Datasheet tea1110a DATASHEETS (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1110A

Low voltage versatile telephone
transmission circuit with dialler
interface

Product specification
Supersedes data of 1997 Apr 22
File under Integrated Circuits, IC03

2000 Feb 15

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

FEATURES

• Low DCline voltage; operates down to 1.6 V (excluding
voltage drop over external polarity guard)

• Voltage regulator with adjustable DC voltage

• Provides a supply for external circuits

• Symmetrical high impedance inputs (64 kΩ) for

dynamic, magnetic or piezo-electric microphones

• Asymmetrical high impedance input (32 kΩ) for electret
microphones

• DTMF input with confidence tone

• MUTE input for pulse or DTMF dialling

• Receiving amplifier for dynamic, magnetic or

piezo-electric earpieces

• AGC line loss compensation for microphone and
earpiece amplifiers.

QUICK REFERENCE DATA

I

= 15 mA; VEE=0V; R

line

T

=25°C for TEA1110A(T); Tj = 25 °C for TEA1110AUH; unless otherwise specified.

amb

=20Ω; AGC pin connected to VEE; Z

SLPE

APPLICATION

• Line powered telephone sets, cordless telephones, fax
machines, answering machines.

GENERAL DESCRIPTION

The TEA1110A is a bipolar integrated circuit that performs
all speech and line interface functions required in fully
electronic telephone sets. It performs electronic switching
between speech and dialling. The IC operates at a line
voltage down to 1.6 V DC (with reduced performance) to
facilitate the use of telephone sets connected in parallel.

All statements and values refer to all versions unless
otherwise specified.

= 600 Ω; f = 1 kHz;

line

TEA1110A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA
V
I
V
G

LN

CC

CC

vtrx

DC line voltage 3.35 3.65 3.95 V
internal current consumption VCC= 2.9 V − 1.1 1.4 mA
supply voltage for peripherals IP=0mA − 2.9 − V
typical voltage gain

microphone amplifier (not

V

= 4 mV (RMS) − 43.7 − dB

MIC

adjustable)

= 4 mV (RMS) 19 − 33 dB

IR

I

=85mA − 5.9 − dB

line

∆G

vtrx

receiving amplifier range V

gain control range formicrophone and
receiving amplifiers with respect to
I

=15mA

line

∆G

vtrxm

gain reduction for microphone and

MUTE = LOW − 80 − dB

receiving amplifiers

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TEA1110A DIP14 plastic dual in-line package; 14 leads (300 mil) SOT27-1
TEA1110AT SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1
TEA1110AUH − bare die; on foil −

2000 Feb 15 2

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

BLOCK DIAGRAM

handbook, full pagewidth

7

DTMF

IR

5

ATT.

V I

V I

V I

GAR

QR MUTE

13 12 6

CURRENT

REFERENCE

TEA1110A

V

14

CC

LN

1

MIC+

MIC−

10

9

V

EE

V I

AGC

CIRCUIT

AGC

LOW VOLTAGE

CIRCUIT

TEA1110A(T)

3

2811
SLPE

REG

MGG736

Fig.1 Block diagram.

2000 Feb 15 3

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1110A

transmission circuit with dialler interface

PINNING

SYMBOL

LN 1 1 positive line terminal
SLPE 2 2 slope (DC resistance) adjustment
REG 3 3 line voltage regulator decoupling
n.c. 4 4 not connected
DTMF 5 5 dual-tone multi-frequency input
MUTE 6 6 mute input to select speech or dialling mode (active LOW)
IR 7 7 receiving amplifier input
AGC 8 8 automatic gain control/ line loss compensation
MIC− 9 9 inverting microphone amplifier input
MIC+ 10 10 non-inverting microphone amplifier input
V

EE

QR 12 12 earpiece amplifier output
GAR 13 13 earpiece amplifier gain adjustment
V

CC

PIN PAD

DESCRIPTION

TEA1110A(T) TEA1110AUH

11 11 negative line terminal

14 14 supply voltage for internal circuit

handbook, halfpage

LN

1

SLPE

2
3

REG

4

n.c.

TEA1110A(T)

5

DTMF

6

MUTE

7

IR

MGG735

Fig.2 Pin configuration.

