Datasheet TEA1099H Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1099H

Speech and handsfree IC with
auxiliary inputs/outputs and analog
multiplexer

Product specification
Supersedes data of 1998 Jun 11
File under Integrated Circuits, IC03

1999 Apr 08

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

FEATURES
Line interface

• Low DC line voltage

• Voltage regulator with adjustable DC voltage

• Symmetrical high impedance inputs (70 kΩ) for

dynamic, magnetic or electret microphones

• Dual Tone Multi-Frequency (DTMF) input with
confidence tone on earphone and/or loudspeaker

• Receive amplifier for dynamic, magnetic or
piezo-electric earpieces (with externally adjustable gain)

• AGC: Automatic Gain Control for true line loss
compensation.

Supplies

• Provides a strong 3.35 V regulated supply for
microcontroller or dialler

• Provides filtered power supply, optimized according to
line current and compatible with external voltage or
current sources

• Filtered 2.0 V power supply output for electret
microphone

• Compatible with a ringer mode

• Power-Down (

Handsfree

• Asymmetrical high-impedance input for electret
microphone

• Loudspeaker amplifier with single-ended rail-to-rail
output and externally adjustable gain

• Dynamic limiter on loudspeaker amplifier to prevent
distortion

• Logarithmic volume control on loudspeaker amplifier via
linear potentiometer

• Duplex controller consisting of:
– Signal and noise envelope monitors for both

channels (with adjustable sensitivities and timing)

– Decision logic (with adjustable switch-over and Idle

mode timing)

– Voice switch control (with adjustable switching range

and constant sum of gain during switching).

PD) logic input for power-down.

TEA1099H

Auxiliary interfaces

• General auxiliary output for transmit and receive
purposes

• Auxiliary transmit input with high signal level capability
dedicated to line transmission

• Auxiliary receive input with high signal level capability

• Integrated multiplexer for channels selection.

APPLICATIONS

• Line powered telephone sets

• Cordless telephones

• Fax machines

• Answering machines.

GENERAL DESCRIPTION

The TEA1099H is an analog bipolar circuit dedicated for
telephone applications. It includes a line interface, handset
(HS) microphone and earpiece amplifiers, handsfree (HF)
microphone and loudspeaker amplifiers, some specific
auxiliary Inputs/Outputs (I/Os) and an analog multiplexer
to enable the right transmit and/or receive channels.
The multiplexer is controlled by a logic circuit which
decodes four logic inputs provided by a microcontroller.
Thirteen different application modes have been defined
and can be accessed by selecting the right logic inputs.
An application mode is a special combination of transmit
and receive channels required by telephone applications.

This IC can be supplied by the line and/or by the mains if
available (in a cordless telephone or an answering
machine for example). It provides a 3.35 V supply for a
microcontroller or dialler and a 2.0 V filtered voltage supply
for an electret microphone. The IC is designed to facilitate
the use of the loudspeaker amplifier during ringing phase.

1999 Apr 08 2

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

QUICK REFERENCE DATA

I

= 15 mA; R

line

AUXC = LOW;

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

line

V

SLPE

V

BB

V

DD

V

ESI

I

ESI(ext)

I

BB

I

BB(pd)

G

v(MIC-LN)

G

v(IR-RECO)

∆G

v(QR)

G

v(TXIN-TXOUT)

G

v(HFTX-LN)

G

v(HFRX-LSAO)

SWRA switching range − 40 − dB

∆SWRA switching range adjustment with R

∆G

v(trx)

SLPE

=20Ω; Z

= 600 Ω; f = 1 kHz; T

line

=25°C; AGC pin connected to LN; PD = HIGH; HFC = LOW;

amb

MUTT = HIGH; MUTR = HIGH; measured according to test circuits; unless otherwise specified.

line current operating range normal operation 11 − 140 mA

with reduced performance 1 − 11 mA

stabilized voltage between SLPE
and GND (V

ref

)

regulated supply voltage for
internal circuitry

regulated supply voltage on pin
V

DD

external voltage supply allowed

I

= 15 mA 3.4 3.7 4.0 V

line

I

= 70 mA 5.7 6.1 6.5 V

line

I

= 15 mA 2.75 3.0 3.25 V

line

I

= 70 mA 4.9 5.3 5.7 V

line

VBB> 3.35 V + 0.25 V (typ) 3.1 3.35 3.6 V
otherwise − V

− 0.25 − V

BB

−− 6V

on pin ESI
external current supply allowed on

−− 140 mA

pin ESI
current available on pin V

BB

speech mode − 11 − mA
handsfree mode − 9 − mA

current consumption on V

BB

PD = LOW − 460 −µA

during power-down phase
voltage gain from pin

V

= 5 mV (RMS) 43.3 44.3 45.3 dB

MIC

MIC+/MIC− to LN
voltage gain from pin IR

VIR= 15 mV (RMS) 28.7 29.7 30.7 dB

(referenced to LN) to RECO
gain voltage range between pins

−3 − +15 dB

RECO and QR
voltage gain from pin TXIN to

TXOUT
voltage gain from pin HFTX to LN V
voltage gain from pin HFRX to

LSAO

V

= 3 mV (RMS);

TXIN

R

= 30.1 kΩ

GATX

= 15 mV (RMS) 33.5 34.7 35.9 dB

HFTX

V

= 20 mV (RMS);

HFRX

= 255 kΩ

R

GALS

referenced to

SWR

12.7 15.2 17.7 dB

25.5 28 30.5 dB

−40 − +12 dB

365 kΩ

gain control range for transmit and
receive amplifiers affected by the
AGC; with respect to I

=15mA

line

I

= 70 mA; on

line

G

v(MIC-LN)

G

v(IR-AUXO)

, G

v(IR-RECO)

5.45 6.45 7.45 dB

and

ORDERING INFORMATION

TYPE

NUMBER

NAME DESCRIPTION VERSION

PACKAGE

TEA1099H QFP44 plastic quad flat package; 44 leads (lead length 1.3 mm);

body 10 × 10 × 1.75 mm

1999 Apr 08 3

SOT307-2

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

BLOCK DIAGRAM

handbook, full pagewidth

LN

AGC

GND

HFTX 36

TXAUX 43

DTMF 32

15

18

13

ATT.

STARTER

LINE CURRENT DETECTION
LOW VOLTAGE BEHAVIOUR

AGC

Tail currents for preamps

REG SLPE
16 14

SWITCH

TEA1099H

SUPPLY

D6

MANAGEMENT

POWER-DOWN

CURRENT SOURCES

ANALOG

MULTIPLEXER

CONTROL

TEA1099H

V

10

BB

9

ESI
V

19

DD

20

MICS

38

PD

HFC37
MUTT39
MUTR40
AUXC41

MIC+ 31
MIC−

TXIN 28

TSEN 4
TENV 3

TNOI 2

RNOI 5
RENV 7
RSEN 6

GALS 11

LSAO 12

DLC 8

AUXO 44

RECO 35
GARX 34

QR 33

30

TX AND RX

ENVELOPE AND NOISE

DETECTORS

DYNAMIC

LIMITER

BUFFERS

AND

COMPARATORS

DUCO LOGIC
SWT STATUS

VOICE

SWITCH

VOLUME

CONTROL

ATT.

GATX27

TXOUT26
GNDTX29

SWT24
IDT25

STAB21

SWR22

VOL23

HFRX

1

IR17

RAUX42

Fig.1 Block diagram.

1999 Apr 08 4

MGM296

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

PINNING

SYMBOL PIN DESCRIPTION

HFRX 1 receive input for loudspeaker

amplifier or auxiliary receive
amplifier

TNOI 2 transmit noise envelope timing

adjustment

TENV 3 transmit signal envelope timing

adjustment

TSEN 4 transmit signal envelope sensitivity

adjustment

RNOI 5 receive noise envelope timing

adjustment

RSEN 6 receive signal envelope sensitivity

adjustment

RENV 7 receive signal envelope timing

adjustment

DLC 8 dynamic limiter capacitor for the

loudspeaker amplifier
ESI 9 external supply input
V

BB

GALS 11 loudspeaker amplifier gain

LSAO 12 loudspeaker amplifier output
GND 13 ground reference
SLPE 14 line current sense
LN 15 positive line terminal
REG 16 line voltage regulator decoupling
IR 17 receive amplifier input
AGC 18 automatic gain control/line loss

V

DD

10 stabilized supply for internal

circuitry

adjustment

compensation

19 3.35 V regulated voltage supply for

the microcontroller

TEA1099H

SYMBOL PIN DESCRIPTION

MICS 20 microphone supply output
STAB 21 reference current adjustment
SWR 22 switching range adjustment
VOL 23 loudspeaker volume adjustment
SWT 24 switch-over timing adjustment
IDT 25 Idle mode timing adjustment
TXOUT 26 HF microphone amplifier output
GATX 27 HF microphone amplifier gain

adjustment
TXIN 28 HF microphone amplifier input
GNDTX 29 ground reference for microphone

amplifiers
MIC− 30 negative HS microphone amplifier

input
MIC+ 31 positive HS microphone amplifier

input
DTMF 32 dual tone multi-frequency input
QR 33 earpiece amplifier output
GARX 34 earpiece amplifier gain adjustment
RECO 35 receive amplifier output
HFTX 36 transmit input for line amplifier or

auxiliary receive amplifier
HFC 37 logic input
PD 38 power-down input (active LOW)
MUTT 39 logic input (active LOW)
MUTR 40 logic input (active LOW)
AUXC 41 logic input
RAUX 42 auxiliary receive amplifier input
TXAUX 43 auxiliary transmit amplifier input
AUXO 44 auxiliary amplifier output

1999 Apr 08 5

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

handbook, full pagewidth

RAUX

TXAUX
43

42

AUXC

MUTR

41

40

TEA1099H

HFRX

TNOI
TENV
TSEN

RNOI
RSEN
RENV

DLC

ESI

V

BB

GALS

AUXO
44

1
2
3
4

5
6
7
8
9

10
11

MUTT
39

PD

38

HFC
37

HFTX

36

RECO
35

GARX
34

33
32
31
30
29
28
27
26
25
24
23

TEA1099H

QR
DTMF
MIC+
MIC−
GNDTX
TXIN
GATX
TXOUT
IDT
SWT
VOL

12

13

14

15

LN

GND

SLPE

LSAO

Fig.2 Pin configuration.

