Datasheet TEA1095TS, TEA1095 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1095

Voice switched speakerphone IC

Product specification
Supersedes data of 1996 Mar 22
File under Integrated Circuits, IC03

1997 Nov 25

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

FEATURES

• External power supply with power-down function

• Transmit channel with:

– externally adjustable gain
– transmit mute function

• Receive channel with:
– externally adjustable gain
– logarithmic volume control via a linear potentiometer
– receive mute function

• Duplex controller consisting of:
– signal envelope and noise envelope monitors for both

channels with:
externally adjustable sensitivity
externally adjustable signal envelope time constant
externally adjustable noise envelope time constant

– decision logic with:

externally adjustable switch-over timing
externally adjustable idle mode timing
externally adjustable dial tone detector in receive

channel

– voice switch control with:

adjustable switching range
constant sum of gain during switching
constant sum of gain at different volume settings.

APPLICATIONS

• Mains, battery or line-powered telephone sets

• Cordless telephones

• Answering machines

• Fax machines

• Hands-free car kits.

GENERAL DESCRIPTION

The TEA1095 is a bipolar circuit, that in conjunction with a
member of the TEA106X, TEA111X families of
transmission or TEA1096 transmission/listening-in circuits
offers a hands-free function. It incorporates a transmit
amplifier, a receiver channel amplifier and a duplex
controller with signal and noise monitors on both channels.

ORDERING INFORMATION

TYPE

NUMBER

TEA1095 DIP24 plastic dual in-line package; 24 leads (600 mil) SOT101-1
TEA1095T SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
TEA1095TS SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1

1997 Nov 25 2

NAME DESCRIPTION VERSION

PACKAGE

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

QUICK REFERENCE DATA

VBB=5V; V
in test circuit of Fig.11; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

BB

I

BB

G

vtx

∆G

vtxr

G

vrx

∆G

vrxr

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

T

amb

= 0 V; f = 1 kHz; T

GND

=25°C; MUTETX = LOW ; MUTERX = LOW; PD = LOW; R

amb

=0Ω; measured

VOL

supply voltage 2.9 − 12.0 V
current consumption from pin V

BB

voltage gain from TXIN to TXOUT in
transmit mode

voltage gain adjustment with R

GATX

voltage gain from RXIN to RXOUT in
receive mode

voltage gain adjustment with R

GARX

V

= 1 mV (RMS);

TXIN

R

= 30.1 kΩ

GATX

V

= 20 mV (RMS);

RXIN

= 16.5 kΩ

R

GARX

SWR

R

= 365 kΩ

SWR

referenced to

− 2.7 3.8 mA

− 15.5 − dB

−15.5 − +24.5 dB

− 6.5 − dB

−20.5 − +19.5 dB

−40 − +12 dB

operating ambient temperature −25 − +75 °C

1997 Nov 25 3

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

BLOCK DIAGRAM

handbook, full pagewidth

C

TSEN

C

TENV

C

TNOI

C

RNOI

C

RENV

7

V

BB

13

PD

C

TXIN

MIC

R

TSEN

15 MUTETX

18

TXIN

24

TSEN

23

TENV

22

TNOI
RNOI

19

RENV

20

V I

LOG

BUFFER

BUFFER

BUFFER

BUFFER

ATTEN­UATOR

V

BB

R

TEA1095

TRANSMIT CHANNEL

DUPLEX CONTROLLER

13
mV

13 mV

LOGIC

I V

VOICE

SWITCH

GND

GATX

TXOUT

TXGND

IDT

V

ref

SWT

STAB

SWR

6

R

GATX

17

16

to transmission

R

R

STAB

R

SWR

IDT

circuit

C

SWT

14

12

11

10

9

R

C

RSEN

R

to loudspeaker
amplifier

RSEN

GARX

21

4

5

1

RSEN

GARX

RXOUT

MUTERX

LOG

V I

RECEIVE CHANNEL

V

dt

Fig.1 Block diagram.