14

V

CC

13

GAR

12

QR

11

V

EE

10

MIC+

9

MIC−

8

AGC

2000 Feb 15 4

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supply (pins LN, SLPE, VCC and REG)

The supply for the TEA1110A and its peripherals is
obtained from the telephone line; see Fig.3.

The IC generates a stabilized reference voltage (V
between pins LN and SLPE. V

is temperature

ref

compensated and can be adjusted by means of an
external resistor (RVA). V

equals 3.35 V and can be

ref

increased by connecting RVA between pins REG and
SLPE (see Fig.4), or decreased by connecting R
between pins REG and LN. The voltage at pin REG is
used by the internal regulator to generate V
decoupled by C

, which is connected to VEE. This

REG

ref

capacitor, converted into an equivalent inductance
(see Section “Set impedance”), realizes the set
impedance conversion from its DC value (R

SLPE

value (RCC in the audio-frequency range). The voltage at
pin SLPE is proportional to the line current.

ref

VA

and is

) to its AC

)

TEA1110A

The voltage at pin LN is:

V
I

V

LN

SLPEIlineICC

refRSLPEISLPE

Where:

= line current

I

line

ICC= current consumption of the IC
IP= supply current for peripheral circuits
I* = current consumed between LN and VEE.

ThepreferredvalueforR
affect more than the DC characteristics; it also influences
the microphone and DTMF gains, the gain control
characteristics, the sidetone level and the maximum
output swing on the line.

×+=

– IP– I∗–=

is 20 Ω.ChangingR

SLPE

SLPE

will

handbook, full pagewidth

R

exch

V

exch

R

line

I

line

I

SLPE

LN
114

I

sh

V

d

2
SLPE

R

SLPE

20 Ω

R

CC

619 Ω

from pre amp

V

CC

I

I*

311

REG

C

REG

4.7 µF

CC

TEA1110A

C

VCC

100 µF

V

EE

peripheral

circuits

MGG737

I

P

Fig.3 Supply configuration.

2000 Feb 15 5

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

The internal circuitry of the TEA1110A is supplied from
pin VCC. This voltage supply is derived from the line
voltage by means of a resistor (R
decoupled by a capacitor C

VCC

supply peripheral circuits such as dialling or control
circuits. The V

voltage depends on the current

CC

consumed by the IC and the peripheral circuits as shown
by the formula:

V

CC0

is the internal equivalent resistance of the voltage

R

CCint

supply, and I

V

VLNR

is the current consumed by the output

rec

CC

×–=

CCICC

V

CC0RCCintIPIrec

(see also Figs 5 and 6).

stage of the earpiece amplifier.
The DC line current flowing into the set is determined by

the exchange supply voltage (V
resistance (R
(R

) and the reference voltage (V

line

), the DC resistance of the telephone line

exch

below 7.5 mA, the internal reference voltage (generating
V

)isautomaticallyadjustedtoalowervalue.Thismeans

ref

thatmoresetscanoperateinparallelwithDClinevoltages
(excluding the polarity guard) down to an absolute
minimum voltage of 1.6 V. At currents below 7.5 mA, the
circuit has limited sending and receiving levels. This is
called the low voltage area.

6.0

handbook, halfpage

V

ref

(V)

5.0

) and must be

CC

. It may also be used to

–()×–=

), the feeding bridge

exch

). With line currents

ref

MGD176

TEA1110A

Set impedance

In the audio frequency range, the dynamic impedance is
mainly determined by the R
impedance of the circuit is illustrated in Fig.7.

Microphone amplifier (pins MIC+ and MIC−)

The TEA1110A has symmetrical microphone inputs. The
input impedance between pins MIC+ and MIC− is 64 kΩ
(2 × 32 kΩ). The voltage gain from pins MIC+/MIC− to pin
LN is set at 43.7 dB (typ).

Automatic gain control is provided on this amplifier for line
loss compensation.

