Datasheet TPDV825RG, TPDV1025RG, TPDV1225RG Datasheet (ST)

Features

TPDVxx25

25 A high voltage Triacs

■ On-state current (I

■ Max. blocking voltage (V

■ Gate current (I

■ Commutation @ 10 V/µs: up to 88 A/ms

■ Noise immunity: 2 kV/µs

■ Insulated package:

): 150 mA

GT

T(RMS)

): 25 A

DRM/VRRM

): 1200 V

– 2,500 V rms (UL recognized: E81734).

Description

The TPDVxx25 series use high performance
alternistor technology.

Featuring very high commutation levels and high
surge current capability, these devices are well
adapted to power control for inductive and
resistive loads (motor, transformer...) especially
on three-phase power grid. Targeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).

Table 1. Device summary

A2

G

A1

A1

A2

G

TOP3 insulated

Parameter TPDV825RG TPDV1025RG TPDV1225RG

Blocking voltage V

On-state current I

Gate current I

GT

DRM/VRRM

T(RMS)

800 V 1000 V 1200 V

25 A

150 mA

January 2012 Doc ID 18268 Rev 2 1/7

www.st.com

7

Characteristics TPDVxx25

1 Characteristics

Table 2. Absolute maximum ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

2

I

tI

dI/dt

V

DRM

V

RRM

On-state rms current (180° conduction angle) Tc = 85 °C 25 A

= 2.5 ms

t
Non repetitive surge peak on-state
current

2

t value for fusing tp = 10 ms Tj = 25 °C 265 A

Critical rate of rise of on-state current

= 500 mA, dIG/dt = 1 A/µs

I

G

p

= 25 °C

T

j

= 10 ms 230

t

p

F = 50 Hz 100 A/µs

TPDV825

Repetitive peak off-state voltage

Tj = 125 °C

390

800

TPDV1225 1200

T

stg

T

j

V

INS(RMS)

1. A1, A2, gate terminals to case for 1 minute

Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified)

Storage junction temperature range
Operating junction temperature range

(1)

Insulation rms voltage 2500 V

- 40 to + 150

- 40 to + 125

Atp = 8.3 ms 250

VTPDV1025 1000

°C

2

S

Symbol Test conditions Quadrant Value Unit

I

GT

V

V

t

I

H

I

dV/dt Linear slope up to: V

V

TM

V

to

R

d

I

DRM

I

RRM

(dI/dt)c

VD = 12 V DC, RL = 33 Ω I - II - III

GT

VD = V

GD

VD = V

gt

(1)

IT = 500 mA Gate open TYP. 50 mA

IG = 1.2 x IGT

L

(1)

ITM = 35 A tp = 380 µs MAX. 1.8 V

(1)

Threshold voltage Tj = 125 °C MAX. 1.1 V

(1)

Dynamic resistance Tj = 125 °C MAX. 19 mΩ

V

DRM

(dV/dt)c = 200 V/µs

(1)

RL = 3.3 kΩ T

DRM

= 500 mA dIG/dt = 3 A/µs I - II - III TYP. 2.5 µs

DRM IG

= V

RRM

= 67% V

D

Gate open Tj = 125 °C MIN. 2000 V/µs

DRM

(dV/dt)c = 10 V/µs 88

1. For either polarity of electrode A2 voltage with reference to electrode A1.

= 125 °C I - II - III MIN. 0.2 V

j

I - III

II 200

Tj = 25 °C

T

= 125 °C 8 mA

j

= 125 °C MIN.

T

j

MAX. 150 mA

MAX. 1.5 V

100

TYP.

20 µA

MAX.

