Datasheet tea5757, tea5759 DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA5757; TEA5759

Self Tuned Radio (STR)

Product specification
Supersedes data of 1996 Jan 09
File under Integrated Circuits, IC01

1999 Aug 26

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

FEATURES

• The tuningsystem has an optimized IC partitioning both
from application (omitting interferences) and flexibility
(removable front panel option) point of view: the tuning
synthesizer is on-chip with the radio

• Thetuning quality issuperior and requiresno IF-counter
for stop-detection; it is insensitive to ceramic filter
tolerances

• In combination with the microcontroller, fast, low-power
operation of preset mode, manual-search, auto-search
and auto-store are possible

• Thelocal (internal) controller functionfacilitatesreduced
and simplified microcontroller software

• The high integration level (radio and tuning synthesizer
on one chip) means fewer external components with
regard to the communication between the radio and the
microcontroller (90% less components compared to the
digital tuning application of a radio IC with external PLL
tuning function) and a simple and small printed-circuit
board

• Therewill be no applicationconsiderationsfor the tuning
system, with regards to quality and high integration
level, since there will be no external 110 MHz buffers,
loop filter or false lock elimination

• The inherent FUZZY LOGIC behaviour of the Self
Tuned Radio (STR), whichmimics hand tuning, yields a
potentially fast yet reliable tuning operation

• The level of the incoming signal at which the radio must
lock is software programmable

• Two programmable ports

• High selectivity with distributed IF gain

• Soft mute

• Signal dependent stereo-blend

• High impedance MOSFET input on AM

• Wide supply voltage range of 2.5 to 12 V

• Low current consumption 18 mA at AM and FM

(including tuning synthesizer)

• High input sensitivity

• Low output distortion

• Due to the new tuning concept, the tuning is

independent of the channel spacing.

GENERAL DESCRIPTION

The TEA5757; TEA5759 is a 44-pin integrated AM/FM
stereo radio circuit including a novel tuning concept.
The radio part is based on the TEA5712.

The TEA5757 is used in FM-standards in which the local
oscillator frequency is above the radio frequency
(e.g. European and American standards).

The TEA5759 is the version in which the oscillator
frequency is below the radio frequency
(e.g. Japanese standard).

Thenew tuning conceptcombinesthe advantages ofhand
tuning with electronic facilities and features. User
‘intelligence’ is incorporated into the tuning algorithm and
animprovementofthe analog signal processing isusedfor
the AFC function.

ORDERING INFORMATION

TYPE NUMBER

TEA5757H QFP44 plastic quad flat package;44 leads (lead length 1.3 mm); body
TEA5759H

1999 Aug 26 2

NAME DESCRIPTION VERSION

10 × 10 × 1.75 mm

PACKAGE

SOT307-2

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC1

V

CC2

V

tune

I

CC1

I

DD

I

CC2

T

amb

AM performance; note 1
V

10

V

i1

THD total harmonic distortion V
FM performance; note 2
V

10

V

i5

THD total harmonic distortion IF filter

MPX performance; note 3

α

cs

supply voltage 2.5 − 12 V
supply voltage for tuning −−12 V
tuning voltage 0.7 − V

− 0.75 V

CC2

supply current AM mode 12 15 18 mA

FM mode 13 16 19 mA

supply current AM mode − 3.3 − mA

FM mode − 2.7 − mA

supply current for tuning in preset

−−800 µA

mode (band-end to band-end)
ambient temperature −15 − +60 °C

AF output voltage Vi1=5mV 364570 mV
RF sensitivity input voltage (S+N)/N = 26 dB 40 55 70 µV

=1mV − 0.8 2.0 %

i1

AF output voltage Vi5=1mV 404857 mV
RF limiting sensitivity V10at −3 dB;

0.4 1.2 3.8 µV

V10is 0 dB at Vi5=1mV

− 0.3 0.8 %

SFE10.7MS3A20K-A

channel separation 26 30 − dB

Notes

1. V

2. V

3. V

=3V;V

CC1

in position B; Vn refers to pin voltages; V

=3V; V

CC1

CC2

CC2

=12V;V

= 12 V; V

=3V;fi= 1 MHz; m = 0.3; fm= 1 kHz; measured in Fig.9 with S1 in position A andS2

DDD

refers to test circuit (see Fig.9).

i(n)

=3V; fi= 100 MHz; ∆fm= 22.5 kHz; fm= 1 kHz; measured in Fig.9 with S2, S3

DDD

and S5 in position A; Vn refers to pin voltages; V

CC1

=3V; V

CC2

= 12 V; V

DDD

=3V; V

i3(L + R)

refers to test circuit (see Fig.9).

i(n)

= 155 mV; V

and S3 in position B.