1997 Nov 25 4

2

I V

VOLUME

CONTROL

RXIN

VOL 8

MBG350

2

R

VOL

from transmission
circuit

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

PINNING

SYMBOL PIN DESCRIPTION

MUTERX 1 receiver channel mute input
RXIN 2 receiver amplifier input
n.c. 3 not connected
GARX 4 receiver gain adjustment
RXOUT 5 receiver amplifier output
GND 6 ground reference
V

BB

7 supply voltage input
VOL 8 receiver volume adjustment
SWR 9 switching range adjustment
STAB 10 reference current adjustment
SWT 11 switch-over timing adjustment
IDT 12 idle mode timing adjustment
PD 13 power-down input
TXGND 14 ground reference for the transmit

channel
MUTETX 15 transmit channel mute input
TXOUT 16 transmit amplifier output
GATX 17 transmit gain adjustment
TXIN 18 transmit amplifier input
RNOI 19 receive noise envelope timing

adjustment
RENV 20 receive signal envelope timing

adjustment
RSEN 21 receive signal envelope sensitivity

adjustment
TNOI 22 transmit noise envelope timing

adjustment
TENV 23 transmit signal envelope timing

adjustment
TSEN 24 transmit signal envelope sensitivity

adjustment

handbook, halfpage

MUTERX

1
2

RXIN

3

n.c.

4

GARX

GND

5
6

RXOUT

TEA1095

7

V

BB

8

VOL

9

SWR

10

STAB

11

SWT

12

IDT

MBG349

Fig.2 Pin configuration.

24
23
22
21
20
19
18
17
16
15
14
13

TSEN
TENV
TNOI
RSEN
RENV
RNOI
TXIN
GATX
TXOUT
MUTETX
TXGND
PD

1997 Nov 25 5

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

FUNCTIONAL DESCRIPTION

The values given in the functional description are typical
values except when otherwise specified.

A principle diagram of the TEA1096 is shown on the left
side of Fig.3. The TEA1096 is a transmission and
listening-in circuit. It incorporates a receiving amplifier for
the earpiece, a transmit amplifier for the microphone, a
loudspeaker amplifier and a hybrid. For more details on the
TEA1096 circuit (please refer to

Data Handbook IC03

).
The right side of Fig.3 shows a principle diagram of the
TEA1095, a hands-free add-on circuit with a transmit
amplifier, a receiver amplifier and a duplex controller.

As can be seen from Fig.3, a loop is formed via the
sidetone network in the transmission circuit and the
acoustic coupling between loudspeaker and microphone
of the hands-free circuit. When this loop gain is greater
than 1, howling is introduced. In a full duplex application,
this would be the case. The loop-gain has to be much

lower than 1 and therefore has to be decreased to avoid
howling. This is achieved by the duplex controller. The
duplex controller of the TEA1095 detects which channel
has the ‘largest’ signal and then controls the gains of the
transmit amplifier and the receiver amplifier such that the
sum of the gains remains constant. As a result, the circuit
can be in three stable modes:

1. Transmit mode (Tx mode): the gain of the transmit
amplifier is at its maximum and the gain of the receiver
amplifier is at its minimum.

2. Receive mode (Rx mode): the gain of the receiver
amplifier is at its maximum and the gain of the transmit
amplifier is at its minimum.

3. Idle mode: the gain of the amplifiers is halfway
between their maximum and minimum value.

The difference between the maximum gain and minimum
gain is called the switching range.

handbook, full pagewidth

acoustic
coupling

telephone

line

HYBRID

sidetone

TEA1096 TEA1095

DUPLEX

CONTROL

Fig.3 Hands-free telephone set principles.

MBG358

1997 Nov 25 6

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

Supply: pins VBB, GND and PD

The TEA1095 must be supplied with an external stabilized
voltage source between pins V

and GND. In idle mode,

BB

without any signal, the internal supply current is 2.7 mA at
VBB=5V.

To reduce current consumption during pulse dialling or
register recall (flash), the TEA1095 is provided with a
power-down (PD) input. When the voltage on PD is HIGH,
the current consumption from VBB is 140 µA.

Transmit channel: pins TXIN, GATX, TXOUT, TXGND
and MUTETX

The TEA1095 has an asymmetrical transmit input (TXIN)
with an input resistance of 20 kΩ. The gain of the input
stage varies according to the mode of the TEA1095. In the
transmit mode, the gain is at its maximum; in the receive

handbook, full pagewidth

MUTETX

V

BB

mode, it is at its minimum and in the idle mode, it is halfway
between maximum and minimum. Switch-over from one
mode to the other is smooth and click-free. The output
capability at pin TXOUT is 20 µA (RMS).

