Datasheet THBT200S Datasheet (SGS Thomson Microelectronics)



THBT200S

ApplicationSpecific Discretes

A.S.D.

FEATURES

DUALBIDIRECTION ALCROWBARPROTECTION.
PEAK PULSECURRENT :

-I

= 75 A, 10/1000 µs.

PP

HOLDINGCURRENT = 150 mA min
BREAKDOWNVOLTAGE=200Vmin.
BREAKOVERVOLTAGE= 290V max.
MONOLITHICDEVICE.

DESCRIPTION

This monolithic protection device has been espe­ciallydesignedto protectsubscriberline cards.The
THBT200 device is particularly suitable to protect
ring generator relay against transient overvol­tages.

TRANSIENT VOLTAGE SUPPRESSOR

FOR SLIC PROTECTION

SIP3

COMPLIESWITHTHE FOLLOWINGSTANDARDS:
CCITTK20:

10/700µs 1kV
5/310µs 25A

VDE0433: 10/700µs 2kV

µs 50A

5/310

VDE0878: 1.2/50

µs 1.5kV

1/20 µs 40A

FCCpart68 : 2/10 µs 2.5kV

2/20µs 225A(*)

BELLCORE
TR-NWT-001089: 2/10 µs 2.5kV

2/10µs 225A(*)
10/1000µs 1kV
10/1000µs 75A(*)

(*)with series resistorsor PTC.

TM: ASDis trademarks of SGS-THOMSON Microelectronics.

February 1998 Ed:2

SCHEMATICDIAGRAM

NC

Tip

GND

Ring

1

2

3

4

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THBT200S

ABSOLUTE MAXIMUM RATINGS(T

amb

=25°C)

Symbol Parameter Value Unit

I

PP

I

TSM

Peakpulse current(see note 1) 10/1000 µs

µs

5/310

µs

8/20
2/10

µs

Nonrepetitivesurge peak on-statecurrent

tp= 20ms 30 A

75
125
150
225

(F= 50Hz)

T

T

T

Note 1: Pulse waveform:

Storagetemperaturerange

stg

Maximumjunction temperature

j

Maximumlead temperatureforsolderingduring 10s 230 °C

L

10/1000µstr=10µst
5/310µst
2/10µst

=1000µs

=5µst

r

=2µst

r

p

=310µs

p

=10µs

p

%I

100

50

0

PP

t

rp

- 40 to + 150
150

t

°C

A

t

THERMAL RESISTANCE

Symbol Parameter Value Unit

R

th (j-a)

Junctionto ambient 80 °C/W

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

THBT200S

ELECTRICALCHARACTERISTICS

Symbol Parameter

V

I

RM

V
V

I

I

BO

I

PP

Stand-offvoltage

RM

Leakagecurrent at V
Continuousreversevoltage

BR

Breakovervoltage

BO

Holdingcurrent

H

Breakovercurrent
Peakpulse current

RM

(T

amb

=25°C).

I

I

pp

I

BO

I

H

I

RM

V

RMVBR

C Capacitance

PARAMETERS RELATEDTO ONE TRISIL(BetweenTIPandGNDorRINGand GND)

@V

I

RM

RM

VBR@I

R

V

BO @IBO

I

H

V

V

BO

C

max. min. max. min. max. min. max.

note1 note2 note 3

A V V mA V mA mA mA pF

µ

10 180 200 1 290 150 800 150 200

Note 1: See referencetest circuit 1 for IBOandVBOparameters.
Note 2: See testcircuit 2.
Note 3:VR=1V, F =1MHz.

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

THBT200S

REFERENCETESTCIRCUIT 1 FORIBOandVBOparameters:

t

TESTPROCEDURE:

PulseTestduration (tp = 20ms):

-ForBidirectionaldevices= SwitchK is closed

-ForUnidirectionaldevices= SwitchK is open.
V

Selection

OUT

-DevicewithV

-V

- Devicewith V

-V

BO

OUT

BO

OUT

< 200 Volt

=250V

≥ 200 Volt

=480V

RMS,R1

RMS,R2

=140Ω.

= 240Ω.

FUNCTIONALHOLDINGCURRENT(IH) TESTCIRCUIT2.

R

D.U.T.

V

= - 48 V

BAT

Thisisa GO-NOGOTestwhichallowsto confirmtheholdingcurrent (I
testcircuit.

TESTPROCEDURE :

1) Adjustthecurrentlevel at theI

2) Firethe D.U.Twitha surgeCurrent: Ipp = 10A , 10/1000µs.

3) TheD.U.Twill comebackoff-state within50msmax.

valueby short circuitingthe AKoftheD.U.T.

H

Surge generator

)levelina functional

H

-V

P

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

APPLICATIONCIRCUIT
Typicalline cardprotection concept

RING

GENERATOR

-V

THBT200S

bat

LINE A

PTC

T
E
S
T

R
E
L
A
Y

S

LINE B

PTC

FUNCTIONAL DESCRIPTION

Line A

THBT200S

Tip

TIP

RING

RELAY

SLIC

RING

THDTxxx

or

LCPxxx

LINE A AND LINEB PROTECTION.

Each line (TIP and RING) is protected by a bidi­rectionalTrisil, which triggers at amaximumvolt­age equal totheV

BO

.

Line B

Ring

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

THBT200S

Fig. 1 : Relativevariationof holding currentversus

junctiontemperature.

Fig. 2

: Surgepeak current versus overload dura-

tion.

IH[Tj]

I

=25°C]

H[Tj

1.0

0.8

0.6

0.4

0.2
T

(°C)

j

0.0

0 20 40 60 80 100 120 140

Fig.3 : Peakonstatevoltageversuspeak on state

current(typicalvalues).

I (A)TSM

40

F=50Hz
Tj initial=25°C

30

20

10

0
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

Fig. 4 : Capacitanceversus reverse applied volt-

age (typicalvalues).

1000

100

6/7

10

1 10 100 200



ORDERCODE

BIDIRECTIONALTRISIL

BREAKDOWNVOLTAGE

MARKING :

Package Types Marking

SIP3 THBT200S THBT200S

THBT200S

THBT 200 S

PACKAGE:
S = SIP3

PACKAGEMECHANICAL DATA

SIP3 Plastic

B

I

a2

b1

Z

Packaging:
Weight:

0.55g

e

e

3

Productssuppliedin antistatictubes.

a1

L

b2

c1

REF. DIMENSIONS

Millimetres Inches

Min. Typ. Max. Min. Typ. Max.

A 7.10 0.280

a1 2.80 0.110

A

a2 1.50 1.90 0.059 0.075

B 10.15 0.400
b1 0.50 0.020
b2 1.35 1.75 0.053 0.069

c1 0.38 0.50 0.015 0.020

e 2.54 0.100
e3 7.62 0.200

I 10.50 0.413
L 3.30 0.130
Z 1.50 0.059

Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information norfor any infringement ofpatentsor other rights of third parties which may resultfrom itsuse. No
license is grantedby implicationor otherwise underany patentor patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in thispublication are subjectto changewithoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized foruseas criticalcomponents inlife supportdevicesor systems withoutexpress
written approval of SGS-THOMSONMicroelectronics.

 1998 SGS-THOMSON Microelectronics - Printed inItaly- Allrights reserved.

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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