Datasheet tea6200 DATASHEETS (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TEA6200
Integrated AM upconversion receiver
Product specification File under Integrated Circuits, IC01
August 1989
Page 2
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200

GENERAL DESCRIPTION

The TEA6200 is an integrated AM upconversion receiver circuit with an IF of 10.7 MHz. Because of the high dynamic range of the RF prestage there is no tuned prestage. The whole selectivity is provided by crystal filters. The circuit is intended for use in AM radios with synthesizer tuning. The TEA6200 can handle RF signals up to 2 V RMS.

Features

• No pre-tuned selection is required
• No LW/MW switching
• RF input is protected from static discharge from the aerial
• Electronic standby switch
• Voltage controlled oscillator for synthesizer tuning
• IF output providing level information for search tuning.
• No alignment required.

QUICK REFERENCE DATA

PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Supply voltage range V Supply current range I
P
P
7.6 8.5 9.4 V
− 50 70 mA
AF output voltage with:
RF at 1 MHz and 10 mV f
at 400 Hz and 30% V
m
AGC start V AGC range ∆V
af rf
rf
− 350 − mV 30 50 80 µV
− 95 − dB

PACKAGE OUTLINE

20-lead dual in line; plastic (SOT146); SOT146-1; 1996 August 02.
Page 3
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200
Fig.1 Block diagram.
Page 4
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200

PINNING

1 SWD switching delay 2 MXI mixer input 3 MXO1 mixer output 1 4 MXO2 mixer output 2 5V
P
6 LVO level output 7 AGC AGC time constant 8V
ref
9 OSC oscillator 10 n.c. not internally connected 11 IFO IF output 12 AFO AF output 13 DTI detector input 14 STB standby switch 15 IFI1 IF input 1 16 IFI2 IF input 2 17 GND ground 18 SPO switched prestage output 19 PRI prestage input 20 PRO prestage output
supply voltage
reference voltage
*
Fig.2 Pinning diagram.
* Pin 10 must be connected to pin 5, 8 or 17.
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Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)
PARAMETER SYMBOL MIN. MAX. UNIT
Supply voltage V Supply current I Total power dissipation P Operating ambient temperature range T Storage temperature range T Electrostatic discharge voltage ±V

THERMAL RESISTANCE

P
P
tot amb stg
es
− 12 V
− 70 mA
− 850 mW
−30 + 85 °C
−40 + 150 °C
− 10 kV
From junction to ambient R
Will tolerate discharge between −10 kV and +10 kV.
= 80 K/W
th j-a
Fig.3 Test circuit in accordance with IEC 315-1 clause 25.
Page 6
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200

DC CHARACTERISTICS

V
= 8.5 V; V14 = VP; Signal in OFF condition; all voltages referenced to ground unless otherwise specified.
P
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Mixer input V Mixer output 1 V Mixer output 2 V Level output V AGC voltage V Reference voltage V Oscillator DC voltage V Prestage input V Prestage output V
I O O O AGC ref OSC I O

