Datasheet THBT200S1 Datasheet (SGS Thomson Microelectronics)



THBT200S1

ApplicationSpecific Discretes

A.S.D.

FEATURES

DUALBIDIRECTIONAL CROWBAR
PROTECTION.

PEAK PULSECURRENT :

= 35 A, 10/1000 µs.

-I

PP

HOLDINGCURRENT= 150mAmin
BREAKDOWNVOLTAGE= 200 V min.
BREAKOVERVOLTAGE= 290V max.
MONOLITHICDEVICE.

DESCRIPTION

This monolithic protection device has been espe­ciallydesignedto protectsubscriberlinecards.The
THBT200Sdeviceis particularlysuitableto protect
ring generator relay against transient overvol­tages.

TRANSIENT VOLTAGE SUPPRESSOR

FOR SLIC PROTECTION

SIP3

COMPLIESWITHTHE FOLLOWINGSTANDAR DS:
CCITTK20 :

10/700µs 1kV
5/310µs 25A

VDE0433 : 10/700µs 2kV

µs 45A(*)

5/310

VDE0878 : 1.2/50

µs 1.5kV

1/20 µs 40A

FCCpart 68 : 2/10 µs 2.5kV

2/20µs 80A(*)

BELLCORE
TR-NWT-001089: 2/10 µs 2.5kV

2/10µs 80A
10/1000µs 1kV
10/1000µs 35A(*)

(*)with series resistors or PTC.

TM: ASD istrademarks of SGS-THOMSON Microelectronics.

February 1998 Ed:2

SCHEMATICDIAGRAM

NC

Tip

GND

Ring

1

2

3

4

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THBT200S1

ABSOLUTE MAXIMUMRATINGS(T

amb

=25°C)

Symbol Parameter Value Unit

I

I

TSM

T

T

T

Note 1 : Pulse waveform :

Peak pulsecurrent (see note 1)

PP

10/1000

8/20
2/10

µs
µs

µs

35
70

80
Non repetitivesurge peakon-state current tp= 20ms 20 A
Storageand operatingjunction temperaturerange

stg

Maximumjunctiontemperature

j

Maximumlead temperaturefor solderingduring 10s 230 °C

L

%I

10/1000µstr=10µst
5/310µst
2/10µst

=5µst

r

=2µst

r

=1000µs

p

=310µs

p

=10µs

p

PP

100

50

0

t

rp

- 40 to + 150
+ 150

t

THERMAL RESISTANCE

A

°C

t

Symbol Parameter Value Unit

R

th (j-a)

Junctionto ambient 80 °C/W

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

THBT200S1

ELECTRICAL CHARACTERISTICS

Symbol Parameter

V

I

RM

V
V

I

I

BO

I

PP

Stand-offvoltage

RM

Leakagecurrentat V
Continuousreverse voltage

BR

Breakovervoltage

BO

Holdingcurrent

H

Breakovercurrent
Peakpulse current

RM

(T

amb

=25°C)

I

I

BO

IRM

I

pp

I

H

V

RM

C Capacitance

1 - PARAMETERSRELATED TO ONE TRISIL.(BetweenTIP and GNDor RINGand GND)

I

RM

@V

RM

VBR@I

R

V

BO @IBO

I

H

VBR

V

V

BO

C

max. min. max. min. max. min. max.

note1 note2 note 3

µA V V mA V mA mA mA pF

10 180 200 1 290 150 800 150 200

Note 1 : See reference test circuit 1 for IH,IBOand VBOparameters.
Note 2 : See test circuit 2.
Note 3 : VR= 1V, F = 1MHz.

2 - PARAMETERSRELATED TO
TIPand RING TRISIL.

I

RM

@V

RM

C

max. max.

µAVpF

10 180 200

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

THBT200S1

REFERENCETEST CIRCUIT 1 FOR IBOandVBOparameters:

t

TESTPROCEDURE:

PulseTest duration(tp = 20ms):

-For Bidirectionaldevices = SwitchK is closed

-For Unidirectionaldevices = SwitchK is open.
Selection

V

OUT

-Device withV

-V

- Devicewith V

-V

BO

OUT

BO

OUT

< 200 Volt

=250 V

≥ 200 Volt

=480 V

RMS,R1

RMS,R2

=140 Ω.

= 240Ω.

FUNCTIONALHOLDING CURRENT (IH) TEST CIRCUIT 2.

R

D.U.T.

V

= - 48 V

BAT

Thisis a GO-NOGOTestwhich allowsto confirmthe holdingcurrent (I
testcircuit.

TESTPROCEDURE :

1) Adjustthe current levelat the I

2) Firethe D.U.Twith a surge Current : Ipp = 10A , 10/1000µs.

3) TheD.U.T will comeback off-statewithin 50 ms max.

valueby shortcircuiting the AK of the D.U.T.

H

Surge generator

) levelin a functional

H

-V

P

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

APPLICATIONCIRCUIT
Typicalline cardprotection concept

RING

GENERATOR

-V

bat

THBT200S1

LINEA

LINE B

PTC

T
E
S
T

R
E
L
A
Y

S

PTC

TH BT200S 1

FUNCTIONAL DESCRIPTION

Line A TIP

TIP

RING

RELAY

SLIC

RING

THDTxxx

or

LCPxxx

LINE A AND LINE B PROTECTION.

Each line (TIP and RING) is protected by a bidi­rectionalTrisil, which triggers at a maximumvolt­age equal tothe V

BO

.

The differentialmodeis alsoassured at V

BO

.

LineB

Ring

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

THBT200S1

Fig.1 :Relative variationof holding current versus

junctiontemperature.

IH[Tj]

IH[Tj=25°C]

1.0

0.8

0.6

0.4

0.2
T

(°C)

j

0.0

0 20 40 60 80 100 120 140

Fig.3 : Peak on statevoltageversus peakon state

current(typical values).

Fig. 2 : Surge peak current versus overload dura­tion.

I (A)TSM

30

25

20

15

10

5

0
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

F=50Hz
Tj initial=25°C

Fig. 4 : Capacitance versus reverse applied volt­age(typical values).

1000

100

10

1 10 100 200

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

ORDERCODE

THBT 200 S 1

BIDIRECTIONALTRISIL

BREAKDOWNVOLTAGE

MARKING:

Package Types Marking

SIP3 THBT200S1 TBT200S1

PACKAGEMECHANICALDATA

SIP3 Plastic

B

I

a2

b1

Z

e

e3

a1

L

b2

Packaging:Productssupplied in antistatic tubes.
Weight: 0.55g

A

c1

THBT200S1

35A VERSION

Package:

S= SIP3

REF. DIMENSIONS

Millimetres Inches

Min. Typ. Max. Min. Typ. Max.

A 7.10 0.280
a1 2.80 0.110
a2 1.50 1.90 0.059 0.075

B 10.15 0.400
b1 0.50 0.020
b2 1.35 1.75 0.053 0.069
c1 0.38 0.50 0.015 0.020

e 2.54 0.100
e3 7.62 0.200

I 10.50 0.413
L 3.30 0.130
Z 1.50 0.059

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information norfor any infringement of patentsor other rights of third parties which may result from its use. No
license is grantedby implicationor otherwise under any patentor patent rights ofSGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto change without notice. This publicationsupersedes and replacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized foruse as criticalcomponents in life support devices or systemswithoutexpress
written approval of SGS-THOMSON Microelectronics.

 1998 SGS-THOMSON Microelectronics - Printed inItaly - Allrights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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