FUNCTIONAL DESCRIPTION

All data given in this chapter are typical values, except
when otherwise specified.

Supplies

L

INE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE,

REG

AND V

BB

)

The supply for the TEA1099H and its peripherals is
obtained from the line. The IC generates a stabilized
reference voltage (V

) between pins SLPE and GND.

ref

This reference voltage is equal to 3.7 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 6.1 V for line currents
higher than 45 mA. For line currents below 9 mA, the
internal reference voltage generating V

is automatically

ref

adjusted to a lower value. This is the so-called low voltage
area and the TEA1099H has limited performances in this
area (see Section “Low voltage behaviour”). This
reference voltage is temperature compensated.

21

16

REG

17

18

19

IR

AGC

DD

V

20

MICS

STAB

22

SWR

MGM297

The voltage between pins SLPE and REG is used by the
internal regulator to generate the stabilized reference
voltage and is decoupled by means of a capacitor between
pins LN and REG. This capacitor converted into an
equivalent inductance realizes the set impedance
conversion from its DC value (R

) to its AC value (done

SLPE

by an external impedance).
The IC regulates the line voltage at pin LN and it can be

calculated as follows:

V
I

V

=

LN

SLPEIline

refRSLPE

I×+

SLPE

Ix–=
where:
I

= line current

line

Ix= current consumed on pin LN (approximately a few µA)
I

= current flowing through the R

SLPE

SLPE

resistor

1999 Apr 08 6

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

The preferred value for R
will affect more than the DC characteristics; it also
influences the transmit gains to the line, the gain control
characteristic, the sidetone level and the maximum output
swing on the line.

As can be seen from Fig.3, the internal circuitry is supplied
by pin VBB, which is a strong supply point combined with
the line interface. The line current is flowing through the
R

resistor and is sunk by the VBB voltage stabilizer,

SLPE

becoming available for a loudspeaker amplifier or any
peripheral IC. Its voltage is equal to 3.0 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 5.3 V for line currents
greater than 45 mA. It is temperature compensated.
See Fig.4 for the main DC voltages.

is 20 Ω. Changing this value

SLPE

TEA1099H

The aim of the current switch TR1 and TR2 is to reduce
distortion of large AC line signals. Current I
to VBB via TR1 when the voltage on SLPE is greater than
VBB+ 0.25 V. When the voltage on SLPE is lower than this
value, the current I

The reference voltage V

is shunted to GND via TR2.

SLPE

can be increased by connecting

ref

an external resistor between pins REG and SLPE.
For large line currents, this increase can slightly affect
some dynamic performances such as maximum signal
level on the line for 2% Total Harmonic Distortion (THD).
The voltage on pin VBB is not affected by this external
resistor.

is supplied

SLPE

handbook, full pagewidth

LN

REG

GND

C

REG

4.7 µF

SLPE

R

SLPE

20 Ω

TP1

D1

R3

R2

TN1

R1

from

preamp

J1

Fig.3 Line interface principle.

TR2

GND

TR1

E1

TN2

J2

GND

E2

MGM298

D1

V

BB

1999 Apr 08 7

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

handbook, full pagewidth

8

voltages

(V)

6

4

2

0

0 0.01

0.02 0.05

TEA1099H

FCA049

LN

SLPE

V

BB

V

DD

MICS

0.040.03

I

line

(A)

0.070.06

Fig.4 Main DC voltages.

EXTERNAL SUPPLY (PINS ESI AND VBB)
The TEA1099H can be supplied by the line as well as by

external power sources (voltage or current sources) that
must be connected to pin ESI.

The IC will choose which supply to use according to the
voltage it can provide. A voltage supply on ESI is efficient
only if its value is greater than the working voltage of the
internal V

voltage stabilizer. Otherwise the IC continues

BB

to be line powered. The current consumed on this source
is at least equal to the internal consumption. It increases
with the voltage difference between the value forced on
ESI and the working voltage of the internal stabilizer.
The excess current compared to the internal consumption
becomes then available for other purposes such as
supplying a loudspeaker amplifier. The voltage source
should not exceed 6 V. If the value of the external voltage
source can be lower than the working voltage of the
internal stabilizer, an external diode is required to avoid
reverse current flowing into the external power supply.

In case of current source, the voltage on VBB and ESI
depends on the current available. It is internally limited to

6.6 V. The current source should not exceed 140 mA.

SUPPLY FOR MICROCONTROLLER (PIN V

V

DD

The voltage on V

supply point follows the voltage on V

DD

DD

)

BB

with a difference typically equal to 250 mV and is internally
limited to 3.35 V. This voltage is temperature
compensated. This supply point can provide a current up
to 3 mA typically. Its internal consumption stays low (a few
10 nA) as long as VDD does not exceed 1.5 V (see Fig.5).

An external voltage can be connected on VDD with limited
extra consumption on VDD (typically 100 µA). This voltage
source should not be lower than 3.5 V or higher than 6 V.

VBB and VDD can supply external circuits in the limit of
currents provided either from the line or from ESI, taking
into account the internal current consumption.

1999 Apr 08 8

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

8

10

handbook, full pagewidth

I

DD

(pA)

7

10

6

10

5

10

4

10

3

10

2

10

10

1.0

1.5 2.5 3.0

2.0

TEA1099H

FCA050

VDD (V)

Fig.5 Current consumption on VDD.

SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX)
The MICS output can be used as a supply for electret

microphones. Its voltage is equal to 2.0 V; it can source
current up to 1 mA and has an output impedance equal to
200 Ω.

L

OW VOLTAGE BEHAVIOUR

For line currents below 9 mA, the reference voltage is
automatically adjusted to a lower value; the VBB voltage
follows the SLPE voltage with 250 mV difference.
The excess current available for other purposes than DC
biasing of the IC becomes small. In this low voltage area,
the IC has limited performances.

When the VBB voltage reaches 2.7 V, the VBB detector of
the receive dynamic limiter on LSAO acts and discharges
the DLC capacitor. The loudspeaker is then automatically
disabled below this DC voltage.

When VBB becomes lower than 2.5 V, the TEA1099H is
forced into a low voltage mode whatever the levels on the
logic inputs are. It is a speech mode with reduced
performances only enabling the microphone channel
(between the MIC inputs and LN) and the earpiece
amplifier.

These two channels are able to deliver signals for line
currents as small as 3 mA. The HFC input is tied to GND
sinking a current typically equal to 300 µA.

OWER-DOWN MODE (PINS PD AND AUXC)

P
To reduce current consumption during dialling or register

recall (flash), the TEA1099H is provided with a
power-down input (PD). When the voltage on both pinsPD
and AUXC is LOW, the current consumption from VBB and
VDD is reduced to 460 µA typically. Therefore a capacitor
of 470 µF on VBB is sufficient to power the TEA1099H
during pulse dialling or flash. The

PD input has a pull-up
structure, while AUXC has a pull-down structure. In this
mode, the capacitor C

R

INGER MODE (PINS ESI, V

is internally disconnected.

REG

, AUXC AND PD)

BB

The TEA1099H is designed to be activated during the
ringing phase. The loudspeaker amplifier can be used for
the ringing signal. The IC must be powered by an external
supply on ESI, while applying a HIGH level on the logic
input AUXC and a LOW level on

PD input. Only the HFRX
input and the LSAO output are activated, in order to limit
the current consumption. Some dynamic limitation is
provided to prevent the LSAO output from saturation and
VBB from being discharged below 2.7 V.

1999 Apr 08 9

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

Transmit channels (pins MIC+, MIC−, DTMF, TXAUX,
HFTX and LN)

ANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND

H
LN)

The TEA1099H has symmetrical microphone inputs.
The input impedance between MIC+ and MIC− is
70 kΩ(typ.). The voltage gain between pins MIC+/MIC−
and LN is set to 44.3 dB. Without limitation from the output,
the microphone input stage can accommodate signals up
to 18 mV (RMS) at room temperature for 2% of THD.
The microphone inputs are biased at one diode voltage.

Automatic gain control is provided for line loss
compensation.

DTMF

AMPLIFIER (PINS DTMF, LN AND RECO)

The TEA1099H has an asymmetrical DTMF input.
The input impedance between DTMF and GND is
20 kΩ (typ.). The voltage gain between pins DTMF and LN
is set to 25.35 dB. Without limitation from the output, the
input stage can accommodate signals up to
180 mV (RMS) at room temperature for 2% of THD.

