Datasheet TEA1093T Datasheet (Philips)

INTEGRATED CIRCUITS

DATA SH EET

TEA1093

Hands-free IC

Product specification
Supersedes data of 1995 May 18
File under Integrated Circuits, IC03

1996 Feb 09

Philips Semiconductors Product specification

Hands-free IC TEA1093

FEATURES

• Line powered supply with:
– adjustable stabilized supply voltage
– power down function

• Microphone channel with:
– externally adjustable gain
– microphone mute function

• Loudspeaker channel with:
– externally adjustable gain
– dynamic limiter to prevent distortion
– rail-to-rail output stages for single-ended or

bridge-tied load drive
– logarithmic volume control via linear potentiometer
– loudspeaker mute function

• Duplex controller consisting of:
– signal envelope and noise envelope monitors for both

channels with:
externally adjustable sensitivity
externally adjustable signal envelope time constant
externally adjustable noise envelope time constant

– decision logic with:

externally adjustable switch-over timing
externally adjustable idle mode timing
externally adjustable dial tone detector in receive

channel

– voice switch control with:

adjustable switching range
constant sum of gain during switching
constant sum of gain at different volume settings.

APPLICATIONS

• Line-powered telephone sets with
hands-free/listening-in functions.

GENERAL DESCRIPTION

The TEA1093 is a bipolar circuit intended for use in
line-powered telephone sets. In conjunction with a
member of the TEA1060 family or PCA1070 transmission
circuits, the device offers a hands-free function for line
powered telephone sets. It incorporates a supply, a
microphone channel, a loudspeaker channel and a duplex
controller with signal and noise monitors on both channels.

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

TEA1093 DIP28 plastic dual in-line package; 28 leads (600 mil) SOT117-1

TEA1093T SO28 plastic small outline package; 28 leads; body width 7.5 mm SOT136-1

1996 Feb 09 2

PACKAGE

Philips Semiconductors Product specification

Hands-free IC TEA1093

QUICK REFERENCE DATA

V

= 4.2 V; V

SREF

RL=50Ω; R

VOL

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

SUP

V

BB

I

BB(pd)

operating supply current (pin SUP) 7 − 140 mA
stabilized supply voltage 3.35 3.6 3.85 V
current consumption from pin VBB in

power-down condition

I

SUP(pd)

current consumption from pin SUP in
power-down condition

G

vtx

voltage gain from pin MIC to pin MOUT in

transmit mode
∆G
G

∆G
V

O(p-p)

vtxr

vrx

vrxr

voltage gain adjustment with R

voltage gain in receive mode V

voltage gain adjustment with R

bridge-tied load (peak-to-peak value) V

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with R

referenced to R
T

amb

operating ambient temperature −25 − +75 °C

GND

=0V; I

= 15 mA; V

SUP

= 0 V (RMS); f = 1 kHz; T

SUP

=25°C; PD=LOW; MUTET = LOW;

amb

=0Ω; measured in test circuit of Fig.15; unless otherwise specified.

PD = HIGH; VBB= 3.6 V − 400 550 µA

GAT

the difference between RIN1 and RIN2
to LSP1 or LSP2 single-ended load

PD = HIGH; V

V

= 1 mV (RMS);

MIC

R

= 30.1 kΩ

GAT

= 20 mV (RMS);

RIN

R

= 66.5 kΩ;

GAR

RL=50Ω

= 4.5 V − 55 75 µA

sup

the difference between RIN1 and RIN2
to the difference between LSP1 and
LSP2 bridge-tied load

GAR

= 150 mV (RMS);