1999 Aug 26 3

= 15.5 mV; fi= 1 kHz; measured in Fig.9 with S2

pilot

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1999 Aug 26 4

BLOCK DIAGRAM

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

FM-RFI

RFGND

DATA

BUS-CLOCK

WRITE-ENABLE

V

STAB(A)

V

STAB(B)

V

CC1

V

DDD

RIPPLE

XTAL

DGND

AM-RFI

FM-RFO

43

FM

42

FRONT-END

28
27
29

38
34
7

STABILIZER

23
1

PRESCALER

MULTIPLEXER

25

CRYSTAL

26

OSCILLATOR

31

P1

30

P0

AM

2

FRONT-END

FMOSC

FM

OSCILLATOR

SHIFT REGISTER

LAST-STATION

PROGRAMMABLE

AM

OSCILLATOR

MEMORY

COUNTER

WINDOW

DETECTOR

FM-IFI1 FM-IFI2

FM-MIXER

FM

MIXER

FM

AM

AM

MIXER

FM-IFO1

FM
IF1

STATUS

REGISTER

SEQUENTIAL

CIRCUIT

AM

IF

down
level

AGC

IFGND FSIFMDEM

21

181739 37 333535

16

PILFIL

24

MO/ST

12

LFI

9

VCO

14

AFLO
AFRO

15

13

MUTE

19

AFC
AFC
AFC

(n)
(p)

20
32

AM

FM

DETECTOR

TEA5757;

TEA5759

FM
IF2

AM/FM

INDICATOR

up

IN-LOCK

DETECTOR

CHARGE

PUMP

hard mute

AFC

DETECTOR

19 kHz

38 kHz

stereo

level

CONVERTER

PILOT

DETECTOR

PLL

DECODER

stereo

MATRIX

mono

SDS

MUTE

V/I

6

40 41

AM-MIXERAMOSC

36 44

AM-IFI/O2

AM-IFI1

Fig.1 Block diagram.

AGC

handbook, full pagewidth

TUNE

822

AFO

V

CC2

10

MPXI

11

4

RFGND

MHA111

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PINNING

SYMBOL PIN DESCRIPTION

RIPPLE 1 ripple capacitor input
AM-RFI 2 AMRF input
FM-RFO 3 parallel tuned FMRF circuit to ground
RFGND 4 RF ground and substrate
FMOSC 5 parallel tuned FM-oscillator circuit to ground
AMOSC 6 parallel tuned AM-oscillator circuit to ground
V

CC1

TUNE 8 tuning current output
VCO 9 voltage controlled oscillator input
AFO 10 AM/FM AF output (output impedance typical 5 kΩ)
MPXI 11 stereo decoder input (input impedance typical 150 kΩ)
LFI 12 loop-filter input
MUTE 13 mute input
AFLO 14 left channel output (output impedance typical 4.3 kΩ)
AFRO 15 right channel output (output impedance typical 4.3 kΩ)
PILFIL 16 pilot detector filter input
IFGND 17 ground of IF, detector and MPX stage
FMDEM 18 ceramic discriminator input
AFC

(n)

AFC

(p)

FSI 21 field-strength indicator
V

CC2

V

DDD

MO/ST 24 mono/stereo and tuning indication output
XTAL 25 crystal input
DGND 26 digital ground
BUS-CLOCK 27 bus-clock input
DATA 28 bus data input/output
WRITE-ENABLE 29 bus write-enable input
P0 30 programmable output port (P0)
P1 31 programmable output port (P1)
AFC 32 450 kHz LC-circuit
FM-IFI2 33 FMIF input 2 (input impedance typical 330 Ω)
V

STAB(B)

FM-IFO1 35 FMIF output 1 (output impedance typical 330 Ω)
AM-IFI/O2 36 input/output to IF-Tank (IFT); output: current source
FM-IFI1 37 FMIF input 1 (input impedance typical 330 Ω)
V

STAB(A)

FM-MIXER 39 ceramic filter output (output impedance typical 330 Ω)
AM-MIXER 40 open-collector output to IFT

7 supply voltage

19 AFC negative output
20 AFC positive output

22 supply voltage for tuning
23 digital supply voltage

34 internal stabilized supply voltage (B)

38 internal stabilized supply voltage (A)

1999 Aug 26 5

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

SYMBOL PIN DESCRIPTION

AM-IFI1 41 IFT or ceramic filter input (input impedance typical 3 kΩ)
RFGND 42 FMRF ground
FM-RFI 43 FMRF aerial input (input impedance typical 40 Ω)
AGC 44 AGC capacitor input

handbook, full pagewidth

RIPPLE

AM-RFI

FM-RFO

RFGND
FMOSC

AMOSC

V

CC1

TUNE

VCO

AFO

MPXI

AGC

FM-RFI

RFGND

AM-IFI1

AM-MIXER

44

43

42

41

40

1
2
3
4
5

14

AFLO

TEA5757H
TEA5759H

15

16

AFRO

PILFIL

6
7
8

9
10
11

12

13

LFI

MUTE

STAB(A)

FM-MIXER

V

39

38

17

18

IFGND

FMDEM

FM-IFI1
37

19

(n)

AFC

AM-IFI/O2
36

20

(p)

AFC

STAB(B)

FM-IFO1

V

35

34

21

22

FSI

CC2

V

33

FM-IFI2

32

AFC

31

P1

30

P0

29

WRITE-ENABLE

28

DATA
BUS-CLOCK

27
26

DGND

25

XTAL

24

MO/ST

23

V

DDD

MHA112

Fig.2 Pin configuration.

