Datasheet tea1114a DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1114A

Low voltage telephone
transmission circuit with dialler
interface and regulated strong
supply

Product specification
Supersedes data of 1999 Sep 14
File under Integrated Circuits, IC03

2000 Mar 21

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

FEATURES

• Low DC line voltage; operates down to 1.45 V
(excluding voltage drop over external polarity guard)

• Line voltage regulator with adjustable DC voltage

• 3.3 V regulated strong supply point for peripheral

circuits compatible with:
– Speech mode
– Ringer mode
– Trickle mode.

• Transmit stage with:
– Microphone amplifier with symmetrical high

impedance inputs

– DTMF amplifier with confidence tone on receive

output.

• Receive stage with:
– Receive amplifier with asymmetrical output
– Earpiece amplifier with adjustable gain (and gain

boost facility) for all types of earpieces.

• MUTE input for pulse or DTMF dialling

• AGClinelosscompensationformicrophoneandreceive

amplifiers.

APPLICATIONS

• Line powered telephone sets with LCD module

• Cordless telephones

• Fax machines

• Answering machines.

GENERAL DESCRIPTION

The TEA1114A is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between speech and dialling. The IC operates at a line
voltage down to 1.45 V DC (with reduced performance) to
facilitate the use of telephone sets connected in parallel.

When the line current is high enough, a fixed amount of
current is derived from the LN pin in order to create a
strong supply point at pin VDD. The voltage at pin VDD is
regulated to 3.3 V to supply peripherals such as dialler,
LCD module and microcontroller.

TEA1114A

ORDERING INFORMATION

TYPE

NUMBER

TEA1114A DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4
TEA1114AT SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1
TEA1114AUH − bare die; on foil −

NAME DESCRIPTION VERSION

PACKAGE

2000 Mar 21 2

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

QUICK REFERENCE DATA

I

= 15 mA; VEE=0V;R

line

circuits given in Figs 15, 16 and 17; T
specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

V
I
V

line

LN

CC

CC

line current operating range normal operation 11 − 140 mA

DC line voltage 4.05 4.35 4.65 V
internal current consumption VCC= 3.6 V − 1.25 1.5 mA
supply voltage for internal circuitry

(unregulated)

V

DD

regulated supply voltage for peripherals

speech mode I
ringer mode I

I

DD

G

v(TX)

available supply current for peripherals −−−3mA
typical voltage gain for microphone

amplifier

G

∆G
∆G

v(RX)

v(QR)
v(trx)

typical voltage gain for receiving amplifier VIR= 4 mV (RMS) 32.4 33.4 34.4 dB
gain setting range for earpiece amplifier RE1= 100 kΩ−14 − +12 dB
gain control range for microphone and

receive amplifiers with respect to
I

=15mA

line

∆G

v(trx)(m)

gain reduction for microphone and receive
amplifiers

=20Ω;AGC pin connected to VEE;Z

SLPE

=25°C for TEA1114A(T); Tj=25°C for TEA1114AUH; unless otherwise

amb

= 600 Ω; f = 1 kHz; measured according to test

line

with reduced performance 1 − 11 mA

IP=0mA − 3.6 − V

= −3 mA 3.0 3.3 3.6 V

DD

= 75 mA 3.0 3.3 3.6 V

DD

V

= 4 mV (RMS) 43.2 44.2 45.2 dB

MIC

I

=85mA − 6.0 − dB

line

MUTE = LOW − 80 − dB

2000 Mar 21 3

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

BLOCK DIAGRAM

handbook, full pagewidth

48IR

VI

MUTE

VI

6DTMF

ATTENUATOR

0.5V

CC

TEA1114A

1211RX

GAR

9QR

CURRENT AND

VOLTAGE

REFERENCE

MIC+
MIC−

V

EE

AGC

VI

V

DD

REGULATOR

V

16

CC

V

7

DD

TEA1114A

13

VI

14

10

AGC

CIRCUIT

LOW VOLTAGE

5

CIRCUIT

SLPE

1LN

3 REG

2

MGK804

Fig.1 Block diagram.

2000 Mar 21 4

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

PINNING

SYMBOL

LN 1 1, 19 positive line terminal
SLPE 2 2 slope (DC resistance) adjustment
REG 3 3 line voltage regulator decoupling
IR 4 4 receiving amplifier input
AGC 5 5 automatic gain control/ line loss compensation
DTMF 6 6 dual-tone multi-frequency input
V

DD

MUTE 8 8 mute input to select speech or dialling mode (active LOW)
QR 9 9 earpiece amplifier output
n.c. − 10 not connected
V

EE

n.c. − 12 not connected
GAR 11 13 earpiece amplifier gain adjustment
RX 12 14 receive amplifier output
MIC+ 13 15 non-inverting microphone amplifier input
MIC− 14 16 inverting microphone amplifier input
n.c. 15 − not connected
V

CC

n.c. − 18 not connected

PIN PAD

DESCRIPTION

TEA1114A(T) TEA1114AUH

7 7 regulated supply for peripherals

10 11 negative line terminal

16 17 supply voltage for internal circuit

handbook, halfpage

LN

SLPE

REG

AGC

DTMF

V

DD

MUTE

IR

1
2
3
4

TEA1114A

5
6
7
8

Fig.2 Pin configuration.