Receiving amplifier (pins IR, GAR and QR)

The receiving amplifier has one input (IR) and one output
(QR). The input impedance between pin IR and pin VEEis
20 kΩ. The voltage gain from pin IR to pin QR is set at
33 dB (typ). The gain can be decreased by connecting an
external resistor R

between pins GAR and QR; the

GAR

adjustment range is 14 dB. Two external capacitors C
(connectedbetweenGAR and QR) and C
between GAR and VEE) ensure stability. The C
capacitor provides a first-order low-pass filter. The cut-off
frequency corresponds to the time constant
C

GAR

× (R

GARint

// R

GAR

which sets the gain with a typical value of 125 kΩ. The
condition C

GARS

=10×C

stability.
Theoutputvoltageofthereceivingamplifierisspecifiedfor

continuous wave drive. The maximum output swing
depends on the DC line voltage, the RCC resistor, the I
current consumption of the circuit, the IP current
consumption of the peripheral circuits and the load
impedance.

resistor. The equivalent

CC

GARS

). R

GAR

is the internal resistor

GARint

must be fulfilled to ensure

GAR

(connected

GAR

CC

4.0

(1)

(2)

3.0

4

10

(1) Influence of RVA on V
(2) V

without influence of RVA.

ref

5

10

.

ref

6

10

RVA (Ω)

7

10

Fig.4 Reference voltage adjustment by RVA.

2000 Feb 15 6

Automatic gain control is provided on this amplifier for line
loss compensation.

Automatic gain control (pin AGC)

The TEA1110A performs automatic line loss
compensation. The automatic gain control varies the gain
of the microphone amplifier and the gain of the receiving
amplifier in accordance with the DC line current. The
control range is 5.9 dB (which corresponds approximately
to a line length of 5 km for a 0.5 mm diameter twisted-pair
copper cable with a DC resistance of 176 Ω/km and an
average attenuation of 1.2 dB/km). The IC can be used
with different configurations of feeding bridge (supply
voltage and bridge resistance) by connecting an external
resistor R

between pins AGC and VEE.

AGC

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

This resistor enables the I
increased (the ratio between I
by the resistor). The AGC function is disabled when
pin AGC is left open-circuit.

Mute function (pin MUTE)

The mute function performs the switching between the
speechmode and the dialling mode. When MUTE is LOW,
the DTMF input is enabled and the microphone and
receiving amplifiers inputs are disabled. When MUTE is
HIGH, the microphone and receiving amplifiers inputs are
enabled while the DTMF input is disabled. A pull-up
resistor is included at the input.

DTMF amplifier (pin DTMF)

When the DTMF amplifier is enabled, dialling tones may
be sent on line. These tones can be heard in the earpiece
at a low level (confidence tone).

The TEA1110A has an asymmetrical DTMF input. The
input impedance between DTMF and VEE is 20 kΩ. The
voltage gain from pin DTMF to pin LN is 25.3 dB.

start

and I

start

line currents to be

stop

and I

is not affected

stop

2.5

andbook, halfpage

I

P

(mA)

2

1.5

1

0.5

0

01234

(1) With RVA resistor.
(2) Without RVA resistor.

TEA1110A

MBE783

(1)(2)

VCC (V)

The automatic gain control has no effect on the DTMF
amplifier.

handbook, halfpage

R

CCintVCC

V

CCO

I

rec

V

EE

PERIPHERAL

CIRCUIT

I

P

MBE792

Fig.5 Typical current IP available from VCC for

peripheral circuits at I

andbook, halfpage

V

Leq=C
RP= internal resistance.
RP= 15.5 kΩ.

REG

× R

LN

SLPE

EE

SLPE

× RP.

L

EQ

V

R

SLPE

20 Ω

ref

= 15 mA.

line

R

P

REG V

C

REG

4.7 µF

R

619 Ω

CC

C

100 µF

MBE788

CC

VCC

Fig.6 VCC supply voltage for peripherals.

2000 Feb 15 7

Fig.7 Equivalent impedance between LN and

VEE.

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

SIDETONE SUPPRESSION

The TEA1110A anti-sidetone network comprising
RCC//Z
suppresses the transmitted signal in the earpiece.
Maximum compensation is obtained when the following
conditions are fulfilled:

R

k

Z

bal

The scale factor k is chosen to meet the compatibility with
a standard capacitor from the E6 or E12 range for Z

In practice, Z
thelinelength. Therefore, the value of Z
average line length which gives satisfactory sidetone
suppression with short and long lines. The suppression
also depends on the accuracy of the match between Z
and the impedance of the average line.

