Page 1
Ordering Information
TN2640
TN2640
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
/R
DSS
BV
DGS
400V 5.0Ω 2.0V 2.0A TN2640LG TN2640N3 TN2640K4 TN2640ND
†
MIL visual screening available.
DS(ON)
(max) (max) (min) SO-8 TO-92 DPAK Die
Features
❏ Low threshold — 2.0V max.
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
V
GS(th)
I
D(ON)
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Order Number / Package
Applications
Package Options
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
S G D
TO-92
G
S
TO-252
(D-PAK)
†
D (TAB)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
*
Distance of 1.6 mm from case for 10 seconds.
12/19/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Note: See Package Outline section for dimensions.
1
NC
NC
1
2
3
S
4
G
top view
SO-8
D
8
D
7
D
6
D
5
Page 2
Thermal Characteristics
Package I
TO-92 220mA 2.0A 1.0W 125 170 220mA 2.0A
SO-8 260mA 2.0A 1.3W
DPAK 500mA 3.0A 2.5W
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
(continuous)* ID (pulsed) Power Dissipation
D
@ TC = 25°C °C/W °C/W
†
†
θ
jc
24 96
θ
ja
†
IDR*I
260mA 2.0A
6.25 50 500mA 3.0A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
400 V VGS = 0V, ID = 1.0mA
TN2640
DRM
V
∆V
I
GSS
I
DSS
GS(th)
GS(th)
Gate Threshold Voltage 0.8 2.0 V VGS = VDS, ID= 2.0mA
Change in V
with Temperature -2.5 -4.0 mV/°CVGS = VDS, ID= 2.0mA
GS(th)
Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAV
1.0 mA VGS = 0V, VDS = 0.8 Max Rating
I
D(ON)
ON-State Drain Current 1.5 3.5 VGS = 5.0V, VDS = 25V
2.0 4.0 V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
with Temperature 0.75 %/°CVGS = 10V, ID = 500mA
DS(ON)
Forward Transconductance 200 330 m VDS = 25V, ID = 100mA
Input Capacitance 180 225
Common Source Output Capacitance 35 70 pF
Reverse Transfer Capacitance 7.0 25
Turn-ON Delay Time 4.0 15
Rise Time 15 20
Turn-OFF Delay Time 20 25
Fall Time 22 27
Diode Forward Voltage Drop 0.9 V VGS = 0V, ISD = 200mA
Reverse Recovery Time 300 ns VGS = 0V, ISD = 1.0A
3.2 5.0 VGS = 4.5V, ID = 500mA
3.0 5.0 VGS = 10V, ID = 500mA
ns
= 0V, VDS = Max Rating
GS
TA = 125°C
A
= 10V, VDS = 25V
GS
Ω
Ω
VGS = 0V, VDS = 25V
f = 1.0 MHz
V
= 25V,
DD
= 2.0A,
I
D
R
= 25Ω
GEN
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
TN2640
5.0
4.0
3.0
(amperes)
2.0
D
I
1.0
0
0
2.0
1.6
1.2
Output Characteristics
VGS = 10V
6V
10
20
30 5040
VDS (volts)
Transconductance vs. Drain Current
VDS = 25V
4V
3V
2V
8V
Saturation Characteristics
2.5
2.0
1.5
(amperes)
1.0
D
I
0.5
0
0246 108
V
DS
Power Dissipation vs. Temperature
3.0
DPAK
2.4
1.8
VGS = 10V
6V
8V
4V
3V
2V
(volts)
(siemens)
0.8
FS
G
0.4
0
0 2.01.0
10
1.0
DPAK (DC)
TO-92 (DC)
0.1
(amperes)
D
I
0.01
0.001
0 100010010
TA = -55°C
25°C
125°C
3.0 5.04.0
ID (amperes)
D
Maximum Rated Safe Operating Area
TO-92 (pulsed)
SO-8 (pulsed)
SO-8 (DC)
TC = 25°C
VDS (volts)
(watts)
D
P
SO-8
1.2
TO-92
0.6
0
0 15010050
TC (°C)
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
tp (seconds)
1257525
TO-92
TC = 25°C
PD = 1.0W
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.15
1.10
TN2640
On-Resistance vs. Drain Current
10
VGS = 5V
8
1.05
(normalized)
1.00
DSS
BV
0.95
0.9
0.90
-50 0 50 100 150
3.0
2.4
1.8
(amperes)
1.2
D
I
0.6
6
VGS = 10V
(ohms)
4
DS(ON)
R
2
0
0 1.0 2.0 3.0 5.04.0
I
R
DS(ON)
V
(amperes)
D
@ 2mA
(th)
@ 10V, 0.5A
2.2
1.8
1.4
1.0
0.6
(normalized)
DS(ON)
R
Tj (°C)
Transfer Characteristics
25°C
°C
= -55
T
A
125°C
(normalized)
= 25V
V
DS
V
VTH and RDS Variation with Temperature
1.4
1.2
1.0
0.8
GS(th)
0.6
0
0246810
(volts)
V
GS
Capacitance vs. Drain-to-Source Voltage
400
f = 1MHz
300
200
C
ISS
C (picofarads)
100
C
OSS
C
0
010203040
RSS
VDS (volts)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
0.4
-50 0 50 100 150
0.2
Tj (°C)
Gate Drive Dynamic Characteristics
10
8
653pF
6
V
= 10V
(volts)
GS
V
4
2
DS
V
= 40V
DS
253pF
0
012
(nanocoulombs)
Q
G
3
45
12/19/01rev.1
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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