Page 1
N-Channel Enhancement-Mode
TO-243AA
(SOT-89)
Vertical DMOS FETs
Ordering Information
/R
BV
DSS
BV
DGS
250V 3.5Ω 1.5A TN2425N8 TN2425ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
DS(ON)
(max) (min) TO-243AA* DIE
I
D(ON)
Order Number / Package
TN2425
Low Threshold
Product marking for TO-243AA:
TN4C❋
where ❋ = 2-week alpha date code
Features
❏ Low threshold
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally induced secondary breakdown.
Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
*
Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
G
D
S
Note: See Package Outline section for dimensions.
1
D
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TA = 25°C °C/W °C/W
TO-243AA 480mA 1.9A 1.6W
* I
(continuous) is limited by max rated Tj.
D
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
increase possible on ceramic substrate.
D
†
θ
jc
θ
15 78
ja
†
IDR*I
480mA 1.9A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 250 V VGS = 0V, ID = 250µA
Gate Threshold Voltage 0.8 V VGS = VDS, ID= 1.0mA
Change in V
with Temperature -5.5 mV/°CVGS = VDS, ID= 1.0mA
GS(th)
Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAVGS = 0V, VDS = Max Rating
1.0 mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ON-State Drain Current 0.8
1.5 VGS = 10V, VDS = 25V
A
VGS = 4.5V, VDS = 25V
Static Drain-to-Source ON-State 6.0 VGS = 3.0V, ID = 150mA
Resistance
5.0 Ω V
= 4.5V, ID = 250mA
GS
3.5 VGS = 10V, ID = 0.5A
Change in R
Forward Transconductance 500 m VDS = 25V, ID = 250mA
Input Capacitance 105 200
Common Source Output Capacitance 25 100 pF
Reverse Transfer Capacitance 7 40
with Temperature 1.7 %/°CVGS = 10V, ID = 0.5A
DS(ON)
Ω
= 0V, VDS = 25V
V
GS
f = 1.0MHz
Turn-ON Delay Time 5 15
Rise Time 10 25 ns
Turn-OFF Delay Time 25 35
Fall Time 5 15
VDD = 25V,
= 500mA
I
D
R
= 25Ω
GEN
Diode Forward Voltage Drop 1.5 V VGS = 0V, ISD = 500mA
Reverse Recovery Time 300 ns VGS = 0V, ISD = 500mA
TN2425
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
TN2425
5
4
3
(Amperes)
D
I
2
1
0
01020304050
1.0
0.8
0.6
(siemens)
FS
0.4
G
Output Characteristics
V
(Volts)
DS
Tr ansconductance vs. Drain Current
TA=-55°C
TA=25°C
TA=125°C
VDS=15V
VGS = 10V
8V
6V
5V
4V
3V
2.5V
Saturation Characteristics
3.0
2.5
2.0
1.5
(Amperes)
D
I
1.0
0.5
0.0
0246810
V
(Volts)
DS
Power Dissipation vs. Case Temperature
2.0
TO-243AA
1.5
(Watts)
1.0
PD
VGS = 10V
8V
6V
5V
4V
3V
2.5V
0.2
0.0
0.0 0.5 1.0 1.5 2.0
ID (Amperes)
Maximum Rated Safe Operating Area
10
TO-243AA (pulsed)
1.0
TO-243AA (DC)
0.1
(amperes)
D
I
0.01
TA=25°C
0.001
1 100010010
V
(Volts)
DS
0.5
0.0
0255075100 125 150
TC (°C)
Thermal Response Characteristics
1.0
TO-243AA
PD = 1.6W
0.8
0.6
0.4
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
TC = 25°C
tp (seconds)
3
Page 4
Typical Performance Curves
TN2425
BV
Variation with Temperature
DSS
1.2
BV @ 250µA
1.1
(Normalized)
1.0
DSS
BV
0.9
0.8
-50 0 50 100 150
TJ (°C)
Tr ansfer Characteristics
3.0
2.5
2.0
TA = -55°C
1.5
(Amperes)
D
I
1.0
0.5
0.0
0246810
V
(Volts)
GS
TA = 25°C
TA = 125°C
V
DS
= 25V
On Resistance vs. Drain Current
10
VGS = 4.5V
(ohms)
DS(ON)
R
8
6
4
2
0
012345
ID (Amperes)
V
2.0
1.8
1.6
1.4
(normalized)
1.2
1.0
GS(th)
V
0.8
0.6
0.4
-50 0 50 100 150
GS(TH)
and R
DS(ON)
R
DS(ON)
w/ Temperature
@ 10V, 0.5A
V
GS(th)
TJ (°C)
VGS = 10V
@ 1mA
1.8
1.5
1.2
0.9
0.6
(normalized)
DS(ON)
R
Capacitance vs. Drain Source Voltage
200
f = 1MHz
150
C
ISS
100
(picofarads)
C
50
C
RSS
0
01020304050
V
(Volts)
DS
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
C
OSS
Gate Drive Dynamic Characteristics
10
ID = 480mA
8
6
(volts)
GS
4
V
2
128pF
0
0.0 1.0 2.0 3.0 4.0 5.0
VDS=10V
VDS=40V
453pF
Q (nanocoulombs)
G
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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