2000 Mar 21 5

MGK803

V

16

CC

n.c.

15
14

MIC−

13

MIC+

12

RX

11

GAR
V

10

EE

QR

9

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supply (pins LN, SLPE, REG, VCCand VDD)

The supply for the TEA1114A and its peripherals is
obtained from the telephone line (see Fig.3).

HE LINE INTERFACE (PINS LN, SLPE AND REG)

T
The IC generates a stabilized reference voltage (V

between pins LN and SLPE. V

is temperature

ref

ref

)

compensated and can be adjusted by means of an
external resistor (RVA). V

equals 4.15 V and can be

ref

increased by connecting RVA between pins REG and
SLPE or decreased by connecting R

between pins

VA

REG and LN. The voltage at pin REG is used by the
internal regulator to generate V
C

, which is connected to VEE. This capacitor,

REG

and is decoupled by

ref

converted into an equivalent inductance
(see Section “Set impedance”)realizesthesetimpedance
conversion from its DC value (R

) to its AC value

SLPE

(RCCin the audio-frequency range). The voltage at
pin SLPE is proportional to the line current.

The voltage at pin LN is:

I

SLPE

where:

I

line

ICC= current consumption of the IC
IP= supply current for external circuits
I

SUP

VDD regulator.

Thepreferredvalue for R
affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the gain control
characteristics, the sidetone level and the maximum
output swing on the line.

The DC line current flowing into the set is determined by
the exchange supply voltage (V
resistance (R
line (R
currents below 9 mA, the internal reference voltage
(generatingV
This means that more sets can operate in parallel with
DC line voltages (excluding the polarity guard) down to an
absolute minimum voltage of 1.45 V. At currents below
9 mA, the circuit has limited sending and receiving levels.
This is called the low voltage area.

TEA1114A

I=

ICC– IP– I

line

= line current

= current consumed between LN and VEE by the

EXCH

) and the reference voltage (V

line

ref

–

SUP

is 20 Ω.ChangingR

SLPE

), the feeding bridge

EXCH

SLPE

), the DC resistance of the telephone

). With line

ref

)isautomatically adjusted to a lower value.

will

V

=

V

LN

handbook, full pagewidth

refRSLPE

R

EXCH

V

EXCH

I×+

SLPE

R

line

TEA1114A

from preamplifier

REG SLPE

C

REG

4.7 µF

I

line

I

SLPE

R

CC

I

LN

LN

R

SLPE

20 Ω

I

SUP

V

DD

REGULATOR

V

CC

internal

circuitry

V

EE

Fig.3 Supply configuration.

I

V

CC

DD

I

DD

peripherals

C

VCC

100 µF

C

VDD

220 µF

external

circuits

MGK805

I

P

2000 Mar 21 6

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

THE INTERNAL SUPPLY POINT (PIN VCC)
The internal circuitry of the TEA1114A is supplied from

pin V
voltage by means of a resistor (R
decoupled by a capacitor C
supply some external circuits. The V
on the current consumed by the IC and the peripheral

circuits as:

V

(seealso Figs 4 and 5). I
output stage of the earpiece amplifier.

. This voltage supply is derived from the line

CC

) and must be

CC

. It may also be used to

VCC

V

CC

handbook, halfpage

CC0RCCIPIrec

CC0

R

CC

VLNR

V

V

×–=

CCICC

+()×–=

isthe current consumed by the

rec

CC

voltage depends

CC

handbook, halfpage

(mA)

TEA1114A

3

I

P

1.9 mA

2

1.6 mA

1

0

0

12 43

(2) (1)

MGL827

VCC (V)

V

CC0

I

rec

V

EE

EXTERNAL

CIRCUITS

I

MGK806

P

Fig.4 VCC used as supply voltage for external

circuits.

THE REGULATED SUPPLY POINT (PIN VDD)
The V

regulator delivers a stabilized voltage for the

DD

peripherals in transmission mode (nominal VLN) as well as
in ringer mode (VLN= 0 V). The regulator (see Fig.6)
consistsofa sense input circuit, a current switchandaV

DD

output stabilizer. The regulator operates as a current
source at the LN input in transmission mode; it takes a
constant current of 4.3 mA (at nominal conditions) from
pin LN. The current switch reduces the distortion on the
line at large signal swings. Output VDD follows the
DC voltage at pin LN (with typically 0.35 V difference) up
to VDD= 3.3 V. The input current of the regulator is
constantwhiletheoutput(source)currentis determined by
the consumption of the peripherals. The difference
betweeninputand output current is shunted bytheinternal

stabilizer.