1999 Aug 26 6

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

FUNCTIONAL DESCRIPTION

The TEA5757; TEA5759 is an integrated AM/FM stereo
radio circuit including digital tuning and control functions.

The radio

The AM circuit incorporates a double balanced mixer,
a one-pin low-voltage oscillator (up to 30 MHz) and is
designed for distributed selectivity.

The AM input is designed to be connected to the top of
a tuned circuit. AGC controls the IF amplification and for
large signals it lowers the input impedance of the
AM front-end.

The first AM selectivity can be an IF-Tank (IFT) as well as
an IFT combined with a ceramic filter; the second one is
an IFT.

The FM circuit incorporates a tuned RF stage, a double
balanced mixer, a one-pin oscillator and is designed for
distributed IF ceramic filters. The FM quadrature detector
uses a ceramic resonator (or LC).

The PLL stereo decoder incorporates a signal dependent
stereo-blend circuit and a soft-mute circuit.

Tuning

The tuning concept of the Self Tuned Radio (STR) is
based on FUZZY LOGIC: it mimics hand tuning (hand
tuning is a combination of coarse and fine tuning to the
qualitatively best frequency position). As a consequence
the tuning system is very fast.

The tuning algorithm, which is controlled by the sequential
circuit (see Fig.1), is completely integrated; so there are
only a few external components needed.

The bus and the microcontroller can be kept very simple.
The bus only consists of three wires (BUS-CLOCK, DATA
and WRITE-ENABLE). The microcontroller must basically
give two instructions:

• Preset operation

• Search operation.

PRESET OPERATION
Inpreset mode, themicrocontroller has toload information

suchas frequency band,frequency and mono/stereo.This
information has to be sent via the bus to the STR.
The internal algorithm controls the tuning sequence as
follows:

1. The information is loaded into the shift register, the
last-station memory and the counter.

2. The Automatic Frequency Control (AFC) is
switched off.

3. The counter starts counting the frequency and the
tuning voltage is varied until the desired frequency
roughly equals the real frequency.

4. The AFC is then switched on and the counter is
switched off.

5. The real frequency is more precisely tuned to the
desired frequency.

After the AFC has tuned the real frequency to the desired
frequency an in-lock signal can be generated. In order to
get a reliable in-lock signal, there are two parameters
measured: the field strength and the S-curve. The field
strength indicates the strength of the station and by
looking at the S-curve the system can distinguish false
in-locks from real in-locks (false in-locks occur on the
wrong slope of the S-curve).

In the event of fading orpulling thein-lock signal becomes
logic 0 and the synthesizer will be switched on again and
the algorithm will be repeated.

SEARCH OPERATION
During a search operation, the only action the

microcontroller has to take is: sending the desired band
plus the direction and the search sensitivity level to the
STR. The search operation is performed by the charge
pump until an in-lock signal is generated (combination of
measuring the field strength and the S-curve). The AFC
then fine tunes to the station. The frequency belonging to
thefound station willbecounted by the counterand written
into the last-station memory and the shift register of the
counter. At this time the frequency is available in the shift
register and can be read by the microcontroller.
The microcontroller decides whether the frequency is
withinthedesired frequency band. Ifso,thisfrequency can
be stored under a preset and if not, a new search action
should be started.

To ensure that the search function operates correctly
under all conditions the following search sequence must
be applied:

• Store the current frequency in the memory

• Issue the search command

• Wait for data valid and read the new frequency

• If the new frequency is the same as the stored

frequency, issue a pre-set step (e.g. 50 kHz) and start
the search sequence again.

1999 Aug 26 7

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

Description of the bus

The TEA5757; TEA5759radio has abus whichconsists of
three wires, as shown in Table 1.

Table 1 Bus signals

SIGNAL DESCRIPTION PIN

BUS-CLOCK software driven clock input 27
DATA data input/output 28
WRITE-ENABLE write/read input 29

These three signals, together with the mono/stereo pin
(MO/ST; pin 24), communicate with the microcontroller.
The mono/stereo indicator has two functions, which are
controlled by the BUS-CLOCK, as shown in Table 2.

