Datasheet TEA1094T, TEA1094AT, TEA1094AM, TEA1094A, TEA1094 Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1094; TEA1094A

Hands free IC

Product specification
Supersedes data of 1996 Mar 11
File under Integrated Circuits, IC03

1996 Jul 15

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

FEATURES

• Low power consumption

• Power-down function (TEA1094A only)

• Microphone channel with:

– externally adjustable gain
– microphone mute function.

• Loudspeaker channel with:
– externally adjustable gain
– dynamic limiter to prevent distortion
– rail-to-rail output stage for single-ended load drive
– logarithmic volume control via linear potentiometer
– loudspeaker mute function.

• Duplex controller consisting of:
– signal envelope and noise envelope monitors for both

channels with:
externally adjustable sensitivity
externally adjustable signal envelope time constant
externally adjustable noise envelope time constant

– decision logic with:

externally adjustable switch-over timing
externally adjustable idle mode timing
externally adjustable dial tone detector in

receive channel

– voice switch control with:

adjustable switching range
constant sum of gain during switching
constant sum of gain at different volume settings.

APPLICATIONS

• Mains, battery or line-powered telephone sets with
hands-free/listening-in functions

• Cordless telephones

• Answering machines

• Fax machines.

GENERAL DESCRIPTION

The TEA1094 and TEA1094A are bipolar circuits intended
for use in mains, battery or line-powered telephone sets,
cordless telephones, answering machines and Fax
machines. In conjunction with a member of the TEA106X,
TEA111X families of transmission circuits, the devices
offer a hands-free function. They incorporate a
microphone amplifier, a loudspeaker amplifier and a
duplex controller with signal and noise monitors on
both channels.

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

TEA1094 DIP28 plastic dual in-line package; 28 leads (600 mil) SOT117-1
TEA1094A DIP24 plastic dual in-line package; 24 leads (600 mil) SOT101-1
TEA1094T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1
TEA1094AT SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
TEA1094AM SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1

1996 Jul 15 2

PACKAGE

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

QUICK REFERENCE DATA

VBB=5V; V
measured in test circuit of Fig.12; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

BB

I

BB

G

vtx

∆G

vtxr

G

vrx

∆G

vrxr

V

O(p-p)

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

T

amb

= 0 V; f = 1 kHz; T

GND

=25°C; MUTET = LOW; PD = LOW (TEA1094A only); RL=50Ω; R

amb

supply voltage 3.3 − 12.0 V
current consumption from pin V

BB

voltage gain from pin MIC to
pin MOUT in transmit mode

voltage gain adjustment with R

GAT

voltage gain in receive mode; the
difference between RIN1 and RIN2
to LSP

voltage gain adjustment with R

GAR

output voltage (peak-to-peak value) V

V

= 1 mV (RMS);

MIC

R

= 30.1 kΩ

GAT

V

= 20 mV (RMS);

RIN

= 66.5 kΩ;

R

GAR

RL=50Ω

= 150 mV (RMS);

RIN

R

= 374 kΩ;

GAR

− 3.1 4.4 mA
13 15.5 18 dB

−15.5 − +15.5 dB
16 18.5 21 dB

−18.5 − +14.5 dB

− 7.5 − V

RL=33Ω; VBB= 9.0 V;
note 1

−40 − +12 dB

referenced to R

SWR

SWR

= 365 kΩ

operating ambient temperature −25 − +75 °C

VOL

=0Ω;

Note

1. Corresponds to 200 mW output power.

1996 Jul 15 3

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

BLOCK DIAGRAM

handbook, full pagewidth

V

BB

C

R

MIC

R

C

R

C

MIC

TSEN

TSEN

C

TENV

C

TNOI

C

RNOI

C

RENV

RSEN

RSEN

10
(7)

(13)

19

(15)

22

(18)

28

(24)

27

(23)

26

(22)

23

(19)

24

(20)

25

(21)

V

BB

(1)

PD

MUTET

MIC

TSEN

TENV

TNOI

RNOI

RENV

RSEN

LOG

BUFF

BUFF

BUFF

BUFF

LOG

V I

DUPLEX

CONTROLLER

13 mV

ATTENUATOR

13 mV

V

dt

TEA1094

TEA1094A

MICROPHONE CHANNEL

LOGIC

I V

VOICE

SWITCH

V

ref

GND

GAT

MOUT

MICGND

IDT

SWT

STAB

SWR

21

(17)

20

(16)

18

(14)

16

(12)

14

(11)

13

(10)

(9)

8

(6)

R

GAT

to TEA106x

R

IDT

C

SWT

R

STAB

12

R

SWR

5

(4)

6

(5)

1

(1)

GAR

LSP

DLC/MUTER

V

DYNAMIC

LIMITER

BB

V I

LOUDSPEAKER CHANNEL

C

C

DLC

R

LSP

GAR

The pin numbers given in parenthesis are for the TEA1094A.
(1) TEA1094A only.

Fig.1 Block diagram.

