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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors TIP562/563
DESCRIPTION
· Collector-Emitter Sustaining Voltage : V
CEO(SUS)
= 400V(Min)- TIP563
·High Power Dissipation
APPLICATIONS
·Designed for converters, inverters, pulse-width-modulated
regulators, and a variety of power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
SYMBOL PARAMETER VALUE UNIT
V
Collector-Base Voltage
CBO
= 300V(Min)- TIP562
=25℃)
a
TIP562 300
TIP563 400
V
TIP562 300
V
CEO(SUS)
V
EBO
I
I
CM
I
P
T
T
C
B
stg
Collector-Emitter Voltage
TIP563 400
Emitter-Base Voltage 8 V
Collector Current-Continuous 10 A
Collector Current-Peak 15 A
B Base Current-Continuous 2 A
Collector Power Dissipation
C
J
=100℃
@T
C
Junction Temperature 200
Storage Temperature -65~200
100 W
V
℃
℃
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance,Junction to Case 1.0
℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors TIP562/563
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
I
CEO
I
CBO
I
EBO
h
FE-1
(sat)
Collector-Emitter
Sustaining Voltage
TIP563
=100mA ; IB=0
I
C
V
400
Collector-Emitter Saturation Voltage IC= 10A; IB= 1.66A 1.2 V
Collector-Emitter Saturation Voltage IC= 15A; IB= 5A 2.0 V
Base-Emitter Saturation Voltage IC= 10A; IB= 1.66A 1.4 V
TIP562 VCE= 270V;IB= 0 1.0
TIP562 300
Collector
Cutoff Current
TIP563 VCE= 360V;IB= 0
mA
1.0
TIP562 VCB= 300V;IE= 0 0.1
Collector
Cutoff Current
TIP563 V
= 400V;IE= 0
CB
mA
0.1
Emitter Cutoff Current VEB= 8V; IC=0 5.0 mA
DC Current Gain IC= 1A ; VCE= 4V 20
h
FE-2
DC Current Gain IC= 10A ; VCE= 4V 8
Switching Times
t
d
t
r
t
stg
t
f
Delay Time 0.05
Rise Time 0.5
Storage Time 1.2
Fall Time
V
= 180V;VBE= -5.2V
CC
= 10A; IB1= -IB2= 2A
I
C
0.3
μs
μs
μs
μs
isc Website：www.iscsemi.cn
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