V

DD

VCC≥ 2.5 V; VLN= 4.35 V at I

=20Ω.

R

SLPE

Curve (1) is valid when the receiving amplifier is driven:

= 150 mV; RL1= 150 Ω.

V

QR(rms)

Curve (2) is valid when the receiving amplifier is not driven.

= 15 mA; RCC= 619 Ω;

line

Fig.5 Typical current IP available from VCC for

peripheral circuitry.

Inringer mode, the stabilizer operates as ashunt stabilizer
to keep V

at 3.3 V. In this mode, the input voltage

DD

VLN= 0 V while the input current into pin VDD is delivered
by the ringing signal. VDD has to be decoupled by a
capacitor C

VDD

.

2000 Mar 21 7

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

handbook, full pagewidth

R

EXCH

V

EXCH

R

line

TEA1114A

I

LN

line

I

I

LN

SUP

SENSE

R

CC

I

CC

V

CC

SWITCH

VDD regulator

TEA1114A

C

VCC

V

DD

I

DD

peripherals

C

V

EE

220 µF

100 µF

VDD

MGK807

Fig.6 VDD regulator configuration.

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the RCC resistor. The equivalent
impedance of the circuit is illustrated in Fig.7.

REG

× R

V

LN

SLPE

EE

SLPE

× RP.

L

EQ

V

R
20 Ω

ref

SLPE

R

P

REG V

C

REG

4.7 µF

R

CC

619 Ω

CC

C

VCC

100 µF

MBE788

handbook, halfpage

LEQ=C
RP= internal resistance.
RP= 17.5 kΩ.

Transmit stage (pins MIC+, MIC− and DTMF)

MICROPHONE AMPLIFIER (PINS MIC+ AND MIC−)
The TEA1114A has symmetrical microphone inputs.

The input impedance between pins MIC+ and MIC− is
64 kΩ (2 × 32 kΩ). Thevoltage gain from pins MIC+/MIC−
to pin LN is set at 44.2 dB (typically).

Automatic gain control is provided on this amplifier for line
loss compensation.

DTMF AMPLIFIER (PIN DTMF)
When the DTMF amplifier is enabled, dialling tones may

be sent on line. These tones are also sent to the receive
output RX at a low level (confidence tone).

The TEA1114A has an asymmetrical DTMF input.
The input impedance between DTMF and VEE is 20 kΩ.
The voltage gain from pin DTMF to pin LN is set at 26 dB.

Automatic gain control has no effect on the DTMF
amplifier.

Fig.7 Equivalent impedance between LN and VEE.

2000 Mar 21 8

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

Receiving stage (pins IR, RX, GAR and QR)

The receive part consists of a receive amplifier and an
earpiece amplifier.

THE RECEIVE AMPLIFIER (PINS IR AND RX)
The receive amplifier transfers the receive signal from

input IR to output RX. The input impedance of the receive
amplifier, between pins IR and VEE,is20kΩ. The voltage
gain from pin IR to RX is set at 33.4 dB. RX output is
intended to drive high ohmic (real) loads. Automatic gain
control is provided on the receive amplifier.

THE EARPIECE AMPLIFIER (PINS GAR AND QR)
The earpiece amplifier is an operational amplifier having

its output (QR) and inverting input (GAR) available. It can
be used in conjunction with two resistors to get someextra
gain or attenuation.

In an usual configuration (see Fig.8), output RX drives the
earpiece amplifier by means of RE1 connected between
RX and GAR. Feedback resistor RE2 of the earpiece
amplifier is connected between QR and GAR. Output QR
drives the earpiece.

The gain of the earpiece amplifier (from RX to QR) can be
set between +12 and −14 dB by means of resistor RE2.

The preferred value of RE1 is 100 kΩ.
The earpiece amplifier offers a gain boost facility relative

to the initial gain. Resistor RE2 has to be replaced by the
network of R

The initial gain is defined by:
which corresponds to R

by a defined value of R

R

E21RE22

-------------------------------

Two external capacitors C
and QR) and C
ensure stability. The C
low-pass filter. The cut-off frequency corresponds to the
time constant C
C

GARS

The output voltages of both amplifiers are specified for
continuous wave drive. The maximum output swing
depends on the DC line voltage V
ICC current consumption of the circuit, the IP current
consumption of the peripheral circuits and the load
impedance.

+

R

E1

=10×C

TEA1114A

, R

E21

×–

and R

E22

E23

E23

R

E21



+

1

----------------------------------



(connected between GAR and VEE)

GARS

GAR

× RE2. The relationship

GAR

must be fulfilled to ensure stability.