1996 Jul 15 4

I V

2

VOLUME

CONTROL

RIN1

RIN2

VOL

(2)

(3)

11
(8)

MGE436

2

R

VOL

from

TEA106x

3

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

PINNING

SYMBOL

MUTER 1 1 dynamic limiter timing adjustment; receiver channel mute input

DLC/
RIN1 2 2 receiver amplifier input 1
RIN2 3 3 receiver amplifier input 2
n.c. 4 − not connected
GAR 5 4 receiver gain adjustment
LSP 6 5 loudspeaker amplifier output
n.c. 7 − not connected
GND 8 6 ground reference
n.c. 9 − not connected
V

BB

VOL 11 8 receiver volume adjustment
SWR 12 9 switching range adjustment
STAB 13 10 reference current adjustment
SWT 14 11 switch-over timing adjustment
n.c. 15 − not connected
IDT 16 12 idle mode timing adjustment
PD − 13 power-down input
n.c. 17 − not connected
MICGND 18 14 ground reference for the microphone amplifier
MUTET 19 15 transmit channel mute input
MOUT 20 16 microphone amplifier output
GAT 21 17 microphone gain adjustment
MIC 22 18 microphone input
RNOI 23 19 receive noise envelope timing adjustment
RENV 24 20 receive signal envelope timing adjustment
RSEN 25 21 receive signal envelope sensitivity adjustment
TNOI 26 22 transmit noise envelope timing adjustment
TENV 27 23 transmit signal envelope timing adjustment
TSEN 28 24 transmit signal envelope sensitivity adjustment

TEA1094 TEA1094A

PINS

DESCRIPTION

10 7 supply voltage

1996 Jul 15 5

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

handbook, halfpage

DLC/MUTER

Fig.2 Pin configuration (TEA1094).

RIN1
RIN2

n.c.

GAR

LSP

n.c.

GND

n.c.

V

BB

VOL

SWR

STAB

SWT

1
2
3
4
5
6
7
8

9
10
11
12
13

TEA1094

MGE434

28
27
26
25
24
23
22
21
20
19
18
17
16
1514

TSEN
TENV
TNOI
RSEN
RENV
RNOI
MIC
GAT
MOUT
MUTET
MICGND
n.c.
IDT
n.c.

handbook, halfpage

DLC/MUTER

Fig.3 Pin configuration (TEA1094A).

RIN1
RIN2

GAR

LSP

GND

V

BB

VOL

SWR

STAB

SWT

IDT

1
2
3
4
5
6

TEA1094A

7
8

9
10
11
12

MGE435

24
23
22
21
20
19
18
17

16
15
14
13

TSEN
TENV
TNOI
RSEN
RENV
RNOI
MIC
GAT
MOUT
MUTET
MICGND
PD

FUNCTIONAL DESCRIPTION
General

The values given in the functional description are typical
values unless otherwise specified.

A principle diagram of the TEA106X is shown on the left
side of Fig.4. The TEA106X is a transmission circuit of the
TEA1060 family intended for hand-set operation.
It incorporates a receiving amplifier for the earpiece, a
transmit amplifier for the microphone and a hybrid.
For more details on the TEA1060 family, please refer to

“data Handbook IC03”

. The right side of Fig.4 shows a
principle diagram of the TEA1094 and TEA1094A,
hands-free add-on circuits with a microphone amplifier, a
loudspeaker amplifier and a duplex controller.

As can be seen from Fig.4, a loop is formed via the
sidetone network in the transmission circuit and the
acoustic coupling between loudspeaker and microphone
of the hands-free circuit. When this loop gain is greater
than 1, howling is introduced. In a full duplex application,
this would be the case.
The loop-gain has to be much lower than 1 and therefore

has to be decreased to avoid howling. This is achieved by
the duplex controller. The duplex controller of the
TEA1094 and TEA1094A detects which channel has the
‘largest’ signal and then controls the gain of the
microphone amplifier and the loudspeaker amplifier so that
the sum of the gains remains constant.
As a result, the circuit can be in three stable modes:

1. Transmit mode (Tx mode).
The gain of the microphone amplifier is at its maximum

and the gain of the loudspeaker amplifier is at its
minimum.

2. Receive mode (Rx mode).
The gain of the loudspeaker amplifier is at its

maximum and the gain of the microphone amplifier is
at its minimum.

3. Idle mode.
The gain of the amplifiers is halfway between their

maximum and minimum value.

The difference between the maximum gain and minimum
gain is called the switching range.

1996 Jul 15 6

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

handbook, full pagewidth

acoustic
coupling

telephone

line

sidetone

HYBRID

TEA106x

Fig.4 Hands-free telephone set principles.

Supply: pins VBB, GND and PD

The TEA1094 and TEA1094A must be supplied with an
external stabilized voltage source between pins V

BB

and
GND. In the idle mode, without any signal, the internal
supply current is 3.1 mA at VBB=5V.

To reduce the current consumption during pulse dialling or
register recall (flash), the TEA1094A is provided with a
power-down (PD) input. When the voltage on PD is HIGH
the current consumption from VBB is 180 µA.

Microphone channel: pins MIC, GAT, MOUT, MICGND
and MUTET (see Fig.5)

The TEA1094 and TEA1094A have an asymmetrical
microphone input MIC with an input resistance of 20 kΩ.
The gain of the input stage varies according to the mode
of the TEA1094 and TEA1094A. In the transmit mode, the
gain is at its maximum; in the receive mode, it is at its
minimum and in the idle mode, it is halfway between
maximum and minimum.

DUPLEX

CONTROL

TEA1094

TEA1094A

MGE438

Switch-over from one mode to the other is smooth and
click-free. The output capability at pin MOUT is
20 µA (RMS).

In the transmit mode, the overall gain of the microphone
amplifier (from pins MIC to MOUT) can be adjusted from
0 dB up to 31 dB to suit specific application requirements.
The gain is proportional to the value of R

15.5 dB with R

= 30.1 kΩ.

GAT

A capacitor must be connected in parallel with R

and equals

GAT

GAT

to
ensure stability of the microphone amplifier. Together with
R

, it also provides a first-order low-pass filter.

GAT

By applying a HIGH level on pin MUTET, the microphone
amplifier is muted and the TEA1094 and TEA1094A are
automatically forced into the receive mode.

