Datasheet TN815-800B, TN815-700B, TN815-600B, TN815-400B, TN805-800B Datasheet (SGS Thomson Microelectronics)
...Page 1
®
FEATURES
I
= 8 A
TRMS
V
= 400 V t o 800 V
DRM
IGT ≤ 5 mA and 15 mA
TN805/TN815-B
SCR’s
A
DESCRIPTION
G
A
The TN805/TN815-B serie of Silicon Controlled
Rectifiers uses a high performance TOPGLASS
K
PNPN technology.
These parts are intended for general purpose
applications using mount technology.
DPAK
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
Tc= 105°C8 A
(180° conduction angle)
I
T(AV)
Mean on-state current
Tc= 105°C5 A
(180° conduction angle)
I
TSM
Non repetitive surge peak on-state current
tp = 8.3 ms 73 A
(Tj initial = 25°C)
tp = 10 ms 70
2
I
tI
dI/dt Critical rate of rise of on-state current
2
t Value for fusing tp = 10ms 24.5 A2s
100 A/µs
= 100 mA dIG /dt = 1 A/µs.
I
G
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
Tl Maximum lead temperature for s oldering during 10s 260
TN805 or TN815
Symbol Parameter
400B 600B 700B 800B
V
DRM
V
RRM
August 1998 - Ed: 1A
Repetitive peak-off voltage
Tj = 125°C
400 600 700 800 V
- 40 to + 150
- 40 to + 125
°
°
Unit
C
C
1/5
Page 2
TN805/TN815-B
THERMAL RESISTANCES
Symbol Parameter Value Unit
2
Rth(j-a) Junction to ambient (S=0.5cm
)70
°
C/W
Rth(j-c) Junction to case for D .C 2.5
GATE CHARACTERISTICS
P
= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) V
G (AV)
= 5 V
RGM
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Type
TN805 TN815
TM
Ω
Ω
= 3 x I
T(AV)
Tj= 25°CMAX 5 15
Tj= 25°C MAX 1.5 V
Tj= 25°C TY P 2
I
GT
V
GT
V
GD
tgt V
VD = 12V (DC) RL= 33
VD = 12V (DC) RL= 33
VD = V
= V
D
RL = 3.3kΩ Tj= 125°CMIN 0.2 V
DRM
I
DRM
IG = 40mA dIG/dt = 0.5A/us
I
H
IT= 150mA Gate open Tj= 25°C MAX 25 30 mA
Value
°
C/W
Unit
µ
µ
A
s
I
L
V
TM
I
DRM
I
RRM
IG = 1.2 I
GT
ITM= 16A tp= 380µs
VDRM Rated
VRRM Rated Tj = 125°C MAX 2 mA
dV/dt Linear slope up to
=67%V
V
D
DRM
ORDERING INFORMATION
SCR
CURRENT
Tj= 25°C MAX 25 30 mA
Tj= 25°CMAX 1.6 V
Tj= 25°CMAX 10
Tj= 125°CMIN 50 150 V/
Gate open
TN 8 05 - 600 B
SENSITIVITY
PACKAG ES :
B: DPA K
/ V
V
DRM
RRM
µ
A
µ
s
2/5
Page 3
TN805/815-B
Fig. 1:
Maximum average power dissipation ver-
sus average on-state current .
P(W)
8
7
6
5
α = 30°
α = 60°
α = 90°
α = 120°
α = 180°
D.C.
4
3
2
1
0
01234567
Fig. 3-1:
Average and D.C. on-state current versus
IT(av)(A)
360°
α
case temperature.
IT(av)(A)
10
D.C.
8
6
4
2
0
0 102030405060708090100110120130
α = 180°
Tcase(°C)
Fig. 2 :
Correlati on b etween maximu m average
power dissipation and maximum allowable temperatures ( T
amb
and T
) for different thermal
case
resistances he atsink+contact.
P(W) Tcase (°C)
8
α = 180°
7
6
5
4
3
2
1
0
Fig. 3-2:
Rth=37°C/W
Tamb(°C)
0 102030405060708090100110120130
Average and D.C. on-state current versus
Rth=0°C/W
105
110
115
120
125
case temperature.
IT(av)(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 102030405060708090100110120130
D.C.
α = 180°
Tamb(°C)
Fig. 4-1:
Relative variation of ther mal impedance
versus pulse duration.
K=[Zth(j-c)/Rth(j-c)]
1.0
0.5
0.2
0.1
1E-3 1E-2 1E-1 1E+0
tp(s)
Fig. 4-2:
Relative variation of thermal impedance
versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
tp(s)
3/5
Page 4
TN805/TN815-B
Fig. 5:
Relative variation of gate trigger current and
holding current versus junction temperature.
Igt,IH[Tj]/Ig,IH[Tj=25°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40-200 20406080100120
Fig. 7:
Igt
IH
Tj(°C)
Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t.
ITSM(A),I²t(A²s)
300
ITSM
100
Tj initial=25°C
Fig. 6:
Non repetitive surge peak on-stat e current
versus number of cycles.
ITSM(A)
80
70
60
50
40
30
20
10
0
1 10 100 1000
Fig. 8:
On-state charact eristics (maxi mum va lues).
Number of cycles
ITM(A)
100.0
10.0
Tj=Tj max.
Tj initial=25°C
F=50Hz
Tj max.:
Vto=0.85V
Rt=46m
50
I²t
20
10
12 510
Fig. 9:
Thermal resistance junction to ambient ver-
tp(ms)
sus copper surface under tab (Epoxy printed circuit
board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
80
60
40
20
0
0 2 4 6 8 10 12 14 16 18 20
S(Cu) (cm²)
1.0
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Tj=25°C
VTM(V)
4/5
Page 5
PACKAGE MECHANICAL DATA
DPAK
TN805/815-B
DIMENSIONS
REF.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0. 60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
L2 0.80 0.031
L4 0. 60 1.00 0.023 0.039
V2 0° 8° 0° 8°
Millimeters Inches
Min. Typ. Max Min. Typ. Max.
FOOT PRINT DIMENSIONS
6.7
(in millimeters)
WEIGHT :
MARKING
0.30g
TYPE MARKING
6.7
T805- x00B
TN8
05x0
6.7
3
1.61.6
2.32.3
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T815-x00B
TN8
15x0
5/5
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