Datasheet THBT27011D, THBT20011D, THBT16011D, THBT15011D Datasheet (SGS Thomson Microelectronics)



THBTxxx11D

ApplicationSpecific Discretes

A.S.D.

FEATURES

BIDIRECTIONALCROWBARPROTECTION
BETWEENTIP AND GND, RINGANDGND
ANDBETWEENTIP AND RING.

PEAKPULSECURRENT:

=30Afor 10/1000µs surge.

I

PP

HOLDINGCURRENT:

I

= 150mA.

H

AVAILABLEIN SO8 PACKAGES.
LOW DYNAMICBREAKOVERVOLTAGE.

DESCRIPTION

Dedicated to telecommunication equipment
protection, these devices provide a triple
bidirectionalprotection function.
They ensure the same protection capability with
the same breakdown voltage both in longitudinal
modeandtransversalmode.

A particularattentionhas beengiven to theinternal
wire bonding.The ”4-point”configurationensures
a reliable protection, eliminating overvoltages
introduced by the parasitic inductances of the
wiring (Ldi/dt), especially for very fast transient
overvoltages.

Dynamic characteristics have been defined for
several types of surges, in order to meetthe SLIC
maximumratings.

TRIPOLAR OVERVOLTAGE

PROTECTION FOR TELECOM LINE

SO8

SCHEMATIC DIAGRAM

TIP

GND

GND

1
2
3

8 TIP

GND

7

GND

6

COMPLIESWITHTHEFOLLOWINGSTANDARDS:
CCITTK20: 10/700µs 1.5kV

5/310µs 20A(*)

VDE0433:

VDE0878:

CNET: 0.5/700µs 1.5kV

FCCpart68 : 2/10µs 2.5kV

BELLCORE
TR-NWT-001089:

(*)With series resistors or PTC.

September 1998 - Ed: 5A

10/700µs 2kV
5/310µs 20A(*)

1.2/50µs 1.5kV
1/20µs 20A(*)

0.2/310µs 20A(*)

2/10µs 40A(*)

2/10µs 2.5kV
2/10µs 40A(*)

RING

TM: ASDis trademarks ofSGS-THOMSON Microelectronics.

4

5

RING

1/9

THBTxxx11D

ABSOLUTE MAXIMUM RATINGS

(T

amb

=25°C)

Symbol Parameter Value Unit

I

PP

I

TSM

T

stg

T

j

T

L

Note 1 : Pulsewaveform :

Peak pulsecurrent (seenote 1) 10/1000µs30 A
Non repetitivesurge peak on-statecurrent

(F=50Hz)
Storagetemperaturerange

Maximumoperatingjunctiontemperature

tp= 10 ms

t=1s

8

3.5

- 40 to+ 150
+ 150

Maximumleadtemperature forsolderingduring 10s 260 °C

10/1000µst

%I

100

50

0

=10µst

r

PP

t

r

=1000µs

p

t

p

t

A

°C
°C

TESTCIRCUITS FORI

PP

Longitudinal mode

TIP

R

/2

I

See test
circuit 3

RING

PP

/2

I

PP

P

R

P

THBT

GND

Transversalmode

See test
circuit 3

TIP or

RING

I

PP

R

P

THBT

GND

THERMALRESISTANCES

Symbol Parameter Value Unit

R

th (j-a)

Junctionto ambient 170 °C/W

2/9

THBTxxx11D

ELECTRICALCHARACTERISTICS(T

Symbol Parameter

V

RM

I

RM

V

V

BR

V

BO

I

H

I

BO

V
I

PP

Stand-offvoltage
Leakagecurrent at stand-offvoltage
ContinuousReverse voltage

R

Breakdownvoltage
Breakovervoltage
Holdingcurrent
Breakovercurrent
Forwardvoltagedrop

F

Peak pulsecurrent

amb

=25°C)

I

I

PP

I

BO

I

H

I

R

V

V

RM

BR

C Capacitance

STATICPARAMETERS

Type I

THBT15011D

@V

RM

RM

max. max.

µAVµA V V mAmAmA pF

IR@V

note1

R

VBO@I

max.

note 2

BO

I

H

min. max. min

note 3

note4

5 135 50 150 210 50 400 150 80
THBT16011D 5 135 50 160 230 50 400 150 80
THBT20011D 5 180 50 200 290 50 400 150 80
THBT27011D 5 240 50 270 380 50 400 150 80

Note 1: IRmesuared at VRguaranteesVBR>V
Note 2: Measured at 50Hz (1 cycle) test circuit1.
Note 3: See thereference test circuit 2.
Note 4: V

= 1V,F =1MHz.

R

R

V

V

BO

C

max

DYNAMICBREAKOVERVOLTAGES(Transversalmode)

Type Symbol Testconditions

THBT15011D V

BO

10/700µs 1.5kV Rp=10Ω IPP=30A

1.2/50µs 1.5kV R
2/10µs 2.5kV R

THBT16011D V

BO

10/700µs 1.5kV Rp=10Ω IPP=30A

1.2/50µs 1.5kV R
2/10µs 2.5kV R

THBT20011D V

BO

10/700µs 1.5kV Rp=10Ω IPP=30A

1.2/50µs 1.5kV R
2/10µs 2.5kV R

THBT27011D V

BO

10/700µs 1.5kV Rp=10Ω IPP=30A

1.2/50µs 1.5kV R
2/10µs 2.5kV R

Note 5: See test circuit 3 forVBOdynamic parameters; Rpisthe protectionresistor located on theline card.