Table 3 Explanation of the shift register bits

BIT DESCRIPTION

S.24 (MSB) search start/end 0 after a search when a station is found or after a preset

D.23 search up/down 0 indicates if the radio has to search down

M.22 mono/stereo 0 stereo is allowed

B0.21 band see Table 4 selects FM/MW/LW/SW band
B1.20
P0.19 port note 1 user programmable bits which e.g. can be used as band
P1.18
S0.17 search-level of station see Table 5 determines the locking field strength during an
S1.16
15 dummy − buffer
F.14 to F.0 (LSB) frequency − determine the tuning frequency of the radio; see Table 6

LOGIC

STATE

1 during the search action

1 indicates if the radio has to search up

1 mono is required (radio switched to forced mono)

Table 2 Bus-clock functions

BUS-CLOCK MO/ST (PIN 24) RESULT

LOW LOW stereo
LOW HIGH mono
HIGH LOW tuned
HIGH HIGH not tuned

The TEA5757; TEA5759 has a 25-bit shift register;
see Table 3 for an explanation of the shift register bits.

If in search mode no transmitter can be found, all
frequency bits of the shift register are set to logic 0.

The bus protocol is depicted in Figs 3 and 4.

RESULT

switch driver

automatic search, automatic store or manual search

for the bit values

Note

1. The output pins 30 and 31 can drive currents up to 5 mA; bits P0.19 and P1.18 control the output voltage of the
control pins P0 (pin 30) and P1 (pin 31):

a) Bit P0.19 LOW sets P0 (pin 30) to LOW.
b) Bit P0.19 HIGH sets P0 (pin 30) to HIGH.
c) Bit P1.18 LOW sets P1 (pin 31) to LOW.
d) Bit P1.18 HIGH sets P1 (pin 31) to HIGH.

1999 Aug 26 8

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

Table 4 Truth table for bits B0.21 and B1.20

B0.21 B1.20 BAND SELECT

00FM
01MW
10LW
11SW

Table 5 Truth table for bits S1.16 and S0.17

SIGNAL RECEPTION

S1.16 S0.17

FM

(µV)

0 0 >5 >28
0 1 >10 >40
1 0 >30 >63
1 1 >150 >1000

AM

(µV)

Table 6 Values for bits F.14 to F.0

BIT BIT VALUEFMVALUE

(1)

(kHz)

F.14 2
F.13 2
F.12 2
F.11 2
F.10 2

F.9 2
F.8 2
F.7 2
F.6 2
F.5 2
F.4 2
F.3 2
F.2 2
F.1 2
F.0 2

14
13
12
11
10

9
8
7
6
5
4
3
2
1
0

− 16384

102400 8192

51200 4096
25600 2048
12800 1024

6400 512
3200 256
1600 128

800 64
400 32
200 16
100 8

50 4
25 2

12.5 1

Notes

1. FM value of the affected oscillators:
a) FM VALUE = FMRF + FMIF (for TEA5757).
b) FM VALUE = FMRF − FMIF (for TEA5759).

2. AM value of the affected oscillators:
AM VALUE = AMRF + AMIF.

AM

VALUE

(kHz)

(2)

1999 Aug 26 9

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

READING DATA
While WRITE-ENABLE is LOW data can be read by the

microcontroller. At a rising edge of the BUS-CLOCK, data
is shifted out of the register. This data is available from the
point where the BUS-CLOCK is HIGH until the next rising
edge of the BUS-CLOCK occurs (see Fig.3).

To read the entire shift register 24 clock pulses are
necessary.

handbook, full pagewidth

WRITE-ENABLE

BUS-CLOCK

DATA

data shiftdata available after search ready

MSB is LOW

WRITING DATA
While WRITE-ENABLE is HIGH the microcontroller can

transmit data to the TEA5757; TEA5759 (hard mute is
active). At a rising edge of the BUS-CLOCK, the register
shifts and accepts one bit into LSB. At clock LOW the
microcontroller writes data (see Fig.4).

To write the entire shift register 25 clock pulses are
necessary.

data read

data available

MBE817

handbook, full pagewidth

WRITE-ENABLE

BUS-CLOCK

DATA

Fig.3 Read data.

MBE818

data changedata shift

Fig.4 Write data.

1999 Aug 26 10

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

BUS TIMING

handbook, full pagewidth

WRITE-ENABLE

V

BUS-CLOCK

DATA

t

HIGHtLOW

IH

V

IL

t

da

Fig.5 Bus timing.

Table 7 Digital inputs

SYMBOL PARAMETER MIN. MAX. UNIT

Digital inputs

V

IH

V

IL

HIGH-level input voltage 1.4 − V
LOW-level input voltage − 0.6 V

Timing

f

clk

t

HIGH

t

LOW

t

da

clock input frequency − 300 kHz
clock HIGH time 1.67 −µs
clock LOW time 1.67 −µs
shift register available after ‘search ready’ − 14 µs

MBE819

1999 Aug 26 11

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CC1

P

tot

T

stg

T

amb

T

j

V

es

Note

1. Charge device model; equivalent to discharging a 200 pF capacitor via a 0 Ω series resistor.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

supply voltage 0 13.2 V
total power dissipation T

=70°C − 250 mW

amb

storage temperature −65 +150 °C
ambient temperature −15 +60 °C
junction temperature −15 +150 °C
electrostatic handling voltage for all pins note 1 −±200 V

thermal resistance from junction to ambient in free air 65 K/W

1999 Aug 26 12

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

CHARACTERISTICS

V

=3V; T

CC1

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CC1

V

CC2

V

DDD

V

tune

I

CC2

f

BUS-CLOCK(max)

