Page 1
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
250V 7.0Ω 2.0V 1.2A TN5325K1 TN5325N3 TN5325N8
* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
** Shipped on 2,000 piece carrier tape and reels.
DS(ON)
(max) (max) (min) TO-236AB* TO-92 TO-243AA**
V
GS(th)
I
D(on)
Features
❏ Low threshold – 2.0V max.
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Low C
❏ Excellent thermal stability
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Order Number / Package
Product marking for TO-243AA
Where ❋ = 2-week alpha date code
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
TN5325
Low Threshold
Product marking for SOT-23:
N3C❋
where ❋ = 2-week alpha date code
TN3C❋
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
S G D
TO-92
Note: See Package Outline section for dimensions.
1
G
TO-243AA
(SOT-89)
D
D
S
D
G
S
TO-236AB
(SOT-23)
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TA = 25°C °C/W °C/W
TO-236AB 150mA 400mA 0.36W 200 350 150mA 400mA
TO-92 215mA 800mA 0.74W 125 170 215mA 800mA
TO-243AA 316mA 1.5A 1.6W** 15 78** 316mA 1.5A
* I
(continuous) is limited by max rated Tj.
D
**Mounted on FR5 board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θ
jc
θ
ja
IDR*I
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 250 V ID = 100µA, VGS = 0V
Gate Threshold Voltage 0.6 2.0 V VGS = VDS, ID = 1mA
Change in V
with Temperature -4.5 mV/°CID = 1mA, V
GS(th)
GS
= V
DS
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 1.0 µAV
10.0 µAV
1.0 mA V
= 0V, VDS = 100V
GS
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
TA = 125°C
ON-State Drain Current 0.6
1.2 VGS = 10V, VDS = 25V
A
VGS = 4.5V, VDS = 25V
Static Drain-to-Source 8.0 Ω VGS = 4.5V, ID = 150mA
ON-State Resistance
Change in R
with Temperature 1.0 %/°CV
DS(ON)
7.0 Ω V
Ω
= 10V, ID = 1.0A
GS
= 4.5V, ID = 150mA
GS
Forward Transconductance 150 m VDS = 25V, ID = 200mA
Input Capacitance 110
Common Source Output Capacitance 60 pF V
= 0V, VDS = 25V, f = 1MHz
GS
Reverse Transfer Capacitance 23
Turn-ON Delay Time 20
Rise Time 15
Turn-OFF Delay Time 25
Fall Time 25
ns I
VDD = 25V
= 150mA
D
= 25Ω
R
GEN
Diode Forward Voltage Drop 1.8 V ISD = 200mA, VGS = 0V
Reverse Recovery Time 300 ns ISD = 200mA, VGS = 0V
TN5325
DRM
Switching Waveforms and Test Circuit
10V
INPUT
10%
0V
V
DD
OUTPUT
0V
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
t
d(ON)
t
10%
(ON)
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
INPUT
V
DD
R
L
OUTPUT
gen
D.U.T.
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
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