Datasheet TEA1094T-C1, TEA1094AT-C1, TEA1094AM-C1, TEA1094A-C1, TEA1094T-C2 Datasheet (Philips)

DATA SH EET

Product specification
Supersedes data of 1996 Mar 11
File under Integrated Circuits, IC03

1996 Jul 15

INTEGRATED CIRCUITS

TEA1094; TEA1094A

Hands free IC

1996 Jul 15 2

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

FEATURES

• Low power consumption

• Power-down function (TEA1094A only)

• Microphone channel with:

– externally adjustable gain
– microphone mute function.

• Loudspeaker channel with:
– externally adjustable gain
– dynamic limiter to prevent distortion
– rail-to-rail output stage for single-ended load drive
– logarithmic volume control via linear potentiometer
– loudspeaker mute function.

• Duplex controller consisting of:
– signal envelope and noise envelope monitors for both

channels with:
externally adjustable sensitivity
externally adjustable signal envelope time constant
externally adjustable noise envelope time constant

– decision logic with:

externally adjustable switch-over timing
externally adjustable idle mode timing
externally adjustable dial tone detector in

receive channel

– voice switch control with:

adjustable switching range
constant sum of gain during switching
constant sum of gain at different volume settings.

APPLICATIONS

• Mains, battery or line-powered telephone sets with
hands-free/listening-in functions

• Cordless telephones

• Answering machines

• Fax machines.

GENERAL DESCRIPTION

The TEA1094 and TEA1094A are bipolar circuits intended
for use in mains, battery or line-powered telephone sets,
cordless telephones, answering machines and Fax
machines. In conjunction with a member of the TEA106X,
TEA111X families of transmission circuits, the devices
offer a hands-free function. They incorporate a
microphone amplifier, a loudspeaker amplifier and a
duplex controller with signal and noise monitors on
both channels.

ORDERING INFORMATION

TYPE NUMBER

PACKAGE

NAME DESCRIPTION VERSION

TEA1094 DIP28 plastic dual in-line package; 28 leads (600 mil) SOT117-1
TEA1094A DIP24 plastic dual in-line package; 24 leads (600 mil) SOT101-1
TEA1094T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1
TEA1094AT SO24 plastic small outline package; 24 leads; body width 7.5 mm SOT137-1
TEA1094AM SSOP24 plastic shrink small outline package; 24 leads; body width 5.3 mm SOT340-1

1996 Jul 15 3

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

QUICK REFERENCE DATA

VBB=5V; V

GND

= 0 V; f = 1 kHz; T

amb

=25°C; MUTET = LOW; PD = LOW (TEA1094A only); RL=50Ω; R

VOL

=0Ω;

measured in test circuit of Fig.12; unless otherwise specified.

Note

1. Corresponds to 200 mW output power.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

BB

supply voltage 3.3 − 12.0 V

I

BB

current consumption from pin V

BB

− 3.1 4.4 mA

G

vtx

voltage gain from pin MIC to
pin MOUT in transmit mode

V

MIC

= 1 mV (RMS);

R

GAT

= 30.1 kΩ

13 15.5 18 dB

∆G

vtxr

voltage gain adjustment with R

GAT

−15.5 − +15.5 dB

G

vrx

voltage gain in receive mode; the
difference between RIN1 and RIN2
to LSP

V

RIN

= 20 mV (RMS);

R

GAR

= 66.5 kΩ;

RL=50Ω

16 18.5 21 dB

∆G

vrxr

voltage gain adjustment with R

GAR

−18.5 − +14.5 dB

V

O(p-p)

output voltage (peak-to-peak value) V

RIN

= 150 mV (RMS);

R

GAR

= 374 kΩ;
RL=33Ω; VBB= 9.0 V;
note 1

− 7.5 − V

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

SWR

referenced to R

SWR

= 365 kΩ

−40 − +12 dB

T

amb

operating ambient temperature −25 − +75 °C

1996 Jul 15 4

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MGE436

LOG

BUFF

BUFF

LOG

BUFF

BUFF

LOGIC

V I

I V

VOICE

SWITCH

DYNAMIC

LIMITER

VOLUME

CONTROL

I V

V I

DLC/MUTER

LSP

GAR

RSEN

RENV

RNOI

TNOI

TENV

TSEN

MIC

MUTET

VOL

RIN2

RIN1

SWR

STAB

SWT

IDT

MICGND

MOUT

GAT

GND

V

BB

PD

(1)

10
(7)

(13)

19

(15)

22

(18)

28

(24)

27

(23)

26

(22)

23

(19)

24

(20)

25

(21)

5

(4)

6

(5)

1

(1)

8

(6)

21

(17)

20

(16)

18

(14)

16

(12)

14

(11)

13

(10)

12

(9)

2

(2)

2

3

(3)

11
(8)

13 mV

ATTENUATOR

13 mV

V

dt

V

ref

V

BB

V

BB

C

MIC

R

MIC

R

TSEN

C

TSEN

C

TENV

C

TNOI

C

RNOI

C

RENV

R

RSEN

C

RSEN

R

GAR

C

LSP

C

DLC

R

GAT

to TEA106x

R

IDT

C

SWT

R

STAB

R

SWR

from

TEA106x

R

VOL

LOUDSPEAKER CHANNEL

DUPLEX

CONTROLLER

MICROPHONE CHANNEL

TEA1094

TEA1094A

The pin numbers given in parenthesis are for the TEA1094A.
(1) TEA1094A only.