GAR

as shown in Fig.8.

E23

R

+

E21RE22

–

------------------------------­R

E1

= ∞. The gain boost is realized

and is:

// R

E22

R

E23

(connected between GAR

GAR

capacitor provides a first-order

, the RCCresistor, the

LN

handbook, full pagewidth

R

EXCH

V

EXCH

I

line

R

line

TEA1114A

C

GAR

R

CC

I

CC

EARPIECE
AMPLIFIER

V

V

CC

0.5V

EE

R

QRLN GAR

CC

E2

R

E1

RX

Fig.8 Earpiece amplifier configuration.

C

GARS

C

VCC

100 µF

RX

GAR

C

GAR

QR

Addition for gain boost of
earpiece amplifier

R

E1

100 kΩ

R

E21

10 µF

R

E22

C

GARS

V

R

E23

EE

MGK808

2000 Mar 21 9

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

Automatic gain control (pin AGC)

The TEA1114A performs automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receive
amplifier in accordance with the DC line current.

The control range is 6.0 dB (which corresponds
approximately to a line length of 5 km for a 0.5 mm
diametertwisted-pair copper cable with a DC resistanceof
176 Ω/km and an average attenuation of 1.2 dB/km).

The ICcan be used withdifferent configurations of feeding
bridge (supply voltage and bridge resistance) by
connecting an external resistor R
AGC and VEE. This resistor enables the I
currents to be increased(the ratio between I

between pins

AGC

start

and I

start

stop

and I

line

stop

not affected by the resistor). The AGC function is disabled
when pin AGC is left open-circuit.

Mute function (pin MUTE)

The mute function performs the switching between the
speech mode and the dialling mode.

Sidetone suppression

The TEA1114A anti-sidetone network comprising
RCC// Z
suppresses the transmitted signal in the earpiece.
Maximum compensation is obtained when the following
conditions are fulfilled:

R

SLPERast1

k

=

Z

bal

The scale factor k is chosen to meet the compatibility with

is

a standard capacitor from the E6 or E12 range for Z
In practice, Z

thelinelength. Therefore, the value of Z
average line length which gives satisfactory sidetone
suppression with short and long lines. The suppression
also depends on the accuracy of the match between Z
and the impedance of the average line.

, R

, R

line

ast1

× R

R

-----------------------------------------------------------

R

ast2

R

ast1RSLPE

kZ

×=

line

line

, R

ast2

ast3

R

( R

CC

+()×

ast3RSLPE

×

varies considerably with the line type and

, R

ast2

TEA1114A

and Z

SLPE

ast3

bal

(see Fig.9)

bal

)+×=

shouldbefor an

bal

.

bal

When MUTE is LOW, the DTMF input is enabled and the
microphone and receive amplifier inputs are disabled.
In this mode, the DTMF tones are sent to the receive
output at a low level (confidence tone).

When MUTE is HIGH, the microphone and receiving
amplifiers inputs are enabled while the DTMF input is
disabled. The MUTE input is provided with an internal
pull-up current source to VCC.

The anti-sidetone network for the TEA1114A attenuates
the receiving signal from the line by 32 dB before it enters
the receiving amplifier. The attenuation is almost constant
over the whole audio frequency range.

A Wheatstone bridge configuration (see Fig.10) may also
be used.

More information on the balancing of an anti-sidetone
bridgecan be obtained inour publication

“Semiconductors
for Wired Telecom Systems; Application Handbook,
IC03b”

.For ordering information please contact thePhilips

Semiconductors sales office.

2000 Mar 21 10

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

handbook, full pagewidth

R

R

CC

SLPE

Z

line

V

EE

LN

SLPE

R

ast1

I

m

R

R

ast3

Z

bal

ast2

TEA1114A

IR

Z

ir

MBE787

handbook, full pagewidth

Fig.9 Equivalent circuit of TEA1114A anti-sidetone bridge.

LN

R

R

CC

SLPE

SLPE

Z

line

V

EE

Z

bal

ast1

IR

Z

ir

R

A

MBE786

I

m

R

Fig.10 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

2000 Mar 21 11

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

I

DD

V

n(max)

I

line

P

tot

T

stg

T

amb

T

j

positive continuous line voltage VEE− 0.4 12 V
repetitive line voltage during switch-on or

V

− 0.4 13.2 V

EE

line interruption
maximum input current at pin V
maximum voltage on all pins except pin V

DD

DD

line current R

SLPE

=20Ω;

− 75 mA
VEE− 0.4 VCC+ 0.4 V

− 140 mA

see Figs 11 and 12

total power dissipation T

TEA1114A − 625 mW

=75°C;

amb

see Figs 11 and 12

TEA1114AT − 416 mW

TEA1114AUH; note 1 −−
storage temperature −40 +125 °C
ambient temperature −25 +75 °C
junction temperature − 125 °C