, R

, R

line

ast1

× R

SLPERast1

R

ast2Rast3RSLPE

=

------------------------------------------------------------------­R

ast1RSLPE

kZ

×=

line

line

, R

ast2

CC

+()×()

×()

varies considerably with the line type and

, R

ast3

R

ast2Rast3

SLPE

+()×=

and Z

bal

shouldbefor an

bal

(see Fig.8 )

bal

.

bal

TEA1110A

The anti-sidetone network for the TEA1110A (as shown in
Fig.13) attenuates the receiving signal from the line by
32 dB before it enters the receiving amplifier. The
attenuation is almost constant over the whole audio
frequency range.

A Wheatstone bridge configuration (see Fig.9) may also
be used.

More information on the balancing of an anti-sidetone
bridge can be obtained in our publication

Handbook for Wired Telecom Systems, IC03b”

number 9397 750 00811.

“Applications

, order

handbook, full pagewidth

LN

R

R

SLPE

CC

SLPE

Z

line

V

EE

R

ast1

I

m

R

ast3

IR

Z

R

ast2

Z

bal

ir

MBE787

Fig.8 Equivalent circuit of TEA1110A family anti-sidetone bridge.

2000 Feb 15 8

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

handbook, full pagewidth

R

R

CC

SLPE

Z

line

V

EE

LN

SLPE

TEA1110A

Z

bal

ast1

IR

Z

ir

R

A

MBE786

I

m

R

Fig.9 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

2000 Feb 15 9

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1110A

transmission circuit with dialler interface

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

V

n(max)

I

line

P

tot

T

stg

T

amb

T

j

Note

1. Mostlydependent on the maximum required ambient temperature, on the voltage between LN and SLPE and on the
thermal resistance between die ambient temperature. This thermal resistance depends on the application board
layoutand on the materials used. Figure 12 shows the safe operating area versus this thermal resistance for ambient
temperature T

positive continuous line voltage VEE− 0.4 12 V
repetitiveline voltage during switch-on or

V

− 0.4 13.2 V

EE

line interruption
maximum voltage on all pins VEE− 0.4 VCC+ 0.4 V
line current R

SLPE

=20Ω;

− 140 mA

see Figs 10 and 11

total power dissipation T

TEA1110A − 588 mW

=75°C;

amb

see Figs 10 and 11

TEA1110AT − 384 mW

TEA1110AUH; note 1 −−mW
storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C
junction temperature − +125 °C

=75°C

amb

HANDLING

This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with

“MIL STD 883C - method 3015”

.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to

in free air

ambient; mounted on epoxy board

40.1 × 19.1 × 1.5 mm

TEA1110A 85 K/W

TEA1110AT 130 K/W

TEA1110AUH tbf by customer

in application

K/W

2000 Feb 15 10

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

150

handbook, halfpage

I

line

(mA)

130

(1) T
(2) T
(3) T
(4) T

=45°C; P

amb

=55°C; P

amb

=65°C; P

amb

=75°C; P

amb

= 0.615 W.

tot

= 0.538 W.

tot

= 0.461 W.

tot

= 0.384 W.

tot

110

90

70

50

30

212

46810

(1)

(2)

(3)

(4)

V

LNVSLPE

TEA1110A

MBH275

(V)

(1) T
(2) T
(3) T
(4) T
(5) T

=35°C; P

amb

=45°C; P

amb

=55°C; P

amb

=65°C; P

amb

=75°C; P

amb

= 1.058 W.

tot

= 0.941 W.

tot

= 0.823 W.

tot

= 0.705 W.

tot

= 0.588 W.

tot

Fig.10 SO14 Safe operating area (TEA1110AT).

150

handbook, halfpage

I

line

(mA)

130

110

90

70

50

30

212

46810

MGD859

(1)

(2)

(3)

(4)
(5)

_

V

V

LN

SLPE

(V)

Fig.11 DIP14 Safe operating area (TEA1110A).

2000 Feb 15 11

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

160

handbook, full pagewidth

I

line

(mA)

120

80

(7)

40

0

246810

TEA1110A

FCA160

(1)

(2)

(3)

(4)

(5)

(6)

V

SLPE

(V)

12

Fig.12 Safe operating area at T

=75°C (TEA1110AUH).

amb

LINE R

th(j-a)

(1) 40
(2) 50
(3) 60
(4) 75
(5) 90
(6) 105
(7) 130

(K/W)

2000 Feb 15 12

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1110A

transmission circuit with dialler interface

CHARACTERISTICS

I

= 15 mA; VEE=0V; R

line

T

=25°C for TEA1110A(T); Tj=25°C for TEA1110AUH; unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies (pins V