1996 Jul 15 5

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

PINNING

SYMBOL

PINS

DESCRIPTION

TEA1094 TEA1094A

DLC/

MUTER 1 1 dynamic limiter timing adjustment; receiver channel mute input
RIN1 2 2 receiver amplifier input 1
RIN2 3 3 receiver amplifier input 2
n.c. 4 − not connected
GAR 5 4 receiver gain adjustment
LSP 6 5 loudspeaker amplifier output
n.c. 7 − not connected
GND 8 6 ground reference
n.c. 9 − not connected
V

BB

10 7 supply voltage
VOL 11 8 receiver volume adjustment
SWR 12 9 switching range adjustment
STAB 13 10 reference current adjustment
SWT 14 11 switch-over timing adjustment
n.c. 15 − not connected
IDT 16 12 idle mode timing adjustment
PD − 13 power-down input
n.c. 17 − not connected
MICGND 18 14 ground reference for the microphone amplifier
MUTET 19 15 transmit channel mute input
MOUT 20 16 microphone amplifier output
GAT 21 17 microphone gain adjustment
MIC 22 18 microphone input
RNOI 23 19 receive noise envelope timing adjustment
RENV 24 20 receive signal envelope timing adjustment
RSEN 25 21 receive signal envelope sensitivity adjustment
TNOI 26 22 transmit noise envelope timing adjustment
TENV 27 23 transmit signal envelope timing adjustment
TSEN 28 24 transmit signal envelope sensitivity adjustment

1996 Jul 15 6

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

Fig.2 Pin configuration (TEA1094).

handbook, halfpage

DLC/MUTER

RIN1
RIN2

n.c.

GAR

LSP

n.c.

GND

n.c.

V

BB

VOL

SWR

STAB

SWT

TSEN
TENV
TNOI
RSEN

RNOI
MIC

RENV

GAT
MOUT
MUTET
MICGND
n.c.
IDT
n.c.

1
2
3
4
5
6
7
8

9
10
11
12
13

28
27
26
25
24
23
22
21
20
19
18
17
16
1514

TEA1094

MGE434

Fig.3 Pin configuration (TEA1094A).

handbook, halfpage

DLC/MUTER

RIN1
RIN2

GAR

LSP

GND

V

BB

VOL

SWR

STAB

SWT

IDT

TSEN
TENV
TNOI
RSEN

RNOI
MIC

RENV

GAT
MOUT
MUTET
MICGND
PD

1
2
3
4
5
6
7
8

9
10
11
12

24
23
22
21
20
19
18
17

16
15
14
13

TEA1094A

MGE435

FUNCTIONAL DESCRIPTION
General

The values given in the functional description are typical
values unless otherwise specified.

A principle diagram of the TEA106X is shown on the left
side of Fig.4. The TEA106X is a transmission circuit of the
TEA1060 family intended for hand-set operation.
It incorporates a receiving amplifier for the earpiece, a
transmit amplifier for the microphone and a hybrid.
For more details on the TEA1060 family, please refer to

“data Handbook IC03”

. The right side of Fig.4 shows a
principle diagram of the TEA1094 and TEA1094A,
hands-free add-on circuits with a microphone amplifier, a
loudspeaker amplifier and a duplex controller.

As can be seen from Fig.4, a loop is formed via the
sidetone network in the transmission circuit and the
acoustic coupling between loudspeaker and microphone
of the hands-free circuit. When this loop gain is greater
than 1, howling is introduced. In a full duplex application,
this would be the case.
The loop-gain has to be much lower than 1 and therefore

has to be decreased to avoid howling. This is achieved by
the duplex controller. The duplex controller of the
TEA1094 and TEA1094A detects which channel has the
‘largest’ signal and then controls the gain of the
microphone amplifier and the loudspeaker amplifier so that
the sum of the gains remains constant.
As a result, the circuit can be in three stable modes:

1. Transmit mode (Tx mode).
The gain of the microphone amplifier is at its maximum

and the gain of the loudspeaker amplifier is at its
minimum.

2. Receive mode (Rx mode).
The gain of the loudspeaker amplifier is at its

maximum and the gain of the microphone amplifier is
at its minimum.

3. Idle mode.
The gain of the amplifiers is halfway between their

maximum and minimum value.

The difference between the maximum gain and minimum
gain is called the switching range.

1996 Jul 15 7

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

Fig.4 Hands-free telephone set principles.

handbook, full pagewidth

MGE438

DUPLEX

CONTROL

HYBRID

telephone

line

sidetone

acoustic
coupling

TEA106x

TEA1094

TEA1094A

Supply: pins VBB, GND and PD

The TEA1094 and TEA1094A must be supplied with an
external stabilized voltage source between pins V

BB

and
GND. In the idle mode, without any signal, the internal
supply current is 3.1 mA at VBB=5V.

To reduce the current consumption during pulse dialling or
register recall (flash), the TEA1094A is provided with a
power-down (PD) input. When the voltage on PD is HIGH
the current consumption from VBB is 180 µA.

Microphone channel: pins MIC, GAT, MOUT, MICGND
and MUTET (see Fig.5)

The TEA1094 and TEA1094A have an asymmetrical
microphone input MIC with an input resistance of 20 kΩ.
The gain of the input stage varies according to the mode
of the TEA1094 and TEA1094A. In the transmit mode, the
gain is at its maximum; in the receive mode, it is at its
minimum and in the idle mode, it is halfway between
maximum and minimum.

Switch-over from one mode to the other is smooth and
click-free. The output capability at pin MOUT is
20 µA (RMS).