Note

1. Mostly dependent on the maximum required ambient temperature, on the voltage between LN and SLPE and on the
thermal resistance between die ambient temperature. This thermal resistance depends on the application board
layoutand on thematerials used. Figure 13 showsthe safe operating areaversus this thermal resistancefor ambient
temperature T

amb

=75°C.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air; note 1

TEA1114A 70 K/W
TEA1114AT 115 K/W
TEA1114AUH tbf by customer

K/W

application

Note

1. Mounted on epoxy board 40.1 × 19.1 × 1.5 mm.

2000 Mar 21 12

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

150

handbook, halfpage

I

LN

(1) T
(2) T
(3) T
(4) T

=45°C; P

amb

=55°C; P

amb

=65°C; P

amb

=75°C; P

amb

= 1.000 W.

tot

= 0.875 W.

tot

= 0.750 W.

tot

= 0.625 W.

tot

(mA)

110

70

30

212

468

(1)

(2)

(3)

(4)

10

V

- V

LN

MGL212

SLPE

TEA1114A

(V)

(1) T
(2) T
(3) T
(4) T

=45°C; P

amb

=55°C; P

amb

=65°C; P

amb

=75°C; P

amb

= 0.666 W.

tot

= 0.583 W.

tot

= 0.500 W.

tot

= 0.416 W.

tot

Fig.11 DIP16 safe operating area (TEA1114A).

150

handbook, halfpage

I

LN

(mA)

110

(1)

70

30

212

468

(2)
(3)

(4)

10

V

- V

LN

MGL213

SLPE

(V)

Fig.12 SO16 safe operating area (TEA1114AT).

2000 Mar 21 13

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

160

handbook, full pagewidth

I

line

(mA)

120

80

(7)

40

0

246810

(4)

(5)

(6)

TEA1114A

FCA161

(1)

(2)

(3)

V

SLPE

(V)

12

Fig.13 Safe operating area at T

=75°C (TEA1114AUH).

amb

LINE R

th(j-a)

(1) 40
(2) 50
(3) 60
(4) 75
(5) 90
(6) 105
(7) 130

(K/W)

2000 Mar 21 14

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

CHARACTERISTICS

I

= 15 mA; VEE=0V;R

line

circuits given in Figs 15, 16 and 17; T
specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (pins LN, V

T

HE LINE INTERFACE (PINS LN, SLPE AND REG)

V

ref

, SLPE, REG and VDD)

CC

stabilized reference voltage
between pins LN and SLPE

V

LN

V

LN(Rext)

DC line voltage I

DC line voltage with an
external resistor R

∆V

LN(T)

DC line voltage variation with

temperature referred to 25 °C
THE INTERNAL SUPPLY POINT (PIN VCC)
I

CC

V

CC

internal current consumption VCC= 3.6 V − 1.25 1.5 mA

supply voltage for internal

circuitry
THE REGULATED SUPPLY POINT (PIN VDD)
I

SUP

input current of the V

regulator (current from pin LN

not flowing through pin SLPE)
V

DD

regulated supply voltage in:

speech mode I

speech mode at reduced
performance

ringer mode I

I

DD

regulated supply current

available in:

speech mode I
speech mode at reduced

performance
trickle mode I

=20Ω; pin AGC connected to VEE;Z

SLPE

=25°C for TEA1114A(T); Tj=25°C for TEA1114AUHT; unless otherwise

amb

=1mA − 1.45 − V

line

I

=4mA − 2 − V

line

I

= 15 mA 4.05 4.35 4.65 V

line

I

= 140 mA − 7.1 7.55 V

line

RVA= 44.2 kΩ (between

VA

pins LN and REG)
T

= −25 to +75 °C −±40 − mV

amb

IP=0mA − 3.6 − V

I

DD

=1mA − 0 − mA

line

=4mA − 2.15 − mA

I

line

I

≥ 11 mA − 4.3 − mA

line

= −3 mA;

DD

VLN> 3.6 + 0.25 V (typ.);
I

≥ 11 mA

line

I

=4mA − VLN− 0.35 − V

line

= 0 mA; IDD= 75 mA 3.0 3.3 3.6 V

line

≥ 11 mA −− −3mA

line

I

=4mA −−0.5 − mA

line

= 0 mA; V

line

discharging; VDD= 1.2 V

CC

= 600 Ω; f = 1 kHz; measured according to test

line

3.9 4.15 4.4 V

− 3.6 − V

3.0 3.3 3.6 V

−− 100 nA

2000 Mar 21 15

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Transmit stage (pins MIC+, MIC− and DTMF)