1996 Jul 15 7

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

handbook, full pagewidth

R

(17)

20

(16)

C

GAT

GAT

to TEA106X

19

MUTET

MIC

(15)

C

MIC

MIC

22

(18)

V I I V

V

BB

R

GAT 21

MOUT

to

envelope

detector

The pin numbers given in parenthesis refer to the TEA1094A.

from
voice
switch

Loudspeaker channel

handbook, full pagewidth

5

(4)

GAR

6

(5)

LSP

1

(1)

DLC/MUTER

C

R

C

LSP

C

GAR

GAR

DLC

to

logic

Fig.5 Microphone channel.

logic

V

BB

V I

DYNAMIC

LIMITER

to

MICGND

to/from

voice switch

18

(14)

I V

to

envelope

detector

2

VOLUME

CONTROL

MGD343

RIN1

RIN2

VOL

(3)

11
(8)

(2)
3

2

from

TEA106x

R

VOL

The pin numbers given in parenthesis refer to the TEA1094A.

Fig.6 Loudspeaker channel.

1996 Jul 15 8

MGE437

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

LOUDSPEAKER AMPLIFIER: PINS RIN1, RIN2, GAR AND LSP
The TEA1094 and TEA1094A have symmetrical inputs for

the loudspeaker amplifier with an input resistance of 40 kΩ
between RIN1 and RIN2 (2 × 20 kΩ). The input stage can
accommodate signals up to 390 mV (RMS) at room
temperature for 2% of total harmonic distortion (THD).
The gain of the input stage varies according to the mode
of the TEA1094 and TEA1094A. In the receive mode, the
gain is at its maximum; in the transmit mode, it is at its
minimum and in the idle mode, it is halfway between
maximum and minimum. Switch-over from one mode to
the other is smooth and click-free. The rail-to-rail output
stage is designed to power a loudspeaker connected as a
single-ended load (between LSP and GND).

In the receive mode, the overall gain of the loudspeaker
amplifier can be adjusted from 0 dB up to 33 dB to suit
specific application requirements. The gain from
RIN1 and RIN2 to LSP is proportional to the value of R
and equals 18.5 dB with R
connected in parallel with R

= 66.5 kΩ. A capacitor

GAR

can be used to provide a

GAR

GAR

first-order low-pass filter.

V

OLUME CONTROL: PIN VOL

The loudspeaker amplifier gain can be adjusted with the
potentiometer R

. A linear potentiometer can be used to

VOL

obtain logarithmic control of the gain at the loudspeaker
amplifier. Each 950 Ω increase of R

results in a gain

VOL

loss of 3 dB. The maximum gain reduction with the volume
control is internally limited to the switching range.

YNAMIC LIMITER: PIN DLC/MUTER

D
The dynamic limiter of the TEA1094 and TEA1094A

prevents clipping of the loudspeaker output stage and
protects the operation of the circuit when the supply
voltage at VBB falls below 2.9 V.

Hard clipping of the loudspeaker output stage is prevented
by rapidly reducing the gain when the output stage starts
to saturate. The time in which gain reduction is effected
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signals no longer cause saturation.
The gain of the loudspeaker amplifier then returns to its
normal value within the clipping release time (typically
250 ms). Both attack and release times are proportional to
the value of the capacitor C

. The total harmonic

DLC

distortion of the loudspeaker output stage, in reduced gain
mode, stays below 5% up to 10 dB (minimum) of input
voltage overdrive [providing V

is below 390 mV (RMS)].

RIN

When the supply voltage drops below an internal threshold
voltage of 2.9 V, the gain of the loudspeaker amplifier is
rapidly reduced (approximately 1 ms). When the supply
voltage exceeds 2.9 V, the gain of the loudspeaker
amplifier is increased again.

By forcing a level lower than 0.2 V on pin DLC/

MUTER, the
loudspeaker amplifier is muted and the TEA1094
(TEA1094A) is automatically forced into the transmit
mode.

Duplex controller

S

IGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN,

TENV, TNOI, RSEN, RENV

AND RNOI

The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelope detectors are shown in
Fig.7.

For the transmit channel, the input signal at MIC is 40 dB
amplified to TSEN. For the receive channel, the differential
signal between RIN1 and RIN2 is 0 dB amplified to RSEN.
The signals from TSEN and RSEN are logarithmically
compressed and buffered to TENV and RENV
respectively. The sensitivity of the envelope detectors is
set with R

TSEN

and R

. The capacitors connected in

RSEN

series with the two resistors block any DC component and
form a first-order high-pass filter. In the basic application,
see Fig.13, it is assumed that V
V

= 100 mV (RMS) nominal and both R

RIN

have a value of 10 kΩ. With the value of C

= 1 mV (RMS) and

MIC

TSEN

TSEN

and R

and C

RSEN
RSEN

at 100 nF, the cut-off frequency is at 160 Hz.
The buffer amplifiers leading the compressed signals to

TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Together with
the capacitor C

TENV

and C

, the timing of the signal

RENV

envelope monitors can be set. In the basic application, the
value of both capacitors is 470 nF. Because of the
logarithmic compression, each 6 dB signal increase
means 18 mV increase of the voltage on the envelopes
TENV or RENV at room temperature. Thus, timings can be
expressed in dB/ms. At room temperature, the 120 µA
sourced current corresponds to a maximum rise-slope of
the signal envelope of 85 dB/ms. This is sufficient to track
normal speech signals. The 1 µA current sunk by TENV or
RENV corresponds to a maximum fall-slope of 0.7 dB/ms.
This is sufficient for a smooth envelope and also eliminates
the effect of echoes on switching behaviour.