In the transmit mode, the overall gain of the transmit
amplifier (from pin TXIN to TXOUT) can be adjusted from
0 dB to 40 dB to suit application specific requirements.
The gain is proportional to the value of R

15.5 dB with R

GATX

= 30.1 kΩ.

A capacitor must be connected in parallel with R

and equals

GATX

GATX

to
ensure stability of the transmit amplifier. Together with
R

, it also provides a first-order low-pass filter.

GATX

By applying a HIGH level on pin MUTETX, the transmit
amplifier is muted and the TEA1095 is automatically
forced into the receive mode.

R

GATX

GATX

C

GATX

C

TXIN

R

MIC

TXIN

to

envelope

detector

V I I V

from

voice

switch

to

logic

TXOUT

TXGND

to transmission
circuit

MBG357

Fig.4 Transmit channel.

1997 Nov 25 7

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

Receive channel

handbook, full pagewidth

R

to loudspeaker
amplifier

GARX

C

GARX

GARX

RXOUT

MUTERX

V I

Fig.5 Receive channel.

RECEIVER AMPLIFIER: PINS RXIN, GARX, RXOUT AND
MUTERX

The TEA1095 has an asymmetrical input (RXIN) for the
receiver amplifier with an input resistance of 20 kΩ. The
gain of the input stage varies according to the mode of the
TEA1095. In the receive mode, the gain is at its maximum;
in the transmit mode, it is at its minimum and in the idle
mode, it is halfway between maximum and minimum.
Switch-over from one mode to the other is smooth and
click-free.

In the receive mode, the overall gain of the receive
amplifier can be adjusted from −14 dB to +26 dB to suit
application specific requirements. The gain from RXIN to
RXOUT is proportional to the value of R

6.5 dB with R
parallel with R

= 16.5 kΩ. A capacitor connected in

GARX

can be used to provide a first-order

GARX

and equals

GARX

low-pass filter.
By applying a HIGH level on pin MUTERX, the receiver

amplifier is muted and the TEA1095 is automatically
forced into the transmit mode.

I V

to

envelope

detector

RXIN

VOL

from transmission
circuit

R

VOL

MBG356

to/from

voice switch

VOLUME

CONTROL

OLUME CONTROL: PIN VOL

V
The receiver amplifier gain can be adjusted with the

potentiometer R

. A linear potentiometer can be used to

VOL

obtain logarithmic control of the gain of the receiver
amplifier. Each 950 Ω increase of R

results in a gain

VOL

loss of 3 dB. The maximum gain reduction with the volume
control is internally limited to the switching range.

Duplex controller

IGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN,

S
TENV, TNOI, RSEN, RENV

AND RNOI

The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelopes detectors are shown in
Fig.6.

For the transmit channel, the input signal at TXIN is 40 dB
amplified to TSEN. For the receive channel, the input
signal at RXIN is 0 dB amplified to RSEN. The signals from
TSEN and RSEN are logarithmically compressed and
buffered to TENV and RENV respectively. The sensitivity
of the envelope detectors is set with R

TSEN

and R

RSEN

.

1997 Nov 25 8

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

The capacitors connected in series with the two resistors
block any DC component and form a first order high-pass
filter. In the basic application (see Fig.12), it is assumed
that V
nominal and both R
With the value of C

= 1 mV (RMS) and V

TXIN

TSEN
TSEN

and R
and C

= 100 mV (RMS)

RXIN

have a value of 10 kΩ.

RSEN

at 100 nF, the cut-off

RSEN

frequency is at 160 Hz.
The buffer amplifiers leading the compressed signals to

TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Together with
the capacitors C

TENV

and C

, the timing of the signal

RENV

envelope monitors can be set. In the basic application, the
value of both capacitors is 470 nF. Because of the
logarithmic compression, each 6 dB signal increase
means 18 mV increase of the voltage on the envelopes
TENV or RENV at room temperature. Thus, timings can be
expressed in dB/ms. At room temperature, the 120 µA
sourced current corresponds to a maximum rise-slope of
the signal envelope of 85 dB/ms. This is enough to track
normal speech signals. The 1 µA current sunk by TENV or

RENV corresponds to a maximum fall-slope of 0.7 dB/ms.
This is enough for a smooth envelope and also eliminates
the effect of echoes on switching behaviour.