MICROPHONE AMPLIFIER (PINS MIC+ AND MIC−)

 input impedance

Z

i

differential between
pins MIC+ and MIC−

single-ended between

G

v(TX)

pins MIC+/MIC− and V

voltage gain from

EE

V

= 4 mV (RMS) 43.2 44.2 45.2 dB

MIC

pins MIC+/MIC− to pin LN
∆G

v(TX)(f)

voltage gain variation with

f = 300 to 3400 Hz −±0.2 − dB

frequency referred to 1 kHz
∆G

v(TX)(T)

voltage gain variation with

T

= −25 to +75 °C −±0.3 − dB

amb

temperature referred to 25 °C
CMRR common mode rejection ratio − 80 − dB
V

LN(max)(rms)

V

no(LN)

maximum sending signal

(RMS value)

I

= 15 mA; THD = 2% 1.8 2.15 − V

line

I

= 4 mA; THD = 10% − 0.35 − V

line

noise output voltage at pin LN psophometrically

weighted (P53 curve);
pins MIC+/ MIC− shorted
through 200 Ω

DTMF AMPLIFIER (PIN DTMF)

Z

 input impedance − 21 − kΩ

i

G

v(DTMF)

∆G

v(DTMF)(f)

voltagegain from pin DTMF to

pin LN

voltage gain variation with

V

= 20 mV (RMS);

DTMF

MUTE = LOW
f = 300 to 3400 Hz −±0.2 − dB

frequency referred to 1 kHz
∆G

v(DTMF)(T)

voltage gain variation with

T

= −25 to +75 °C −±0.4 − dB

amb

temperature referred to 25 °C
G

v(ct)

voltagegain from pin DTMF to

pin RX (confidence tone)

V

= 20 mV (RMS);

DTMF

RL2=10kΩ;
MUTE = LOW

Receiving stage (pins IR, RX, GAR and QR)

− 68 − kΩ

− 34 − kΩ

−−78 − dBmp

25 26 27 dB

−−9.2 − dB

THE RECEIVE AMPLIFIER (PINS IR AND RX)

Z

 input impedance − 21.5 − kΩ

i

G

v(RX)

voltage gain from pin IR to

VIR= 4 mV (RMS) 32.4 33.4 34.4 dB

pin RX
∆G

v(RX)(f)

voltage gain variation with

f = 300 to 3400 Hz −±0.2 − dB

frequency referred to 1 kHz
∆G

v(RX)(T)

voltage gain variation with

T

= −25 to +75 °C −±0.3 − dB

amb

temperature referred to 25 °C
V

RX(max)(rms)

maximum receiving signal on

pin RX (RMS value)

IP= 0 mA; sine wave
drive; RL2=10kΩ;

0.4 −−V

THD=2%

2000 Mar 21 16

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

V

THE EARPIECE AMPLIFIER (PINS GAR AND QR)
G

∆G
V

V

Automatic gain control (pin AGC)

∆G

I

start

I

stop

Mute function (pin MUTE)

V
V
I

MUTE

∆G

 maximum source and sink

RX(max)

current on pin RX (peak

value)

no(RX)(rms)

noise output voltage at pin RX

(RMS value)

v(QR)

voltage gain from pin RX to

pin QR

v(QR)

QR(max)(rms)

voltage gain setting RE1= 100 kΩ−14 − +12 dB

maximum receiving signal on

pin QR (RMS value)

no(QR)(rms)

noiseoutput voltage at pin QR

(RMS value)

v(trx)

voltage gain control range for

microphone and receive

amplifiers with respect to

I

=15mA

line

highest line current for

maximum gain

lowest line current for

minimum gain

IL
IH

LOW-level input voltage VEE− 0.4 − VEE+ 0.3 V

HIGH-level input voltage VEE+ 1.5 − VCC+ 0.4 V

input current − 210µA

v(trx)(m)

voltage gain reduction for:

microphone amplifier
receive amplifier
earpiece amplifier
DTMF amplifier

IP= 0 mA; sine wave

50 −−µA

drive

pin IR open-circuit;

−−86 − dBVp
RL2=10kΩ;
psophometrically
weighted (P53 curve)

VIR= 4 mV (RMS);

− 0 − dB
RE1=RE2= 100 kΩ

IP= 0 mA; sine wave

0.3 0.38 − V
drive; RL1= 150 Ω;
THD=2%

I

= 0 mA; sine wave

P

0.46 0.56 − V
drive; RL1= 450 Ω;
THD=2%

IR open-circuit;

−−86 − dBVp
RL1= 150 Ω;
RE1=RE2= 100 kΩ
psophometrically
weighted (P53 curve)

R

= 100 kΩ;