In the transmit mode, the overall gain of the microphone
amplifier (from pins MIC to MOUT) can be adjusted from
0 dB up to 31 dB to suit specific application requirements.
The gain is proportional to the value of R

GAT

and equals

15.5 dB with R

GAT

= 30.1 kΩ.

A capacitor must be connected in parallel with R

GAT

to
ensure stability of the microphone amplifier. Together with
R

GAT

, it also provides a first-order low-pass filter.

By applying a HIGH level on pin MUTET, the microphone
amplifier is muted and the TEA1094 and TEA1094A are
automatically forced into the receive mode.

1996 Jul 15 8

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

Fig.5 Microphone channel.

handbook, full pagewidth

MGD343

V I I V

C

MIC

V

BB

R

MIC

MUTET

MIC

from
voice
switch

to

envelope

detector

MICGND

MOUT

GAT 21

(17)

19

(15)

22

(18)

20

(16)

18

(14)

to TEA106X

R

GAT

C

GAT

to

logic

The pin numbers given in parenthesis refer to the TEA1094A.

Loudspeaker channel

Fig.6 Loudspeaker channel.

handbook, full pagewidth

MGE437

DYNAMIC

LIMITER

VOLUME

CONTROL

I V

V I

DLC/MUTER

LSP

GAR

VOL

RIN2

RIN1

5

(4)

6

(5)

1

(1)

2

2

(2)
3

(3)

11
(8)

V

BB

R

GAR

C

GAR

C

LSP

C

DLC

from

TEA106x

R

VOL

to

logic

to/from

voice switch

to

envelope

detector

The pin numbers given in parenthesis refer to the TEA1094A.

1996 Jul 15 9

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

LOUDSPEAKER AMPLIFIER: PINS RIN1, RIN2, GAR AND LSP
The TEA1094 and TEA1094A have symmetrical inputs for

the loudspeaker amplifier with an input resistance of 40 kΩ
between RIN1 and RIN2 (2 × 20 kΩ). The input stage can
accommodate signals up to 390 mV (RMS) at room
temperature for 2% of total harmonic distortion (THD).
The gain of the input stage varies according to the mode
of the TEA1094 and TEA1094A. In the receive mode, the
gain is at its maximum; in the transmit mode, it is at its
minimum and in the idle mode, it is halfway between
maximum and minimum. Switch-over from one mode to
the other is smooth and click-free. The rail-to-rail output
stage is designed to power a loudspeaker connected as a
single-ended load (between LSP and GND).

In the receive mode, the overall gain of the loudspeaker
amplifier can be adjusted from 0 dB up to 33 dB to suit
specific application requirements. The gain from
RIN1 and RIN2 to LSP is proportional to the value of R

GAR

and equals 18.5 dB with R

GAR

= 66.5 kΩ. A capacitor

connected in parallel with R

GAR

can be used to provide a

first-order low-pass filter.

V

OLUME CONTROL: PIN VOL

The loudspeaker amplifier gain can be adjusted with the
potentiometer R

VOL

. A linear potentiometer can be used to
obtain logarithmic control of the gain at the loudspeaker
amplifier. Each 950 Ω increase of R

VOL

results in a gain
loss of 3 dB. The maximum gain reduction with the volume
control is internally limited to the switching range.

D

YNAMIC LIMITER: PIN DLC/MUTER

The dynamic limiter of the TEA1094 and TEA1094A
prevents clipping of the loudspeaker output stage and
protects the operation of the circuit when the supply
voltage at VBB falls below 2.9 V.

Hard clipping of the loudspeaker output stage is prevented
by rapidly reducing the gain when the output stage starts
to saturate. The time in which gain reduction is effected
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signals no longer cause saturation.
The gain of the loudspeaker amplifier then returns to its
normal value within the clipping release time (typically
250 ms). Both attack and release times are proportional to
the value of the capacitor C

DLC

. The total harmonic
distortion of the loudspeaker output stage, in reduced gain
mode, stays below 5% up to 10 dB (minimum) of input
voltage overdrive [providing V

RIN

is below 390 mV (RMS)].

When the supply voltage drops below an internal threshold
voltage of 2.9 V, the gain of the loudspeaker amplifier is
rapidly reduced (approximately 1 ms). When the supply
voltage exceeds 2.9 V, the gain of the loudspeaker
amplifier is increased again.

By forcing a level lower than 0.2 V on pin DLC/

MUTER, the
loudspeaker amplifier is muted and the TEA1094
(TEA1094A) is automatically forced into the transmit
mode.

Duplex controller

S

IGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN,

TENV, TNOI, RSEN, RENV

AND RNOI

The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelope detectors are shown in
Fig.7.

For the transmit channel, the input signal at MIC is 40 dB
amplified to TSEN. For the receive channel, the differential
signal between RIN1 and RIN2 is 0 dB amplified to RSEN.
The signals from TSEN and RSEN are logarithmically
compressed and buffered to TENV and RENV
respectively. The sensitivity of the envelope detectors is
set with R

TSEN

and R

RSEN

. The capacitors connected in
series with the two resistors block any DC component and
form a first-order high-pass filter. In the basic application,
see Fig.13, it is assumed that V

MIC

= 1 mV (RMS) and

V

RIN

= 100 mV (RMS) nominal and both R

TSEN

and R

RSEN

have a value of 10 kΩ. With the value of C

TSEN

and C

RSEN

at 100 nF, the cut-off frequency is at 160 Hz.
The buffer amplifiers leading the compressed signals to

TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Together with
the capacitor C

TENV

and C

RENV

, the timing of the signal
envelope monitors can be set. In the basic application, the
value of both capacitors is 470 nF. Because of the
logarithmic compression, each 6 dB signal increase
means 18 mV increase of the voltage on the envelopes
TENV or RENV at room temperature. Thus, timings can be
expressed in dB/ms. At room temperature, the 120 µA
sourced current corresponds to a maximum rise-slope of
the signal envelope of 85 dB/ms. This is sufficient to track
normal speech signals. The 1 µA current sunk by TENV or
RENV corresponds to a maximum fall-slope of 0.7 dB/ms.
This is sufficient for a smooth envelope and also eliminates
the effect of echoes on switching behaviour.