To determine the noise level, the signal on TENV and
RENV are buffered to TNOI and RNOI. These buffers have
a maximum source current of 1 µA and a maximum sink
current of 120 µA. Together with the capacitors C
C

, the timing can be set. In the basic application of

RNOI

TNOI

and

Fig.12, the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms. This is small enough to track
background noise and not to be influenced by speech
bursts. The 120 µA current that is sunk corresponds to a
maximum fall-slope of approximately 8.5 dB/ms. However,
during the decrease of the signal envelope, the noise
envelope tracks the signal envelope so it will never fall
faster than approximately 0.7 dB/ms. The behaviour of the
signal envelope and noise envelope monitors is illustrated
in Fig.7.

handbook, full pagewidth

DUPLEX CONTROLLER

from
transmit
amplifier

LOG LOG

from
receiver
amplifier

TSEN

R

TENV TNOI RSEN RENV RNOI

TSEN

C

TSEN

C

TENV

C

TNOI

Fig.6 Signal and noise envelope detectors.

R

RSEN

C

RSEN

C

RENV

to logicto logic

C

RNOI

MBG355

1997 Nov 25 9

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

handbook, full pagewidth

INPUT SIGNAL

SIGNAL ENVELOPE

A: 85 dB/ms
B: 0.7 dB/ms

NOISE ENVELOPE

B: 0.7 dB/ms
C: 0.07 dB/ms

handbook, full pagewidth

4 mV (RMS)

1 mV (RMS)

A

C

36 mV

36 mV

B

B

Fig.7 Signal and noise envelope waveforms.

DUPLEX CONTROLLER

MBG354

A

C

V

ref

B

B

time

IDT

TENV
TNOI

ATTEN­UATOR

RENV
RNOI

MUTETX

(1) When MUTETX = HIGH +10 µA is forced. When MUTERX = HIGH −10 µA is forced.

13 mV

13 mV

V

dt

LOGIC

xx11− 10 µA
x10x

1x0x
xx10 0
000x 0

(note 1)

Fig.8 Decision logic.

+ 10 µA
+ 10 µA

SWT

R

MBG353

C

IDT

SWT

1997 Nov 25 10

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

DECISION LOGIC: PINS IDT AND SWT
The TEA1095 selects its mode of operation (transmit,

receive or idle mode) by comparing the signal and the
noise envelopes of both channels. This is executed by the
decision logic. The resulting voltage on pin SWT is the
input for the voice-switch.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
V

ENV−NOI

= 13 mV. This so called speech/noise threshold

is implemented in both channels.
The signal on TXIN contains both speech and the signal

coming from the loudspeaker (acoustic coupling). When
receiving, the contribution from the loudspeaker overrules
the speech. As a result, the signal envelope on TENV is
formed mainly by the loudspeaker signal. To correct this,
an attenuator is connected between TENV and the
TENV/RENV comparator. Its attenuation equals that
applied to the transmit amplifier.

When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1095 to go into the idle mode and the user of the set
would hear the dial tone fade away. To prevent this, a dial
tone detector is incorporated which, in standard
application, does not consider the input signals at RXIN as
noise when they have a level greater than 42 mV (RMS).
This level is proportional to R

RSEN

.

As can be seen from Fig.8, the output of the decision logic
is a current source. The logic table gives the relationship
between the inputs and the value of the current source. It
can charge or discharge the capacitor C

with a current

SWT

of 10 µA (switch-over). If the current is zero, the voltage on
SWT becomes equal to the voltage on IDT via the high
ohmic resistor R

(idling). The resulting voltage

IDT

difference between SWT and IDT determines the mode of
the TEA1095 and can vary between −400 mV and
+400 mV.

Table 1 Modes of TEA1095

V

− V

SWT

(mV) MODE

IDT

<−180 transmit mode
0 idle mode
>180 receive mode

The switch-over timing can be set with C
timing with C
Fig.12, C

and R

SWT

is chosen at 220 nF and R

SWT

. In the basic application given in

IDT

, the idle mode

SWT

at 2.2 MΩ.

IDT

This enables a switch-over time from transmit to receive
mode or vice-versa of approximately 13 ms (580 mV
swing on SWT). The switch-over time from idle mode to
transmit mode or receive mode is approximately 4 ms
(180 mV swing on SWT).

The switch-over time from receive mode or transmit mode
to idle mode is equal to 4 × R

IDT CSWT

and is

approximately 2 s (idle mode time).
The inputs MUTETX and MUTERX overrule the decision

logic. When MUTETX goes HIGH, the capacitor C

SWT

is
charged with 10 µA resulting in the receive mode. When
the voltage on pin MUTERX goes HIGH, the capacitor
C

is discharged with 10 µA resulting in the transmit

SWT

mode.