E1

−−98 − dBVp
RE2=25kΩ

I

=85mA − 6.0 − dB

line

− 23 − mA

− 59 − mA

MUTE = LOW − 80 − dB
MUTE = LOW − 80 − dB
MUTE = LOW − 80 − dB
MUTE = HIGH − 80 − dB

2000 Mar 21 17

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

TEST AND APPLICATION INFORMATION

R

handbook, full pagewidth

AB

BA

C

bal

220 nF

D1 D2

1N4004

D3 D4

R

ast1

130 kΩ

C

100 nF

R

ast2

3.92 kΩ
R

ast3

392 Ω

R

bal1

130 Ω

R

bal2

820 Ω

prot

Cz

Dz
V

10 V

IR

DTMF

V

SLPE

DD

peripheral

supply

V

EE

R
20 Ω

C

d

emc

10 nF

C

REG

4.7 µF

R

AGC

C

DTMF

220 nF

C

VDD

220 µF

SLPE

REG

AGC

DTMF

V

MUTE

Rz

LN

IR

TEA1114A

DD

MUTE

R

619 Ω

V

CC

n.c.

MIC−

MIC+

RX

GAR

V

EE

QR

CC

C

100 µF

R

TX3

R

E2

100 kΩ

VCC

R

R

R

E1

100 kΩ

TX1

TX2

C

GAR

100 pF

TEA1114A

C

C

C

MIC−

MIC+

GARS

C

10 µF

MIC−

MIC+

1 nF

EAR

REC

FCA002

Fig.14 Basic application of the TEA1114A IC.

2000 Mar 21 18

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

handbook, full pagewidth

R

CC

619 Ω

TEA1114A

R

SLPE

20 Ω

V

V

EE

I

line

I

line

V

DTMF

IR

MIC−

MIC+

DTMF

100
µF

V

MIC

V

O

Z

line

600

Ω

3
mA

220
nF

V

LN

LN

REG AGC SLPE

C

REG

4.7 µF

CC

I

CC

MUTE

TEA1114A

C

VDD

220 µF

I

DD

V

DD

QR

R

GAR

R
100 kΩ

RX

S1

E2

E1

C

100 µF

10 µF

C

GAR

C

GARS

VCC

100
nF

R
10 kΩ

R

L1

L2

V

Voltage gain defined as Gv= 20 log ; VI=V

Microphone gain: S1 = open.
DTMF gain and confidence tone: S1 = closed.
Inputs not being tested should be open-circuit.

O

------­V

I

Fig.15 Test figure for defining transmit gains.

MIC

or V

DTMF

MGK809

.

2000 Mar 21 19

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

handbook, full pagewidth

R

CC

619 Ω

TEA1114A

R

SLPE

20 Ω

V

V

EE

I

line

100
µF

Z

600

line

Ω

3 mA

220
nF

I

line

V

V

LN

LN

IR

MIC−

MIC+

I

DTMF

REG AGC SLPE

C

REG

4.7 µF

CC

I

CC

MUTE

TEA1114A

C

VDD

220 µF

I

DD

V

DD

QR

R

GAR

R
100 kΩ

RX

S1

E2

E1

V

RX

C

100 µF
V
10 µF

C

C

GARS

VCC

QR

GAR

100
nF

R

L2

10 kΩ

R

L1

MGK810

Receive and earpiece gains: S1 = open.
Inputs not being tested should be open-circuit.

handbook, full pagewidth

IR
MIC−
MIC+

V

CC

DTMF

Voltage gain defined as Gv= 20 log ; VO=VQRor VRX.

Fig.16 Test figure for defining receive gains.

R

CC

619 Ω

LN

TEA1114A

REG AGC SLPE

C

REG

4.7 µF

R

SLPE

20 Ω

V

V

CC

EE

V

DD

MUTE

QR

GAR

RX

V

O

------­V

I

V

DD

10 µF

MGK811

I

DD

Inputs not being tested should be open-circuit.

Fig.17 Test figure for defining regulated supply (VDD) performance in ringer and trickle mode.

2000 Mar 21 20

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

BONDING PAD LOCATIONS FOR TEA1114AUH

All x/y coordinates represent the position of the centre of the pad (in µm) with respect to the origin (x/y = 0/0) of the die
(see Fig.18). The size of all pads is 80 µm × 80 µm.

SYMBOL PAD

LN 1 99 365.7
SLPE 2 126 99
REG 3 377 99
IR 4 639 99
AGC 5 869 99
DTMF 6 1162 99
V

DD

7 1343 104
MUTE 8 1366 333
QR 9 1366 531
n.c. 10 1366 1010
V

EE

11 1370 1160
n.c. 12 1219.5 1160
GAR 13 1045 1160
RX 14 782.5 1160
MIC+ 15 357.5 1160
MIC− 16 141.5 1160
V

CC

17 99 963.5
n.c. 18 99 764
LN 19 99 570

COORDINATES

xy

CC

n.c.

LN

LN

0,0

MICM MICP

16

17

18

19

1

2

SLPE

y

15

3

REG

4 5 6

IR AGC

handbook, full pagewidth

V

x

Fig.18 TEA1114AUH bonding pad locations.

