Page 1
N-Channel Enhancement-Mode
TO-243AA
(SOT-89)
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
350V 6.0Ω 1.0A TN2435N8 TN2435NW
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
** Die in wafer form.
DS(ON)
(max) (min) TO-243AA* Die**
I
D(ON)
Order Number / Package
TN2435
Low Threshold
Product marking for TO-243AA:
TN4D❋
where ❋ = 2-week alpha date code
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces
❏ Solid state relays
❏ Power Management
❏ Analog switches
❏ Ringers
❏ Telecom switches
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
*
Distance of 1.6 mm from case for 10 seconds.
DSS
DGS
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
G
D
S
Note: See Package Outline section for dimensions.
D
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
Page 2
Thermal Characteristics
TN2435
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
@ TA = 25°C °C/W °C/W
TO-243AA 365mA 1.8A 1.6W
* I
(continuous) is limited by max rated Tj.
D
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
increase possible on ceramic substrate.
D
†
15 78
†
365mA 1.8A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 350 V VGS = 0V, ID = 250µA
Gate Threshold Voltage 0.8 V VGS = VDS, ID= 1.0mA
Change in V
with Temperature -5.5 mV/°CVGS = VDS, ID= 1.0mA
GS(th)
Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAVGS = 0V, VDS = Max Rating
1.0 mA V
= 0V, VDS = 0.8 Max Rating
GS
TA = 125°C
ON-State Drain Current 0.5
1.0 VGS = 10V, VDS = 25V
A
VGS = 4.5V, VDS = 25V
Static Drain-to Source ON-State 15.0 VGS = 3.0V, ID = 150mA
Resistance
10.0 Ω VGS = 4.5V, ID = 250mA
6.0 VGS = 10V, ID = 750mA
Change in R
Forward Transconductance 125 m VDS = 25V, ID = 350mA
with Temperature 1.7 %/°CVGS = 10V, ID = 750mA
DS(ON)
Ω
Input Capacitance 125 200
V
= 0V, VDS = 25V
Common Source Output Capacitance 25 70 pF
Reverse Transfer Capacitance 8 25
GS
f = 1.0MHz
Turn-ON Delay Time 5 20
Rise Time 10 20 ns
Turn-OFF Delay Time 28 40
Fall Time 10 30
VDD = 25V,
ID = 750mA
R
= 25Ω
GEN
Diode Forward Voltage Drop 1.5 V VGS = 0V, ISD = 750mA
Reverse Recovery Time 300 ns VGS = 0V, ISD = 750mA
IDR*I
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
TN2435
3.0
2.5
2.0
1.5
(Amperes)
D
I
1.0
0.5
0
01020304050
1.0
0.8
Output Characteristics
V
(Volts)
DS
Tr ansconductance vs. Drain Current
VDS=15V
TA=-55°C
VGS = 10V
8V
6V
5V
4V
3V
2.5V
Saturation Characteristics
2.0
1.6
1.2
(Amperes)
D
I
0.8
0.4
0.0
0246810
V
(Volts)
DS
Power Dissipation vs. Case Temperature
2.0
TO-243AA
1.5
VGS = 10V
8V
6V
5V
4V
3V
2.5V
0.6
(siemens)
FS
0.4
G
0.2
0.0
0.0 0.5 1.0 1.5 2.0
TA=25°C
TA=125°C
ID (Amperes)
Maximum Rated Safe Operating Area
10
TO-243AA (pulsed)
1.0
TO-243AA (DC)
0.1
(amperes)
D
I
0.01
TA=25°C
0.001
1 100010010
V
(Volts)
DS
(Watts)
1.0
PD
0.5
0.0
0255075100 125 150
TC (°C)
Thermal Response Characteristics
1.0
TO-243AA
PD = 1.6W
0.8
0.6
0.4
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
TC = 25°C
tp (seconds)
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.2
BV @ 250µA
TN2435
On Resistance vs. Drain Current
20
1.1
(Normalized)
1.0
DSS
BV
0.9
0.8
-50 0 50 100 150
TJ (°C)
Tr ansfer Characteristics
2.0
TA = 25°C
TA = -55°C
1.6
1.2
TA = 150°C
(Amperes)
D
I
0.8
0.4
VGS = 3V
16
(ohms)
12
DS(ON)
8
R
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS =
4.5V
VGS = 10V
ID (Amperes)
V
GS(TH)
1.4
1.2
1.0
(normalized)
0.8
GS(th)
V
V
= 25V
DS
0.6
V
GS(th)
and R
@ 1mA
R
DS(ON)
DS(ON)
@ 10V, 0.75A
w/ Temperature
2.4
2.0
1.6
1.2
0.8
(normalized)
DS(ON)
R
0.0
0246810
V
(Volts)
GS
Capacitance vs. Drain Source Voltage
300
f = 1MHz
225
150
(picofarads)
C
ISS
C
75
C
OSS
C
RSS
0
01020304050
V
(Volts)
DS
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
0.4
-50 0 50 100 150
0.4
TJ (°C)
Gate Drive Dynamic Characteristics
10
ID = 365mA
8
VDS=10V
6
(volts)
GS
V
4
VDS=40V
525pF
2
150pF
0
0.0 1.0 2.0 3.0 4.0 5.0
Q (nanocoulombs)
G
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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