Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors TIP41/41A/41B/41C
DESCRIPTION
·DC Current Gain -h
·Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= 40V(Min)- TIP41; 60V(Min)- TIP41A
80V(Min)- TIP41B; 100V(Min)- TIP41C
·Complement to Type TIP42/42A/42B/42C
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T =25℃a)
SYMBOL PARAMETER VALUE UNIT
= 30(Min)@ I
FE
= 0.3A
C
TIP41 40
TIP41A 60
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
Collector-Base Voltage
TIP41B 80
TIP41C 100
TIP41 40
TIP41A 60
Collector-Emitter Voltage
TIP41B 80
TIP41C 100
Emitter-Base Voltage 5 V
Collector Current-Continuous 6 A
Collector Current-Peak 10 A
B Base Current 2 A
Collector Power Dissipation
TC=25℃
Collector Power Dissipation
=25℃
T
a
65
2
V
V
W
T
T
stg
Junction Temperature 150
j
Storage Temperature Range -65~150
isc Website：www.iscsemi.cn
℃
℃
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors TIP41/41A/41B/41C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
TIP41 40
V
CEO(SUS)
V
CE(sat)
V
BE(on)
I
CES
I
CEO
Collector-Emitter
Sustaining Voltage
= 30mA; IB= 0
I
C
V
TIP41B 80
TIP41A 60
TIP41C
100
Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A B 1.5 V
Base-Emitter On Voltage IC= 6A ; VCE= 4V 2.0 V
TIP41 VCE= 40V; VEB= 0
TIP41A VCE= 60V; VEB= 0
Collector Cutoff Current
0.4 mA
TIP41B VCE= 80V; VEB= 0
TIP41C V
= 100V; VEB= 0
CE
TIP41/41A VCE= 30V; IB= 0 B
Collector Cutoff Current
TIP41B/41C V
= 60V; IB= 0 B
CE
0.7 mA
I
h
h
EBO
FE-1
FE-2
f
T
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 0.3A ; VCE= 4V 30
DC Current Gain IC= 3A ; VCE= 4V 15 75
Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V 3 MHz
isc Website：www.iscsemi.cn
Page 3
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistors TIP41/41A/41B/41C
isc Website：www.iscsemi.cn
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