V

OICE-SWITCH: PINS STAB AND SWR

A diagram of the voice-switch is illustrated in Fig.9. With
the voltage on SWT, the TEA1095 voice-switch regulates
the gains of the transmit and the receive channel such that
the sum of both is kept constant.

In the transmit mode, the gain of the transmit amplifier is at
its maximum and the gain of the receive amplifier is at its
minimum. In the receive mode, the opposite applies. In the
idle mode, both transmit and receive amplifier gains are
halfway.

The difference between maximum and minimum is the so
called switching range. This range is determined by the
ratio of R
0 and 52 dB. R

SWR

and R

STAB

and is adjustable between

STAB

should be equal to 3.65 kΩ and sets
an internally used reference current. In the basic
application diagram given in Fig.12, R

is equal to

SWR

365 kΩ which results in a switching range of 40 dB. The
switch-over behaviour is illustrated in Fig.10.

In the receive mode, the gain of the receive amplifier can
be reduced using the volume control. Since the
voice-switch keeps the sum of the gains constant, the gain
of the transmit amplifier is increased at the same time (see
dashed curves in Fig.10). In the transmit mode however,
the volume control has no influence on the gain of the
transmit amplifier or the gain of the receive amplifier.
Consequently, the switching range is reduced when the
volume is reduced. At maximum reduction of volume, the
switching range becomes 0 dB.

1997 Nov 25 11

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

handbook, full pagewidth

Where C = constant.

DUPLEX CONTROLLER

to

transmit

amplifier

G

vtx

VOICE SWITCH

from

volume

control

Fig.9 Voice switch.

+ G

vrx =

to

receive

amplifier

from

SWT

C

STAB

SWR

MBG352

R

R

STAB

SWR

handbook, halfpage

G

G

vrx

vtx,

(10 dB/div)

−400 −200 0 +400+200

Tx mode Rx mode

G

vtx

G

vrx

idle
mode

Fig.10 Switch-over behaviour.

1997 Nov 25 12

V

SWT −

MBG351

V

IDT

(mV)

R

VOL

(Ω)

5700
3800
1900
0

0
1900
3800

5700

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n(max)

V

RIN(max)

V

BB(max)

T

stg

T

amb

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

maximum voltage on all pins;

V

− 0.4 VBB+ 0.4 V

GND

except pins VBB and RXIN
maximum voltage on pin RXIN V
maximum voltage on pin V

BB

− 1.2 VBB+ 0.4 V

GND

V

− 0.4 12.0 V

GND

IC storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C

thermal resistance from junction to ambient in free air

TEA1095 50 K/W
TEA1095T 75 K/W
TEA1095TS 104 K/W

CHARACTERISTICS

V

=5V; V

BB

= 0 V; f = 1 kHz; T

GND

=25°C; MUTETX = LOW; MUTERX = LOW; PD = LOW; R

amb

=0Ω; measured

VOL

in test circuit of Fig.11; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (V

V

BB

I

BB

, PD and GND)

BB

supply voltage 2.9 − 12.0 V
current consumption from pin V

BB

− 2.7 3.8 mA
POWER-DOWN INPUT PD
V

IL

V

IH

I

PD

I

BB(PD)

LOW level input voltage V

− 0.4 − 0.3 V

GND

HIGH level input voltage 1.5 − VBB+ 0.4 V
power-down input current PD = HIGH − 2.5 5 µA
current consumption from pin V

PD = HIGH − 140 190 µA

BB

in power-down mode

Transmit channel (TXIN, GATX, TXOUT, MUTETX and TXGND)

RANSMIT AMPLIFIER

T
Zi input impedance between

17 20 23 kΩ

pins TXIN and TXGND

G

∆G

∆G

vtx

vtxr

vtxT

voltage gain from TXIN to TXOUT
in transmit mode

voltage gain adjustment with
R

GATX

voltage gain variation with
temperature referenced to 25 °C

V

= 1 mV (RMS);

TXIN

R

= 30.1 kΩ

GATX

V

= 1 mV (RMS);