1996 Jul 15 9

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

To determine the noise level, the signals on TENV and
RENV are buffered to TNOI and RNOI. These buffers have
a maximum source current of 1 µA and a maximum sink
current of 120 µA. Together with the capacitors C
C

, the timing can be set. In the basic application of

RNOI

TNOI

and

Fig.13 the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms.

handbook, full pagewidth

DUPLEX CONTROLLER

LOG

from
microphone
amplifier

TSEN

28

(24)

R

C

TENV TNOI RSEN RENV RNOI

TSEN

TSEN

27

(23)

C

26

(22)

TENV

This is small enough to track background noise and not to
be influenced by speech bursts. The 120 µA current that is
sunk corresponds to a maximum fall-slope of
approximately 8.5 dB/ms. However, during the decrease
of the signal envelope, the noise envelope tracks the
signal envelope so it will never fall faster than
approximately 0.7 dB/ms. The behaviour of the signal
envelope and noise envelope monitors is illustrated in
Fig.8.

to logicto logic

LOG

from
loudspeaker
amplifier

C

TNOI

25

(21)

R

RSEN

C

RSEN

24

(20)

C

RENV

23

(19)

C

RNOI

The pin numbers given in parenthesis refer to the TEA1094A.

Fig.7 Signal and noise envelope detectors.

handbook, full pagewidth

INPUT SIGNAL

SIGNAL ENVELOPE

A: 85 dB/ms
B: 0.7 dB/ms

NOISE ENVELOPE

B: 0.7 dB/ms
C: 0.07 dB/ms

4 mV (RMS)

A

C

Fig.8 Signal and noise envelope waveforms.

36 mV

36 mV

1 mV (RMS)

B

B

MGD223

MBG354

A

C

B

B

time

1996 Jul 15 10

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

DECISION LOGIC: PINS IDT AND SWT

handbook, full pagewidth

16

(12)

IDT

27

(23)

26

(22)

TENV
TNOI

ATTENUATOR

13 mV

DUPLEX CONTROLLER

LOGIC

(1)

V

ref

SWT

14

(11)

R

IDT

C

SWT

24

(20)

RENV
RNOI

23

(19)

19

(15)

MUTET

from dynamic

The pin numbers given in parenthesis refer to the TEA1094A.
(1) When MUTET = HIGH, +10 µA is forced.

When DLC/MUTER < 0.2 V, −10 µA is forced.

limiter

13 mV

V

dt

Fig.9 Decision logic.

The TEA1094 and TEA1094A select their modes of
operation (transmit, receive or idle mode) by comparing
the signal and the noise envelopes of both channels. This
is executed by the decision logic. The resulting voltage on
pin SWT is the input for the voice-switch.

XX11− 10 µA
X10X

1X0X
XX10 0
000X 0

+ 10 µA
+ 10 µA

MGD224

As a result, the signal envelope on TENV is formed mainly
by the loudspeaker signal. To correct this, an attenuator is
connected between TENV and the TENV/RENV
comparator. Its attenuation equals that applied to the
microphone amplifier.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
V

− V

ENV

= 13 mV. This so called speech/noise

NOI

threshold is implemented in both channels.
The signal on MIC contains both speech and the signal

coming from the loudspeaker (acoustic coupling). When
receiving, the contribution from the loudspeaker overrules
the speech.

1996 Jul 15 11

When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1094 (TEA1094A) to go into the idle mode and the
user of the set would hear the dial tone fade away. To
prevent this, a dial tone detector is incorporated which, in
standard applications, does not consider input signals
between RIN1 and RIN2 as noise when they have a level
greater than 127 mV (RMS). This level is proportional to
R

.

RSEN

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

As can be seen from Fig.9, the output of the decision logic
is a current source. The logic table gives the relationship
between the inputs and the value of the current source.
It can charge or discharge the capacitor C

SWT

with a
current of 10 µA (switch-over). If the current is zero, the
voltage on SWT becomes equal to the voltage on IDT via
the high-ohmic resistor R

(idling). The resulting voltage

IDT

difference between SWT and IDT determines the mode of
the TEA1094 (TEA1094A) and can vary between

−400 and +400 mV (see Table 1).

Table 1 Modes of TEA1094; TEA1094A

V

− V

SWT

(mV) MODE

IDT

<−180 transmit mode
0 idle mode
>180 receive mode

The switch-over timing can be set with C
timing with C
Fig.13, C

SWT

SWT

and R

. In the basic application given in

IDT

is 220 nF and R

is 2.2 MΩ. This enables a

IDT

, the idle mode

SWT

switch-over time from transmit to receive mode or
vice-versa of approximately 13 ms (580 mV swing on
SWT). The switch-over time from idle mode to transmit
mode or receive mode is approximately 4 ms (180 mV
swing on SWT).

The switch-over time, from receive mode or transmit mode
to idle mode, is equal to 4 × R

IDTCSWT

and is

approximately 2 seconds (idle mode time).
The inputs MUTET and DLC/MUTER overrule the decision

logic. When MUTET goes HIGH, the capacitor C

SWT

is
charged with 10 µA thus resulting in the receive mode.
When the voltage on pin DLC/MUTER goes lower than

0.2 V, the capacitor C

is discharged with 10 µA thus

SWT

resulting in the transmit mode.

The difference between maximum and minimum is the so
called switching range. This range is determined by the
ratio of R
0 and 52 dB. R

SWR

and R

STAB

and is adjustable between

STAB

should be 3.65 kΩ and sets an
internally used reference current. In the basic application
diagram given in Fig.13, R

is 365 kΩ which results in a

SWR

switching range of 40 dB. The switch-over behaviour is
illustrated in Fig.11.