When the DTMF amplifier is enabled, dialling tones may
be sent on the line. These tones can be heard in the
earpiece or in the loudspeaker at a low level. This is called
the confidence tone. The voltage attenuation between pins
DTMF and RECO is typically equal to −16.5 dB.

The DC biasing of this input is 0 V.
The automatic gain control has no effect on these

channels.

UXILIARY TRANSMIT AMPLIFIER (PINS TXAUX AND LN)

A
The TEA1099H has an asymmetrical auxiliary input

TXAUX. The input impedance between TXAUX and GND
is 20 kΩ (typ.). The voltage gain between pins TXAUX and
LN is set to 12.5 dB. Without limitation from the output, the
input stage can accommodate signals up to 1.2 V (RMS)
at room temperature for 2% of THD. The TXAUX input is
biased at two diodes voltage.

Automatic gain control is provided for line loss
compensation.

TEA1099H

ANDSFREE TRANSMIT OUTPUT STAGE (PINS HFTX AND LN)

H
The TEA1099H has an asymmetrical HFTX input, which is

mainly intended for use in combination with the TXOUT
output. The input impedance between HFTX and GND is
20 kΩ (typ.). The voltage gain between pins HFTX and LN
is set to 34.7 dB. Without limitation from the output, the
input stage can accommodate signals up to 95 mV (RMS)
at room temperature for 2% of THD. The HFTX input is
biased at two diodes voltage.

Automatic gain control is provided for line loss
compensation.

M

ICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC−

AND TXOUT)

The voltage gain between the microphone inputs
MIC+/MIC− and the output TXOUT is set to 49.8 dB. This
channel gives an image of the signal sent on the line while
speaking in the handset microphone. Using external
circuitry, this signal can be used for several purposes such
as sending dynamic limitation or anti-howling in a
listening-in application. The TXOUT output is biased at two
diodes voltage.

The automatic gain control has no effect on these
channels.

Receive channels (pins IR, RAUX, RECO, GARX and QR)

RX

AMPLIFIER (PINS IR AND RECO)

The receive amplifier has one input IR which is referred to
the line. The input impedance between pins IR and LN is
20 kΩ (typ.) and the DC biasing between these pins is
equal to one diode voltage. The gain between pins IR
(referred to LN) and RECO is typically equal to 29.7 dB.
Without limitation from the output, the input stage can
accommodate signals up to 50 mV (RMS) at room
temperature for 2% of THD.

This receive amplifier has a rail-to-rail output RECO, which
is designed for use with high ohmic (real) loads (larger
than 5 kΩ). This output is biased at two diodes voltage.

Automatic gain control is provided for line loss
compensation.

1999 Apr 08 10

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

EARPIECE AMPLIFIER (PINS GARX AND QR)
The earpiece amplifier is an operational amplifier having

its output (QR) and its inverting input (GARX) available.
Its input signal comes, via a decoupling capacitor, from the
receive RECO output. It is used in combination with two
resistors to get the required gain or attenuation compared
to the receive gain. It can be chosen between

−3 and +15 dB.
Two external capacitors C

and QR) and C

(connected between GARX and

GARS

GND) ensure stability. The C
1st-order low-pass filter. The cut-off frequency
corresponds to the time constant C
The relationship C

GARS

The earpiece amplifier has a rail-to-rail output QR, biased
at two diodes voltage. It is designed for use with low ohmic
(real) loads (150 Ω) or capacitive loads (100 nF in series
with 100 Ω).

A

UXILIARY RECEIVE AMPLIFIER (PINS RAUX AND RECO)

The auxiliary receive amplifier has an asymmetrical input
RAUX; it uses the RECO output. Its input impedance
between pins RAUX and GND is typically equal to 20 kΩ.
The voltage gain between pins RAUX and RECO is equal
to−2.4 dB. Without any limitation from the output, the input
stage can accommodate signals up to 0.95 V (RMS) at
room temperature for 2% of THD.

This auxiliary amplifier has a rail-to-rail output RECO,
which is designed for use with high ohmic (real) loads
(larger than 5 kΩ). This output is biased at two diodes
voltage.

The automatic gain control has no effect on this channel.

Auxiliary amplifiers using AUXO (pins MIC+, MIC−,
HFTX, IR and AUXO)

The TEA1099H has an auxiliary output AUXO, biased at
two diodes voltage. This output stage is a rail-to-rail one,
designed for use with high ohmic (real) loads (larger than
5kΩ). The AUXO output amplifier is used in three different
channels, two transmit channels and one receive channel.

(connected between GARX

GAR

capacitor provides a

GAR

× Re2.

GAR

≥ 10 × C

must be fulfilled.

GAR

TEA1099H

A

UXILIARY AMPLIFIERS USING THE MICROPHONE INPUTS

(PINS MIC+, MIC− AND AUXO)
The auxiliary transmit amplifier using the microphone

MIC+ and MIC− inputs has a gain of 25.5 dB referenced to
AUXO. Without limitation from the output, the input stage
can accommodate signals up to 16 mV (RMS) at room
temperature for 2% of THD.

The automatic gain control has no effect on this channel.

UXILIARY AMPLIFIERS USING HFTX

A
(

PINS HFTX AND AUXO)

The auxiliary transmit amplifier using the HFTX input has
a gain of 15.2 dB referenced to AUXO.

The automatic gain control has no effect on this channel.

RX

AMPLIFIER USING IR (PINS IR AND AUXO)

The auxiliary receive amplifier uses pin IR as input.
The input is referred to LN and the DC biasing between
these two pins is one diode voltage. The voltage gain
between the input IR (referenced to LN) and the output
AUXO is typically equal to 32.8 dB, which compensates
typically the attenuation provided by the anti-sidetone
network.

Automatic gain control is provided for line loss
compensation.

AGC (pin AGC)

The TEA1099H performs automatic line loss
compensation, which fits well with the true line attenuation.
The automatic gain control varies the gain of some
transmit and receive amplifiers in accordance with the DC
line current. The control range is 6.45 dB for G
G

v(IR-RECO)

and G

v(IR-AUXO)

and 6.8 dB for the other

v(MIC-LN)

affected channels, which corresponds approximately to a
line length of 5.5 km for a 0.5 mm twisted-pair copper
cable.

To enable this gain control, the AGC pin must be shorted
to pin LN. The start current for compensation corresponds
to a line current equal to typically 23 mA and the stop
current to 57 mA. The start current can be increased by
connecting an external resistor between pins AGC and LN.
It can be increased up to 40 mA (using a resistor typically
equal to 80 kΩ). The start and stop current will be
maintained in a ratio equal to 2.5. By leaving the AGC pin
open-circuit, the gain control is disabled and no line loss
compensation is performed.

,

1999 Apr 08 11

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

Handsfree application

As can be seen from Fig.3, a loop is formed via the
sidetone network in the line interface part and the acoustic
coupling between loudspeaker and microphone of the
handsfree part. When this loop gain is greater than 1,
howling occurs. In a full duplex application, this would be
the case. The loop-gain has to be much lower than 1 and
therefore has to be decreased to avoid howling. This is
achieved by the duplex controller. The duplex controller of
the TEA1099H detects which channel has the ‘largest’
signal and then controls the gain of the microphone
amplifier and the loudspeaker amplifier so that the sum of
the gains remains constant.

As a result, the circuit in this handsfree application can be
in three stable modes:

1. Transmit mode (TX mode).
The gain of the microphone amplifier is at its maximum

and the gain of the loudspeaker amplifier is at its
minimum.

2. Receive mode (RX mode).
The gain of the loudspeaker amplifier is at its

maximum and the gain of the microphone amplifier is
at its minimum.

3. Idle mode.
The gain of the amplifiers is halfway between their

maximum and minimum value.

TEA1099H

The difference between the maximum gain and minimum
gain is called the switching range.

ANDSFREE MICROPHONE CHANNEL: PINS TXIN, GATX,

H
TXOUT

The TEA1099H has an asymmetrical handsfree
microphone input TXIN with an input resistance of 20 kΩ.
The DC biasing of the input is 0 V. The gain of the input
stage varies according to the mode of the TEA1099H.
In the transmit mode, the gain is at its maximum; in the
receive mode, it is at its minimum and in the Idle mode it is
halfway between maximum and minimum.

Switch-over from one mode to the other is smooth and
click-free. The output TXOUT is biased at two diodes
voltage and has a current capability equal to 20 µA (RMS).
In the transmit mode, the overall gain of the microphone
amplifier (from pins TXIN to TXOUT) can be adjusted from
0 up to 31 dB to suit specific application requirements.
The gain is proportional to the value of R

15.2 dB with R
output, the microphone input stage can accommodate
signals up to 18 mV (RMS) at room temperature for 2% of
THD.

AND GNDTX (see Fig.7)

= 30.1 kΩ. Without limitation from the

GATX

and equals

GATX

handbook, full pagewidth

telephone

line

sidetone

HYBRID

Fig.6 Handsfree telephone set principles.

1999 Apr 08 12

acoustic
coupling

DUPLEX

CONTROL

MGM299

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

handbook, full pagewidth

V

BB

C

MIC

R

MIC

28

TXIN

to

envelope

detector

V I I V

from
voice
switch

GATX 27

TXOUT

GNDTX

MGM300

TEA1099H

R

GATX

26

29

LOUDSPEAKER CHANNEL

handbook, full pagewidth

R

GALS

C

GALS

C

LSAO

C

DLC

Fig.7 Handsfree microphone channel.

to

GALS

11

V

12

LSAO

DLC

8

BB

V I

DYNAMIC

LIMITER

logic

to/from

voice switch

I V

to

envelope

detector

VOLUME

CONTROL

HFRX

VOL

MGM301

1

23

R

VOL

Fig.8 Loudspeaker channel.

