Page 1
N-Channel Enhancement-Mode
V ertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
200V 6.0Ω 1.0A 1.6V TN0620N3 TN0620N5
†
MIL visual screening available
DS(ON)
(max) (min) (max)
I
D(ON)
V
GS(th)
Order Number / Package
TO-92 TO-220
TN0620
Low Threshold
7
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
■■ Low threshold — 1.6V max.
■■ High input impedance
■■ Low input capacitance — 110pF typical
■■ Fast switching speeds
■■ Low on resistance
■■ Free from secondary breakdown
■■ Low input and output leakage
■■ Complementary N- and P-channel devices
Applications
■■ Logic level interfaces – ideal for TTL and CMOS
■■ Solid state relays
■■ Battery operated systems
■■ Photo voltaic drives
■■ Analog switches
■■ General purpose line drivers
■■ Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
DSS
DGS
7-55
S G D
TO-92
Note: See Package Outline section for dimensions.
TO-220
TAB: DRAIN
G
D
S
Page 2
Thermal Characteristics
TN0620
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja
IDR*I
@ TC = 25°C °C/W °C/W
TO-92 0.4A 2.0A 1W 125 170 0.4A 2.0A
TO-220 1.5A 2.5A 45W 2.7 70 1.5A 2.5A
ID (continuous) is limited by max rated Tj.
*
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 2.0mA
Gate Threshold Voltage 0.6 1.6 V VGS = VDS, ID = 1.0mA
Change in V
with Temperature -5.0 mV/°CVGS = VDS, ID = 1.0mA
GS(th)
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAV
1.0 mA V
ON-State Drain Current 0.5 VGS = 5V, VDS = 25V
A
1.0 V
Static Drain-to-Source
ON-State Resistance
Change in R
with Temperature 1.4 %/°CVGS = 10V, ID = 0.5A
DS(ON)
Forward Transconductance 300 400 m VDS = 25V, ID = 0.5A
6.0 8.0 VGS = 5V, ID = 0.25A
Ω
4.0 6.0 V
Ω
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
T
= 125°C
A
= 10V, VDS = 25V
GS
= 10V, ID = 0.5A
GS
Input Capacitance 110 150
Common Source Output Capacitance 40 85 pF
VGS = 0V, VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance 10 35
Turn-ON Delay Time 10
Rise Time 8
Turn-OFF Delay Time 20
Fall Time 20
ns
VDD = 25V
I
= 1.0A
D
R
= 25Ω
GEN
Diode Forward Voltage Drop 1.8 V VGS = 0V, ISD = 1.0A
Reverse Recovery Time 300 ns VGS = 0V, ISD = 1.0A
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
d(ON)
10%
90%
t
r
t
DD
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
7-56
PULSE
GENERATOR
INPUT
50Ω
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
Output Characteristics
4.0
TN0620
Saturation Characteristics
4.0
3.2
2.4
(amperes)
1.6
D
I
0.8
0
0102030 5040
VDS(volts)
Transconductance vs. Drain Current
1.0
0.8
0.6
(siemens)
0.4
FS
G
VGS =
VDS = 25V
TA = -55°C
T
= 25°C
A
T
= 150°C
A
10V
8V
6V
4V
3V
2V
3.2
2.4
1.6
(amperes)
D
I
0.8
0
0246 108
VDS(volts)
Power Dissipation vs. Case Temperature
50
TO-220
40
30
D
20
P (watts)
VGS =
10V
8V
6V
4V
3V
2V
7
0.2
0
0 2.50.5 1.0 1.5 2.0
ID(amperes)
Maximum Rated Safe Operating Area
10
TO-220 (DC)
1.0
TO-92 (DC)
(amperes)
D
I
0.1
0.01
TC = 25°C
1 100010010
VDS(volts)
10
TO-39
TO-92
0
0 15010050 1257525
TCC)°(
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
TO-220
P
= 45W
D
= 25°C
T
C
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1
tp(seconds)
TO-92
= 1W
P
D
= 25°C
T
C
7-57
Page 4
Typical Performance Curves
Variation with Temperature
BV
DSS
1.1
TN0620
On-Resistance vs. Drain Current
15
1.0
DSS
BV (normalized)
0.9
-50 0 50 100 150
C)°(T
j
Transfer Characteristics
4.0
VDS= 25V
3.2
2.4
(amperes)
1.6
D
I
0.8
T
A
= -55
T
A
°C
T
= 150
= 25
A
°C
°C
12
9
VGS= 5V
(ohms)
6
DS(ON)
R
3
0
0 0.8 1.6 2.4 4.03.2
(amperes)
I
D
V
and R Variation with Temperature
DS(th)
1.4
V @ 1mA
1.2
1.0
GS(th)
0.8
V (normalized)
0.6
(th)
VGS= 10V
R @ 10V, 0.5A
DS
2.0
1.6
1.2
0.8
0.4
DS(ON)
R (normalized)
0
0246810
(volts)
V
GS
Capacitance vs. Drain-to-Source Voltage
200
f = 1MHz
150
C
100
C (picofarads)
50
0
0 10203040
C
C
VDS(volts)
ISS
OSS
RSS
7-58
-50 0 50 100 150
T
C)°(
j
Gate Drive Dynamic Characteristics
10
VDS= 10V
8
6
(volts)
GS
4
V
2
0
0 0.5 1.0
100 pF
Q (nanocoulombs)
G
178 pF
1.5
0
VDS= 40V
2.0 2.5
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