Page 1
Ordering Information
TN0604
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
BV
/R
DSS
BV
DGS
40V 0.75Ω 4.0A 1.6V TN0604N3 —
40V 1.0Ω 4.0A 1.6V — TN0604WG
* Same as
SO-20 with 300 mil wide body.
DS(ON)
(max) (min) (max) TO-92 SOW-20*
I
D(ON)
V
GS(th)
Features
❏ Low threshold — 1.6V max.
❏ High input impedance
❏ Low input capacitance — 140pF typical
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Order Number / Package
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
02/06/02
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Notes:
1. See Package Outline section for dimensions.
2. See Array section for quad pinouts.
1
S G D
TO-92
SOW-20
Page 2
Thermal Characteristics
TN0604
Package I
(continuous)* ID (pulsed) Power Dissipation
D
θ
jc
θ
ja
IDR*I
@ TC = 25°C °C/W °C/W
TO-92 700mA 4.6A 1W 125 170 700mA 4.6A
SOW-20 Refer to Enhancement Mode MOSFET Arrays Section.
*
ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
V
GS(th)
∆V
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
DSS
GS(th)
Drain-to-Source Breakdown Voltage 40
VV
Gate Threshold Voltage 0.6 1.6 V VGS = VDS, ID = 1.0mA
Change in V
with Temperature -3.8 -4.5 mV/°CVGS = VDS, ID = 2.5mA
GS(th)
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAVGS = 0V, VDS = Max Rating
1.0 mA VGS = 0V, VDS = 0.8 Max Rating
ON-State Drain Current 1.5 2.1 VGS = 5V, VDS = 20V
A
4.0 7.0 VGS = 10V, VDS = 20V
Static Drain-to-Source
TO-92/SOW-20 1.0 1.6 Ω VGS = 5V, ID = 0.75A
ON-State Resistance
TO-92 0.6 0.75
Ω V
SOW - 20 1.0
= 0V, ID = 2.0mA
GS
TA = 125°C
= 10V, ID = 1.5A
GS
DRM
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2: All A.C. parameters sample tested.
Change in R
Forward Transconductance 0.5 0.8 VDS = 20V, ID = 1.5A
Input Capacitance 140 190
Common Source Output Capacitance 75 110 pF
Reverse Transfer Capacitance 25 50
Turn-ON Delay Time 10
Rise Time 6.0
Turn-OFF Delay Time 25
Fall Time 20
Diode Forward Voltage Drop 1.2 1.8 V VGS = 0V, ISD = 1.5A
Reverse Recovery Time 300 ns VGS = 0V, ISD = 1A
with Temperature 0.5 0.75 %/°CVGS = 10V, ID = 1.5A
DS(ON)
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
DD
d(ON)
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
PULSE
GENERATOR
2
ns I
R
gen
INPUT
Ω
VGS = 0V, VDS = 20V
f = 1 MHz
VDD = 20V
= 0.5A
D
R
GEN
= 25Ω
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
TN0604
Output Characteristics
10
8
6
(amperes)
4
D
I
2
0
0102030 5040
VDS(volts)
Transconductance vs. Drain Current
2.0
VGS =
V
VDS = 25V
DS
10V
9V
8V
7V
6V
5V
4V
3V
Saturation Characteristics
10
8
6
4
(amperes)
D
I
2
0
0246 108
VDS(volts)
Power Dissipation vs. Case Temperature
2.0
V
=
GS
10V
9V
8V
7V
6V
5V
4V
3V
TA = -55°C
1.0
(siemens)
FS
G
0 0
071 456
23
TA = 25°C
TA = 125°C
ID(amperes)
Maximum Rated Safe Operating Area
10
TO-92 (pulsed)
1.0
(amperes)
D
I
TO-92 (DC)
0.1
1.0
D
P (watts)
1.0
0.8
0.6
0.4
TO-92
0 15010050
TCC)°(
Thermal Response Characteristics
1257525
TC = 25°C
0.01
0.1 100101
VDS(volts)
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1
3
tp(seconds)
TO-92
C = 25°C
T
D = 1W
P
Page 4
Typical Performance Curves
TN0604
Variation with Temperature
BV
DSS
1.1
1.0
(normalized)
DSS
BV
0.9
-50 0 50 100 150
Tj (°C)
Transfer Characteristics
10
(amperes)
D
I
VDS= 25V
8
6
4
2
T
A
T
= -55
T
= 125
A
°
A
C
= 25
On-Resistance vs. Drain Current
2.0
= 5V
V
GS
VGS = 10V
(ohms)
1.0
DS(ON)
R
0
0 10.0
V
and RDS Variation with Temperature
(th)
1.4
V
C
°
1.2
1.0
(th)
(normalized)
C°
GS(th)
0.8
V
0.6
(amperes)
I
D
@ 1mA
5.0
R @ 10V, 1.5A
DS
1.4
1.2
1.0
0.8
0.6
(normalized)
DS(ON)
R
0
0246 108
V
(volts)
GS
Capacitance vs. Drain-to-Source Voltage
200
f = 1MHz
150
100
C
ISS
C
OSS
C (picofarads)
50
0
010203040
C
RSS
VDS (volts)
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
-50 0 50 100 150
T
(°C)
j
Gate Drive Dynamic Characteristics
10
8
6
(volts)
GS
4
V
2
0
0 1.0 2.0 3.0 5.04.0
V
DS
170 pF
= 10V
170 pF
= 40V
V
DS
QG (nanocoulombs)
02/06/02
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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