1996 Jul 15 10

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

To determine the noise level, the signals on TENV and
RENV are buffered to TNOI and RNOI. These buffers have
a maximum source current of 1 µA and a maximum sink
current of 120 µA. Together with the capacitors C

TNOI

and

C

RNOI

, the timing can be set. In the basic application of
Fig.13 the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms.

This is small enough to track background noise and not to
be influenced by speech bursts. The 120 µA current that is
sunk corresponds to a maximum fall-slope of
approximately 8.5 dB/ms. However, during the decrease
of the signal envelope, the noise envelope tracks the
signal envelope so it will never fall faster than
approximately 0.7 dB/ms. The behaviour of the signal
envelope and noise envelope monitors is illustrated in
Fig.8.

Fig.7 Signal and noise envelope detectors.

handbook, full pagewidth

MGD223

LOG

28

(24)

27

(23)

26

(22)

25

(21)

24

(20)

23

(19)

LOG

from
microphone
amplifier

from
loudspeaker
amplifier

DUPLEX CONTROLLER

TSEN

R

TSEN

C

TSEN

C

TENV

C

TNOI

R

RSEN

C

RSEN

C

RENV

C

RNOI

TENV TNOI RSEN RENV RNOI

to logicto logic

The pin numbers given in parenthesis refer to the TEA1094A.

handbook, full pagewidth

MBG354

INPUT SIGNAL

SIGNAL ENVELOPE

NOISE ENVELOPE

4 mV (RMS)

1 mV (RMS)

A

C

C

36 mV

36 mV

B

B

B

A

B

time

A: 85 dB/ms
B: 0.7 dB/ms

B: 0.7 dB/ms
C: 0.07 dB/ms

Fig.8 Signal and noise envelope waveforms.

1996 Jul 15 11

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

DECISION LOGIC: PINS IDT AND SWT

Fig.9 Decision logic.

The pin numbers given in parenthesis refer to the TEA1094A.
(1) When MUTET = HIGH, +10 µA is forced.

When DLC/MUTER < 0.2 V, −10 µA is forced.

handbook, full pagewidth

MGD224

13 mV

13 mV

TENV
TNOI

RENV

MUTET

from dynamic

limiter

RNOI

V

dt

XX11− 10 µA

+ 10 µA
+ 10 µA

X10X
1X0X
XX10 0
000X 0

V

ref

R

IDT

C

SWT

SWT

16

(12)

14

(11)

27

(23)

26

(22)

24

(20)

23

(19)

19

(15)

IDT

DUPLEX CONTROLLER

LOGIC

(1)

ATTENUATOR

The TEA1094 and TEA1094A select their modes of
operation (transmit, receive or idle mode) by comparing
the signal and the noise envelopes of both channels. This
is executed by the decision logic. The resulting voltage on
pin SWT is the input for the voice-switch.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
V

ENV

− V

NOI

= 13 mV. This so called speech/noise

threshold is implemented in both channels.
The signal on MIC contains both speech and the signal

coming from the loudspeaker (acoustic coupling). When
receiving, the contribution from the loudspeaker overrules
the speech.

As a result, the signal envelope on TENV is formed mainly
by the loudspeaker signal. To correct this, an attenuator is
connected between TENV and the TENV/RENV
comparator. Its attenuation equals that applied to the
microphone amplifier.

When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1094 (TEA1094A) to go into the idle mode and the
user of the set would hear the dial tone fade away. To
prevent this, a dial tone detector is incorporated which, in
standard applications, does not consider input signals
between RIN1 and RIN2 as noise when they have a level
greater than 127 mV (RMS). This level is proportional to
R

RSEN

.

1996 Jul 15 12

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

As can be seen from Fig.9, the output of the decision logic
is a current source. The logic table gives the relationship
between the inputs and the value of the current source.
It can charge or discharge the capacitor C

SWT

with a
current of 10 µA (switch-over). If the current is zero, the
voltage on SWT becomes equal to the voltage on IDT via
the high-ohmic resistor R

IDT

(idling). The resulting voltage
difference between SWT and IDT determines the mode of
the TEA1094 (TEA1094A) and can vary between

−400 and +400 mV (see Table 1).

Table 1 Modes of TEA1094; TEA1094A

The switch-over timing can be set with C

SWT

, the idle mode

timing with C

SWT

and R

IDT

. In the basic application given in

Fig.13, C

SWT

is 220 nF and R

IDT

is 2.2 MΩ. This enables a
switch-over time from transmit to receive mode or
vice-versa of approximately 13 ms (580 mV swing on
SWT). The switch-over time from idle mode to transmit
mode or receive mode is approximately 4 ms (180 mV
swing on SWT).

The switch-over time, from receive mode or transmit mode
to idle mode, is equal to 4 × R

IDTCSWT

and is

approximately 2 seconds (idle mode time).
The inputs MUTET and DLC/MUTER overrule the decision

logic. When MUTET goes HIGH, the capacitor C

SWT

is
charged with 10 µA thus resulting in the receive mode.
When the voltage on pin DLC/MUTER goes lower than

0.2 V, the capacitor C

SWT

is discharged with 10 µA thus

resulting in the transmit mode.