1999 Apr 08 13

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

Loudspeaker amplifier: pins HFRX, GALS and LSAO

The TEA1099H has an asymmetrical input for the
loudspeaker amplifier with an input resistance of 20 kΩ
between pins HFRX and GND. It is biased at two diodes
voltage. Without limitation from the output, the input stage
can accommodate signals up to 580 mV (RMS) at room
temperature for 2% of THD.

The gain of the input stage varies according to the mode
of the TEA1099H. In the receive mode, the gain is at its
maximum; in the transmit mode, it is at its minimum and in
the Idle mode, it is halfway between maximum and
minimum. Switch-over from one mode to the other is
smooth and click-free. The rail-to-rail output stage is
designed to power a loudspeaker connected as a
single-ended load (between pins LSAO and GND).

In the receive mode, the overall gain of the loudspeaker
amplifier can be adjusted from 0 up to 35 dB to suit specific
application requirements. The gain from HFRX to LSAO is
proportional to the value of R
R

= 255 kΩ. A capacitor connected in parallel with

GALS

R

is recommended and provides a 1st-order low-pass

GALS

filter.

Volume control: pin VOL

The loudspeaker amplifier gain can be adjusted with the
potentiometer R

. A linear potentiometer can be used to

VOL

obtain logarithmic control of the gain at the loudspeaker
amplifier. Each 1.9 kΩ increase of R
loss of 3 dB. The maximum gain reduction with the volume
control is internally limited to the switching range.

Dynamic limiter: pin DLC

The dynamic limiter of the TEA1099H prevents clipping of
the loudspeaker output stage and protects the operation of
the circuit when the supply voltage at VBB falls below 2.7 V.

and equals 28 dB with

GALS

results in a gain

VOL

TEA1099H

When the supply voltage drops below an internal threshold
voltage of 2.7 V, the gain of the loudspeaker amplifier is
rapidly reduced (approximately 1 ms). When the supply
voltage exceeds 2.7 V, the gain of the loudspeaker
amplifier is increased again.

By forcing a level lower than 0.2 V on pin DLC, the
loudspeaker amplifier is muted and the TEA1099H is
automatically forced into the transmit mode.

RX amplifier using AUXO

In some cordless applications, the handset may be used to
perform handsfree function (instead of the base). As the
TEA1099H is in the base and the active loudspeaker is in
the handset, a second receive output is required.
The amplifier using HFRX as an input and AUXO as an
output will be used for communication with the RF IC,
sending information to the handset. It will be controlled by
the duplex controller in the same way as the loudspeaker
amplifier.

The voltage gain between pins HFRX and AUXO is equal
to 3.7 dB. The amplifier can manage the same input signal
as the loudspeaker amplifier. It has a rail-to-rail output,
biased by two diodes, designed for use with high ohmic
(real) loads (larger than 5 kΩ). The volume control and the
dynamic limiter are not active on this channel.

D

UPLEX CONTROLLER

Signal and noise envelope detectors: pins TSEN, TENV,
TNOI, RSEN, RENV and RNOI

The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelope detectors are shown in
Fig.9.

Hard clipping of the loudspeaker output stage is prevented
by rapidly reducing the gain when the output stage starts
to saturate. The time in which gain reduction is effected
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signal no longer cause saturation.
The gain of the loudspeaker amplifier then returns to its
normal value within the clipping release time (typically
250 ms). Both attack and release times are proportional to
the value of the capacitor C

. The total harmonic

DLC

distortion of the loudspeaker output stage, in reduced gain
mode, stays below 2% up to 10 dB (minimum) of input
voltage overdrive [providing V

HFRX

is below

580 mV (RMS)].

1999 Apr 08 14

For the transmit channel, the input signal at TXIN is 40 dB
amplified to TSEN. For the receive channel, the input
signal at HFRX is 0 dB amplified to RSEN. The signals
from TSEN and RSEN are logarithmically compressed and
buffered to TENV and RENV respectively. The sensitivity
of the envelope detectors is set with R

TSEN

and R

RSEN

.
The capacitors connected in series with the two resistors
block any DC component and form a 1st-order high-pass
filter. In the basic application (see Fig.16) it is assumed
that V
nominal and both R
With the value of C

= 1 mV (RMS) and V

TXIN

TSEN
TSEN

and R

and C

= 100 mV (RMS)

HFRX

have a value of 10 kΩ.

RSEN

at 100 nF, the cut-off

RSEN

frequency is at 160 Hz.

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

The buffer amplifiers which apply the compressed signals
to TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Together with
the capacitor C
envelope monitors can be set. In the basic application, the
value of both capacitors is 470 nF. Because of the
logarithmic compression, each 6 dB signal increase
means 18 mV increase of the voltage on the envelopes
TENV or RENV at room temperature. Thus, timings can be
expressed in dB/ms. At room temperature, the 120 µA
sourced current corresponds to a maximum rise-slope of
the signal envelope of 85 dB/ms. This is sufficient to track
normal speech signals. The 1 µA current sunk by TENV or
RENV corresponds to a maximum fall-slope of 0.7 dB/ms.
This is sufficient for a smooth envelope and also eliminates
the effect of echoes on switching behaviour.

TENV

and C

, the timing of the signal

RENV

TEA1099H

To determine the noise level, the signals on TENV and
RENV are buffered to TNOI and RNOI. These buffers have
a maximum source current of 1 µA and a maximum sink
current of 120 µA. Together with the capacitors C
C

, the timings can be set. In the basic application

RNOI

(see Fig.16) the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms.

This is small enough to track background noise and not to
be influenced by speech bursts. The 120 µA current that is
sunk corresponds to a maximum fall-slope of
approximately 8.5 dB/ms. However, during the decrease
of the signal envelope, the noise envelope tracks the
signal envelope so it will never fall faster than
approximately 0.7 dB/ms. The behaviour of the signal
envelope and noise envelope monitors is illustrated in
Fig.10.

TNOI

and

handbook, full pagewidth

DUPLEX CONTROLLER

from
microphone
amplifier

to logicto logic

LOG

from
loudspeaker
amplifier

TSEN

432 675

R

C

TENV TNOI RSEN RENV RNOI

TSEN

TSEN

C

TENV

C

TNOI

LOG

R

RSEN

C

RSEN

C

RENV

C

RNOI

MGM302

Fig.9 Signal and noise envelope detectors.

1999 Apr 08 15

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

handbook, full pagewidth

INPUT SIGNAL

SIGNAL ENVELOPE

A: 85 dB/ms
B: 0.7 dB/ms

NOISE ENVELOPE

B: 0.7 dB/ms
C: 0.07 dB/ms

4 mV (RMS)

A

C

36 mV

36 mV

Fig.10 Signal and noise envelope waveforms.

1 mV (RMS)

B

B

TEA1099H

MBG354

A

C

B

B

time

Decision logic: pins IDT and SWT

handbook, full pagewidth

TENV

3

TNOI

2

ATTENUATOR

RENV

7

RNOI

5

from logic

from dynamic

limiter

13 mV

13 mV

V

dt

DUPLEX CONTROLLER

LOGIC

XX11−10 µA
X10X

1X0X
XX10 0
000X 0

25

IDT

V

ref

(1)

SWT

+10 µA
+10 µA

R

IDT

24

C

SWT

(1) When V

< 0.2 V, −10 µA is forced.

DLC

Fig.11 Decision logic.

1999 Apr 08 16

MGM303

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

The TEA1099H selects its mode of operation (transmit,
receive or Idle mode) by comparing the signal and the
noise envelopes of both channels. This is executed by the
decision logic. The resulting voltage on pin SWT is the
input for the voice switch.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
V

− V

ENV

threshold is implemented in both channels.
The signal on pin TXIN contains both the speech and the

input signal from the loudspeaker (acoustic coupling).
When receiving, the contribution from the loudspeaker
overrules the speech. As a result, the signal envelope on
TENV is formed mainly by the loudspeaker signal.
To correct this, an attenuator is connected between TENV
and the TENV/RENV comparator. Its attenuation equals
that applied to the microphone amplifier.

When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1099H to go into the Idle mode and the user of the set
would hear the dial tone fade away. To prevent this, a dial
tone detector is incorporated which, in standard
applications, does not consider input signals between
HFRX and GND as noise when they have a level greater
than 25 mV (RMS). This level is proportional to R

In the same way, a transmit detector is integrated which, in
standard applications, does not consider input signals
between TXIN and GNDTX as noise when they have a
level greater than 0.75 mV (RMS). This level is
proportional to R

The output of the decision logic is a current source
(see Fig.11). The logic table gives the relationship
between the inputs and the value of the current source.
It can charge or discharge the capacitor C
current of 10 µA (switch-over). If the current is zero, the
voltage on SWT becomes equal to the voltage on IDT via
the high-ohmic resistor R
difference between SWT and IDT determines the mode of
the TEA1099H and can vary between −400 and +400 mV
(see Table 1).

The switch-over timing can be set with C
mode timing with C
given in Fig.16, C
enables a switch-over time from transmit to receive mode
or vice-versa of approximately 13 ms (580 mV swing on
SWT).

= 13 mV. This so called speech/noise

NOI

.