In the receive mode, the gain of the loudspeaker amplifier
can be reduced using the volume control. Since the
voice-switch keeps the sum of the gains constant, the gain
of the microphone amplifier is increased at the same time
(see dashed curves in Fig.11). In the transmit mode,
however, the volume control has no influence on the gain
of the microphone amplifier or the gain of the loudspeaker
amplifier. Consequently, the switching range is reduced
when the volume is reduced. At maximum reduction of
volume, the switching range becomes 0 dB.

DUPLEX CONTROLLER

to

microphone

amplifier

G

vtx

VOICE SWITCH

+ G

vrx =

from

SWT

C

13

R

STAB

(10)

STAB

(1)

R

(9)

SWR

12

SWR

V

OICE-SWITCH: PINS STAB AND SWR

A diagram of the voice-switch is illustrated in Fig.10. With
the voltage on SWT, the TEA1094 (TEA1094A)
voice-switch regulates the gains of the transmit and the
receive channel so that the sum of both is kept constant.

In the transmit mode, the gain of the microphone amplifier
is at its maximum and the gain of the loudspeaker amplifier
is at its minimum. In the receive mode, the opposite
applies. In the idle mode, both microphone and
loudspeaker amplifier gains are halfway.

1996 Jul 15 12

from

volume

control

The pin numbers given in parenthesis refer to the TEA1094A.
(1) C = constant.

to

loudspeaker

amplifier

MGD225

Fig.10 Voice switch.

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

handbook, halfpage

G

G

vrx

vtx,

(10 dB/div)

−400 −200 0 +400+200
SWT −

MBG351

V

IDT

idle

Tx mode Rx mode

G

vtx

G

vrx

mode

V

Fig.11 Switch-over behaviour.

(mV)

R

VOL
(Ω)

5700
3800
1900
0

0
1900
3800

5700

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n(max)

maximum voltage on all pins; except pins

V

− 0.4 VBB+ 0.4 V

GND

VBB, RIN1 and RIN2

V

RIN(max)

V

BB(max)

P

tot

maximum voltage on pins RIN1 and RIN2 V
maximum voltage on pin V
total power dissipation T

BB

amb

=75°C

− 1.2 VBB+ 0.4 V

GND

V

− 0.4 12.0 V

GND

TEA1094 − 1000 mW
TEA1094A − 910 mW
TEA1094T − 625 mW
TEA1094AT − 590 mW
TEA1094AM − 438 mW

T

stg

T

amb

IC storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C

1996 Jul 15 13

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

CHARACTERISTICS

V

=5V; V

BB

measured in test circuit of Fig.12; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

thermal resistance from junction to ambient in free air

TEA1094 45 K/W
TEA1094A 50 K/W
TEA1094T 70 K/W
TEA1094AT 75 K/W
TEA1094AM 104 K/W

= 0 V; f = 1 kHz; T

GND

=25°C; MUTET = LOW; PD = LOW (TEA1094A only); RL=50Ω; R

amb

VOL

=0Ω;

Supply (V

V

BB

I

BB

, GND and PD)

BB

supply voltage 3.3 − 12.0 V
current consumption from pin V

BB

POWER-DOWN INPUT PD (TEA1094A ONLY)
V

IL

V

IH

I

PD

I

BB(PD)

LOW level input voltage V
HIGH level input voltage 1.5 − VBB+ 0.4 V
input current PD = HIGH − 2.5 5 µA
current consumption from pin V

PD = HIGH − 180 240 µA

BB

in power-down condition

Microphone channel (MIC, GAT, MOUT, MUTET and MICGND)

M

ICROPHONE AMPLIFIER

|Zi| input impedance between

pins MIC and MICGND

G

vtx

voltage gain from pin MIC to

V

= 1 mV (RMS) 13 15.5 18 dB

MIC

MOUT in transmit mode

∆G
∆G

∆G

V

vtxr
vtxT

vtxf

notx

voltage gain adjustment with R
voltage gain variation with

temperature referenced to 25 °C
voltage gain variation with

frequency referenced to 1 kHz

GAT

V

= 1 mV (RMS);

MIC

T

= −25 to +75 °C

amb

V

= 1 mV (RMS);

MIC

f = 300 to 3400 Hz

noise output voltage at pin MOUT pin MIC connected to

MICGND through 200 Ω in
series with 10 µF;
psophometrically weighted
(P53 curve)

− 3.1 4.4 mA

− 0.4 − 0.3 V

GND

17 20 23 kΩ

−15.5 − +15.5 dB

−±0.3 − dB

−±0.3 − dB

−−100 − dBmp

1996 Jul 15 14

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TRANSMIT MUTE INPUT MUTET
V

IL

V

IH

I

MUTET

∆G

vtxm

LOW level input voltage V
HIGH level input voltage 1.5 − VBB+ 0.4 V
input current MUTET = HIGH − 2.5 5 µA
voltage gain reduction with

MUTET = HIGH − 80 − dB

MUTET active

− 0.4 − 0.3 V

GND

Loudspeaker channel (RIN1, RIN2, GAR, LSP and DLC/

MUTER)

LOUDSPEAKER AMPLIFIER
|Zi| input impedance between pins RIN1 or RIN2

17 20 23 kΩ

and GND
between pins RIN1 and

34 40 46 kΩ

RIN2

G

vrx

voltage gain in receive mode;

V

= 20 mV (RMS) 16 18.5 21 dB

RIN

between RIN1 and RIN2 to LSP

∆G

vrxr

∆G

vrxT

∆G

vrxf

V

RIN(rms)