V

OICE-SWITCH: PINS STAB AND SWR

A diagram of the voice-switch is illustrated in Fig.10. With
the voltage on SWT, the TEA1094 (TEA1094A)
voice-switch regulates the gains of the transmit and the
receive channel so that the sum of both is kept constant.

In the transmit mode, the gain of the microphone amplifier
is at its maximum and the gain of the loudspeaker amplifier
is at its minimum. In the receive mode, the opposite
applies. In the idle mode, both microphone and
loudspeaker amplifier gains are halfway.

V

SWT

− V

IDT

(mV) MODE

<−180 transmit mode
0 idle mode
>180 receive mode

The difference between maximum and minimum is the so
called switching range. This range is determined by the
ratio of R

SWR

and R

STAB

and is adjustable between

0 and 52 dB. R

STAB

should be 3.65 kΩ and sets an
internally used reference current. In the basic application
diagram given in Fig.13, R

SWR

is 365 kΩ which results in a
switching range of 40 dB. The switch-over behaviour is
illustrated in Fig.11.

In the receive mode, the gain of the loudspeaker amplifier
can be reduced using the volume control. Since the
voice-switch keeps the sum of the gains constant, the gain
of the microphone amplifier is increased at the same time
(see dashed curves in Fig.11). In the transmit mode,
however, the volume control has no influence on the gain
of the microphone amplifier or the gain of the loudspeaker
amplifier. Consequently, the switching range is reduced
when the volume is reduced. At maximum reduction of
volume, the switching range becomes 0 dB.

Fig.10 Voice switch.

The pin numbers given in parenthesis refer to the TEA1094A.
(1) C = constant.

G

vtx

+ G

vrx =

C

(1)

VOICE SWITCH

R

STAB

R

SWR

STAB

13

(10)

12

(9)

SWR

to

microphone

amplifier

from

SWT

from

volume

control

to

loudspeaker

amplifier

DUPLEX CONTROLLER

MGD225

1996 Jul 15 13

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n(max)

maximum voltage on all pins; except pins
VBB, RIN1 and RIN2

V

GND

− 0.4 VBB+ 0.4 V

V

RIN(max)

maximum voltage on pins RIN1 and RIN2 V

GND

− 1.2 VBB+ 0.4 V

V

BB(max)

maximum voltage on pin V

BB

V

GND

− 0.4 12.0 V

P

tot

total power dissipation T

amb

=75°C
TEA1094 − 1000 mW
TEA1094A − 910 mW
TEA1094T − 625 mW
TEA1094AT − 590 mW
TEA1094AM − 438 mW

T

stg

IC storage temperature −40 +125 °C

T

amb

operating ambient temperature −25 +75 °C

Fig.11 Switch-over behaviour.

handbook, halfpage

−400 −200 0 +400+200

G

vtx,

G

vrx

V

SWT −

V

IDT

(mV)

G

vtx

R

VOL
(Ω)

5700
3800

idle
mode

1900
0

0
1900
3800

5700

(10 dB/div)

Tx mode Rx mode

G

vrx

MBG351

1996 Jul 15 14

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

THERMAL CHARACTERISTICS

CHARACTERISTICS

V

BB

=5V; V

GND

= 0 V; f = 1 kHz; T

amb

=25°C; MUTET = LOW; PD = LOW (TEA1094A only); RL=50Ω; R

VOL

=0Ω;

measured in test circuit of Fig.12; unless otherwise specified.

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air

TEA1094 45 K/W
TEA1094A 50 K/W
TEA1094T 70 K/W
TEA1094AT 75 K/W
TEA1094AM 104 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (V

BB

, GND and PD)

V

BB

supply voltage 3.3 − 12.0 V

I

BB

current consumption from pin V

BB

− 3.1 4.4 mA
POWER-DOWN INPUT PD (TEA1094A ONLY)
V

IL

LOW level input voltage V

GND

− 0.4 − 0.3 V

V

IH

HIGH level input voltage 1.5 − VBB+ 0.4 V

I

PD

input current PD = HIGH − 2.5 5 µA

I

BB(PD)

current consumption from pin V

BB

in power-down condition

PD = HIGH − 180 240 µA

Microphone channel (MIC, GAT, MOUT, MUTET and MICGND)

M

ICROPHONE AMPLIFIER

|Zi| input impedance between

pins MIC and MICGND

17 20 23 kΩ

G

vtx

voltage gain from pin MIC to
MOUT in transmit mode

V

MIC

= 1 mV (RMS) 13 15.5 18 dB

∆G

vtxr

voltage gain adjustment with R

GAT

−15.5 − +15.5 dB
∆G

vtxT

voltage gain variation with
temperature referenced to 25 °C

V

MIC

= 1 mV (RMS);

T

amb

= −25 to +75 °C

−±0.3 − dB

∆G

vtxf

voltage gain variation with
frequency referenced to 1 kHz

V

MIC

= 1 mV (RMS);

f = 300 to 3400 Hz

−±0.3 − dB

V

notx

noise output voltage at pin MOUT pin MIC connected to

MICGND through 200 Ω in
series with 10 µF;
psophometrically weighted
(P53 curve)