TSEN

(idling). The resulting voltage

IDT

SWT

and R

SWT

is 220 nF and R

SWT

. In the basic application

IDT

is 2.2 MΩ. This

IDT

with a

SWT

, the Idle

RSEN

.

TEA1099H

The switch-over time from Idle mode to transmit mode or
receive mode is approximately 4 ms (180 mV swing on
SWT).

The switch-over time, from receive mode or transmit mode
to Idle mode is equal to 4 × R

IDTCSWT

2 seconds (Idle mode time).
The input DLC overrules the decision logic. When the

voltage on pin DLC goes lower than 0.2 V, the capacitor
C

is discharged with 10 µA thus resulting in the

SWT

transmit mode.

Table 1 Modes of TEA1099H

V

− V

SWT

(mV) MODE

IDT

<−180 transmit mode

0 Idle mode

>180 receive mode

Voice-switch: pins STAB and SWR

A diagram of the voice-switch is illustrated in Fig.12. With
the voltage on SWT, the TEA1099H voice-switch
regulates the gains of the transmit and the receive
channels so that the sum of both is kept constant.

In the transmit mode, the gain of the microphone amplifier
is at its maximum and the gain of the loudspeaker amplifier
is at its minimum. In the receive mode, the opposite
applies. In the Idle mode, both microphone and
loudspeaker amplifier gains are halfway. The difference
between maximum and minimum is the so called switching
range. This range is determined by the ratio of
R

and R

SWR

R

should be 3.65 kΩ and sets an internally used

STAB

and is adjustable between 0 and 52 dB.

STAB

reference current. In the basic application diagram given in
Fig.16, R

is 365 kΩ which results in a switching range

SWR

of 40 dB. The switch-over behaviour is illustrated in Fig.13.
In the receive mode, the gain of the loudspeaker amplifier

can be reduced using the volume control. Since the voice
switch keeps the sum of the gains constant, the gain of the
microphone amplifier is increased at the same time (see
dashed curves in Fig.13). In the transmit mode, however,
the volume control has no influence on the gain of the
microphone amplifier or the gain of the loudspeaker
amplifier. Consequently, the switching range is reduced
when the volume is reduced. At maximum reduction of
volume, the switching range becomes 0 dB.

and is approximately

1999 Apr 08 17

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

handbook, full pagewidth

DUPLEX CONTROLLER

to

microphone

amplifier

G

vtx

VOICE SWITCH

from

volume

control

loudspeaker

+ G

amplifier

vrx =

to

from

SWT

C

TEA1099H

R

STAB

21

STAB

(1)

R

SWR

22

SWR

MGM304

(1) C = constant.

handbook, halfpage

G

G

vrx

vtx,

(10 dB/div)

−400 −200 0 +400+200

Fig.12 Voice switch.

SWT −

MGM305

V

IDT

idle

Tx mode Rx mode

G

vtx

G

vrx

mode

V

(mV)

R

VOL
(Ω)

11400
7600
3800
0

0
3800
7600
11400

Fig.13 Switch-over behaviour.

1999 Apr 08 18

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

Logic inputs
Table 2 Selection of transmit and receive channels for 13 different application modes

LOGIC INPUTS

FEATURES

PD HFC MUTT MUTR AUXC

0 X X X 1 HFRX to LSAO ringer mode
0 X X X 0 flash, DC dialling
10000DTMF to LN; DTMF to RECO;

QR and MICS are active

10010MICtoAUXO; RAUX to RECO;

QR and MICS are active

10110MICS to LN; IR to RECO; IR to AUXO

MIC to TXOUT; QR and MICS are active

10101TXAUX to LN; IR to AUXO conversation using

11111TXIN to TXOUT; HFTX to LN;

IR to RECO; HFRX to AUXO
11011RAUX to RECO; HFRX to LSAO listening on the loudspeaker
11001TXAUX to LN; IR to AUXO;

RAUX to RECO; HFRX to LSAO

11000DTMF to LN; DTMF to RECO;

HFRX to LSAO; QR and MICS are

active
11101TXAUX to LN; IR to AUXO;

IR to RECO; HFRX to LSAO

11010TXIN to TXOUT; HFTX to AUXO;

RAUX to RECO; HFRX to LSAO;

MICS is active
11110TXIN to TXOUT; HFTX to LN;

IR to RECO; IR to AUXO;

HFRX to LSAO; MICS is active
11100MICtoLN; IR to RECO; IR to AUXO;

HFRX to LSAO; MIC to TXOUT; QR;

MICS is active

APPLICATION

EXAMPLES

DTMF dialling in handset
mode

cordless intercom with
corded handset

handset conversation

auxiliary I/O such as
cordless conversation

cordless: HF mode in
cordless handset

answering machine: play
and record messages;
listen to the recorded
message on the
loudspeaker

DTMF dialling in HF/GL
modes

answering machine: play
and record messages while
listening on the loudspeaker

cordless intercom with base

HF conversation mode

handset conversation with
group-listening

1999 Apr 08 19

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134); all DC levels are referenced to GND.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

LN

V

ESI

I

i(ESI)

V

n(max)

I

line(max)

P

tot

T

stg

T

amb

THERMAL CHARACTERISTICS

positive continuous line voltage −0.4 +12 V
repetitive line voltage during switch-on or line

−0.4 +13.2 V

interruption
positive continuous voltage on pin ESI −0.4 +6 V
input current at pin ESI − 140 mA
maximum voltage

on pins REG, SLPE, IR and AGC −0.4 V
on all other pins except V

DD

−0.4 VBB+ 0.4 V

+ 0.4 V

LN

maximum line current − 140 mA
total power dissipation T

=75°C − 720 mW

amb

IC storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient in free air 63 K/W

1999 Apr 08 20

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

160

handbook, full pagewidth

I

line

(mA)

120

80

40

0

3 91011

75864

TEA1099H

FCA029

(1)

(2)

(3)

(4)

(5)

V

SLPE

(V)

12

Fig.14 Safe operating area.

LINE T

(°C) P

amb

tot

(1) 35 1304
(2) 45 1158
(3) 55 1012
(4) 65 866
(5) 75 720

(mW)

1999 Apr 08 21

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

CHARACTERISTICS

I

= 15 mA; R

line

AUXC = LOW;
GND; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

L

INE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND V

V

SLPE

V

BB

I

line

∆V

SLPE(T)

∆V

BB(T)

I

BB

V

LN

EXTERNAL SUPPLY (PIN ESI)
V

ESI

I

i(ESI)

I

ESI(ext)

SUPPLY FOR PERIPHERALS (PIN VDD)
V

DD

∆V

DD(T)

I

DD

I

DD(o)

SLPE

=20Ω; Z

= 600 Ω; f = 1 kHz; T

line

=25°C; AGC pin connected to LN; PD = HIGH; HFC = LOW;

amb

MUTT = HIGH; MUTR = HIGH; measured according to test circuits; all DC levels are referenced to

)

BB

stabilized voltage between SLPE
and GND (V

ref

)

regulated supply voltage for
internal circuitry

I

= 15 mA 3.4 3.7 4 V

line

= 70 mA 5.7 6.1 6.5 V

I

line

I

= 15 mA 2.75 3.0 3.25 V

line

I

= 70 mA 4.9 5.3 5.7 V

line

line current for voltage increase start current − 18 − mA

stop current − 45 − mA

stabilized voltage variation with

T

= −25 to +75 °C −±60 − mV

amb

temperature referenced to 25 °C
regulated voltage variation with

T

= −25 to +75 °C −±30 − mV

amb

temperature referenced to 25 °C
current available on pin V

BB

speech mode − 11 − mA
handsfree mode − 9 − mA

line voltage I

external voltage supply allowed

=1mA − 1.55 − V

line

I

=4mA − 2.35 − V

line

= 15 mA 3.7 4.0 4.3 V

I

line

I

= 140 mA − 8.9 9.5 V

line

−− 6V

on pin ESI
voltage on pin ESI when supplied

by a current source
input current on pin ESI V
external current supply allowed

I

= 140 mA except in

ESI

− 6.6 − V

Power-down mode

= 3.5 V − 3.1 − mA

ESI

−− 140 mA

on pin ESI

regulated supply voltage on V

VBB> 3.35 V + 0.25 V

DD

3.1 3.35 3.6 V

(typ.)