I

CC1

I

DD

I

CC1

I

DD

t

search

t

acq

f

band

∆f

FM

∆f

AM

I

P0(sink)

I

P1(sink)

I

P0(source)

I

P1(source)

=25°C; unless otherwise specified.

amb

supply voltage 2.5 − 12 V
supply voltage for tuning −−12 V
supply voltage for digital part 2.5 − 12 V
tuning voltage 0.7 − V
supply current for tuning in

−−800 µA

CC2

− 0.75 V

preset mode (band-end to
band-end)

maximum BUS-CLOCK

−−300 kHz

frequency
current consumption during

acquisition of V

CC1

current consumption during
acquisition of I

DD

current consumption after
acquisition of V

CC1

current consumption after
acquisition of I

DD

synthesizer auto-search time for

AM mode 12 15 18 mA
FM mode 12.5 15.5 18.5 mA
AM mode − 4.8 − mA
FM mode − 5.5 − mA
AM mode 12 15 18 mA
FM mode 13 16 19 mA
AM mode − 3.3 − mA
FM mode − 2.7 − mA
FM mode −−10 s

empty band
synthesizer preset acquisition

time between two band limits

FM − 100 − ms
MW − 100 − ms
LW − 200 − ms
SW − 500 − ms

frequency band range of the
synthesizer

AM mode 0.144 − 30 MHz

FM mode 50 − 150 MHz
AFC inaccuracy of FM −−1 kHz
AFC inaccuracy of AM −−100 Hz
sink current of software

V30=3V 4 6 − mA
programmable output P0

sink current of software

V31=3V 4 6 − mA
programmable output P1

source current of software

V30=0V 5 9 − mA
programmable output P0

source current of software

V31=0V 5 9 − mA
programmable output P1

1999 Aug 26 13

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

AM CHARACTERISTICS

Input frequency fi= 1 MHz; m = 0.3; fm= 1 kHz; measured in test circuit at pin 10 (see Fig.9); S2 in position B;
V

measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input

i1

level; V

V
V
V
PSRR

I
C
G

(S+N)/N signal plus noise-to-noise ratio − 50 − dB
THD total harmonic distortion Vi1=1mV − 0.8 2.0 %

α

refers to pin voltages; V

n

refers to test circuit (see Fig.9); unless otherwise specified.

i(n)

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

10
i1
i1

i

i
c

450

AF output voltage Vi1=5mV 364570mV
RF sensitivity input voltage (S+N)/N = 26 dB 40 55 70 µV
large signal voltage handling capacity m = 0.8; THD ≤ 8% 150 300 − mV

∆V

power supply ripple rejection

V

10



----------



∆V

7

= 100 mV (RMS);

7

100 Hz; V7= 3.0 V

−−47 − dB

input current (pin 2) V44= 0.2 V − 0 −µA
input capacitance (pin 2) V44= 0.2 V −−4pF
front-end conversion gain V44= 0.2 V 5 10 14 dB

V

= 0.9 V −26 −14 0 dB

44

IF suppression V10=30mV − 56 − dB

FM CHARACTERISTICS

Input frequency f
V

refers to pin voltages; V

n

= 100 MHz; ∆f = 22.5 kHz; fm= 1 kHz; measured in test circuit (see Fig.9) at pin 10; S2 in position B;

i

refers to test circuit (see Fig.9); unless otherwise specified.

i(n)

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

10

V

i5

V

i5

AF output voltage Vi5=1mV 404857mV
RF sensitivity input voltage (S+N)/N = 26 dB 1 2 3.8 µV
RF limiting sensitivity V10at −3 dB;

0.4 1.2 3.8 µV

V10is 0 dB at Vi5=1mV

V

i5

PSRR

G

c

(S+N)/N signal plus noise-to-noise ratio V
THD total harmonic distortion IF filter

large signal voltage handling capacity THD < 5% − 500 − mV

power supply ripple rejection

front-end conversion gain




V

10



----------



∆V

V

37

-------- ­V

i5

= 100 mV (RMS);

∆V

7

100 Hz; V7= 3.0 V

7

=1mV − 62 − dB

i5

−44 −−dB

12 18 22 dB

− 0.3 0.8 %

SFE10.7MS3A20K-A

1999 Aug 26 14

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

STEREO DECODER CHARACTERISTICS

V

i3(L + R)

maximum channel separation; soft mute off (S4 in position A); unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
V
V
(S+N)/N signal plus noise-to-noise ratio V
THD total harmonic distortion − 0.5 1.0 %

α
α
α
α stereo-blend V

mute(s) soft mute depth V

14/15
pilot(s)
pilot(m)
AF-L/Vi3

cs
19
38

= 155 mV; V

= 15.5 mV; f = 1 kHz; apply unmodulated RF signal of 100 mV to front-end to set radio to

pilot

AF output voltage − 160 − mV
switch to stereo − 812mV
switch to mono 2 5 − mV
MPX voltage gain −1.5 − +1.5 dB