−−100 − dBmp

1996 Jul 15 15

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

TRANSMIT MUTE INPUT MUTET
V

IL

LOW level input voltage V

GND

− 0.4 − 0.3 V

V

IH

HIGH level input voltage 1.5 − VBB+ 0.4 V

I

MUTET

input current MUTET = HIGH − 2.5 5 µA

∆G

vtxm

voltage gain reduction with
MUTET active

MUTET = HIGH − 80 − dB

Loudspeaker channel (RIN1, RIN2, GAR, LSP and DLC/

MUTER)

LOUDSPEAKER AMPLIFIER
|Zi| input impedance between pins RIN1 or RIN2

and GND

17 20 23 kΩ

between pins RIN1 and
RIN2

34 40 46 kΩ

G

vrx

voltage gain in receive mode;
between RIN1 and RIN2 to LSP

V

RIN

= 20 mV (RMS) 16 18.5 21 dB

∆G

vrxr

voltage gain adjustment with R

GAR

−18.5 − +14.5 dB
∆G

vrxT

voltage gain variation with
temperature referenced to 25 °C

V

RIN

= 20 mV (RMS);

T

amb

= −25 to +75 °C

−±0.3 − dB

∆G

vrxf

voltage gain variation with
frequency referenced to 1 kHz

V

RIN

= 20 mV (RMS);

f = 300 to 3400 Hz

−±0.3 − dB

V

RIN(rms)

maximum input voltage between
RIN1 and RIN2 (RMS value)

R

GAR

= 11.8 kΩ; for 2%

THD in input stage

− 390 − mV

V

norx(rms)

noise output voltage at pin LSP
(RMS value)

inputs RIN1 and RIN2
short-circuited through
200 Ω in series with 10 µF;
psophometrically weighted
(P53 curve)

− 80 −µV

CMRR common mode rejection ratio − 50 − dB
∆G

vrxv

voltage gain variation related to
∆R

VOL

= 950 Ω

when total attenuation does
not exceed the switching
range

− 3 − dB

OUTPUT CAPABILITY
V

OSE(p-p)

output voltage
(peak-to-peak value)

V

RIN

= 300 mV (RMS);

note 1

3.5 4.5 − V

V

RIN

= 150 mV (RMS);

R

GAR

= 374 kΩ; RL=33Ω;

VBB= 9.0 V; note 2

− 7.5 − V

I

OM

maximum output current at LSP
(peak value)

150 500 − mA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1996 Jul 15 16

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

DYNAMIC LIMITER
t

att

attack time when V

RIN

jumps from

20 mV to 20 mV + 10 dB

R

GAR

= 374 kΩ−−5ms

t

rel

release time when V

RIN

jumps

from 20 mV + 10 dB to 20 mV

R

GAR

= 374 kΩ−250 − ms

THD total harmonic distortion at

V

RIN

=20mV+10dB

R

GAR

= 374 kΩ; t > t

att

− 0.9 5 %

V

BB(th)

VBB limiter threshold − 2.9 − V

t

att

attack time when VBB jumps below
V

BB(th)

− 1 − ms

MUTE RECEIVE
V

DLC(th)

threshold voltage required on pin
DLC/MUTER to obtain mute
receive condition

V

GND

− 0.4 − 0.2 V

I

DLC(th)

threshold current sourced by
pin DLC/MUTER in mute receive
condition

V

DLC

= 0.2 V − 100 −µA

∆G

vrxm

voltage gain reduction in mute
receive condition

V

DLC

< 0.2 V − 80 − dB

Envelope and noise detectors (TSEN, TENV, RSEN, RENV, RNOI and TNOI)

P

REAMPLIFIERS

G

v(TSEN)

voltage gain from MIC to TSEN 37.5 40 42.5 dB

G

v(RSEN)

voltage gain between RIN1 and
RIN2 to RSEN

−2.5 0 +2.5 dB

LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
∆V

det(TSEN)

sensitivity detection on pin TSEN;
voltage change on pin TENV
when doubling the current from
TSEN

I

TSEN

= 0.8 to 160 µA − 18 − mV

∆V

det(RSEN)

sensitivity detection on
pin RSEN; voltage change on
pin RENV when doubling the
current from RSEN

I

RSEN

= 0.8 to 160 µA − 18 − mV

SIGNAL ENVELOPE DETECTORS
I

source(ENV)

maximum current sourced from
pin TENV or RENV

− 120 −µA

I

sink(ENV)

maximum current sunk by
pin TENV or RENV

0.75 1 1.25 µA

∆V

ENV

voltage difference between
pins RENV and TENV

when 10 µA is sourced
from both RSEN and
TSEN; envelope detectors
tracking; note 3

−±3−mV

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1996 Jul 15 17

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

Notes

1. Corresponds to 50 mW output power.

2. Corresponds to 200 mW output power.

3. Corresponds to ±1 dB tracking.

4. Corresponds to 4.3 dB noise/speech recognition level.

N

OISE ENVELOPE DETECTORS

I

source(NOI)

maximum current sourced from
pins TNOI or RNOI

0.75 1 1.25 µA

I

sink(NOI)

maximum current sunk by
pins TNOI or RNOI

− 120 −µA

∆V

NOI

voltage difference between
pins RNOI and TNOI

when 5 µA is sourced from
both RSEN and TSEN;
noise detectors tracking;
note 3

−±3−mV

DIAL TONE DETECTOR
V

RINDT(rms)

threshold level at pins RIN1 and
RIN2 (RMS value)

− 127 − mV

Decision logic (IDT and SWT)

S

IGNAL RECOGNITION

∆V

Srx(th)

threshold voltage between
pins RENV and RNOI to
switch-over from receive to idle
mode