V

norx(rms)

voltage gain adjustment with R

GAR

voltage gain variation with
temperature referenced to 25 °C

voltage gain variation with
frequency referenced to 1 kHz

maximum input voltage between
RIN1 and RIN2 (RMS value)

noise output voltage at pin LSP
(RMS value)

V

= 20 mV (RMS);

RIN

T

= −25 to +75 °C

amb

V

= 20 mV (RMS);

RIN

f = 300 to 3400 Hz
R

= 11.8 kΩ; for 2%

GAR

THD in input stage
inputs RIN1 and RIN2

short-circuited through

−18.5 − +14.5 dB

−±0.3 − dB

−±0.3 − dB

− 390 − mV

− 80 −µV

200 Ω in series with 10 µF;
psophometrically weighted

(P53 curve)
CMRR common mode rejection ratio − 50 − dB
∆G

vrxv

voltage gain variation related to
∆R

= 950 Ω

VOL

when total attenuation does

not exceed the switching

− 3 − dB

range
OUTPUT CAPABILITY
V

OSE(p-p)

output voltage
(peak-to-peak value)

V

= 300 mV (RMS);

RIN

note 1

V

= 150 mV (RMS);

RIN

R

= 374 kΩ; RL=33Ω;

GAR

3.5 4.5 − V

− 7.5 − V

VBB= 9.0 V; note 2
I

OM

maximum output current at LSP

150 500 − mA

(peak value)

1996 Jul 15 15

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

DYNAMIC LIMITER
t

att

t

rel

THD total harmonic distortion at

V

BB(th)

t

att

MUTE RECEIVE
V

DLC(th)

I

DLC(th)

∆G

vrxm

attack time when V

jumps from

RIN

R

= 374 kΩ−−5ms

GAR

20 mV to 20 mV + 10 dB
release time when V

RIN

jumps

R

= 374 kΩ−250 − ms

GAR

from 20 mV + 10 dB to 20 mV

R

V

=20mV+10dB

RIN

= 374 kΩ; t > t

GAR

att

− 0.9 5 %

VBB limiter threshold − 2.9 − V
attack time when VBB jumps below

V

BB(th)

threshold voltage required on pin

− 1 − ms

V

− 0.4 − 0.2 V

GND

DLC/MUTER to obtain mute
receive condition

threshold current sourced by

V

= 0.2 V − 100 −µA

DLC

pin DLC/MUTER in mute receive
condition

voltage gain reduction in mute

V

< 0.2 V − 80 − dB

DLC

receive condition

Envelope and noise detectors (TSEN, TENV, RSEN, RENV, RNOI and TNOI)

P

REAMPLIFIERS

G

v(TSEN)

G

v(RSEN)

voltage gain from MIC to TSEN 37.5 40 42.5 dB
voltage gain between RIN1 and

RIN2 to RSEN
LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
∆V

det(TSEN)

sensitivity detection on pin TSEN;

I

= 0.8 to 160 µA − 18 − mV

TSEN

voltage change on pin TENV

when doubling the current from

TSEN
∆V

det(RSEN)

sensitivity detection on

I

= 0.8 to 160 µA − 18 − mV

RSEN

pin RSEN; voltage change on

pin RENV when doubling the

current from RSEN
SIGNAL ENVELOPE DETECTORS
I

source(ENV)

maximum current sourced from

pin TENV or RENV
I

sink(ENV)

maximum current sunk by

pin TENV or RENV
∆V

ENV

voltage difference between

pins RENV and TENV

when 10 µA is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 3

−2.5 0 +2.5 dB

− 120 −µA

0.75 1 1.25 µA

−±3−mV

1996 Jul 15 16

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT

OISE ENVELOPE DETECTORS

N
I

source(NOI)

I

sink(NOI)

∆V

NOI

DIAL TONE DETECTOR
V

RINDT(rms)

Decision logic (IDT and SWT)

S

IGNAL RECOGNITION

∆V

Srx(th)

∆V

Stx(th)

SWITCH-OVER
I

source(SWT)

I

sink(SWT)

I

idle(SWT)

maximum current sourced from

pins TNOI or RNOI

maximum current sunk by

pins TNOI or RNOI

voltage difference between

pins RNOI and TNOI

threshold level at pins RIN1 and

RIN2 (RMS value)

threshold voltage between

pins RENV and RNOI to

switch-over from receive to idle

mode

threshold voltage between

pins TENV and TNOI to

switch-over from transmit to idle

mode

current sourced from pin SWT

when switching to receive mode

current sunk by pin SWT when

switching to transmit mode

current sourced from pin SWT in

idle mode

0.75 1 1.25 µA

− 120 −µA

when 5 µA is sourced from

−±3−mV
both RSEN and TSEN;
noise detectors tracking;
note 3

− 127 − mV

V

RIN

< V

; note 4 − 13 − mV

RINDT

note 4 − 13 − mV

7.5 10 12.5 µA

7.5 10 12.5 µA

− 0 −µA

Voice switch (STAB and SWR)

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

referenced to

SWR

−40 − +12 dB
365 kΩ

| voltage gain variation from

|∆G

v

− 20 − dB

transmit mode to idle mode on
both channels

G

tr

gain tracking (G

vtx+Gvrx

) during

−±0.5 − dB

switching, referenced to idle mode

Notes

1. Corresponds to 50 mW output power.

2. Corresponds to 200 mW output power.

3. Corresponds to ±1 dB tracking.

4. Corresponds to 4.3 dB noise/speech recognition level.

1996 Jul 15 17

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

handbook, full pagewidth

R

GAT

30.1
kΩ

V

RIN1

C

GAT

C

RIN1

220 nF
C

RIN2

220 nF

20

(16)

21

(17)

(2)

(3)

18

(14)

(6)

