Datasheet TF91320C, TF91318C, TF91316C Datasheet (DYNEX)

TF913..C

TF913..C

Fast Switching Thyristor

Replaces March 1998 version, DS4278-2.2 DS4278-3.0 January 2000

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ Railway Traction

■ Induction Heating

■ AC Motor Drives

■ Cycloconverters

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Voltage

VOLTAGE RATINGS

Type Number

TF913 20C
TF913 18C
TF913 16C

Repetitive

Peak
Voltages
V

DRM VRRM

2000

1800

1600

V

I

Conditions

= V

RSM

RRM

= I

DRM

RRM

+ 100V

= 60mA

KEY PARAMETERS

V

DRM

I

T(RMS)

I

TSM

dV/dt 300V/

2000V

1300A

17000A

µs

dI/dt 500A/µs
t

q

50µs

Lower voltage grades available.

CURRENT RATINGS

Symbol

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

at V

or V

RRM

Parameter Conditions Max. Units

DRM

& T

vj

Half sinewave, 50Hz, T

Half sinewave, 50Hz, T

Outline type code: MU169.

See Package Details for further information.

case

case

= 80oC

= 80oC

828

1300

A

A

1/13

TF913..C

SURGE RATINGS

Symbol

I

TSM

I2t 1445 x 10

Surge (non-repetitive) on-state current

2

t for fusing

I

Parameter Conditions Max. Units

10ms half sine; VR = 0% V

10ms half sine; VR = 0% V

, Tj = 125˚C 17.0 kA

RRM

, Tj = 125˚C

RRM

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

T

vj

Parameter

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Double side cooled

Single side cooled

Clamping force 23.5kN
with mounting compound

On-state (conducting) - 125

Reverse (blocking)

Conditions Min. Max. Units

dc

Cathode dc - ­Double side

Single side

- 0.020

0.006

-

- 0.012

125

-

3

A2s

o

C/W

o

C/W--Anode dc

o

C/W

o

C/W

o

C/W

o

C

o

C

T

stg

-

Storage temperature range

Clamping force 22.3 24.6 kN

MEASUREMENT OF RECOVERED CHARGE - Q

Measurement of Q

I

TM

tp = 1ms

dIR/dt

RA1

: Q

= IRR x t

RA1

Q

I

RR

2

RA1

0.5x I

RR

RR

RA1

-40 150

o

C

2/13

DYNAMIC CHARACTERISTICS

TF913..C

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 2000A peak, T

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

Gate source 20V, 20Ω

dI/dt

Rate of rise of on-state current

tr ≤ 0.5µs, Tj = 125˚C

V

T(TO)

r

T

t

gd

(ON)TOT

I

H

I

L

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC
Delay time

Total turn-on timet

Tj = 25˚C, IT = 50A,
V

= 300V, IG = 1A,

D

dI/dt = 50A/µs, dI

Holding current Tj = 25oC, ITM = 1A, VD = 12V 100* - mA

Latching current Tj = 25oC, IG = 0.5A, VD = 12V 300* - mA

Tj = 125˚C, IT = 250A, VR = 50V,

q

Turn-off timet

dV/dt = 20V/µs (Linear to 60% V
dIR/dt = 50A/µs, Gate open circuit

, T

case

DRM Tj

= 25oC

case

= 125oC

= 125oC, Gate open circuit

Repetitive 50Hz

Non-repetitive

/dt = 1A/µs

G

t

q

),

DRM

code: C

Min. Max. Units

- 2.15 V

-60mA

- 300 V/µs

- 500 A/µs

- 800 A/µs

1.25-V

- 0.45 mΩ

4* µs

-

2* - µs

50- µs

*Typical value.

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

I

GT

V

GD

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 12V, T
= 12V, T

DRM Tcase

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power

Mean gate power

ConditionsParameterSymbol

= 25oC, RL = 6Ω

case

= 25oC, RL = 6Ω

case

= 125oC, RL = 1kΩ

Typ. Max. Units

- 3.0 V

- 200 mA

- 0.2 V

- 5.0 V

-10A

-50W

-3W

3/13

TF913..C

CURVES

4/13

TF913..C

5/13

TF913..C

NOTES:

1. VD ≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

≤ 600V.

1. V

D

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

6/13

NOTES:

1. VD ≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF913..C

NOTES:

1. dI/dt = 25A/µs
≤ 600V.

2. V

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

7/13

TF913..C

NOTES:

1. dI/dt = 25A/µs
≤ 600V.

2. V

D

≤ 10V.

3. V

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 25A/µs
≤ 600V.

2. V

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

8/13

NOTES:

1. dI/dt = 50A/µs
≤ 600V.

2. V

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF913..C

NOTES:

1. dI/dt = 50A/µs
≤ 600V.

2. V

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

9/13

TF913..C

NOTES:

1. dI/dt = 50A/µs
≤ 600V.

2. V

D

≤ 10V.

3. V

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 100A/µs
≤ 600V.

2. V

D

≤ 10V.

3. V

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

10/13

NOTES:

1. dI/dt = 100A/µs
≤ 600V.

2. V

D

≤ 10V.

3. V

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF913..C

NOTES:

1. dI/dt = 100A/µs
≤ 600V.

2. V

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

11/13

TF913..C

PACKAGE DETAILS - MU169

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6 x 2.1 approx (one in each electrode)

Cathode tab

Ø74 max

Ø46 min

Ø1.5

Gate

Ø46 min

Ø68 max

Nominal weight: 500g

Clamping force: 23.5kN ±10%

Lead length: 250mm

Package outine type code: MU169

Cathode

26 ± 1

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Gate triggering and the use of gate characteristics AN4840
Recommendations for clamping power semiconductors AN4839
The effect of temperature on thyristor performance AN4870
Thyristor and diode measurement with a multi-meter AN4853
Turn-on performance of thyristors in parallel AN4999
Use of V

, rT on-state characteristic AN5001

TO

Anode

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TF913..C

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4278-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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