− 0.25 − V

BB

regulated voltage variation with
temperature referenced to 25 °C

otherwise − V
T

= −25 to + 75 °C;

amb

−±30 − mV
VBB> 3.35 V + 0.25 V
(typ.)

current consumption on V
(capacitor disconnected)

DD

in trickle mode;
I

= 0 mA; VDD= 1.5 V;

line

− 15 150 nA

VBB discharging

> 3.35 V 60 100 −µA

V

DD

current available for peripherals VDD= 3.35 V −− −3mA

1999 Apr 08 22

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

SUPPLY FOR MICROPHONE (PIN MICS)
V

MICS

I

MICS

supply voltage for a microphone I

current available on MICS −− −1mA
POWER-DOWN INPUT (PIN PD)
V

IL

V

IH

I

i(pd)

I

BB(pd)

LOW-level input voltage −0.4 − 0.3 V

HIGH-level input voltage 1.8 − VBB+ 0.4 V

input current −−3 −6 µA

current consumption on V

BB

during power-down phase
RINGER MODE (PINS PD, AUXC, HFRX AND LSAO)
I

i(ESI)

G

v(HFRX-LSAO)

input current on pin ESI PD = LOW;

voltage gain from pin HFRX to

LSAO

Preamplifier inputs (pins MIC+, MIC−, IR, DTMF, TXIN, HFTX, HFRX, TXAUX and RAUX)
Z

 input impedance

i(MIC)

differential between
pins MIC+ and MIC−

single-ended between
pins MIC+/MIC− and GNDTX

Z

 input impedance between pins IR

i(IR)

and LN

Z

 input impedance between pins

i(DTMF)

DTMF and GND

Z

 input impedance between pins

i(TXIN)

TXIN and GNDTX

Z

 input impedance between pins

i(HFTX)

HFTX and GND

Z

 input impedance between pins

i(HFRX)

HFRX and GND

Z

 input impedance between pins

i(TXAUX)

TXAUX and GND

Z

 input impedance between pins

i(RAUX)

RAUX and GND

=0mA − 2.0 − V

MICS

PD = LOW;

− 460 −µA

AUXC = LOW

− 3.1 − mA
AUXC = HIGH;
V

= 3.5 V

ESI

PD = LOW;

− 28 − dB
AUXC = HIGH;
V

= 3.5 V;

ESI

V

= 20 mV (RMS);

HFRX

R

= 255 kΩ

GALS

− 70 − kΩ

− 35 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

− 20 − kΩ

1999 Apr 08 23

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TX amplifiers

TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND LN); note 1
G

v(MIC-LN)

voltage gain from pin MIC+/MIC−
to LN

∆G

v(f)

gain variation with frequency
referenced to 1 kHz

∆G

v(T)

gain variation with temperature

referenced to 25 °C
CMRR common mode rejection ratio − 80 − dB
THD total harmonic distortion at LN V

V

no(LN)

noise output voltage at pin LN;

pins MIC+/MIC− shorted through

200 Ω
∆G

v(mute)

gain reduction if not activated HFC = LOW;

DTMF AMPLIFIER (PINS DTMF, LN AND RECO); note 1
G

v(DTMF-LN)

∆G

v(f)

voltage gain from pin DTMF to LN V

gain variation with frequency

referenced to 1 kHz
∆G

v(T)

gain variation with temperature

referenced to 25 °C
∆G

v(mute)

G

v(DTMF-RECO)

gain reduction if not activated HFC = LOW;

voltage gain from pin DTMF to

RECO
TX AUXILIARY AMPLIFIER USING TXAUX (PINS TXAUX AND LN); note 1
G

v(TXAUX-LN)

voltage gain from pin TXAUX toLNV

V

= 5 mV (RMS) 43.3 44.3 45.3 dB

MIC

f = 300 to 3400 Hz −±0.25 − dB

T

= −25 to +75 °C −±0.25 − dB

amb

= 1.4 V (RMS) −− 2%

LN

I

line

= 4 mA;

−− 10 %

VLN= 0.12 V (RMS)
psophometrically

−−77.5 − dBmp

weighted (p53 curve)

60 80 − dB
MUTT = LOW;
MUTR = LOW;
AUXC = LOW;

= 50 mV (RMS) 24.35 25.35 26.35 dB

DTMF

f = 300 to 3400 Hz −±0.25 − dB

T

= −25 to +75 °C −±0.25 − dB

amb

60 80 − dB
MUTT = HIGH;
MUTR = HIGH;
AUXC = LOW

V

= 50 mV (RMS) −−16.5 − dB

DTMF

= 0.1 V (RMS) 11.5 12.5 13.5 dB

TXAUX

∆G

v(f)

gain variation with frequency

f = 300 to 3400 Hz −±0.25 − dB

referenced to 1 kHz

∆G

v(T)

gain variation with temperature

T

= −25 to +75 °C −±0.25 − dB

amb

referenced to 25 °C
THD total harmonic distortion at LN V
V

TXAUX(rms)

maximum input voltage at TXAUX

= 1.4 V (RMS) −− 2%

LN

I

= 70 mA; THD = 2% − 1.2 − V

line

(RMS value)
V

no(LN)

noise output voltage at pin LN; pin

TXAUX shorted to GND through

psophometrically
weighted (p53 curve)

200 Ω in series with 10 µF

1999 Apr 08 24

−−80.5 − dBmp

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

v(mute)

TX AMPLIFIER USING HFTX (PINS HFTX AND LN); note 1
G

v(HFTX-LN)

∆G

v(f)

∆G

v(T)

THD total harmonic distortion at LN V
V

HFTX(rms)

V

no(LN)

∆G

v(mute)

MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC− AND TXOUT); note 1
G

v(MIC-TXOUT)

∆G

v(f)

∆G

v(T)

gain reduction if not activated HFC = LOW;

MUTT = LOW;
MUTR = LOW;
AUXC = LOW

voltage gain from pin HFTX to LN V

gain variation with frequency

= 15 mV (RMS) 33.5 34.7 35.9 dB

HFTX

f = 300 to 3400 Hz −±0.25 − dB

referenced to 1 kHz

gain variation with temperature

T

= −25 to +75 °C −±0.25 − dB

amb

referenced to 25 °C

= 1.4 V (RMS) −− 2%

LN

maximum input voltage at HFTX

I

= 70 mA; THD = 2% − 95 − mV

line

(RMS value)

noise output voltage at pin LN; pin

HFTX shorted to GND through

psophometrically
weighted (p53 curve)

200 Ω in series with 10 µF

gain reduction if not activated HFC = LOW;

MUTT = HIGH;
MUTR = LOW;
AUXC = HIGH

voltage gain from pin MIC+/MIC−

V

= 2 mV (RMS) 48.3 49.8 51.3 dB

MIC

to TXOUT

gain variation with frequency

f = 300 to 3400 Hz −±0.1 − dB

referenced to 1 kHz

gain variation with temperature

T

= −25 to +75 °C −±0.35 − dB

amb

referenced to 25 °C

60 80 − dB

−−77.5 − dBmp

60 80 − dB

RX amplifiers

RX

AMPLIFIERS USING IR (PINS IR AND RECO); note 1

G

v(IR-RECO)

voltage gain from pin IR

VIR= 15 mV (RMS) 28.7 29.7 30.7 dB

(referenced to LN) to RECO
∆G

v(f)

gain variation with frequency

f = 30 to 3400 Hz −±0.25 − dB

referenced to 1 kHz
∆G

v(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referenced to 25 °C
V

IR(rms)(max)

maximum input voltage on IR

I

= 70 mA; THD = 2% − 50 − mV

line

(referenced to LN) (RMS value)
V

RECO(rms)(max)

maximum output voltage on

THD = 2% 0.75 0.9 − V

RECO (RMS value)
V

no(RECO)(rms)

noise output voltage at pin RECO;

pin IR is an open circuit

psophometrically
weighted (p53 curve)

(RMS value)

1999 Apr 08 25

−−88 − dBVp

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

v(mute)

RX EARPIECE AMPLIFIER (PINS GARX AND QR); note 1
∆G

v(RECO-QR)

V

QR(rms)(max)

V

no(QR)(rms)

RX AMPLIFIER USING RAUX (PINS RAUX AND RECO); note 1
G

v(RAUX-RECO)

∆G

v(f)

∆G

v(T)

V

RAUX(rms)

V

no(RECO)(rms)

∆G

v(mute)

gain reduction if not activated HFC = LOW;

MUTT = LOW;
MUTR = LOW;
AUXC = LOW

gain voltage range between pins

RECO and QR

maximum output voltage on QR

(RMS value)

noise output voltage at pin QR;

pin IR is an open-circuit (RMS

value)

voltage gain from pin RAUX to

sine wave drive;
RL= 150 Ω; THD < 2%

G

= 0 dB;

v(QR)

psophometrically
weighted (p53 curve)

V

= 0.4 V (RMS) −3.7 −2.4 −1.1 dB

RAUX

RECO

gain variation with frequency

f = 300 to 3400 Hz −±0.25 − dB

referenced to 1 kHz

gain variation with temperature

T

= −25 to +75 °C −±0.25 − dB

amb

referenced to 25 °C

maximum input voltage on RAUX

THD=2% − 0.95 − V

(RMS value)

noise output voltage at pin RECO;

pin RAUX shorted to GND

psophometrically

weighted (p53 curve)
through 200 Ω in series with
10 µF (RMS value)

gain reduction if not activated HFC = LOW;

MUTT = LOW;

MUTR = LOW;

AUXC = LOW

60 80 − dB

−3 − +15 dB

0.75 0.9 − V

−−88 − dBVp

−−100 − dBVp

60 80 − dB

Auxiliary amplifiers using AUXO

TX

AUXILIARY AMPLIFIER USING MIC+ AND MIC− (PINS MIC+, MIC− AND AUXO); note 1

G

v(MIC-AUXO)

voltage gain from pin MIC+/MIC−

V

= 10 mV (RMS) 24.2 25.5 26.8 dB

MIC

to AUXO

∆G

v(f)

gain variation with frequency

f = 300 to 3400 Hz −±0.1 − dB
referenced to 1 kHz

∆G

v(T)

gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referenced to 25°C

V

MIC(rms)

maximum input voltage on

THD=2% − 16 − mV
MIC+/MIC− (RMS value)

V

no(AUXO)

noise output voltage at pin AUXO;
pins MIC+/MIC− shorted to

psophometrically

weighted (p53 curve)
GNDTX through 200 Ω in series
with 10 µF (RMS value)