2000 Mar 21 21

RX

14

GAR

13

n.c.

DTMF

V

EE

11

12

n.c.

10

QR

9

8

MUTE

7

V

DD

FCA158

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

PACKAGE OUTLINES

DIP16: plastic dual in-line package; 16 leads (300 mil)

D

seating plane

L

Z

16

e

b

b

1

9

TEA1114A

SOT38-4

M

E

A

2

A

A

1

w M

b

2

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

max.

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

OUTLINE

VERSION

SOT38-4

12

min.

max.

IEC JEDEC EIAJ

b

1.73

1.30

0.068

0.051

b

1

0.53

0.38

0.021

0.015

b

cD E e M

2

0.36

1.25

0.23

0.85

0.014

0.049

0.009

0.033

REFERENCES

8

scale

(1) (1)

19.50

18.55

0.77

0.73

6.48

6.20

0.26

0.24

E

(1)

Z

L

3.60

8.25

3.05

7.80

0.14

0.32

0.12

0.31

EUROPEAN

PROJECTION

M

E

10.0

0.39

0.33

e

1

H

8.3

w

max.

0.2542.54 7.62

0.764.2 0.51 3.2

0.010.10 0.30

0.0300.17 0.020 0.13

ISSUE DATE

92-11-17
95-01-14

2000 Mar 21 22

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

SO16: plastic small outline package; 16 leads; body width 3.9 mm

D

c

y

Z

16

9

TEA1114A

SOT109-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 2.5 5 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

1.75

0.069

A1A2A

0.25

1.45

0.10

1.25

0.010

0.057

0.004

0.049

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.0100

0.019

0.0075

0.014

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

10.0

9.8

0.39

0.38

8

b

p

scale

eHELLpQZywv θ

4.0

1.27

3.8

0.16

0.050

0.15

w M

6.2

5.8

0.244

0.228

A

2

1.05

0.041

Q

A

1

detail X

1.0

0.7

0.4

0.6

0.028

0.039

0.020

0.016

(A )

L

p

L

0.25 0.1

0.25

0.01

0.01 0.004

A

3

θ

0.7

0.3

0.028

0.012

o

8

o

0

OUTLINE
VERSION

SOT109-1

IEC JEDEC EIAJ

076E07 MS-012

REFERENCES

2000 Mar 21 23

EUROPEAN

PROJECTION

ISSUE DATE

97-05-22
99-12-27

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

SOLDERING
Introduction

Thistextgives a very brief insight to acomplextechnology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when
through-holeandsurfacemountcomponentsaremixedon
one printed-circuit board. However, wave soldering is not
always suitable for surfacemount ICs, orfor printed-circuit
boards with high population densities. In these situations
reflow soldering is often used.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
tothe printed-circuit board by screenprinting,stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

stg(max)

). If the

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

WAVE SOLDERING
Conventional single wave soldering is not recommended

forsurfacemountdevices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

– smaller than 1.27 mm, the footprint longitudinal axis

The footprint must incorporate solder thieves at the
downstream end.

• Forpackageswithleads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, thepackage must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two

diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C. When using a dedicated tool, all other leads can
be soldered in one operation within 2 to 5 seconds
between 270 and 320 °C.

TEA1114A

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

must be parallel to the transport direction of the
printed-circuit board.

2000 Mar 21 24

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable
Surface mount BGA, SQFP not suitable suitable −

HLQFP, HSQFP, HSOP, HTQFP, HTSSOP,
SMS

(4)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

, SO, SOJ suitable suitable −

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

not suitable

SOLDERING METHOD

WAVE REFLOW

(2)

(3)

− suitable

suitable −

(4)(5)

suitable −

(6)

suitable −

(1)

DIPPING

.

2000 Mar 21 25

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with

TEA1114A

dialler interface and regulated strong supply

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

BARE DIE DISCLAIMER

All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.

2000 Mar 21 26

Philips Semiconductors Product specification

Low voltage telephone transmission circuit with
dialler interface and regulated strong supply

NOTES

TEA1114A

2000 Mar 21 27

Philips Semiconductors – a w orldwide compan y

Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. [phone], Fax. [phone]

Indonesia: PT Philips DevelopmentCorporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. [phone] ext. 2501, Fax. [phone]

Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. [phone], Fax. [phone]

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. [phone], Fax. [phone]

Italy: PHILIPS SEMICONDUCTORS, Via Casati,23 - 20052 MONZA (MI),
Tel. [phone], Fax [phone]

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. [phone], Fax. [phone]

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. [phone], Fax. [phone]

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. [phone], Fax. [phone]

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. [phone], Fax [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]

Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. [phone], Fax. [phone]

South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone] Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 403502/04/pp28 Date of release: 2000 Mar 21 Document order number: 9397 750 06729