RIN

RL=33Ω; note 1

SWR

= 365 kΩ

SWR

12.5 15 17.5 dB

−10 − +10 dB

15.5 18 20.5 dB

21.5 24 26.5 dB

−15 − +15 dB

− 5.15 − V

−40 − +12 dB

Note

1. Corresponds to 100 mW output power.

1996 Feb 09 3

Philips Semiconductors Product specification

Hands-free IC TEA1093

BLOCK DIAGRAM

handbook, full pagewidth

TEA106X

TEA106X

V

BB

R

C

TSEN

C

TENV

C

TNOI

C

RNOI

C

RENV

to

to

C

MIC

MIC

R

TSEN

C

SUP

9

315 mV

7

SREF

19

MUTET

22

MIC

28

TSEN

V V

MICROPHONE CHANNEL

V I

DUPLEX CONTROLLER

LOG

TR1

SWITCH

SUPPLY

TR2

to dynamic

limiter

VOLTAGE

STABILIZER

POWER

DOWN

I V

TEA1093

BUFFER

27

TENV

13
mV

26

TNOI

23

RNOI

24

RENV

BUFFER

BUFFER

BUFFER

ATTENUATOR

13 mV

LOGIC

VOICE

SWITCH

V

BB

PD

VA

GAT

MOUT

MICGND

IDT

V

ref

SWT

STAB

SWR

10

17

15

8GND

21

20

18

16

14

13

12

VBB

R

GAT

to TEA106X

R

IDT

C

SWT

R

STAB

R

SWR

R

RSEN

25

C

C

RSEN

LSP1

R

GAR

C

DLC

RSEN

GAR

5

LSP1

6

DLC/

1

MUTER

4

LSP2

from voltage

stabilizer

DYNAMIC

LIMITER

LOG

V

dt

−1
LOUDSPEAKER CHANNEL

Fig.1 Block diagram.

1996 Feb 09 4

V I

I V

VOLUME

CONTROL

2

RIN1

RIN2

VOL 11

2

3

from
TEA106X

from
TEA106X

R

MGD216

VOL

Philips Semiconductors Product specification

Hands-free IC TEA1093

PINNING

SYMBOL PIN DESCRIPTION

MUTER 1 dynamic limiter timing adjustment,

DLC/

receiver channel mute input
RIN1 2 receiver amplifier input 1
RIN2 3 receiver amplifier input 2
LSP2 4 loudspeaker amplifier output 2
GAR 5 receiver gain adjustment
LSP1 6 loudspeaker amplifier output 1
SREF 7 supply reference input
GND 8 ground reference
SUP 9 supply input
V

BB

10 stabilized supply output
VOL 11 receiver volume adjustment
SWR 12 switching range adjustment
STAB 13 reference current adjustment
SWT 14 switch-over timing adjustment
VA 15 V

voltage adjustment

BB

IDT 16 idle mode timing adjustment
PD 17 power-down input
MICGND 18 ground reference for the

microphone amplifier
MUTET 19 transmit channel mute input
MOUT 20 microphone amplifier output
GAT 21 microphone gain adjustment
MIC 22 microphone input
RNOI 23 receive noise envelope timing

adjustment
RENV 24 receive signal envelope timing

adjustment
RSEN 25 receive signal envelope sensitivity

adjustment
TNOI 26 transmit noise envelope timing

adjustment
TENV 27 transmit signal envelope timing

adjustment
TSEN 28 transmit signal envelope

sensitivity adjustment

handbook, halfpage

DLC/MUTER

1
2

RIN1

3

RIN2

4

LSP2

5

GAR

6

LSP1

7

SREF

TEA1093

8

GND

9

SUP

10

V

BB

11

VOL

12

SWR

13

STAB

14

SWT

MGD217

Fig.2 Pin configuration.

28
27
26
25
24
23
22
21
20
19
18
17
16
15

TSEN
TENV
TNOI
RSEN
RENV
RNOI
MIC
GAT
MOUT
MUTET
MICGND
PD
IDT
VA

1996 Feb 09 5

Philips Semiconductors Product specification

Hands-free IC TEA1093

FUNCTIONAL DESCRIPTION

The values given in the functional description are typical
values except when otherwise specified.

A principle diagram of the TEA106X is shown on the left
side of Fig.3. The TEA106X is a transmission circuit of the
TEA1060 family intended for hand-set operation. It
incorporates a receiving amplifier for the earpiece, a
transmit amplifier for the microphone and a hybrid. For
more details on the TEA1060 family, please refer to

Handbook IC03”

. The right side of Fig.3 shows a principle

“Data

diagram of the TEA1093, a hands-free add-on circuit with
a microphone amplifier, a loudspeaker amplifier and a
duplex controller.

As can be seen from Fig.3, a loop is formed via the
sidetone network in the transmission circuit and the
acoustic coupling between loudspeaker and microphone
of the hands-free circuit. When this loop gain is greater
than 1, howling is introduced. In a full duplex application,

this would be the case. The loop-gain has to be much
lower than 1 and therefore has to be decreased to avoid
howling. This is achieved by the duplex controller.The
duplex controller of the TEA1093 detects which channel
has the ‘largest’ signal and then controls the gain of the
microphone amplifier and the loudspeaker amplifier so that
the sum of the gains remains constant. As a result, the
circuit can be in three stable modes:

1. Transmit mode (Tx mode): the gain of the microphone
amplifier is at its maximum and the gain of the
loudspeaker amplifier is at its minimum.

