Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors TIP42/42A/42B/42C
DESCRIPTION
·DC Current Gain -h
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= -40V(Min)- TIP42; -60V(Min)- TIP42A
-80V(Min)- TIP42B; -100V(Min)- TIP42C
·Complement to Type TIP41/41A/41B/41C
APPLICATIONS
·Designed for use in general purpose amplifer and
switching applications
ABSOLUTE MAXIMUM RATINGS(T =25℃)
SYMBOL PARAMETER VALUE UNIT
= 30(Min)@ I
FE
= -0.3A
C
a
V
CBO
V
CEO
V
EBO
I
I
CM
I
P
T
TIP42 -40
TIP42A -60
Collector-Base Voltage
TIP42B -80
TIP42C -100
TIP42 -40
TIP42A -60
Collector-Emitter Voltage
TIP42B -80
TIP42C -100
Emitter-Base Voltage -5 V
C
B
Collector Current-Continuous -6 A
Collector Current-Peak -10 A
Base Current -2 A
B
Collector Power Dissipation
TC=25℃
C
Collector Power Dissipation
=25℃
T
a
Junction Temperature 150 ℃
j
65
2
V
V
W
T
stg
Storage Temperature Range -65~150 ℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors TIP42/42A/42B/42C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
TIP42 -40
V
CEO(SUS)
V
CE(sat)
V
BE(on)
I
CES
I
CEO
I
EBO
Collector-Emitter
Sustaining Voltage
TIP42A -60
I
= -30mA; IB= 0
C
V
TIP42B -80
TIP42C
-100
Collector-Emitter Saturation Voltage IC= -6A ;IB= -0.6A -1.5 V
Base-Emitter On Voltage IC= -6A ; VCE= -4V -2.0 V
TIP42 VCE= -40V; VEB= 0
TIP42A VCE= -60V; VEB= 0
Collector Cutoff Current
-0.4 mA
TIP42B VCE= -80V; VEB= 0
TIP42C VCE= -100V; VEB= 0
TIP42/42A VCE= -30V; IB= 0 B
Collector Cutoff Current
TIP42B/42C V
= -60V; IB= 0 B
CE
-0.7 mA
Emitter Cutoff Current VEB= -5V; IC= 0 -1.0 mA
h
h
FE-1
FE-2
f
T
DC Current Gain IC= -0.3A ; VCE= -4V 30
DC Current Gain IC= -3A ; VCE= -4V 15 75
Current-Gain—Bandwidth Product IC= -0.5A ;VCE= -10V 3 MHz
isc Website：www.iscsemi.cn
Page 3
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors TIP42/42A/42B/42C
isc Website：www.iscsemi.cn
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