V

ref

, VCC, SLPE and REG)

LN

stabilized voltage between LN and
SLPE

V

LN

V

LN(exR)

DC line voltage I

DC line voltage with an external
resistor R

∆V

LN(T)

DC line voltage variation with

temperature referred to 25 °C
I
V
R

CC

CC

CCint

internal current consumption VCC= 2.9 V − 1.1 1.4 mA

supply voltage for peripherals IP=0mA − 2.9 − V

equivalent supply voltage

resistance

Microphone amplifier (pins MIC+ and MIC−)
Z

 input impedance

i

differential between pins
MIC+ and MIC−

single-ended between pins
MIC+/MIC− and V

G

vtx

voltage gain from MIC+/MIC− to

LN
∆G

vtx(f)

gain variation with frequency

referred to 1 kHz
∆G

vtx(T)

gain variation with temperature

referred to 25 °C
CMRR common mode rejection ratio − 80 − dB
V

LN(max)(rms)

maximum sending signal

(RMS value)
V

notx

noise output voltage at pin LN; pins

MIC+/MIC− shorted through 200 Ω

Receiving amplifier (pins IR, QR and GAR)

Z

 input impedance − 20 − kΩ

i

G
∆G

vrx

vrx(f)

voltage gain from IR to QR VIR= 4 mV (RMS) 32 33 34 dB

gain variation with frequency

referred to 1 kHz
∆G

vrx(T)

gain variation with temperature

referred to 25 °C

=20Ω; AGC pin connected to VEE; Z

SLPE

line

I

line

I

line

I

line

R

VA(SLPE−REG)

VA

T

amb

IP= 0.5 mA − 550 620 Ω

EE

V

MIC

f = 300 to 3400 Hz −±0.2 − dB

T

amb

I

line

I

line

psophometrically
weighted (P53 curve)

f = 300 to 3400 Hz −±0.2 − dB

T

amb

= 600 Ω; f = 1 kHz;

line

3.1 3.35 3.6 V

=1mA − 1.6 − V
=4mA − 2.3 − V
= 15 mA 3.35 3.65 3.95 V
= 140 mA −−6.9 V

=27kΩ− 4.4 − V

= −25 to +75 °C −±30 − mV

− 64 − kΩ

− 32 − kΩ

= 4 mV (RMS) 42.7 43.7 44.7 dB

= −25 to +75 °C −±0.3 − dB

= 15 mA; THD = 2% 1.4 1.7 − V
= 4 mA, THD = 10% − 0.8 − V

−−78.5 − dBmp

= −25 to +75 °C −±0.3 − dB

2000 Feb 15 13

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1110A

transmission circuit with dialler interface

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

vrxr

V

o(rms)

V

norx(rms)

Automatic gain control (pin AGC)

∆G

vtrx

I

start

I

stop

DTMF amplifier (pin DTMF)

 input impedance − 20 − kΩ

Z

i

G

vdtmf

∆G

vdtmf(f)

∆G

vdtmf(T)

G

vct

Mute function (pin MUTE)

V

IL

V

IH

I

MUTE

∆G

vtrxm

gain voltage reduction range external resistor

−−14 dB
connected between
GAR and QR

maximum receiving signal (RMS
value)

IP= 0 mA sine wavedrive;
RL= 150 Ω; THD = 2%

I

= 0 mA sine wavedrive;

P

− 0.25 − V

− 0.35 − V

RL= 450 Ω; THD = 2%

noise output voltage at pin QR
(RMS value)

G

= 33 dB;

vrx

IR open-circuit;

−−87 − dBVp

RL= 150 Ω;
psophometrically
weighted (P53 curve)

gain control range for microphone

I

=85mA − 5.9 − dB

line

and receiving amplifiers with
respect to I

highest line current for maximum

=15mA

line

− 23 − mA

gain
lowest line current for minimum

− 56 − mA

gain

voltage gain from DTMF to LN V

= 20 mV (RMS);

DTMF

24.1 25.3 26.5 dB
MUTE = LOW

gain variation with frequency

f = 300 to 3400 Hz −±0.2 − dB

referred to 1 kHz
gain variation with temperature

T

= −25 to +75 °C −±0.4 − dB

amb

referred to 25 °C
voltage gain from DTMF to QR

(confidence tone)