= 15.5 mV (stereo) − 74 − dB

pilot

channel separation 26 30 − dB
carrier and harmonic suppression 19 kHz (200 mV) = 0 dB 27 32 − dB

38 kHz 16 21 − dB

= 200 µV2230−dB

i5

=20µV − 12dB

V

i5

=3µV; V14=V

i5

V

=1µV; V14=V

i5

15
15

−10 − dB

−−6−10 dB

TUNING CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

FM

FM voltage levels α

-point at Vi5=2µV

−3dB

high (auto-store/search) S0 = 1; S1 = 1 60 150 500 µV
medium (auto-store/search) S0 = 0; S1 = 1 10 30 55 µV
low (auto-store/search) S0 = 1; S1 = 0 4 10 20 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 3 5 9 µV

V

AM

AM voltage levels α

-point at Vi5=2µV

−3dB

high (auto-store/search) S0 = 1; S1 = 1 400 1000 2500 µV
medium (auto-store/search) S0 = 0; S1 = 1 50 63 80 µV
low (auto-store/search) S0 = 1; S1 = 0 32 40 50 µV
nominal (preset mode/tuning indication) S0 = 0; S1 = 0 25 28 40 µV

V

AFC(off)

AFC voltage off mode α

-point at Vi5=2µV

−3dB

FM mode − 3 −µV
AM mode − 25 −µV

mute(h) hard mute depth WRITE-ENABLE = HIGH − 60 − dB

1999 Aug 26 15

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1999 Aug 26 16

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

handbook, full pagewidth

10

(dB)

0

−10

−20

−30

−40

−50

−60

−70

−80

−7

10

(dBµV)

(1)

(2)

(3)

−6

10

−5

10

−4

10

−3

10

−2

10

−1

10

Vi1 (V)

120100806040200−20

1

MBE853

9

8

7

6

5

4

3

2

1

0

THD

(%)

(1) Audio signal.
(2) Noise.
(3) Harmonic distortion.

Fig.6 AM mode.

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1999 Aug 26 17

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

10

handbook, full pagewidth

(dB)

0

−10

−20

−30

−40

−50

−60

−70

−80

−7

10

(dBµV)

(1)
(3)

(4)

(5)

(2)

(6)

−6

10

−5

10

−4

10

−3

10

−2

10

−1

10

Vi5 (V)

12010080604020−20 0

MHA115

9

THD

(%)

8

7

6

5

4

3

2

1

0

1

(1) Mono signal.
(2) Noise in mono mode.
(3) Left channel with modulation left.
(4) Right channel with modulation left.
(5) Noise in stereo mode.
(6) Harmonic distortion (measured with ∆f = 75 kHz).

Fig.7 FM mode.

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

INTERNAL CIRCUITRY
Table 8 Equivalent pin circuits and pin voltages

PIN

NO.

PIN

SYMBOL

(V)

AM FM

1 RIPPLE 2.1 2.1

2 AM-RFI 0 0

3 FM-RFO 0 0

DC VOLTAGE

EQUIVALENT CIRCUIT

7

1

3 kΩ

17

4

2

1 kΩ

70 pF

MBE821

MBE822

4 RFGND 0 0
5 FMOSC 0 0

1999 Aug 26 18

220 Ω

43

42

3

5

4

MHA105

MBE823

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

6 AMOSC 0 0

DC VOLTAGE

7V

CC1

3.0 3.0

8 TUNE −−

EQUIVALENT CIRCUIT

6

4

22

8

MBE824

9 VCO 1.3 0.95

10 AFO 0.6 0.7

26

9

17

10

17

MBE825

1 kΩ

10 kΩ

MBE826

5 kΩ

MBE827

1999 Aug 26 19

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

11 MPXI 1.23 1.23

12 LFI 0.1 0.8

DC VOLTAGE

EQUIVALENT CIRCUIT

150 kΩ 150 kΩ

11

9.5 kΩ

17

4 kΩ

12

17

MBE828

13 kΩ

MBE829

13 MUTE 0.7 0.7

14 AFLO 0.65 0.65

13

17

7 kΩ 50 kΩ

14

17

MBE830

5 kΩ

MBE831

1999 Aug 26 20

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

15 AFRO 0.65 0.65

16 PILFIL 0.95 0.95

17 IFGND 0 0
18 FMDEM − 1.0

DC VOLTAGE

EQUIVALENT CIRCUIT

15

5 kΩ

17

16

10 kΩ

17

18

180 Ω

MBE832

10 kΩ

MBE833

910 Ω

19 AFC

(n)

−−

1999 Aug 26 21

17

MBE834

10 kΩ 10 kΩ

19

MHA106

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

DC VOLTAGE

20 AFC

(p)