TXIN

T

= −25 to +75 °C

amb

− 15.5 − dB

−15.5 − +24.5 dB

−±0.3 − dB

1997 Nov 25 13

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

vtxf

V

notx

TRANSMIT MUTE INPUT MUTETX
V

IL

V

IH

I

MUTETX

∆G

vtxm

Receive channel (RXIN, GARX, RXOUT and MUTERX)

voltage gain variation with
frequency referenced to 1 kHz

noise output voltage at
pin TXOUT

V

= 1 mV (RMS);

TXIN

f = 300 to 3400 Hz
pin TXIN connected to

TXGND through 200 Ω in

−±0.3 − dB

−−100 − dBmp

series with 10 µF;
psophometrically
weighted (P53 curve)

LOW level input voltage V

− 0.4 − 0.3 V

GND

HIGH level input voltage 1.5 − VBB+ 0.4 V
input current MUTETX = HIGH − 2.5 5 µA
voltage gain reduction with

MUTETX = HIGH − 80 − dB

MUTETX active

R

ECEIVE AMPLIFIER

Zi input impedance between pins

RXIN and GND

G

vrx

voltage gain from RXIN to
RXOUT in receive mode

∆G

∆G

vrxr

vrxT

voltage gain adjustment with
R

GARX

voltage gain variation with
temperature referenced to 25 °C

∆G

vrxf

voltage gain variation with
frequency referenced to 1 kHz

V

norx(rms)

noise output voltage at pin
RXOUT (RMS value)

∆G

vrxv

voltage gain variation referenced
to ∆R

VOL

= 950 Ω

RECEIVE MUTE INPUT MUTERX
V

IL

V

IH

I

MUTERX

LOW level input voltage V
HIGH level input voltage 1.5 − VBB+ 0.4 V
input current MUTERX = HIGH − 2.5 5 µA

V

= 20 mV (RMS);

RXIN

R

= 16.5 kΩ

GARX

V

= 20 mV (RMS);

RXIN

T

= −25 to +75 °C

amb

V

= 20 mV (RMS);

RXIN

fi= 300 to 3400 Hz
input RXIN short-circuited

through 200 Ω in series
with 10 µF;
psophometrically
weighted (P53 curve)

when total attenuation
does not exceed the
switching range

17 20 23 kΩ

− 6.5 − dB

−20.5 − +19.5 dB

−±0.3 − dB

−±0.3 − dB

− 20 −µV

− 3 − dB

− 0.4 − 0.3 V

GND

1997 Nov 25 14

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

vrxm

Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI)

P

REAMPLIFIERS

G

v(TSEN)

G

v(RSEN)

LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT

ϕ

det(TSEN)

ϕ

det(RSEN)

SIGNAL ENVELOPE DETECTORS
I

source(ENV)

I

sink(ENV)

∆V

ENV

NOISE ENVELOPE DETECTORS
I

source(NOI)

I

sink(NOI)

∆V

NOI

DIAL TONE DETECTOR
V

RINDT(rms)

gain reduction with MUTERX

MUTERX = HIGH − 80 − dB

active

voltage gain from TXIN to TSEN − 40 − dB
voltage gain between RXIN to

− 0 − dB

RSEN

sensitivity detection on pin TSEN;

I

= 0.8 to 160 µA − 18 − mV

TSEN

voltage change on pin TENV
when doubling the current from
TSEN

sensitivity detection on pin RSEN;

I

= 0.8 to 160 µA − 18 − mV

RSEN

voltage change on pin RENV
when doubling the current from
RSEN

maximum current sourced from

− 120 −µA

pin TENV or RENV
maximum current sunk by

0.75 1 1.25 µA

pin TENV or RENV
voltage difference between

pins RENV and TENV

when 10 µA is sourced
from both RSEN and

−±3−mV

TSEN; envelope detectors
tracking; note 1

maximum current sourced from

0.75 1 1.25 µA

pins TNOI or RNOI
maximum current sunk by

− 120 −µA

pins TNOI or RNOI
voltage difference between

pins RNOI and TNOI

when 2 µA is sourced
from both RSEN and

−±3−mV

TSEN; noise detectors
tracking; note 1

threshold level at pin RXIN

− 42 − mV

(RMS value)

1997 Nov 25 15

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SYMBOL P ARAMETER CONDITIONS MIN. TYP . MAX. UNIT

Decision logic (IDT and SWT)

S

IGNAL RECOGNITION

∆V

Srx(th)

∆V

Stx(th)