V

RIN

< V

RINDT

; note 4 − 13 − mV

∆V

Stx(th)

threshold voltage between
pins TENV and TNOI to
switch-over from transmit to idle
mode

note 4 − 13 − mV

SWITCH-OVER
I

source(SWT)

current sourced from pin SWT
when switching to receive mode

7.5 10 12.5 µA

I

sink(SWT)

current sunk by pin SWT when
switching to transmit mode

7.5 10 12.5 µA

I

idle(SWT)

current sourced from pin SWT in
idle mode

− 0 −µA

Voice switch (STAB and SWR)

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

SWR

referenced to

365 kΩ

−40 − +12 dB

|∆G

v

| voltage gain variation from

transmit mode to idle mode on
both channels

− 20 − dB

G

tr

gain tracking (G

vtx+Gvrx

) during

switching, referenced to idle mode

−±0.5 − dB

SYMBOL P ARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1996 Jul 15 18

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

Fig.12 Test circuit.

handbook, full pagewidth

MGE439

VOLDLC/MUTERTNOITENVTSENRNOIRENVRSEN

GND

MICGND

RIN2

RIN1

GAT

MOUT

PD

(1)

MUTET IDT SWT STAB SWR

V

BB

MIC

GAR

LSP

20

(16)

21

(17)

2

(2)

3

(3)

18

(14)

8

(6)

25

(21)

24

(20)

28

(24)

27

(23)

26

(22)

23

(19)

1

(1)

11
(8)

6

(5)

5

(4)

22

(18)

10
(7)

12
(9)

13

(10)

14

(11)

16

(12)

19

(15)(13)

R

SWR

365

kΩ

R

STAB

3.65
kΩ

C

SWT

220

nF

R

IDT

2.2

MΩ

30.1
kΩ

R

GAT

C

GAT

C

RIN2

C

RIN1

220 nF

220 nF

R

RSEN

C

RSENCRENVCRNOI

C

TNOI

C

TSENCTENV

C

DLC

4.7
µF

4.7
µF

100

nF

470

nF

470

nF

R

TSEN

10 kΩ

R

VOL

C

GAR

R

GAR

66.5
kΩ

C

MIC

220 nF

V

MIC

V

VBB

C

VBB

10 µF

TEA1094

TEA1094A

C

LSP

47 µF

R

L

50 Ω

V

RIN1

10 kΩ

100

nF

470

nF

The pin numbers given in parenthesis refer to the TEA1094A.
(1) TEA1094A only.

1996 Jul 15 19

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

APPLICATION INFORMATION

bo

ok, full pagewidth

MGE440

C7

100 nF

C8

100 nF

20 Ω

R9

C1
100

µF

620 Ω

R1

V

CC

LN

MIC−

MIC+

QR+

V

EE

SLPE

line

TEA106x

VOLDLC/MUTERTNOITENVTSENRNOIRENVRSEN

GND

MICGND

RIN2

RIN1

GAT

MOUT

PD

(1)

MUTET IDT SWT STAB SWR

V

BB

MIC

GAR

LSP

20

(16)

21

(17)

2

(2)

3

(3)

18

(14)

8

(6)

25

(21)24(20)

28

(24)27(23)26(22)

23

(19)

1

(1)11(8)

6

(5)

5

(4)

22

(18)

10
(7)

12
(9)

13

(10)

14

(11)

16

(12)

19

(15)

(13)

R

SWR

365

kΩ

R

STAB

3.65
kΩ

C

SWT

220

nF

R

IDT

2.2
MΩ

30.1
kΩ

R

GAT

C

GAT

C

RIN1

100 nF

R

RSEN

C

RSENCRENVCRNOI

C

TNOI

C

TSENCTENV

C

DLC

4.7
µF

4.7
µF

100

nF

470

nF

470
nF

R

TSEN

10 kΩ

R

VOL

C

GAR

R

GAR

66.5
kΩ

C

MIC

100 nF

V

VBB

C

VBB

10 µF

TEA1094

TEA1094A

C

LSP

47 µF

50 Ω

R

LSP

10 kΩ

100

nF

470

nF

R

MIC

2.2 kΩ

Fig.13 Basic application diagram.

The pin numbers given in parenthesis refer to the TEA1094A.
(1) TEA1094A only.

1996 Jul 15 20

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

b

ook, full pagewidth

MGE441

MICRO-

CONTROLLER
DP DTMF DTMF

100 nF

100 nF

C7a

C7b

C

VBB

10 µF

V

VBB

R

MIC

2.2 kΩ

C

MIC

100 nF

C8

2.2 kΩ

TEA1094

TEA1094A

MUTET

PD

(1)

V

BB

MIC

C

LSP

50 Ω

LSP

10
(7)

22

(18)

C

RIN1

100 nF

2

(2)

MOUT

RIN1

MICGND

GND

20

(16)

18

(14)

8

(6)

TEA106x

MIC−

MIC+

QR+

LNV

CC

10 µF

S2

20 Ω

R9

tip

ring

620 Ω

R1

1 kΩ

100 µF

S1

SLPE

V

EE

LSP

6

(5)

(13)

19

(15)

from

microcontroller

100 µF

C1

interrupter

Fig.14 Application example.

The pin numbers given in parenthesis refer to the TEA1094A.
(1) TEA1094A only.

1996 Jul 15 21

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

PACKAGE OUTLINES

UNIT

A

max.

1 2

b

1

(1)

(1) (1)

cD E weM

H

L

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT117-1

92-11-17
95-01-14

A

min.

A

max.

b

Z

max.

