Datasheet TF70914Y, TF70914B, TF70912Y, TF70912B, TF70910Y Datasheet (DYNEX)

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APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ Railway Traction

■ Induction Heating

■ AC Motor Drives

■ Cycloconverters

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Voltage

VOLTAGE RATINGS

KEY PARAMETERS

V

DRM

1400V

I

T(RMS)

900A

I

TSM

12000A

dV/dt 300V/

µs

dI/dt 500A/µs
t

q

25µs

Conditions

V

RSM

= V

RRM

+ 100V

I

DRM

= I

RRM

= 40mA

at V

RRM

or V

DRM

& T

vj

Repetitive

Peak
Voltages
V

DRM VRRM

Type Number

1400

1200

1000

800
600

Lower voltage grades available.

TF709 14Y
TF709 12Y
TF709 10Y
TF709 08Y
TF709 06Y

Outline type code: MU171.

See Package Details for further information.

CURRENT RATINGS

Parameter Conditions Max. Units

Mean on-state current

RMS value

Half sinewave, 50Hz, T

case

= 80oC

Half sinewave, 50Hz, T

case

= 80oC

573

900

A

A

Symbol

I

T(AV)

I

T(RMS)

TF709..Y

Fast Switching Thyristor

Replaces March 1998 version, DS4277-2.2 DS4277-3.0 January 2000

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SURGE RATINGS

Parameter Conditions Max. Units

I

2

t for fusing

10ms half sine; VR = 0% V

RRM

, Tj = 125˚C 12.0 kA

A2s

Surge (non-repetitive) on-state current

10ms half sine; VR = 0% V

RRM

, Tj = 125˚C

Symbol

I

TSM

I2t 720 x 10

3

THERMAL AND MECHANICAL DATA

dc

Conditions Min. Max. Units

o

C/W- 0.072Anode dc

Clamping force 10.0kN
with mounting compound

Thermal resistance - case to heatsink

R

th(c-h)

0.01

Double side

-

125

o

C

T

vj

Virtual junction temperature

T

stg

Storage temperature range

Reverse (blocking)

Single side

-

Thermal resistance - junction to case

R

th(j-c)

Single side cooled

Symbol

Parameter

Clamping force 14.25 15.75 kN

-40 150

o

C

-

On-state (conducting) - 125

o

C

- 0.02

o

C/W

o

C/W

Cathode dc - 0.096

o

C/W

Double side cooled

- 0.04

o

C/W

MEASUREMENT OF RECOVERED CHARGE - Q

RA1

0.5x I

RR

I

RR

Q

RA1

tp = 1ms

I

TM

dIR/dt

Measurement of Q

RA1

: Q

RA1

= IRR x t

RR

2

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DYNAMIC CHARACTERISTICS

V

TM

ParameterSymbol Conditions

Maximum on-state voltage At 2000A peak, T

case

= 25oC

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

, T

case

= 125oC

Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125˚C

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

DRM Tj

= 125oC, Gate open circuit

Min. Max. Units

- 2.05 V

-40mA

- 300 V/µs

Repetitive 50Hz

- 500 A/µs

Non-repetitive

- 800 A/µs

Rate of rise of on-state current

dI/dt

V

T(TO)

Threshold voltage At Tvj = 125oC

r

T

On-state slope resistance At Tvj = 125oC

1.25-V

- 0.4 mΩ

Delay time

t

gd

- 1.5* µs

Total turn-on timet

(ON)TOT

- 3.5* µs

Tj = 25˚C, IT = 50A,
V

D

= 300V, IG = 1A,

dI/dt = 50A/µs, dI

G

/dt = 1A/µs

*Typical value.

I

H

Holding current Tj = 25oC, ITM = 1A, VD = 12V 100* - mA

Tj = 125˚C, IT = 250A, VR = 50V,
dV/dt = 20V/µs (Linear to 60% V

DRM

),

dIR/dt = 50A/µs, Gate open circuit

Turn-off timet

q

25- µs

t

q

code: Y

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

DRM

= 12V, T

case

= 25oC, RL = 6Ω

ConditionsParameterSymbol

V

GT

Gate trigger voltage V

DRM

= 12V, T

case

= 25oC, RL = 6Ω

I

GT

Gate trigger current

V

GD

Gate non-trigger voltage At V

DRM Tcase

= 125oC, RL = 1kΩ

- 3.0 V

- 200 mA

- 0.2 V

Typ. Max. Units

V

RGM

Peak reverse gate voltage

I

FGM

Peak forward gate current Anode positive with respect to cathode

P

GM

Peak gate power

P

G(AV)

Mean gate power

- 5.0 V

-10A

-50W

-3W

I

L

Latching current Tj = 25oC, IG = 0.5A, VD = 12V 300* - mA

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CURVES

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NOTES:

1. VD ≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. V

D

≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF709..Y

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NOTES:

1. VD ≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 25A/µs

2. V

D

≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

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NOTES:

1. dI/dt = 25A/µs

2. V

D

≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 25A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF709..Y

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NOTES:

1. dI/dt = 50A/µs

2. V

D

≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 50A/µs

2. V

D

≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF709..Y

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NOTES:

1. dI/dt = 50A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 100A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF709..Y

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NOTES:

1. dI/dt = 100A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 100A/µs

2. V

D

≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

TF709..Y

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PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Weight: 310g

2 holes Ø3.6x2.0 deep (in both electrodes)

Ø34 nom

26 ± 1

Ø1.5

Cathode

Gate

Anode

Ø34 nom
Ø54 max

Ø57.8 max

Nominal weight: 310g

Clamping force: 15kN ±10%

Lead length: 250mm

Package outine type code: MU171

Cathode tab

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Gate triggering and the use of gate characteristics AN4840
Recommendations for clamping power semiconductors AN4839
The effect of temperature on thyristor performance AN4870
Thyristor and diode measurement with a multi-meter AN4853
Turn-on performance of thyristors in parallel AN4999
Use of V

TO

, rT on-state characteristic AN5001

TF709..Y

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POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

CUSTOMER SERVICE CENTRES

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North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone] / Tel: [phone]. Fax: [phone].
UK, Germany, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4277-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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