(seenote5)

=10Ω IPP=30A

p

=62Ω IPP=38A

p

=10Ω IPP=30A

p

=62Ω IPP=38A

p

=10Ω IPP=30A

p

=62Ω IPP=38A

p

=10Ω IPP=30A

p

=62Ω IPP=38A

p

Maximum Unit

240

V
250
260

260

V
270
290

320

V
350
400

390

V
440
480

3/9

THBTxxx11D

TESTCIRCUIT1 forIBOand VBOparameters:

Auto

Transformer

220V/2A

220V

Transfor mer

220V/800V

5A

TESTPROCEDURE:

PulseTestduration(tp = 20ms):

- For Bidirectionaldevices= SwitchK isclosed

- For Unidirectionaldevices= SwitchK isopen.
V

Selection

OUT

- DevicewithV

-V

- DevicewithV

-V

BO

OUT

OUT

< 200 Volt

= 250V

≥ 200 Volt

BO

= 480 V

V

out

RMS,R1

RMS,R2

static
relay.

= 140Ω.

=240Ω.

= 20ms

tp

K

I

BO

measure

R1

140

R2

240

D.U.T

V

BO

measure

TESTCIRCUIT2 forI

V

= - 48 V

BAT

This is a GO-NOGOtest whichallowsto confirmthe holdingcurrent (IH) level in a functional
test circuit.

TESTPROCEDURE:

1) Adjustthe currentlevel at the I

2) Fire theD.U.Twitha surgeCurrent: Ipp= 10A, 10/1000 µs.

3) The D.U.Twill comebackoff-state within50 msmax.

parameter.

H

R

D.U.T .

valueby shortcircuitingtheAKof the D.U.T.

H

-V

P

Surge generator

4/9

THBTxxx11D

TESTCIRCUIT 3 for I

(V is defined in no loadcondition)P

and VBOparameters:

PP

L

R

R

4

TIP

2

RING

R

3

V

CC

P

1

R

1

2

GND

Pulse(µs) V

t

r

t

p

p

(V) (µF) (nF) (µH) (Ω)(Ω)(Ω)(Ω) (A) (Ω)

C

1

C

2

LR

1

R

2

R

3

R

4

IPPR

10 700 1500 20 200 0 50 15 25 25 30 10

1.2 50 1500 1 33 0 76 13 25 25 30 10
2 10 2500 10 0 1.1 1.3 0 3 3 38 62

p

5/9

THBTxxx11D

Fig. 1:

Surge peak current versus overload dura-

tion.

I (A)TSM

10

9
8
7
6
5
4
3
2
1
0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

t(s)

F=50Hz
Tjinitial=25°C

APPLICATIONNOTE

1

Connectpins 2, 3,6 and 7 to Groundin
orderto guaranteea good surgecurrent
capabilityforlongduration disturbances.

TIP

1

8

TIP

2 In orderto take advantageofthe”4-point ”

structureof theTHBT, the TIP and RING
lineshave tocrossthedevice.In thiscase,
the devicewilleliminate the overvoltages
generatedby theparasiticinductancesof
the wiring(Ldi/dt),especially forveryfast
transients.

GND

RING

2

7

GND

3

4

6

5

RING

6/9

APPLICATIONCIRCUIT :
1 - Line card protection

RING

GENERATOR

THBTxxx11D

-V

BA T

LINE A

LINE B

T
E
S

T

R
E
L
A
Y

S

PTC

RING
RELAY

THBTxxxD

PTC

2 - Protectionfor telephoneset withgroundkey

LA

LCP1511D

OOK

H

220

nF

PEECH

S

IALING

D

SLIC

LB

E

THBTxxxD

ROUND KEY

G

RINGER

7/9

THBTxxx11D

ORDERCODE

BIDIRECTIONAL
TRISIL

THBT 150 1 1 D RL

PACKAGING:

RL = tapeandreel.

=tube.

LOWDYNAMIC
CHARACTERISTICS.

BREAKDOWN
VOLTAGE

MARKING

Types Package Marking

THBT15011D SO8 BT151D
THBT16011D SO8 BT161D
THBT20011D SO8 BT201D
THBT27011D SO8 BT271D

PACKAGEMECHANICAL DATA.

SO8 Plastic

L

A

a2

b

8

1

e

e3

D

M

5

4

S

F

c1

C

a

1

E

Packaging : Productssupplied in antistatic tubes
or tape andreel.

VERSION

MARKING :

REF. DIMENSIONS

A 1.75 0.069

a3

a1 0.1 0.25 0.004 0.010
a2 1.65 0.065

b

1

b 0.35 0.48 0.014 0.019

b1 0.19 0.25 0.007 0.010

C 0.50 0.020

c1 45°(typ)

D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 3.81 0.150

F 3.8 4.0 0.15 0.157

L 0.4 1.27 0.016 0.050

M 0.6 0.024

S8°(max)

PACKAGE:

1 = SO8Plastic.

Logo, DateCode, Part Number.

Millimetres Inches
Min. Typ. Max. Min. Typ. Max.

Weight:

8/9

0.077g

THBTxxx11D

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use ofsuch informationnor forany infringementof patentsor other rights of thirdparties which mayresult fromits use.No license isgrantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publicationsupersedes and replaces all informationpreviously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval ofSTMicroelectronics.

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 1998STMicroelectronics - Printed in Italy - Allrights reserved.

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