M

E

e

1

1.7

1.3

0.53

0.38

0.32

0.23

36.0

35.0

14.1

13.7

3.9

3.4

0.252.54 15.24

15.80

15.24

17.15

15.90

1.75.1 0.51 4.0

0.066

0.051

0.020

0.014

0.013

0.009

1.41

1.34

0.56

0.54

0.15

0.13

0.010.10 0.60

0.62

0.60

0.68

0.63

0.0670.20 0.020 0.16

051G05 MO-015AH

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

e

D

A

2

Z

28

1

15

14

b

E

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

handbook, full pagewidth

DIP28: plastic dual in-line package; 28 leads (600 mil)

SOT117-1

1996 Jul 15 22

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

UNIT

A

max.

1 2

b

1

cD E e M

H

L

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

SOT101-1

92-11-17
95-01-23

A

min.

A

max.

b

w

M

E

e

1

1.7

1.3

0.53

0.38

0.32

0.23

32.0

31.4

14.1

13.7

3.9

3.4

0.252.54 15.24

15.80

15.24

17.15

15.90

2.25.1 0.51 4.0

0.066

0.051

0.021

0.015

0.013

0.009

1.26

1.24

0.56

0.54

0.15

0.13

0.010.10 0.60

0.62

0.60

0.68

0.63

0.0870.20 0.020 0.16

051G02 MO-015AD

M

H

c

(e )

1

M

E

A

L

seating plane

A

1

w M

b

1

e

D

A

2

Z

24

1

13

12

b

E

pin 1 index

0 5 10 mm

scale

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

Z

max.

(1)

(1)(1)

DIP24: plastic dual in-line package; 24 leads (600 mil)

SOT101-1

1996 Jul 15 23

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

UNIT

A

max.

A

1

A

2

A

3

b

p

cD

(1)E(1) (1)

eHELLpQ

Z

ywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

2.65

0.30

0.10

2.45

2.25

0.49

0.36

0.32

0.23

18.1

17.7

7.6

7.4

1.27

10.65

10.00

1.1

1.0

0.9

0.4

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT136-1

X

14

28

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

c

L

v M

A

e

15

1

(A )

3

A

y

0.25

075E06 MS-013AE

pin 1 index

0.10

0.012

0.004

0.096

0.089

0.019

0.014

0.013

0.009

0.71

0.69

0.30

0.29

0.050

1.4

0.055

0.419

0.394

0.043

0.039

0.035

0.016

0.01

0.25

0.01

0.004

0.043

0.016

0.01

0 5 10 mm

scale

SO28: plastic small outline package; 28 leads; body width 7.5 mm

SOT136-1

95-01-24
97-05-22

1996 Jul 15 24

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

UNIT

A

max.

A1A

2

A

3

b

p

cD

(1)E(1) (1)

eHELLpQ

Z

ywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

inches

2.65

0.30

0.10

2.45

2.25

0.49

0.36

0.32

0.23

15.6

15.2

7.6

7.4

1.27

10.65

10.00

1.1

1.0

0.9

0.4

8
0

o
o

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT137-1

X

12

24

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

c

L

v M

A

13

(A )

3

A

y

0.25

075E05 MS-013AD

pin 1 index

0.10

0.012

0.004

0.096

0.089

0.019

0.014

0.013

0.009

0.61

0.60

0.30

0.29

0.050

1.4

0.055

0.419

0.394

0.043

0.039

0.035

0.016

0.01

0.25

0.01

0.004

0.043

0.016

0.01

e

1

0 5 10 mm

scale

SO24: plastic small outline package; 24 leads; body width 7.5 mm

SOT137-1

95-01-24
97-05-22

1996 Jul 15 25

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

UNIT A1A

2

A

3

b

p

cD

(1)E(1) (1)

eHELLpQZywv θ

REFERENCES

OUTLINE
VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC EIAJ

mm

0.21

0.05

1.80

1.65

0.38

0.25

0.20

0.09

8.4

8.0

5.4

5.2

0.65 1.25

7.9

7.6

0.9

0.7

0.8

0.4

8
0

o
o

0.13 0.10.2

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.

1.03

0.63

SOT340-1 MO-150AG

93-09-08
95-02-04

X

w M

θ

A

A

1

A

2

b

p

D

H

E

L

p

Q

detail X

E

Z

e

c

L

v M

A

(A )

3

A

112

24 13

0.25

y

pin 1 index

0 2.5 5 mm

scale

SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm

SOT340-1

A

max.

2.0

1996 Jul 15 26

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

SOLDERING
Introduction

There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our

“IC Package Databook”

(order code 9398 652 90011).

DIP

SOLDERING BY DIPPING OR BY WA VE
The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg max

). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.

SO and SSOP

REFLOW SOLDERING
Reflow soldering techniques are suitable for all SO and

SSOP packages.
Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating

method. Typical reflow temperatures range from
215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.

W

AVE SOLDERING

Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.

If wave soldering cannot be avoided, the following
conditions must be observed:

• A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave)
soldering technique should be used.

• The longitudinal axis of the package footprint must

be parallel to the solder flow and must incorporate
solder thieves at the downstream end.

Even with these conditions, only consider wave
soldering SSOP packages that have a body width of

4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).

During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.

R

EPAIRING SOLDERED JOINTS

Fix the component by first soldering two diagonally­opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.

1996 Jul 15 27

Philips Semiconductors Product specification

Hands free IC TEA1094; TEA1094A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com/ps/
(1) TEA1094_3 June 26, 1996 11:51 am

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1996 SCA50
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
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Printed in The Netherlands 417021/1200/03/pp28 Date of release: 1996 Jul 15 Document order number: 9397 750 00926