−−

21 FSI −−

22 V
23 V

CC2
DDD

−−

3.0 3.0

24 MO/ST −−

EQUIVALENT CIRCUIT

10 kΩ 10 kΩ

20

MHA107

1.4 V
40 kΩ

21

12 to 34 kΩ
(dependent on
bits 16 and 17)

26

MBE836

25 XTAL −−

26 DGND 0 0

100 Ω

24

26

25

26

MBE837

50 kΩ50 kΩ50 kΩ

MBE838

1999 Aug 26 22

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

27 BUS-CLOCK −−

28 DATA −−
29 WRITE-ENABLE −−

30 P0 −−

DC VOLTAGE

EQUIVALENT CIRCUIT

27

26

100 Ω

28

50 kΩ

29
26

23

120 Ω

MBE839

100 kΩ

MBE840

100 kΩ

31 P1 −−

1999 Aug 26 23

30

20 kΩ

26

23

120 Ω

31

20 kΩ

26

MHA108

100 kΩ

MHA109

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

32 AFC −−

33 FM-IFI2 − 0.73

DC VOLTAGE

34 V

STAB(B)

1.4 1.4

EQUIVALENT CIRCUIT

34

20 kΩ

32

34

140 Ω

33

2.2 kΩ

17

7

1 kΩ

1

MBE842

6 pF

MBE843

35 FM-IFO1 − 0.69

36 AM-IFI/O2 1.4 1.4

34

34

35

34

36

17

560 Ω

3.6 kΩ 3.6 kΩ

MBE844

MBE845

MBE846

1999 Aug 26 24

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

37 FM-IFI1 − 0.73

DC VOLTAGE

38 V

STAB(A)

1.4 1.4

39 FM-MIXER − 1.0

EQUIVALENT CIRCUIT

38

140 Ω

37

1.9 kΩ

17

7

1 kΩ

1

38

39

680 Ω

6 pF

MBE847

MBE848

30 pF

40 AM-MIXER 1.4 1.4

41 AM-IFI1 1.4 1.4

MHA110

40
38

MBE850

38

3 kΩ

41

17

7.5 kΩ

7.5 kΩ

MBE851

1999 Aug 26 25

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PIN
NO.

PIN

SYMBOL

(V)

AM FM

42 RFGND 0 0
43 FM-RFI − 0.73

44 AGC 0.1 0.7

DC VOLTAGE

EQUIVALENT CIRCUIT

220 Ω

43

42

3

1 kΩ

44

17

1 kΩ

MHA105

1 kΩ

MBE852

1999 Aug 26 26

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1999 Aug 26 27

BB804

BB804

TEST AND APPLICATION INFORMATION

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

TUNE

DATA

BUS-CLOCK

WRITE-ENABLE

V

STAB(A)

V

STAB(B)

V

CC1

GND

TUNE

18 kΩ

100

nF

P1
P0

47 kΩ

22 nF

BB112

(8)

L1

L6

10 Ω

220
nF

75 kHz

10

L8

pF

4.7 nF

(6)

22 pF

(14)

18 pF

(1) L8 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.

(2) L7 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.

(1)

100

µF

(13)

TUNE

25

26

18 kΩ

43

42
28
27
29
38
34

7

23

1

31
30

2

6404136

L2

18 pF

18 pF

470 pF

(3) K1 = SFE10.7MS3, MURATA.
(4) K2 = SFE10.7MS3, MURATA.
(5) K3 = CDA10.7-MG40-A, MURATA.
(6) L6 = 60 nH.
(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(8) L1 = 250 µH ferroceptor.
(9) L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80, TOKO.

(9)

TUNE

10

(2)

L7

pF

K1

(10)

L3

(14)

BB112

V

47 kΩ

STAB(A)

Fig.8 Application diagram.

V

STAB(A)

(3)

TEA5757;
TEA5759

10

µF

(11)

L4

V

STAB(B)

handbook, full pagewidth

V

STAB(B)

(4)

K2

373953

44

10 nF

470 nF

TUNE

3335

822

V

CC2

K3

10

220 nF

330 pF

(5)

100 nF

V

1817

21

11 4

16

24

12

9

12 nF

14

15

12 nF

13

19

20
32

2.2 µF

68 kΩ

MHA113

2.2 kΩ

470 nF

(7)

L5

CC1

(12)

100 nF

100 nF

(12)

10 kΩ

470 nF

470 nF

50 kΩ

MO/ST

left output
right output

4.7 µF

V

STAB(B)

(10) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.
(11) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(12) De-emphasis time constant is 50 µs: C

De-emphasis time constant is 75 µs: C

de-emp
de-emp

= 12 nF.
= 18 nF.

(13) Standard applications: ±30 ppm at 25 °C.

Short wave applications: ±20 ppm at 25 °C.

(14) Alternatively BB512, Siemens or KV1561A, TOKO.