20

mA

A/ms

2/7 Doc ID 18268 Rev 2

TPDVxx25 Characteristics

)

Table 4. Gate characteristics (maximum values)

Symbol Parameter Value Unit

P

G(AV)

P

GM

I

GM

V

GM

Table 5. Thermal resistance

Average gate power dissipation 1 W

Peak gate power dissipation tp = 20 µs 40 W

Peak gate current tp = 20 µs 8 A

Peak positive gate voltage tp = 20 µs 16 V

Symbol Parameter Value Unit

R

th(j-a)

R

th(j-c)

R

th(j-c)

Figure 1. Max. rms power dissipation versus

P(W)

40

Junction to ambient 50 °C/W

DC Junction to case for DC 1.5 °C/W

AC Junction to case for 360 °Conduction angle (F = 50 Hz) 1.1 °C/W

Figure 2. Max. rms power dissipation and
on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)

P(W)

40

Rth case to ambient -

max. allowable temperatures
(T

amb

R = 1.5°C/W

th

and T

R = 1°C/W

th

) for various R

case

R = 0.5°C/W

R = 0°C/W

th

th

T (°C

th

case

85

30

α = 120°

20

10

0

α = 30°

0 5 10 15 20 25

α = 60°

α = 90°

I (A)

T(RMS)

α = 180°

180°

α

α

Figure 3. On-state rms current versus case

temperature

I (A)

T(RMS)

30

25

20

15

10

5

0

025 7550 100 125

α = 180°

T (°C)

case

30

20

10

T (°C)

0

0 20 40 60 80 100 120 140

amb

Figure 4. Relative variation of thermal

impedance versus pulse duration

K=[Z /R

th(j-c) th(j-c)

1.00

0.10

0.01

0.0

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

]

Z

th(j-c)

Z

th(j-a)

t (s)

p

95

105

115

125

Doc ID 18268 Rev 2 3/7

Characteristics TPDVxx25

Figure 5. Relative variation of gate trigger

current and holding current versus
junction temperature

I,I,I[T] /

GT H L j

2.5

2

1.5

1

0.5

0

I ,I ,I [T =25°C]

GT H L j

I

GT

IH& I

L

T (°C)

j

-20-30-40 0 10-10 20 4030 50 60 70 80 90 100 110 120 130

Figure 7. Non-repetitive surge peak on-state

current for a sinusoidal pulse and

2

t

T initial = 25°C

j

I (A), I t (A s)

TSM

1000

corresponding values of I

22

I

TSM

Figure 6. Non repetitive surge peak on-state

current versus number of cycles

I (A)

TSM

200

150

T initial=25°C

100

50

0

1 10 100 1000

j

Number of cycles

t = 20 ms

One cycle

Figure 8. On-state characteristics (maximum

values)

I (A)

TM

1000

Tj=max

100

2

I t

t (ms)

100

1

2

p

510

Figure 9. Safe turn-off operating area

(dV/dt)c(V/µs)

1000

100

10

1

1

(dI/dt)c(A/ms)

10

T=25°C

10

1

123456

j

T initial = 25°C

j

100

V (V)

TM

T max.:

j

V =1.1V

t0

R =19m

d

Ω

4/7 Doc ID 18268 Rev 2

TPDVxx25 Package information

2 Package information

● Epoxy meets UL94,V0

● Cooling method: C (by conduction)

● Recommended torque value: 0.9 to 1.2 N·m

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. TOP3 insulated dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

H

A

A 4.4 4.6 0.173 0.181

R

ØL

K

B

B 1.45 1.55 0.057 0.061

C 14.35 15.60 0.565 0.614

D 0.5 0.7 0.020 0.028

G

F

E 2.7 2.9 0.106 0.114

F 15.8 16.5 0.622 0.650

G 20.4 21.1 0.815 0.831

P

C

H 15.1 15.5 0.594 0.610

J 5.4 5.65 0.213 0.222

JJ

D

E

K 3.4 3.65 0.134 0.144

ØL 4.08 4.17 0.161 0.164

P 1.20 1.40 0.047 0.055

R 4.60 typ. 0.181 typ.

Doc ID 18268 Rev 2 5/7

Ordering information TPDVxx25

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

TPDV825RG TPDV825

TOP3

insulated

TPDV1225RG TPDV1225

4.5 g 30 TubeTPDV1025RG TPDV1025

4 Revision history

Table 8. Document revision history

Date Revision Changes

30-Mar-2011 1 First issue.

13-Jan-2012 2 Updated dI/dt in Ta b l e 2 and added Vto and Rd to Ta b l e 3 .

6/7 Doc ID 18268 Rev 2

TPDVxx25

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Doc ID 18268 Rev 2 7/7