHz)

- IEC801-5 1.2/50µs 4kV
8/20µs 100A

ABSOLUTEMAXIMUMRATINGS (T

amb

=25°C)

NC

I/O

3

4

2

GND

6

NC

5

Symbol Parameter Value Unit

I

pp

Peakpulsecurrent 10/1000µs

8/20 µs

T

stg

Tj

T

L

Storagetemperaturerange
Maximumjunctiontemperature

Maximumleadtemperaturefor solderingduring 10s 260 °C

30

150

- 40 to + 150
150

THERMAL RESISTANCE

Symbol Parameter Value Unit

R

th(j-a)

TM: ASD is a trademark of SGS-THOMSON Microelectronics.

February 1998 - Ed : 2

Junctionto ambient 170 °C/W

A
A

°C
°C

1/4

TPN3021

ELECTRICALCHARACTERISTICS

Symbol Parameter

V

RM

V

BO

V

BR

I

H

I

BO

I

RM

I

PP

Stand-offvoltage
Breakovervoltage
Breakdownvoltage
Holdingcurrent
Breakovercurrent
Leakagecurrentat V
Peak pulsecurrent

C Capacitance

αT Temperaturecoefficient

Type I

RM

@V

RM

max.

note1

µAV VmAmApFpF10

(T

RM

amb

=25°C)

V

BO@IBO

max.

I

H

min.

note2

I

I

PP

I

BO

I

H

I

RM

C

typ. max.

note3

V

RM BO

αT

typ.

note 4

-4

V

V

/°C

TPN3021 4 28 38 100 30 25 30 8

Note 1 :

Between any I/Opin and Ground or between I/O1and I/O2.

Note 2 :

See the functional holding current (IH) test circuit.

Note 3 :

Between any I/Opin and GNDor betweenI/O1and I/O2at 0V bias, V

Note 4 :

∆VBO= αTx(T

-25) x VBO(25°C).

amb

=30 mV, F = 1 MHz.

RMS

FUNCTIONAL HOLDINGCURRENT (IH) TEST CIRCUIT : GO-NOGO TEST

R

-V

P

D.U.T

V

BAT

=

-

48 V

Thisis a GO-NOGO test which allowsto confirmthe holding current(IH)levelin a functionaltest circuit.

Surge generator

TESTPROCEDURE :

- Adjust the current level at the I

- Fire the D.U.T.with a surgecurrent : I

valueby short circuitingthe D.U.T.

H

= 10A,10/1000µs.

pp

- The D.U.T.will comeback to theoff-state within a durationof 50ms max.

2/4



TPN3021

APPLICATION CIRCUIT :

R1

1

R12

LINE SIDE

Fig.1 :

Surgepeak current versus overload

R13

R14

T1/E1InterfaceProtection

duration.

I (A)

TSM

8

7
6

5
4

3
2

1
0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

F=50Hz
Tj initial=25°C

TPN3021

TPN3021

R21

R22

R23

R24

+5V

+5V

+5V

LOGIC SIDE

+5V

DA108S1



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TPN3021

ORDERCODE

TPN 30 2 1 RL

TRIPOLAR
PROTECTION
FORNETWORK

NUMERICALCODE

Marking

Type Marking

TPN3021 TPN302

PACKAGE MECHANICAL DATA

SO8(Plastic)

VERSION

PACKAGING:
RL = Tapeand reel

=Tube

PACKAGE:
1 =SO 8 PLASTIC.

DIMENSIONS

REF.

Millimetres Inches

Min. Typ. Max. Min. Typ. Max.

A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.50 0.020
c1 45°(typ)

D 4.8 5.0 0.189 0.197

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.15 0.157

L 0.4 1.27 0.016 0.050

M 0.6 0.024

S8

°

(max)

Packaging=

or tape and reel.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor forany infringementof patents or other rights ofthird parties which may result from its use. No
license is granted by implication or otherwise under any patent or patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorizedforuse ascriticalcomponents in life support devices or systems without express
writtenapproval of SGS-THOMSON Microelectronics.

Australia- Brazil - Canada - China - France - Germany- Italy - Japan - Korea -Malaysia - Malta - Morocco

The Netherlands - Singapore - Spain -Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A.

4/4

Productssupplied in antistatic tubes

 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

SGS-THOMSON MicroelectronicsGROUP OF COMPANIES



Weight=

0.08 g