Page 1
FEATURES
.HIGHCOMMUTATION: > 142A/ms (400Hz)
.INSULATINGVOLTAGE= 2500V
(ULRECOGNIZED: EB81734)
.HIGH VOLTAGECAPABILITY: V
(RMS)
DRM
=1200 V
TPDV 640 ---> 1240
ALTERNISTORS
DESCRIPTION
The TPDV 640 ---> 1240 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge current capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limitingvalues)
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
I2tI
dI/dt Critical rate of rise of on-state current
Tstg
Tj
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C)
2
t value tp = 10 ms 610 A2s
Gate supply : IG= 500mA diG/dt = 1A/µs
Storage and operating junction temperature range - 40 to + 150
Tc = 75 °C40 A
tp = 2.5 ms 590 A
tp = 8.3 ms 370
tp = 10 ms 350
Repetitive
F = 50 Hz
Repetitive
Non
A1
A2
G
(Plastic)
TOP 3
20 A/µs
100
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Symbol Parameter TPDV Unit
640 840 1040 1240
V
DRM
V
RRM
March 1995
Repetitive peak off-state voltage
Tj = 125 °C
600 800 1000 1200 V
260 °C
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Page 2
TPDV 640 ---> 1240
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Contact to ambient 50 °C/W
Rth (j-c) DC Junction to case for DC 1.2 °C/W
Rth (j-c) AC Junction to case for360° conduction angle ( F= 50 Hz) 0.9 °C/W
GATECHARACTERISTICS (maximum values)
P
G (AV)
ELECTRICAL CHARACTERISTICS
=1W PGM= 40W (tp = 20 µs) IGM=8A(tp=20µs) VGM= 16V (tp = 20 µs).
Symbol Test Conditions Quadrant Value Unit
I
GT
V
GT
V
GD
tgt VD=V
I
L
IH*I
VTM*ITM= 60A tp= 380µs Tj=25°C MAX 1.8 V
I
DRM
I
RRM
dV/dt * Linear slope up to VD=67%V
(dI/dt)c * (dV/dt)c = 200V/µs Tj=125°C MIN 35 A/ms
* For either polarity of electrode A2voltage with reference to electrode A1.
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 200 mA
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V
VD=V
DRMRL
DRMIG
dIG/dt = 3A/µs
IG=1.2 I
= 500mA gate open Tj=25°C TYP 50 mA
T
V
DRM
V
RRM
gate open
(dV/dt)c = 10V/µs 142
=3.3kΩ Tj=125°C I-II-III MIN 0.2 V
= 500mA
GT
Rated
Rated
DRM
Tj=25°C I-II-III TYP 2.5 µs
Tj=25°C I-III TYP 100 mA
II 200
Tj=25°C MAX 0.02 mA
Tj=125°C MAX 8
Tj=125°C MIN 500 V/µs
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Page 3
TPDV 640 ---> 1240
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.3 : RMS on-state current versus case temperature.
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
and T
) for different thermal resistances heatsink +
case
amb
contact.
Fig.4 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1.00
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Zth(j-c)
0.10
Zth( j-a)
0.01
tp(s )
1E-3 1E-2 1E-1 1E+0 1 E+1 1E+2 1E+3
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
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Page 4
TPDV 640 ---> 1240
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.9 : Safe operating area.
Fig.8 : On-state characteristics (maximum values).
4/5
Page 5
PACKAGE MECHANICAL DATA
TOP3 Plastic
TPDV 640 ---> 1240
A
R4.6
G
P
N
N
I
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torqur value : 1 m.N.
REF. DIMENSIONS
H
J
Millimeters Inches
Min. Max. Min. Max.
A 15.10 15.50 0.594 0.611
B 20.70 21.10 0.814 0.831
C 14.30 15.60 0.561 0.615
B
D
D 16.10 16.50 0.632 0.650
G 3.40 - 0.133 -
H 4.40 4.60 0.173 0.182
I 4.08 4.17 0.161 0.164
J 1.45 1.55 0.057 0.062
L 0.50 0.70 0.019 0.028
M 2.70 2.90 0.106 0.115
N 5.40 5.65 0.212 0.223
M
L
C
P 1.20 1.40 0.047 0.056
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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