2

3

8

(1)

MOUT

GAT

RIN1

RIN2

MICGND

GND

PD

25

(21)

R

10 kΩ

C

(20)

RSEN

RSENCRENVCRNOI

100

nF

C

SWT

220

nF

R

IDT

2.2

MΩ

19

(15)(13)

MUTET IDT SWT STAB SWR

16

(12)

14

(11)

TEA1094

TEA1094A

24

470

nF

23

(19)

4.7
µF

28

(24)

R
10 kΩ

C

TSENCTENV

100

nF

TSEN

27

(23)

470

nF

26

(22)

C

4.7
µF

TNOI

R

3.65
kΩ

13

(10)

(1)

C

STAB

1

DLC

470

nF

VOLDLC/MUTERTNOITENVTSENRNOIRENVRSEN

R
365

12
(9)

V

BB

MIC

GAR

LSP

11
(8)

SWR

kΩ

R

VOL

10
(7)

22

(18)

5

(4)

6

(5)

C

MIC

220 nF

C

GAR

C

C

VBB

10 µF

V

VBB

V

LSP

47 µF

R

L

50 Ω

MIC

R

66.5

GAR

kΩ

The pin numbers given in parenthesis refer to the TEA1094A.
(1) TEA1094A only.

Fig.12 Test circuit.

1996 Jul 15 18

MGE439

1996 Jul 15 19

bo

line

C1

100

µF

R1
620 Ω

V

CC

TEA106x

V

EE

LN
MIC−

MIC+

QR+

SLPE

R9
20 Ω

C7

100 nF

C8

100 nF

C

GAT

R

GAT

C

100 nF

30.1
kΩ

RIN1

ok, full pagewidth

C

SWT

220

nF

20

(16)

21

(17)

(2)

(3)

18

(14)

(6)

2

3

8

(13)

(1)

MOUT

GAT

RIN1

RIN2

MICGND

GND

PD

25

(21)24(20)

R

RSEN

10 kΩ

C

RSENCRENVCRNOI

100

nF

R

IDT

2.2

MΩ

14

19

(15)

MUTET IDT SWT STAB SWR

16

(12)

(11)

TEA1094

TEA1094A

28

23

(24)27(23)26(22)

(19)

R

TSEN

10 kΩ

470

C

µF

TSENCTENV

100

nF

4.7

nF

470

nF

C

TNOI

4.7
µF

R

3.65

13

(10)

(1)

C

STAB

kΩ

1

DLC

470

nF

VOLDLC/MUTERTNOITENVTSENRNOIRENVRSEN

R

12
(9)

V

BB

MIC

GAR

LSP

11
(8)

365

kΩ

R

SWR

VOL

10
(7)

22

(18)

5

(4)

6

(5)

C

MIC

100 nF

C

GAR

C

LSP

47 µF

C

VBB

10 µF

R

LSP

50 Ω

V

R

2.2 kΩ

R

GAR

66.5
kΩ

VBB

MIC

MGE440

APPLICATION INFORMATION

Hands free IC TEA1094; TEA1094A

Philips Semiconductors Product specification

The pin numbers given in parenthesis refer to the TEA1094A.
(1) TEA1094A only.

Fig.13 Basic application diagram.

1996 Jul 15 20

b

ook, full pagewidth

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

ring

R1

620 Ω

LNV

C1

100 µF

tip

MICRO-

CONTROLLER
DP DTMF DTMF

interrupter

CC

TEA106x

V

EE

MIC−

MIC+

SLPE

1 kΩ

S1

100 nF

100 nF

QR+

R9
20 Ω

C7a

C7b

C8

10 µF

S2

100 µF

2.2 kΩ

C

RIN1

100 nF

20

(16)

(2)

18

(14)

(6)

2

8

from

microcontroller

(13)

(1)

PD

MOUT

TEA1094

TEA1094A

RIN1

MICGND

GND

(15)

MUTET

V

MIC

LSP

19

BB

10
(7)

22

(18)

6

(5)

C

MIC

100 nF

C

C

10 µF

2.2 kΩ

LSP

LSP

50 Ω

VBB

V

VBB

R

MIC

MGE441

The pin numbers given in parenthesis refer to the TEA1094A.
(1) TEA1094A only.

Fig.14 Application example.

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

PACKAGE OUTLINES

handbook, full pagewidth

DIP28: plastic dual in-line package; 28 leads (600 mil)

SOT117-1

seating plane

L

Z

28

1

pin 1 index

D

A

2

A

A

1

e

b

w M

b

1

15

E

14

c

M

(e )

M

E

1

H

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE
VERSION

SOT117-1

1 2

min.

max.

1.7

1.3

0.066

0.051

IEC JEDEC EIAJ

051G05 MO-015AH

b

b

1

0.53

0.38

0.020

0.014

0.32

0.23

0.013

0.009

REFERENCES

cD E weM

(1) (1)

36.0

35.0

1.41

1.34

1996 Jul 15 21

14.1

13.7

0.56

0.54

(1)

92-11-17
95-01-14

Z

max.

1.75.1 0.51 4.0

0.0670.20 0.020 0.16

L

3.9

15.80

3.4

15.24

EUROPEAN

PROJECTION

M

0.62

0.60

H

E

17.15

15.90

0.68

0.63

0.252.54 15.24

0.010.10 0.60

ISSUE DATE

e

1

0.15

0.13

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

DIP24: plastic dual in-line package; 24 leads (600 mil)

D

seating plane

L

Z

24

pin 1 index

e

b

SOT101-1

M

E

A

2

A

A

1

w M

b

1

13

E

c

(e )

1

M

H

1

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE
VERSION

SOT101-1

1 2

min.

max.