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1999 Aug 26 28

V

BB804

18 kΩ

TUNE

100 MHz

DATA

BUS-CLOCK

WRITE-ENABLE

V

STAB(A)

V

STAB(B)

V

GND

CC1

P1
P0

50 Ω 43 Ω

1 MHz

50 Ω 27 Ω

100

nF

V

i1

10
pF

V

i5

6.8 Ω

560 Ω

10 Ω

220
nF

75 kHz

L8

(1)

(6)

L1

680 pF

TUNE

1 nF

91 Ω

100

µF

(12)

(1) L8 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.

(2) L7 = MC117 E523FN-2000242, 38 pF ±3%,

TOKO.

BB804

18 kΩ

43

42

28
27
29
38
34

7

23

1

25

26

31
30

2

6

L2

18 pF

18 pF

470 pF

(3) K1 = SFE10.7MS3, MURATA.
(4) K2 = SFE10.7MS3, MURATA.
(5) K3 = CDA10.7-MG40-A, MURATA.
(6) L1 = 22281−30091.
(7) L5 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.
(8) L2 = 7P 7DRS-11459N, 110 µH at 796 kHz, Q = 80, TOKO.
(9) L3 = 7P A7MCS-11844N, C = 180 pF, Q = 90, TOKO.
(10) L4 = 7P A7MCS-11845Y, C = 180 pF, Q = 90, TOKO.

(8)

TUNE

10
pF

L3

(13)

BB112

47 kΩ

50 Ω

10.7
MHz

(2)

L7

V

53

41

40

AS1B

(9)

V

STAB(A)

3
kΩ

V

i2

450 kHz

Fig.9 Test circuit.

330 Ω

i4

50 Ω

STAB(A)

TEA5757;
TEA5759

36

10
µF

220
nF

50 Ω

L4

V

STAB(B)

handbook, full pagewidth

(10)

1 nF

B

S5

V

K2

3739

10 nF

470 nF

(4)

TUNE

STAB(B)

822

V

CC2

(5)

K3

100 nF

3335

10

1817

21

16
24

12

9

(11)

14
15

(11)

13

19

470 nF

20
32

S2

S3

5 kΩ

220 nF

11 4

330 pF

V

i3

50 Ω

B

A

A
B

L5

50 Ω

MPX

MHA114

A

(3)

K1

44

(11) De-emphasis time constant is 50 µs: C

De-emphasis time constant is 75 µs: C

2.2 µF

2.2 kΩ

68 kΩ

12
nF

100 nF

12

100 nF

nF

BA

8.2 kΩ

(7)

S4

V

CC1

470 nF

470 nF

50 kΩ

4.7 µF

V

STAB(B)

de-emp
de-emp

(12) Standard applications: ±30 ppm at 25 °C.

Short wave applications: ±20 ppm at 25 °C.

(13) Alternatively BB512, Siemens or KV1561A, TOKO.

10 kΩ

left
output

right
output

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

MO/ST

=12nF.
=18nF.

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

PACKAGE OUTLINE

QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm

c

y

X

A

33 23

34

pin 1 index

44

1

22

Z

E

e

H

E

E

w M

b

p

12

11

A

2

A

A

1

detail X

SOT307-2

(A )

3

θ

L

p

L

w M

b

e

p

D

H

D

Z

D

B

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

mm

A

max.

2.10

0.25

0.05

1.85

1.65

0.25

UNIT A1A2A3b

cE

p

0.40

0.25

0.20

0.14

(1)

(1) (1)(1)

D

10.1

9.9

eH

10.1

9.9

12.9

0.8 1.3

12.3

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

IEC JEDEC EIAJ

REFERENCES

SOT307-2

1999 Aug 26 29

v M

H

v M

D

A

B

E

12.9

12.3

LL

p

0.95

0.55

0.15 0.10.15

EUROPEAN

PROJECTION

Z

D

1.2

0.8

Zywv θ

E

1.2

0.8

o

10

o

0

ISSUE DATE

95-02-04
97-08-01

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

SOLDERING
Introduction to soldering surface mount packages

Thistext gives a verybriefinsightto a complextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages.Wave soldering isnot always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
tothe printed-circuit boardbyscreen printing, stencillingor
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating,soldering andcooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswith leads on foursides,thefootprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement andbefore soldering,the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Wave soldering

Conventional single wave soldering is not recommended
forsurfacemount devices (SMDs) orprinted-circuitboards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Aug 26 30

Philips Semiconductors Product specification

Self Tuned Radio (STR) TEA5757; TEA5759

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

WAVE REFLOW

(1)

BGA, SQFP not suitable suitable

SOLDERING METHOD

HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable

(3)

PLCC

, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

(2)

(3)(4)
(5)

suitable

suitable
suitable

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

.

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

5. Wave soldering is only suitable for SSOP andTSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Aug 26 31

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PTPhilips Development Corporation, SemiconductorsDivision,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

1999

Internet: http://www.semiconductors.philips.com

67

Printed in The Netherlands 545002/03/pp32 Date of release: 1999 Aug 26 Document order number: 9397 750 06058