Datasheet TF94432H, TF94430H, TF94435H, TF94434H Datasheet (DYNEX)

TF944..H

TF944..H

Fast Switching Thyristor

Replaces March 1998 version, DS4281-3.2 DS4281-4.0 January 2000

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ Railway Traction

■ Induction Heating

■ AC Motor Drives

■ Cycloconverters

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Voltage

VOLTAGE RATINGS

Type Number

TF944 35H
TF944 34H
TF944 32H
TF944 30H

Repetitive

Peak
Voltages
V

DRM VRRM

3500

3400

3200

3000

V
I

DRM

at V

Conditions

= V

RSM

RRM

= I

RRM

or V

RRM

+ 100V

= 100mA

& T

DRM

KEY PARAMETERS

V

DRM

I

T(RMS)

I

TSM

dV/dt 500V/

3500V

1350A

13000A

µs

dI/dt 500A/µs
t

q

vj

120µs

Lower voaltage grades available.

CURRENT RATINGS

Symbol

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

Outline type code: MU169

See Package Details for further information.

Parameter Conditions Max. Units

Half sinewave, 50Hz, T

Half sinewave, 50Hz, T

case

case

= 80oC

= 80oC

850

1350

A

A

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TF944..H

SURGE RATINGS

Symbol

I

TSM

I2t 845 x 10

Surge (non-repetitive) on-state current

2

t for fusing

I

Parameter Conditions Max. Units

10ms half sine; VR = 0% V

10ms half sine; VR = 0% V

, Tj = 125˚C 13.0 kA

RRM

, Tj = 125˚C

RRM

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

T

vj

Parameter

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Double side cooled

Single side cooled

Clamping force 23.5kN
with mounting compound

On-state (conducting) - 135

Reverse (blocking)

Conditions Min. Max. Units

dc

Cathode dc - ­Double side

Single side

- 0.02

0.006

-

- 0.012

125

-

3

A2s

o

C/W

o

C/W--Anode dc

o

C/W

o

C/W

o

C/W

o

C

o

C

T

stg

-

Storage temperature range

Clamping force 22.3 24.6 kN

MEASUREMENT OF RECOVERED CHARGE - Q

Measurement of Q

I

TM

tp = 1ms

dIR/dt

RA1

: Q

= IRR x t

RA1

Q

I

RR

2

RA1

0.5x I

RR

RR

RA1

-40 150

o

C

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DYNAMIC CHARACTERISTICS

TF944..H

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 1500A peak, T

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

Gate source 20V, 20Ω

dI/dt

Rate of rise of on-state current

tr ≤ 0.5µs, Tj = 125˚C

V

T(TO)

r

T

t

gd

(ON)TOT

I

H

I

H

q

RR

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

T

Delay time

Total turn-on timet

= 25˚C, IT = 50A,

j

V

= 300V, IG = 1A,

D

dI/dt = 50A/µs, dI

Holding current Tj = 25oC, ITM = 1A, VD = 12V 100* - mA

Holding current Tj = 25oC, IG = 0.5A, VD = 12V 300* - mA

Turn-off timet

Tj = 125˚C, IT = 500A, VR = 100V,
dV/dt = 20V/µs to 66% V

Reverse recovery chargeQ

dIR/dt = 50A/µs.

*Typical value.

, T

case

DRM Tj

= 25oC

case

= 125oC

= 125oC, Gate open circuit

Repetitive 50Hz

Non-repetitive

/dt = 1A/µs

G

t

DRM

,

q

code: H

Min. Max. Units

- 2.4 V

- 100 mA

- 500 V/µs

- 500 A/µs

- 800 A/µs

1.35-V

- 0.5 mΩ

--*µs

--*µs

120- µs

-- µC

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol Parameter Conditions

V

P

V

V

V
V

P

GT

I

GT

GD

FGM

FGN

RGM

FGM

GM

G(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage
Peak forward gate voltage

Peak forward gate voltage

= 12V, T

DRM

V

= 12V, T

DRM

At V

DRM Tcase

Anode positive with respect to cathode

Anode negative with respect to cathode

Peak reverse gate voltage V5.0-

Peak forward gate current

Anode positive with respect to cathode

Peak gate power

Mean gate power

= 25oC, RL = 6Ω

case

= 25oC, RL = 6Ω

case

= 125oC, RL = 1kΩ

Typ.

-

-

-

-

-

-

-

Max.

Units

3.0

250

0.25
30

0.25 V

10I

50

3.0

V

mA

VV
V

A-

W

W

3/7

TF944..H

CURVES

5000

Measured under pulse conditions

4000

- (A)

T

3000

Tj = 125˚C

2000

Instantaneous on-state current, I

1000

0

0 1.0 2.0 3.0 4.0

- (V)

T

IT = 400A

IT = 800A

1000

- (A)

R

100

Instantaneous on-state voltage, V

Fig.1 Maximum (limit) on-state characteristics

Conditions:
T

= 125˚C

j

t

= 700µs

p

V

= 100V

R

IT = 3000A

IT = 100A

Reverse current, I

10

1 10 100 1000

Rate of rise of on-state current, dI/dt - (A/µs)

Fig.2 Reverse current vs rate of rise of on-state current

4/7

TF944..H

100000

Measurement conditions of Q

tp = 1ms

10000

- (µC)

RA1

1000

Recovered charge, Q

100

1 10 100 1000

Rate of rise of on-state current, dI/dt - (A/µs)

Fig.3 Recovered charge vs rate of rise of on-state current

I

TM

dIR/dt

RA1

Q

RA1

0.5I

RR

I

RR

Conditions:

= 125˚C

T

j

= 700µs

t

p

= 100V

V

R

IT = 3000A

IT = 800A

IT = 400A

IT = 100A

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TF944..H

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6 x 2.1 approx (one in each electrode)

Cathode tab

Ø74 max

Ø46 min

Ø1.5

Gate

Ø46 min

Ø68 max

Nominal weight: 500g

Clamping force: 23.5kN ±10%

Lead length: 250mm

Package outine type code: MU169

Cathode

26 ± 1

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Gate triggering and the use of gate characteristics AN4840
Recommendations for clamping power semiconductors AN4839
The effect of temperature on thyristor performance AN4870
Thyristor and diode measurement with a multi-meter AN4853
Turn-on performance of thyristors in parallel AN4999
Use of V

, rT on-state characteristic AN5001

TO

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TF944..H

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [e-mail]

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DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4281-4 Issue No.4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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