V

= 20 mV (RMS);

DTMF

RL= 150 Ω

−−15 − dB

LOW level input voltage VEE− 0.4 − VEE+ 0.3 V
HIGH level input voltage VEE+ 1.5 − VCC+ 0.4 V
input current − 1.5 −µA
gain reduction for microphone and

MUTE = LOW − 80 − dB

receiving amplifiers

2000 Feb 15 14

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2000 Feb 15 15

handbook, full pagewidth

APPLICATION INFORMATION

Philips Semiconductors Product specification

Low voltage versatile telephone

transmission circuit with dialler interface

a/b

telephone

line

b/a

VDR
95 V

R

protect

10 Ω

4 ×

BAS11

BZX79C10

BSN254

R

limit

3.9 Ω

R

ast1

130 kΩ

R

ast2

3.92 kΩ

C

R

ast3

390 Ω

Z

bal

BC547

GARS

1 nF

C

IR

C

GAR

100 pF

R

SLPE

20 Ω

R

pd1

470 kΩ

BZX79C10

LN

IR

QR

TEA1110A(T)

GAR
MIC+

MIC−

SLPE REG AGC

C

REG

4.7 µF

V

CC
DTMF
MUTE

V

EE

R

CC

619 Ω

signal from

dial and

control circuits

C

VCC

100 µF

supply for
peripheral

circuits

BF473

R

470 kΩ

pd2

BC558

MGG738

R

pd3

1 MΩ

R

pd4

470 kΩ

BC547

R

pd5

470 kΩ

R

68 kΩ

pd6

PD
input

Fig.13 Typical application of the TEA1110A in sets with Pulse Dialling or Flash facilities.

TEA1110A

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1110A

transmission circuit with dialler interface

BONDING PAD LOCATIONS FOR TEA1110AUH

All x/y coordinates represent the position of the centre of the pad (in µm) with respect to the origin (x/y = 0/0) of the die
(see Fig.14). The size of all pads is 80 µm × 80 µm.

SYMBOL PAD

xy

LN 1 123 782
SLPE 2 251 459
REG 3 490.2 459
n.c. 4 685 459
DTMF 5 1174 459
MUTE 6 1450 459
IR 7 1449 664
AGC 8 1449.2 1006.8
MIC− 9 1297 1200
MIC+ 10 1108 1200
V

EE

11 678 1200
QR 12 318.2 1200.2
GAR 13 123 1201
V

CC

14 123 1017.8

COORDINATES

3

REG

V

n.c.

EE

handbook, full pagewidth

QRGAR

13

12 11 10 9

14

V

CC

1

LN

2

x

0,0

SLPE

y

Fig.14 TEA1110AUH bonding pad locations.

2000 Feb 15 16

MIC+

DTMF

MIC−

AGC

8

IR

7

54

6

MUTE

FCA157

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

PACKAGE OUTLINES

DIP14: plastic dual in-line package; 14 leads (300 mil)

D

seating plane

L

Z

14

e

b

TEA1110A

SOT27-1

M

E

A

2

A

A

1

w M

b

1

8

c

(e )

1

M

H

pin 1 index

1

0 5 10 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

UNIT

mm

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

OUTLINE
VERSION

SOT27-1

A

min.

A

1 2

max.

IEC JEDEC EIAJ

050G04 MO-001 SC-501-14

b

1.73

1.13

0.068

0.044

b

0.53

0.38

0.021

0.015

1

cD

0.36

0.23

0.014

0.009

REFERENCES

scale

(1) (1)

19.50

18.55

0.77

0.73

7

Ee M

6.48

6.20

0.26

0.24

E

(1)

Z

M

e

L

1

3.60

3.05

0.14

0.12

E

8.25

7.80

0.32

0.31

EUROPEAN

PROJECTION

10.0

8.3

0.39

0.33

H

0.2542.54 7.62

ISSUE DATE

w

0.010.10 0.30

95-03-11
99-12-27

max.

2.24.2 0.51 3.2

0.0870.17 0.020 0.13

2000 Feb 15 17

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

SO14: plastic small outline package; 14 leads; body width 3.9 mm

D

c

y

Z

14

8

TEA1110A

SOT108-1

E

H

E

A

X

v M

A

pin 1 index

1

e

0 2.5 5 mm

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

A

max.