WITCH-OVER

S
I

source(SWT)

I

sink(SWT)

I

idle(SWT)

threshold voltage between
pins RENV and RNOI to
switch-over from receive to idle
mode

threshold voltage between
pins TENV and TNOI to
switch-over from transmit to idle
mode

current sourced from pin SWT
when switching to receive mode

current sunk by pin SWT when
switching to transmit mode

current sourced from pin SWT in
idle mode

V

RXIN

< V

; note 2 − 13 − mV

RINDT

note 2 − 13 − mV

7.5 10 12.5 µA

7.5 10 12.5 µA

− 0 −µA

Voice switch (STAB and SWR)

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

R

SWR

∆G

 voltage gain variation from

v

referenced to

SWR

= 365 kΩ

−40 − +12 dB

− 20 − dB

transmit mode to idle mode on
both channels

G

tr

gain tracking (G

vtx+Gvrx

) during

−±0.5 − dB

switching, referenced to idle mode

Notes

1. Corresponds to ±1 dB tracking.

2. Corresponds to 4.3 dB noise/speech recognition level.

1997 Nov 25 16

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

TEST AND APPLICATION INFORMATION

C

C

220 nF

SWT

C

TNOI

C

TENV

TSEN

C

MBG359

4.7 µF

470 nF

100 nF

handbook, full pagewidth

Fig.11 Test circuit.

GARX

R

VBB

C

SWR

SWT STAB

IDT

5.0 V

BB

V

kΩ

16.5

GARX

4

GARX

RXOUT

5

TSEN

R

R

10 kΩ

VOL

TXIN

C

220 nF

PD

7

TXIN

13

18

TEA1095

10 µF

SWR

R

STAB

3.65 kΩ 365 kΩ

R

IDT

2.2 MΩ

R

MUTETX

15 12 11 10 9

RXIN

C

2

RXIN

16

TXOUT

R

GATX

C

GATX

30.1 kΩ

17

GATX

1997 Nov 25 17

220 nF

14

TXGND

6

GND

RNOI

4.7 µF

C

RENV

C

470 nF

RSEN

RSEN

C

10 kΩ

R

RSEN RENV RNOI TSEN TENV TNOI MUTERX VOL

21 20 19 24 23 22 1 8

100 nF

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SWR

R

STAB

R

SWT

C

220 nF

from

microcontroller

LSP

TNOI

C

TENV

C

TSEN

C

RNOI

C

RENV

C

RSEN

4.7 µF

470 nF

100 nF

4.7 µF

470 nF

100 nF

MBG360

handbook, full pagewidth

Fig.12 Basic application diagram.

7

GATX

R

GATX

C

n.c.