CHARACTERISTICS

= 8.5 V; T
V
P
= 25 °C; fRF= 1 MHz at 10 mV RMS; Q
amb
= 50; modulation = 400 Hz at 30%; insertion loss of filters:
OSC
crystal filter = 1 dB; ceramic filter = 4 dB, all voltages referenced to ground unless otherwise specified.
− 4.0 − V
− 8.5 − V
− 8.5 − V
− 8.5 − V
− 0.65 − V
− 4.0 − V
− 4.0 − V
− 1.2 − V
− 3.2 − V
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Supply
Supply voltage range V Supply current range I Guaranteed operating voltage V
Standby switch
ON voltage V OFF voltage V ON current |I OFF current −I Supply current device OFF I
Prestage
note 1
Switching threshold modulation
= 80% V
Hysteresis V
Oscillator
Frequency range f Oscillator amplitude V Tuned circuit selectivity Q
Mixer
Input capacitance C Input impedance Z Conversion transconductance I
P
P
P
14 14
| −−10 µA
14
14
P
rf rf
osc
osc
OSC
2-8 2-8
3-4/V2-8
7.6 8.5 9.4 V
− 50 70 mA
7.0 − 10.0 V
3.2 − V
P
0 − 1V
−−0.5 mA
−−10 mA
− 320 − mV
1.5 3.5 5.5 dB
10.8 − 17.8 MHz 200 420 − mV 20 50 −−
− 510pF 10 40 − kΩ
− 3.8 − S
V
Page 7
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
IF amplifier
Input impedance R Input capacitance C Output impedance Z
Detector
note 2
Input impedance Z Output impedance Z Output level V
Reference voltage
Voltage V
= 8.5 V V
P
Output impedance Z Ripple rejection
16-15 16-15 11
13 12 af
8 8
∆V
---------- ­∆V
10 −−kΩ
−−5pF 230 330 430 Ω
265 380 500 Ω 7 1014kΩ 250 350 500 mV
3.8 4.0 4.2 V
− 20 −Ω
P
40 −−dB
8
Level output pin 6
see Fig.5
Output impedance Z Output voltage V Output voltage V
= 70 µVV
rf
= 2 mV V
rf
RF sensitivity
RF input (S + N)/N = 6 dB V
(S + N)/N = 26 dB V (S + N)/N = 46 dB V RF = 150 kHz (S + N)/N = 26 dB V
Output signal
AF output voltage V
Total distortion V
= 10 mV V
rf
V
= 20 µVVaf− 100 − mV
rf
= 1 mV;
rf
modulation = 80% d
Signal plus noise-to-noise
RF = 10 mV to 1 V (S + N)/N 53 57 − dB
ratio Ripple rejection V
= 8.5 V + V
P
r
20 Hz < fR < 20 kHz V
= 40 mV
rms
6 6 6
rf rf rf
rf
af
tot
∆ V
P
-----------­∆ V
af
− 1 − kΩ
0.5 0.7 1.0 mV
− 15 − mV
− 11 20 µV
− 110 150 µV
− 1100 2000 µV
− 200 −µV
250 350 500 mV
− 35%
20 −−dB
Page 8
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200
PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
Large signal handling
Aerial input voltage THD = 10%;
modulation = 80% V
rf
AGC range of preamplifier switch
Switching threshold modulation = 80% V Hysteresis modulation = 80% V Ripple rejection of preamplifier 20 Hz < f
< 1.5 MHz
R
AGC
rf rf
------------ -
∆V
∆V
20
AGC range − 95 − dB Change of V
af
AGC start V
100 µV < Vrf < 2 V − 23dB
rf
Intermodulation free
dynamic range
Long wave 350/250 kHz
second order input noise level
= −99 dBm I MFDR 2 72 82 − dB
third order input noise level
= −99 dBm I MFDR 3 − 86 − dB
Medium wave 650/1550 kHz
second order input noise level
= −104 dBm I MFDR 2 74 84 − dB
third order 1.25/1.4 MHz
input noise level = −104 dBm I MFDR 3 − 90 − dB
23−V
− 12 − dB
− 320 − mV
1.5 3.5 5.5 dB
− 40 − dB
P
30 50 80 µV
Notes to the characteristics
1. The prestage is connected to the aerial by a 6 MHz low-pass filter that decouples unwanted aerial cable resonance frequencies. The large dynamic range of the prestage is achieved by use of a transimpedance amplifier with a feedback loop consisting of an equivalent aerial capacitance and a feedback capacitor. When large RF signals are received the feedback capacitance in the loop is increased and the gain subsequently reduced, (see Fig.4).
C
ae
V
V
rf
×=
rf
×=
--------­C
C
-------------------­C1C2+
1
ae
Voltage gain for small signals
Voltage gain for large signals
G
V
G
V
2. To protect the demodulator and the AGC circuitry, against parasitic oscillation in the IF section, a ceramic filter is connected between the IF output and detector input.
Page 9
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200
Fig.4 Prestage circuit.
Fig.5 IF output level.
Page 10
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200
Fig.6 Signal plus noise-to-noise ratio. Fig.7 Total harmonic distortion.
APPLICATION INFORMATION Notes Fig. 8.
COMPONENT CIRCUIT IDENTITY SUPPLIER REFERENCE
(1) Crystal filters XTAL NDK 10T 7 BA (2) Ceramic filter SFE Murata E 10 7 S (3) Transformer T1 Toko 7PS-1078 JK (4) Variable capacitance diode. D1 BB609, BB809 or BBY40 (5) Oscillator coil L1 Toko 7PS-1077 X
August 1989 10
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August 1989 11
APPLICATION INFORMATION
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200
Fig.8 Application diagram.
Page 12
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200

PACKAGE OUTLINE

DIP20: plastic dual in-line package; 20 leads (300 mil)
D
seating plane
L
Z
20
pin 1 index
e
b

SOT146-1

M
E
A
2
A
A
1
w M
b
1
11
E
c
(e )
1
M
H
1
0 5 10 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
A
A
UNIT
inches
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
max.
mm
OUTLINE VERSION
SOT146-1
1 2
min.
max.
1.73
1.30
0.068
0.051
IEC JEDEC EIAJ
b
b
1
0.53
0.38
0.021
0.015
0.36
0.23
0.014
0.009
REFERENCES
cD E e M
(1) (1)
26.92
26.54
1.060
1.045
SC603
August 1989 12
6.40
6.22
0.25
0.24
10
(1)
M
e
L
1
3.60
8.25
3.05
7.80
0.14
0.32
0.12
0.31
EUROPEAN
PROJECTION
H
E
10.0
0.2542.54 7.62
8.3
0.39
0.010.10 0.30
0.33
ISSUE DATE
w
92-11-17 95-05-24
Z
max.
2.04.2 0.51 3.2
0.0780.17 0.020 0.13
Page 13
Philips Semiconductors Product specification
Integrated AM upconversion receiver TEA6200
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our
“IC Package Databook”
Soldering by dipping or by wave
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.

DEFINITIONS

(order code 9398 652 90011).
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
stg max
). If the
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1989 13
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