1.75

0.069

A

0.25

0.10

0.010

0.004

1

A2A

1.45

1.25

0.057

0.049

0.25

0.01

b

3

p

0.49

0.25

0.36

0.19

0.019

0.0100

0.014

0.0075

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1)

cD

8.75

8.55

0.35

0.34

7

w M

b

p

scale

eHELLpQZywv θ

4.0

1.27

3.8

0.16

0.050

0.15

6.2

5.8

0.244

0.228

A

2

1.05

0.041

Q

A

1

detail X

1.0

0.7

0.4

0.6

0.028

0.039

0.024

0.016

(A )

L

p

L

0.25

0.01 0.004

A

3

θ

0.25 0.1

0.01

(1)

0.7

0.3

0.028

0.012

o

8

o

0

OUTLINE

VERSION

SOT108-1

IEC JEDEC EIAJ

076E06 MS-012

REFERENCES

2000 Feb 15 18

EUROPEAN

PROJECTION

ISSUE DATE

97-05-22
99-12-27

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

SOLDERING
Introduction

This text gives a very brief insight to a complex
technology. A more in-depth account of soldering ICs can
be found in our

Packages”

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mount components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mount ICs, or for
printed-circuit boards with high population densities. In
these situations reflow soldering is often used.

Through-hole mount packages

SOLDERING BY DIPPING OR BY SOLDER WAVE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T
printed-circuit board has been pre-heated, forced cooling
maybe necessary immediately after soldering to keep the
temperature within the permissible limit.

MANUAL SOLDERING
Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.

“Data Handbook IC26; Integrated Circuit

(document order number 9398 652 90011).

). If the

stg(max)

TEA1110A

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

WAVE SOLDERING
Conventional single wave soldering is not recommended

for surface mount devices (SMDs) or printed-circuit
boards with a high component density, as solder bridging
and non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by
a smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• For packages with leads on four sides, the footprint
must be placed at a 45° angle to the transport direction
of the printed-circuit board. The footprint must
incorporate solder thieves downstream and at the side
corners.

During placement and before soldering, the package
must be fixed with a droplet of adhesive. The adhesive
can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Surface mount packages

REFLOW SOLDERING
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling
or pressure-syringe dispensing before package
placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling)
vary between 100 and 200 seconds depending on
heating method.

2000 Feb 15 19

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

MANUAL SOLDERING
Fix the component by first soldering two

diagonally-oppositeendleads.Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1110A

transmission circuit with dialler interface

When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

Suitability of IC packages for wave, reflow and dipping soldering methods

MOUNTING PACKAGE

Through-hole mount DBS, DIP, HDIP, SDIP, SIL suitable
Surface mount BGA, LFBGA, SQFP, TFBGA not suitable suitable −

HBCC, HLQFP, HSQFP, HSOP, HTQFP,
HTSSOP, SMS

(4)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.

5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

6. Wavesoldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

, SO, SOJ suitable suitable −

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

not suitable

SOLDERING METHOD

WAVE REFLOW

(2)

(3)

− suitable

suitable −

(4)(5)

suitable −

(6)

suitable −

(1)

DIPPING

.

2000 Feb 15 20

Philips Semiconductors Product specification

Low voltage versatile telephone

TEA1110A

transmission circuit with dialler interface

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

BARE DIE DISCLAIMER

All die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of
ninety (90) days from the date of Philips' delivery. If there are data sheet limits not guaranteed, these will be separately
indicated in the data sheet. There is no post waffle pack testing performed on individual die. Although the most modern
processes are utilized for wafer sawing and die pick and place into waffle pack carriers, Philips Semiconductors has no
control of third party procedures in the handling, packing or assembly of the die. Accordingly, Philips Semiconductors
assumes no liability for device functionality or performance of the die or systems after handling, packing or assembly of
the die. It is the responsibility of the customer to test and qualify their application in which the die is used.

2000 Feb 15 21

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

NOTES

TEA1110A

2000 Feb 15 22

Philips Semiconductors Product specification

Low voltage versatile telephone
transmission circuit with dialler interface

NOTES

TEA1110A

2000 Feb 15 23

Philips Semiconductors – a w orldwide compan y

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Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

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106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
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For all other countries apply to: Philips Semiconductors,
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5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

69

Printed in The Netherlands 403502/03/pp24 Date of release: 2000 Feb 15 Document order number: 9397 750 06724