1999 Apr 08 26

−−91 − dBVp

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TX AUXILIARY AMPLIFIER USING HFTX (PINS HFTX AND AUXO); note 1
G

v(HFTX-AUXO)

voltage gain from pin HFTX to
AUXO

∆G

v(f)

gain variation with frequency
referenced to 1 kHz

∆G

v(T)

gain variation with temperature
referenced to 25 °C

V

AUXO(rms)

maximum output voltage on
AUXO (RMS value)

V

no(AUXO)(rms)

noise output voltage at pin AUXO;
pin HFTX shorted to GND through
200 Ω in series with 10 µF
(RMS value)

∆G

v(mute)

gain reduction if not activated HFC = LOW;

RX AMPLIFIER USING IR (PINS IR AND AUXO); note 1
G

v(IR-AUXO)

voltage gain from pin IR (referred
to LN) to AUXO

∆G

v(f)

gain variation with frequency
referenced to 1 kHz

∆G

v(T)

gain variation with temperature
referenced to 25 °C

V

AUXO(rms)

maximum output voltage on
AUXO (RMS value)

V

no(AUXO)(rms)

noise output voltage at pin AUXO;
pin IR is an open circuit (RMS
value)

∆G

v(mute)

gain reduction if not activated HFC = HIGH;

V

= 100 mV (RMS) 14.2 15.2 16.2 dB

HFTX

f = 300 to 3400 Hz −±0.1 − dB

T

= −25 to +75 °C −±0.1 − dB

amb

THD = 2% 0.8 0.9 − V

psophometrically

−−91.5 − dBVp

weighted (p53 curve)

60 80 − dB
MUTT = LOW;
MUTR = HIGH;
AUXC = LOW

VIR= 3 mV (RMS) 31.6 32.8 34 dB

f = 300 to 3400 Hz −±0.1 − dB

T

= −25 to +75 °C −±0.3 − dB

amb

THD = 2% 0.8 0.9 − V

psophometrically

−−85 − dBVp

weighted (p53 curve)

60 80 − dB
MUTT = LOW;
MUTR = HIGH;
AUXC = HIGH

Automatic Gain Control (pin AGC)

∆G

v(trx)

gain control range for transmit
and receive amplifiers affected
by the AGC; with respect to
I

=15mA

line

I

= 70 mA; on

line

G

v(MIC-LN)

and G
I

= 70 mA for other

line

transmit and receive
gains affected

I

start

highest line current for maximum
gain

I

stop

lowest line current for maximum
gain

1999 Apr 08 27

, G

v(IR-RECO)

v(IR-AUXO)

5.45 6.45 7.45 dB

5.8 6.8 7.8

− 23 − mA

− 57 − mA

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Logic inputs (pins HFC, AUXC, MUTT and MUTR)

V

IL

V

IH

I input current V

Handsfree

HF

MICROPHONE AMPLIFIER (PINS TXIN, TXOUT AND GATX);note 1

G

v(TXIN-TXOUT)

∆G

v

∆G

v(f)

∆G

v(T)

V

no(TXOUT)(rms)

∆G

v(mute)

HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND VOL); note 1
G

v(HFRX-LSAO)

∆G

v

∆G

v(f)

∆G

v(T)

∆G

v(vol)

V

HFRX(rms)(max)

V

no(LSAO)(rms)

LOW-level input voltage −0.4 − 0.3 V
HIGH-level input voltage 1.8 − VBB+ 0.4 V

=3V

BB

for pins HFC and AUXC − 36µA
for pins MUTT and MUTR −−2.5 −6 µA

voltage gain from pin TXIN to
TXOUT

voltage gain adjustment with
R

GATX

gain variation with frequency

V

= 8 mV (RMS);

TXIN

R

= 30.1 kΩ

GATX

12.7 15.2 17.7 dB

−15 − +16 dB

f = 300 to 3400 Hz −±0.1 − dB

referenced to 1 kHz
gain variation with temperature

T

= −25 to +75 °C −±0.15 − dB

amb

referenced to 25 °C
noise output voltage at pin

TXOUT; pin TXIN is shorted

psophometrically
weighted (p53 curve)

−−101 − dBmp

through 200 Ω in series with
10 µF to GNDTX (RMS value)

gain reduction if not activated HFC = HIGH;

60 80 − dB
MUTT = LOW;
MUTR = LOW;
AUXC = LOW

voltage gain from pin HFRX to
LSAO

voltage gain adjustment with
R

GALS

gain variation with frequency

V

= 20 mV (RMS);

HFRX

R

= 255 kΩ

GALS

25.5 28 30.5 dB

−28 − +7 dB

f = 300 to 3400 Hz −±0.3 − dB

referenced to 1 kHz
gain variation with temperature

T

= −25 to +75 °C −±0.3 − dB

amb

referenced to 25 °C
voltage gain variation related to

∆R

= 1.9 kΩ

VOL

when total attenuation
does not exceed the

−−3 − dB

switching range

maximum input voltage at pin
HFRX (RMS value)

I

=70mA

line

R

=33kΩ; for 2%

GALS

− 580 − mV

THD in the input stage

noise output voltage at pin LSAO;
pin HFRX is open circuit

psophometrically
weighted (p53 curve)

−−79 − dBVp

(RMS value)

1999 Apr 08 28

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

LSAO(rms)

I

LSAO(max)

∆G

v(mute)

DYNAMIC LIMITER (PINS LSAO AND DLC)
t

att

t

rel

THD total harmonic distortion at

V

BB(th)

MUTE LOUDSPEAKER (PIN DLC)
V

DLC(th)

I

DLC(th)

∆G

vrx(mute)

RX AMPLIFIER USING HFRX (PINS HFRX AND AUXO); note 1
G

v(HFRX-AUXO)

∆G

v(f)

∆G

v(T)

V

HFRX(rms)

V

no(AUXO)(rms)

∆G

v(mute)

output voltage (RMS value)
without external supply on pin ESI

maximum output current at pin

IBB= 0 mA; IDD=1mA

I

=18mA − 0.9 − V

line

I

=30mA − 1.3 − V

line

I

>50mA − 1.6 − V

line

150 300 − mA

LSAO (peak value)
gain reduction if not activated HFC = HIGH;

60 80 − dB
MUTT = HIGH;
MUTR = HIGH;
AUXC = HIGH

attack time when V

HFRX

jumps from

−− 5ms

20 mV to 20 mV + 10 dB
when V

V

BB(th)

release time when V

jumps below

BB

jumps from

HFRX

− 1 − ms

− 100 − ms

20 mV + 10 dB to 20 mV

V

= 20 mV + 10 dB

HFRX

t>t

att

− 0.1 2 %

VBB limiter threshold − 2.7 − V

threshold voltage required on pin

−0.4 − +0.2 V
DLC to obtain mute receive
condition

threshold current sourced by pin

V

= 0.2 V − 100 −µA

DLC

DLC in mute receive condition
voltage gain reduction in mute

V

= 0.2 V 60 80 − dB

DLC

receive condition

voltage gain from pin HFRX to

V

= 0.25 V (RMS) 1.2 3.7 6.2 dB

HFRX

AUXO
gain variation with frequency

f = 300 to 3400 Hz −±0.1 − dB

referenced to 1 kHz
gain variation with temperature

T

= −25 to +75 °C −±0.4 − dB

amb

referenced to 25 °C
maximum input voltage at pin

HFRX (RMS value)
noise output voltage at pin AUXO;

pin HFRX is an open-circuit

I

= 70 mA; for 2% THD

line

in the input stage
psophometrically

weighted (p53 curve)

− 580 − mV

−−100 − dBVp

(RMS value)
gain reduction if not activated HFC = LOW;

60 80 − dB
MUTT = LOW;
MUTR = HIGH;
AUXC = LOW

1999 Apr 08 29

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)

Preamplifiers

G

v(TSEN)

G

v(RSEN)

Logarithmic compressor and sensitivity adjustment

∆V

det(TSEN)

∆V

det(RSEN)

Signal envelope detectors

I

source(ENV)

I

sink(ENV)

∆V

ENV

Noise envelope detectors

I

source(NOI)

I

sink(NOI)

∆V

NOI

DIAL TONE DETECTOR
V

HFRX(th)(rms)

TX LEVEL LIMITER
V

TXIN(th)(rms)

voltage gain from pin TXIN to
TSEN

voltage gain from pin HFRX to
RSEN

sensitivity detection on pin TSEN;
voltage change on pin TENV
when doubling the current from
TSEN

sensitivity detection on pin RSEN;
voltage change on pin RENV
when doubling the current from
RSEN

maximum current sourced from
pin TENV or RENV

maximum current sunk by pin
TENV or RENV

voltage difference between pins
RENV and TENV

maximum current sourced from
pin TNOI or RNOI

maximum current sunk by pin
TNOI or RNOI

voltage difference between pins
RNOI and TNOI

threshold level at pin HFRX
(RMS value)

threshold level at pin TXIN
(RMS value)

− 40 − dB

− 0 − dB

I

= 0.8 to 160 µA − 18 − mV

TSEN

I

= 0.8 to 160 µA − 18 − mV

RSEN

− 120 −µA

−1.25 −1 −0.75 µA

when 10 µA is sourced

−±3 − mV

from both RSEN and
TSEN; signal detectors
tracking; note 2

0.75 1 1.25 µA

dial tone detector or TX

−−120 −µA

level limiter not activated
when 5 µA is sourced

−±3 − mV
from both RSEN and
TSEN; noise detectors
tracking; note 2

R

=10kΩ−25 − mV

RSEN

R

=10kΩ−0.75 − mV

TSEN

1999 Apr 08 30

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ECISION LOGIC (PINS IDT AND SWT)