1.7

1.3

0.066

0.051

IEC JEDEC EIAJ

051G02 MO-015AD

b

b

1

0.53

0.38

0.021

0.015

0.32

0.23

0.013

0.009

REFERENCES

cD E e M

32.0

31.4

1.26

1.24

1996 Jul 15 22

12

14.1

13.7

0.56

0.54

(1)(1)

e

L

3.9

15.80

3.4

15.24

EUROPEAN

PROJECTION

M

0.62

0.60

E

17.15

15.90

0.68

0.63

1

0.15

0.13

H

w

0.252.54 15.24

0.010.10 0.60

ISSUE DATE

92-11-17
95-01-23

Z

max.

2.25.1 0.51 4.0

0.0870.20 0.020 0.16

(1)

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SO28: plastic small outline package; 28 leads; body width 7.5 mm

D

c

y

Z

28

pin 1 index

1

e

15

14

w M

b

p

SOT136-1

E

H

E

Q

A

2

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

mm

inches

A

max.

2.65

0.10

A

1

0.30

0.10

0.012

0.004

A

2

2.45

2.25

0.096

0.089

A

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

(1)E(1) (1)

cD

18.1

7.6

7.4

0.30

0.29

1.27

0.050

17.7

0.71

0.69

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE
VERSION

SOT136-1

IEC JEDEC EIAJ

075E06 MS-013AE

REFERENCES

1996 Jul 15 23

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

8

0.004

0.035

0.016

0

ISSUE DATE

95-01-24
97-05-22

o
o

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SO24: plastic small outline package; 24 leads; body width 7.5 mm

D

c

y

Z

24

pin 1 index

1

e

13

12

w M

b

p

SOT137-1

E

H

E

Q

A

2

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE
VERSION

SOT137-1

A

max.

2.65

0.10

A1A

0.30

0.10

0.012

0.004

A

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

2

2.45

2.25

0.096

0.089

IEC JEDEC EIAJ

075E05 MS-013AD

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

15.6

7.6

7.4

0.30

0.29

1.27

0.050

15.2

0.61

0.60

REFERENCES

1996 Jul 15 24

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

8

0.004

ISSUE DATE

0.035

0.016

95-01-24
97-05-22

0

o
o

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm

D

c

y

Z

24 13

A

2

A

pin 1 index

1

SOT340-1

E

H

E

Q

L

p

L

(A )

A

X

v M

A

A

3

θ

112

w M

b

e

DIMENSIONS (mm are the original dimensions)

UNIT A1A

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

A

max.

2.0

0.21

0.05

mm

OUTLINE
VERSION

SOT340-1 MO-150AG

A

0.25

b

3

p

0.38

0.25

2

1.80

1.65

IEC JEDEC EIAJ

p

cD

0.20

8.4

0.09

8.0

REFERENCES

0 2.5 5 mm

scale

(1)E(1) (1)

5.4

0.65 1.25

5.2

1996 Jul 15 25

detail X

eHELLpQZywv θ

7.9

7.6

1.03

0.63

0.9

0.7

EUROPEAN

PROJECTION

0.13 0.10.2

0.8

0.4

ISSUE DATE

93-09-08
95-02-04

o

8

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0

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

SO and SSOP

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO and

SSOP packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating

1996 Jul 15 26

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Jul 15 27

Philips Semiconductors – a worldwide company

Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. [phone], Fax. [phone]
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. [phone], Fax. [phone]
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. [phone], Fax. [phone]

Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15thfloor,

51 James Bourchier Blvd., 1407 SOFIA,
Tel. [phone], Fax. [phone]

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. [phone], Fax. [phone]

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. [phone], Fax. [phone]

Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. [phone], Fax. [phone]
Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. [phone], Fax. [phone]
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. [phone], Fax. [phone]
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. [phone], Fax. [phone]
Greece: No. 15, 25th March Street, GR 17778 TAVROS,

Tel. [phone], Fax. [phone]

Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.

Worli, MUMBAI 400 018, Tel. [phone], Fax. [phone]

Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. [phone], Fax. [phone]
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,

Tel. [phone], Fax. [phone]
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. [phone], Fax. [phone]
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. [phone], Fax. [phone]
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. [phone], Fax. [phone]
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. [phone], Fax. [phone]
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. [phone], Fax. [phone]

Middle East: see Italy

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. [phone], Fax. [phone]
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. [phone], Fax. [phone]
Norway: Box 1, Manglerud 0612, OSLO,

Tel. [phone], Fax. [phone]
Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. [phone], Fax. [phone]

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. [phone], Fax. [phone]

Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. [phone], Fax. [phone]
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,

Tel. [phone], Fax. [phone]

Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. [phone], Fax. [phone]

South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO - SP, Brazil,
Tel. [phone], Fax. [phone]

Spain: Balmes 22, 08007 BARCELONA,
Tel. [phone], Fax. [phone]

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. [phone], Fax. [phone]

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. [phone], Fax. [phone]

Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. [phone], Fax. [phone]

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. [phone], Fax. [phone]

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. [phone], Fax. [phone]

Ukraine: PHILIPS UKRAINE, 2A Akademika Koroleva str., Office 165,
252148 KIEV, Tel. [phone]/1642, Fax. [phone]

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. [phone], Fax. [phone]

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. [phone], Fax. [phone]

Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. [phone], Fax.[phone]

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. [phone]

© Philips Electronics N.V. 1996 SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 417021/1200/03/pp28 Date of release: 1996 Jul 15 Document order number: 9397 750 00926

Internet: http://www.semiconductors.philips.com/ps/
(1) TEA1094_3 June 26, 1996 11:51 am