+5 V

3

GATX

30.1 kΩ

VBB

C

GARX

4

17

10 µF

GARX

16.5 kΩ

R

C

14

TXGND

GARX

100 nF

RXOUT

6

GND

5

RXOUT

C

21 20 19 24 23 22 8

LSP

C

AMPLIFIER

LOUDSPEAKER

VOL

R

TSEN

R

10 kΩ

RSEN

R

10 kΩ

RSEN RENV RNOI TSEN TENV TNOI VOL

C

VBB

18

2

2.2 kΩ

100 nF

100 nF

V

BB

V

16

TXOUT

TXIN

R

TXIN

C

TXIN

365 kΩ

3.65 kΩ

IDT

R

2.2 MΩ
12 11 10 9

15 1

PD MUTETX MUTERX IDT SWT SWRSTAB

13

RXIN

RXIN

C

C7

100 nF

QR +

LN

CC

620 Ω

R1

V

MIC −

TEA106X TEA1095

C1

100 µF

line

1997 Nov 25 18

C8

100 nF

MIC +

SLPE

EE

V

20 Ω

R9

1997 Nov 25 19

ring

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

470 µF

R

SLPE

20 Ω

R

DD

390 Ω

S4 +
MUTET

S3

S2

S1

tip

DP

MICRO-

CONTROLLER

DTMF

C

VDD

100 µF

DTMF

SLPE

V

DD

TEA1096

V

EE

S1

LN

DLL/
DIL

C
470

nF

V

LSI

DLL

BB

R1

MICP

MICM

QRP

QLS

C

QLS

47 µF

HFQLS

C

VBB

C

C

C

10 µF

100 nF

MICP

100 nF

MICM

QRP

100 µF

C

HSMIC

R2

S3

HSMIC

R3

C1

R4

HSQRP

S2

S4

C

RXIN

100 nF

R5

MUTET

TXOUT

RXIN

TXGND

GND

from

microcontroller

MUTETX

15 1 13

16

MUTERX

TEA1095

2

14

6

18

PD

7

8

5

V

BB

TXIN

VOL

RXOUT

C

100

nF

TXIN

R6

100 nF
C

RXOUT

C

HFTXIN

100 µF

HFTXIN

R7

R

VOL

interrupter

SWITCH

MODE

MUTET

S1 S2 S3 S4

Hands-free OPEN OPEN TXOUT OPEN LOW

handbook, full pagewidth

Handset CLOSED CLOSED HSMIC OPEN DON’T CARE
Handset plus listening-in OPEN CLOSED HSMIC CLOSED HIGH

Fig.13 Application example.

MBG361

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

PACKAGE OUTLINES

DIP24: plastic dual in-line package; 24 leads (600 mil)

D

seating plane

L

Z

24

pin 1 index

e

b

SOT101-1

M

E

A

2

A

A

1

w M

b

1

13

E

c

(e )

1

M

H

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE
VERSION

SOT101-1

1 2

min.

max.

1.7

1.3

0.066

0.051

IEC JEDEC EIAJ

051G02 MO-015AD

b

b

1

0.53

0.38

0.021

0.015

0.013

0.009

REFERENCES

cD E e M

0.32

32.0

0.23

31.4

1.26

1.24

1997 Nov 25 20

12

14.1

13.7

0.56

0.54

(1)(1)

e

L

3.9

15.80

3.4

15.24

EUROPEAN

PROJECTION

M

0.62

0.60

E

17.15

15.90

0.68

0.63

1

0.15

0.13

H

w

0.252.54 15.24

0.010.10 0.60

ISSUE DATE

92-11-17
95-01-23

Z

max.

2.25.1 0.51 4.0

0.0870.20 0.020 0.16

(1)

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SO24: plastic small outline package; 24 leads; body width 7.5 mm

D

c

y

Z

24

pin 1 index

1

e

13

12

w M

b

p

SOT137-1

E

H

E

Q

A

2

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE

VERSION

SOT137-1

A

max.

2.65

0.10

A1A2A

0.30

2.45

0.10

2.25

0.012

0.096

0.004

0.089

IEC JEDEC EIAJ

075E05 MS-013AD

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

15.6

7.6

7.4

0.30

0.29

1.27

0.050

15.2

0.61

0.60

REFERENCES

1997 Nov 25 21

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

8

0.004

ISSUE DATE

0.035

0.016

95-01-24
97-05-22

0

o
o

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm

D

c

y

Z

24 13

A

2

A

pin 1 index

1

SOT340-1

E

H

E

Q

L

p

L

(A )

A

X

v M

A

A

3

θ

112

w M

b

e

DIMENSIONS (mm are the original dimensions)

UNIT A1A2A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

0.21

mm

2.0

OUTLINE

VERSION

SOT340-1 MO-150AG

0.05

1.80

1.65

IEC JEDEC EIAJ

0.25

b

3

p

0.38

0.25

p

cD

0.20

8.4

0.09

8.0

REFERENCES

0 2.5 5 mm

scale

(1)E(1) (1)

5.4

0.65 1.25

5.2

1997 Nov 25 22

detail X

eHELLpQZywv θ

7.9

7.6

1.03

0.63

0.9

0.7

EUROPEAN

PROJECTION

0.13 0.10.2

0.8

0.4

ISSUE DATE

93-09-08
95-02-04

o

8

o

0

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

SO and SSOP

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO and

SSOP packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating

1997 Nov 25 23

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Nov 25 24

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

NOTES

1997 Nov 25 25

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

NOTES

1997 Nov 25 26

Philips Semiconductors Product specification

Voice switched speakerphone IC TEA1095

NOTES

1997 Nov 25 27

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. [phone],

Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: seeSouth America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
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India: Philips INDIA Ltd, Band Box Building, 2nd floor,

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Tel. [phone], Fax. [phone]

Indonesia: see Singapore
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Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
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Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
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Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
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Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. [phone], Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1997 SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

Printed in The Netherlands 417027/1200/03/pp28 Date of release: 1997 Nov 25 Document order number: 9397 750 03122