D

Signal recognition

∆V

Srx(th)

∆V

Stx(th)

Switch-over

I

source(SWT)

I

sink(SWT)

I

idle(SWT)

VOICE SWITCH (PINS STAB AND SWR)
SWRA switching range − 40 − dB

∆SWRA switching range adjustment with R

|∆G

| voltage gain variation from

v

G

trx

threshold voltage between pins
RENV and RNOI to switch-over
from receive to Idle mode

threshold voltage between pins
TENV and TNOI to switch-over
from transmit to Idle mode

current sourced from pin SWT
when switching to receive mode

current sunk by pin SWT when
switching to transmit mode

current sourced from pin SWT in
Idle mode

transmit or receive mode to Idle
mode

gain tracking (G

vtx+Gvrx

) during
switching, referenced to Idle
mode

V

HFRX<VHFRX(th)

V

TXIN<VTXIN(th)

referenced to

SWR

365 kΩ

; note 3 − 13 − mV

; note 3 − 13 − mV

7.5 10.0 12.5 µA

−12.5 −10.0 −7.5 µA

− 0 −µA

−40 − +12 dB

− 20 − dB

− 0.5 − dB

Notes

1. When the channel is enabled according to Table 2.

2. Corresponds to ±1 dB tracking.

3. Corresponds to 4.3 dB noise/speech recognition level.

1999 Apr 08 31

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1999 Apr 08 32

handbook, full pagewidth

external supply

or

current supply

Z

exch

600 Ω

C

exch

100 µF

i = 15 mA
J_line

Vd = 10 V

V

HFTX

Z

imp

620 Ω

D

C

z

emc

10 nF

C

imp

100 µF

R

30.1 kΩ

C

V

C

RAUX

R
10 kΩ

C
100 nF

100 nF

TXAUX

100 nF

TSEN

TSEN

V

TXIN

V

DTMF

V

TXAUX

V

GATX

TXIN

MIC+

C

MICS

4.7 µF

C

HFTX

100 nF

C

DTMF

100 nF

C

RAUX

100 nF

C

TENV

470 nF

V

IR

C

IR

100 nF

R

MIC

200 Ω

TXOUT

DTMF

TXAUX

RAUX

MICS

MIC+

MIC−

HFTX

GATX

TXIN

TSEN
TENV

TNOI

C

4.7 µF

R

SLPE

C

20 Ω

SLPE

14 16 18 15 9 10 19

IR

17

20
31

30

36

26

REG

4.7 µF

REG AGC LN ESI

D

ESI

TEA1099H

27

28

32

43

42

4
3
2

13 29 2221 23 8 24

GND

TNOI

GNDTX SWRSTAB VOL DLC

R

STAB

3.65
kΩ

R
365

kΩ

SWR

R

VOL

0 to

22 kΩ

C

VBB

470 µF

V

BB

C
470 nF

DLC

C

47 µF

V

DD

SWT

C
220 nF

VDD

38
37
39
40
41
33

34

35

11

12

25

SWT

1

6

7

5

PD
HFC
MUTT
MUTR
AUXC

QR

GARX

RECO

HFRX

GALS

LSAO

RSEN

RENV

RNOI

IDT

R

100 kΩ

R

IDT

2.2 MΩ

C
100 pF

e1

C

100 nF

GAR

HFRX

C

RXE

100 nF

R

GALS

255 kΩ

C

RNOI

4.7 µF

C
1 nF

R
100 kΩ

GARS

V

HFRX

e2

R

RSEN

10 kΩ

C

RENV

470 nF

R

QR

150 Ω

C

qr

4.7 µF

C

C
100 nF

C

GALS

150 pF

LSAO

220 µF

R

LSAO

50 Ω

RSEN

FCA021

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

inputs/outputs and analog multiplexer

TEA1099H

Fig.15 Test circuit.

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

APPLICATION INFORMATION

handbook, full pagewidth

D2 D3

microphone

A

B

handsfree

microphone

D1 D4

D
V

10 V

handset

R

bal2

820 Ω

R

imp

imp

C

22 nF

C

22 nF

C

22 nF

MICB

R

C

tx2

tx1

TSEN

10 kΩ

TSEN
100

nF

130 Ω

R

3.92 kΩ

R

130 kΩ

C

100 nF

C

TXAUX

100 nF

bal1

ast2

ast1

R

tx2

15 kΩ

R

tx1

15 kΩ

TXIN

C

100 nF

R

GATX

30.1 kΩ

C

C

C

TENV

470

nF

8.2 kΩ

HFTX

DTMF

100 nF

RAUX

100 nF

Z

620 Ω

z

C

emc

d

10 nF

C
22 µF

MICS

R

MICP
1 kΩ

C

MICH

33 nF

R

MICM

1 kΩ

from MICS

R

BMICS
2 kΩ

R

tx3

C

IR

100 nF

C

MICS

4.7 µF

TXOUT

TXAUX

C

C

bal

220 nF

R

R

ast3

392 Ω

MICS

MIC+

MIC−

HFTX

GATX

TXIN

DTMF

RAUX

TSEN
TENV

TNOI

TNOI

4.7
µF

SLPE REG AGC LN ESI

14 16 18 15 9 10 19

IR

17

20

31

30

36
26

27

28

32

43

42

4
3
2

13 29 21 22 23 8 24

GND

external

SLPE

20 Ω

C

REG

4.7 µF

supply

C

D

ESI

VBB

470 µF

V

BB

TEA1099H

GNDTX STAB SWR VOL DLC SWT

R

STAB

3.65
kΩ

R

SWR
365

kΩ

R

VOL

0 to

22 kΩ

C

DLC

470

nF

C

47 µF

V

C

VDD

DD

220

38
37
41
39
40

44

33

34

35

1

11

12

6
7
5

25

SWT

nF

PD
HFC
AUXC
MUTT
MUTR

AUXO

QR

GARX

RECO

HFRX

GALS

LSAO

RSEN
RENV
RNOI
IDT

TEA1099H

from

controller

C

AUXO

100 nF

GAR

R

e1

100 kΩ

C

RXE

100 nF
C

HFRX

100 nF

C

GALS

150 pF

C

RENV

470

nF

R

e2

100 kΩ

R

GALS

255 kΩ

R

IDT

2.2 MΩ

C

RNOI

4.7
µF

C
100 pF

10 µF

R

RSEN

10 kΩ

C

MGM306

C

QR

C

C
220 µF

RSEN
100

nF

GARS
1 nF

LSAO

Fig.16 Basic application diagram.

1999 Apr 08 33

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

PACKAGE OUTLINE

QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm

c

y

X

A

33 23

34

22

Z

E

TEA1099H

SOT307-2

e

w M

b

p

pin 1 index

44

1

w M

b

0.25

p

D

H

0.40

0.20

D

D

0.25

10.1

0.14

9.9

e

DIMENSIONS (mm are the original dimensions)

mm

A

max.

2.10

0.25

0.05

1.85

1.65

UNIT A1A2A3bpcE

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

12

11

Z

D

B

v M

0 2.5 5 mm

scale

(1)

(1) (1)(1)

eH

H

10.1

9.9

12.9

0.8 1.3

12.3

v M

D

H

E

A

B

E

12.9

12.3

E

LL

0.95

0.55

A

p

A

2

A

1

detail X

Z

D

0.15 0.10.15

1.2

0.8

(A )

3

L

p

L

Zywv θ

E

1.2

0.8

θ

o

10

o

0

OUTLINE
VERSION

SOT307-2

IEC JEDEC EIAJ

REFERENCES

1999 Apr 08 34

EUROPEAN

PROJECTION

ISSUE DATE

95-02-04
97-08-01

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

SOLDERING
Introduction to soldering surface mount packages

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“Data Handbook IC26; Integrated Circuit Packages”

(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface

mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.

Reflow soldering

Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.

Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.

Wave soldering

Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.

To overcome these problems the double-wave soldering
method was specifically developed.

TEA1099H

If wave soldering is used the following conditions must be
observed for optimal results:

• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.

• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint

longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;

– smaller than 1.27 mm, the footprint longitudinal axis

must be parallel to the transport direction of the
printed-circuit board.

The footprint must incorporate solder thieves at the
downstream end.

• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

Manual soldering

Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.

When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.

1999 Apr 08 35

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary

TEA1099H

inputs/outputs and analog multiplexer

Suitability of surface mount IC packages for wave and reflow soldering methods

PACKAGE

BGA, SQFP not suitable suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable

(3)

PLCC
LQFP, QFP, TQFP not recommended
SSOP, TSSOP, VSO not recommended

Notes

1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum

2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink

3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.

4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;

5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is

, SO, SOJ suitable suitable

temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the

(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).

The package footprint must incorporate solder thieves downstream and at the side corners.

it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.

definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.

“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”

WAVE REFLOW

(2)

(3)(4)
(5)

SOLDERING METHOD

(1)

suitable

suitable
suitable

.

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1999 Apr 08 36

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

NOTES

TEA1099H

1999 Apr 08 37

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

NOTES

TEA1099H

1999 Apr 08 38

Philips Semiconductors Product specification

Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer

NOTES

TEA1099H

1999 Apr 08 39

Philips Semiconductors – a worldwide company

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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

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For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1999 SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 465002/750/03/pp40 Date of release: 1999 Apr 08 Document order number: 9397 750 04985