Page 1
N-Channel Enhancement-Mode
V ertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
60V 3.0Ω 2A 2.0V TN0106N3 —
100V 3.0Ω 2A 2.0V TN0110N3 TN0110ND
†
MIL visual screening available
DS(ON)
(max) (min) (max) TO-92 Die
I
D(ON)
V
GS(th)
Order Number / Package
TN0106
TN01 10
Low Threshold
†
7
Features
■■ Low threshold — 2.0V max.
■■ High input impedance
■■ Low input capacitance — 50pF typical
■■ Fast switching speeds
■■ Low on resistance
■■ Free from secondary breakdown
■■ Low input and output leakage
■■ Complementary N- and P-channel devices
Applications
■■ Logic level interfaces – ideal for TTL and CMOS
■■ Solid state relays
■■ Battery operated systems
■■ Photo voltaic drives
■■ Analog switches
■■ General purpose line drivers
■■ Telecom switches
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
DSS
DGS
S G D
TO-92
Note: See Package Outline section for dimensions.
7-35
Page 2
Thermal Characteristics
TN0106/TN0110
Package I
(continuous)* ID (pulsed) Power Dissipation
D
θ
jc
θ
ja
IDR*I
@ TC = 25°C °C/W °C/W
TO-92 0.5A 2.0A 1.0W 125 170 0.5A 2.0A
ID (continuous) is limited by max rated Tj.
*
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
V
GS(th)
∆V
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
GS(th)
Gate Threshold Voltage 0.6 2.0 V VGS = VDS, ID = 0.5mA
Change in V
with Temperature -3.2 -5.0 mV/°CVGS = VDS, ID = 1.0mA
GS(th)
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 10 VGS = 0V, VDS = Max Rating
ON-State Drain Current 0.75 1.4 VGS = 5V, VDS = 25V
Static Drain-to-Source
ON-State Resistance
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
Forward Transconductance 225 400 m VDS = 25V, ID = 500mA
Input Capacitance 50 60
Common Source Output Capacitance 25 35 pF
Reverse Transfer Capacitance 4.0 8.0
Turn-ON Delay Time 2.0 5.0
Rise Time 3.0 5.0
Turn-OFF Delay Time 6.0 7.0
Fall Time 3.0 6.0
Diode Forward Voltage Drop 1.0 1.5 V ISD = 0.5A, VGS = 0V
Reverse Recovery Time 400 ns I
with Temperature 0.6 1.1 %/°CI
DS(ON)
TN0110 100
TN0106 60
2.0 3.4 V
VI
500 µAV
= 1mA, VGS = 0V
D
= 0V, VDS = 0.8 Max Rating
GS
T
= 125°C
A
A
= 10V, VDS = 25V
GS
2.0 4.5 VGS = 4.5V, ID = 250mA
Ω
1.6 3.0 V
= 10V, ID = 500mA
GS
= 0.5A, VGS = 10V
D
Ω
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V
ns I
= 1.0A
D
R
= 25Ω
GEN
= 0.5A, VGS = 0V
SD
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
7-36
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
TN0106/TN0110
Output Characteristics
5
4
VGS = 10V
3
8V
(amperes)
2
D
I
1
0 0
0102030 5040
6V
4V
2V
VDS(volts)
Transconductance vs. Drain Current
0.5
TA = -55°C
0.4
TA = 25°C
Saturation Characteristics
5
4
3
2
(amperes)
D
I
1
0246 108
VDS(volts)
Power Dissipation vs. Case Temperature
10
8
VGS = 10V
8V
6V
4V
2V
7
0.3
(siemens)
0.2
FS
G
0.1
0
0
10
1.0
(amperes)
I
D
0.1
0.01
1 100010010
TO-92 (DC)
= 150°C
T
A
VDS= 25V
.6 1.2 1.8
2.4
ID(amperes)
Maximum Rated Safe Operating Area
TC = 25°C
TO-92 (pulsed)
VDS(volts)
3.0
6
D
4
P (watts)
2
TO-92
0
0 15010050
TCC)°(
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1
tp(seconds)
1257525
TO-92
TC = 25°C
PD = 1W
7-37
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.3
TN0106/TN0110
On-Resistance vs. Drain Current
5.0
VGS = 5V VGS = 10V
1.2
1.1
1.0
DSS
BV (normalized)
0.9
0.8
-50 0 50 100 150
C)°(T
j
Transfer Characteristics
3.0
VDS = 25V
2.4
1.8
TA = -55°C
25°C
150°C
4.0
3.0
(ohms)
2.0
DS(ON)
R
1.0
0
1.4
1.2
1.0
1.0
05.0
V
and R Variation with Temperature
DS(th)
V
(th)
2.0
(amperes)
I
D
@ 0.5mA
R
DS(ON)
3.0
4.0
@ 10V, 0.5A
1.4
1.2
1.0
(amperes)
D
1.2
I
0.6
0
0246810
(volts)
V
GS
Capacitance vs. Drain-to-Source Voltage
100
f = 1MHz
75
C
50
C (picofarads)
25
0
0 10203040
C
C
OSS
RSS
VDS(volts)
ISS
0.8
GS(th)
V (normalized)
0.6
0.4
-50 0 50 100 150
T
C)°(
j
Gate Drive Dynamic Characteristics
10
8
VDS = 10V
55pF
6
(volts)
GS
4
V
2
0
0 1.0 2.0 3.0 4.0 5.0
50pF
Q (nanocoulombs)
G
40V
0.8
0.6
0.4
DS(ON)
R (normalized)
7-38
Loading...