
TIP33C
TIP34C
Complementary power transistors
Features
■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
Applications
■ General purpose
Description
The devices are manufactured in epitaxial-base
planar technology and are suitable for power
linear and switching applications.
.
2
1
TO-247
Figure 1. Internal schematic diagrams
Table 1. Device summary
Order code Marking Package Packaging
TIP33C TIP33C
TO-247 Tube
TIP34C TIP34C
February 2008 Rev 3 1/7
www.st.com
7

Electrical ratings TIP34C
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
NPN TIP33C
PNP TIP34C
V
V
V
V
I
P
T
For PNP type voltage and current values are negative.
Collector-base voltage (IE = 0) 140 V
CBO
Collector-emitter voltage (VBE = 0) 140 V
CES
Collector-emitter voltage (IB = 0) 100 V
CEO
Emitter-base voltage (IC = 0) 5 V
EBO
I
Collector current 10 A
C
Collector peak current (tP < 5 ms) 15 A
CM
I
Base current 3 A
B
Total dissipation at T
TOT
Storage temperature -65 to 150 °C
stg
T
Max. operating junction temperature 150 °C
J
= 25 °C 80 W
case
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 1.56 °C/W
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TIP34C Electrical characteristics
2 Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CES
I
CEO
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(on)
h
FE
Collector cut-off current
(V
= 0)
BE
Collector cut-off current
= 0)
(I
B
Emitter cut-off current
= 0)
(I
C
V
V
V
CE
CE
EB
= 140 V
= 60 V
= 5 V
0.4 mA
0.7 mA
1mA
Collector-emitter
(1)
sustaining voltage
= 0)
(I
B
Collector-emitter
(1)
saturation voltage
(1)
Base-emitter voltage
(1)
DC current gain
h
fe
f
T
Small signal current gain
Transition frequency
I
= 30 mA
C
I
= 3 A __ IB = 0.3 A
C
I
= 10 A _ IB = 2.5 A
C
= 3 A ___ V
I
C
I
= 10 A __ V
C
= 1 A___ V
I
C
I
= 3 A ___ V
C
= 0.5 A_ V
I
C
CE
CE
CE
CE
CE
f = 1 kHz
= 0.5 A_ V
I
C
CE
f = 1 MHz
100 V
= 4 V
= 4 V
= 4 V
= 4 V4020
= 10 V
= 10 V
1
4
1.6
3
V
V
V
V
100
3
3MHz
Resistive load
t
on
t
s
t
1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%.
Turn-on time
Storage time
f
Fall time
V
CC
I
B1
tp = 20 µs
= 30 V IC = 6 A
= -I
= 0.6 A V
B2
BB
= -6 V
0.6
0.4
1
µs
µs
µs
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Package mechanical data TIP34C
3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in
ECOPACK® packages. These packages have a Lead-free second level
interconnect . The category of second level interconnect is marked on the package
and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box
label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com
4/7

TIP34C Package mechanical data
TO-247 Mechanical data
Dim.
Min. Typ Max.
A4.855.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S 5.50
mm.
5/7

Revision history TIP34C
4 Revision history
Table 5. Document revision history
Date Revision Changes
01-Oct-1999 2
20-Feb-2008 3 Package change from TO-218 to TO-247.
6/7

TIP34C
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