2. Receive mode (Rx mode): the gain of the loudspeaker
amplifier is at its maximum and the gain of the
microphone amplifier is at its minimum.

3. Idle mode: the gain of the amplifiers is halfway
between their maximum and minimum value.

The difference between the maximum gain and minimum
gain is called the switching range.

handbook, full pagewidth

telephone

line

HYBRID

sidetone

TEA106X TEA1093

DUPLEX

CONTROL

Fig.3 Hands-free telephone set principles.

acoustic
coupling

MGD218

1996 Feb 09 6

Philips Semiconductors Product specification

Hands-free IC TEA1093

Supply: pins SUP, SREF, VBB, GND, VA and PD

As can be seen from Fig.4, the line current is divided
between the speech-transmission circuit (I
the TEA1093 circuit (I

I

SUP=Iline

− ITR− I

). It can be shown that:

SUP

CC

TR+ICC

) and

Where:

ITR=V
V

SUP

R

SREF

SUP

− V

SREF

= 100 Ω

− V

SREF/RSREF

= 315 mV

ICC≈ 1mA
It follows that I

SUP

≈ I

LINE

− 4 mA.

The TEA1093 stabilizes its own supply voltage of 3.6 V at
VBB. The voltage on VBB can be adjusted by means of an
external resistor RVA.

handbook, full pagewidth

I

I

line

SUP

R

SREF

100 Ω

ITR ICC

9

SUP

315 mV

V V

SREF

7

TR1

SWITCH

When R

is connected between pin VA and GND, the

VA

voltage on VBB is increased, when connected between
pin VA and VBB, it is decreased. This is shown in Fig.5.
Two capacitors of 4.7 nF (C
to ensure stability of the supply block. When V
greater than VBB+ 0.4 V, the current I
VBB via TR1. When V

is less, the current is shunted to

SUP

SREF

and C

) are required

STAB

is supplied to

SUP

SUP

is

GND via TR2, which prevents distortion on the line.
To reduce current consumption during pulse dialling or

register recall (flash), the TEA1093 is provided with a
power-down (PD) input. When the voltage on PD is HIGH,
the current consumption from SUP is 55 µA and from
VBB400 µA. Therefore a capacitor of 470 µF (C

VBB

sufficient to power the TEA1093 during pulse dialling.

C

STAB

4.7 nF
V

10

BB

TR2

to dynamic

limiter

VOLTAGE

STABILIZER

POWER

DOWN

PD

VA

17

R

VA

15

C

VBB

470 µF

) is

line

V

CC

LN

TEA1093

TEA106X

V

SLPE

EE

C

SREF

4.7 nF

Fig.4 Supply arrangement.

1996 Feb 09 7

GND

8

MGD219

Philips Semiconductors Product specification

Hands-free IC TEA1093

Microphone channel: pin MIC, GAT, MOUT, MICGND and MUTET

10

handbook, halfpage

V

BB

(V)

8

6

4

3.6 V without RVA

2

11010

RVA(VA-GND)

RVA(VA-VBB)

2103

RVA (kΩ)

Fig.5 VBB as a function of RVA.

MGD220

The TEA1093 has an asymmetrical microphone input MIC
with an input resistance of 20 kΩ. The gain of the input
stage varies according to the mode of the TEA1093. In the
transmit mode, the gain is at its maximum; in the receive
mode, it is at its minimum and in the idle mode, it is halfway
between maximum and minimum. Switch-over from one
mode to the other is smooth and click-free. The output
capability at pin MOUT is 20 µA (RMS).

In the transmit mode, the overall gain of the microphone
amplifier (from pin MIC to MOUT) can be adjusted from
5 dB up to 25 dB to suit specific application requirements.
The gain is proportional to the value of R
15 dB typical with R

= 30.1 kΩ.

GAT

A capacitor must be connected in parallel with R

and equals

GAT

GAT

to
ensure stability of the microphone amplifier. Together with
R

, it also provides a first-order low-pass filter.

GAT

By applying a HIGH level on pin MUTET, the microphone
amplifier is muted and the TEA1093 is automatically
forced into the receive mode.

handbook, full pagewidth

V

BB

R

MIC

R

19

MUTET

C

MIC

22

MIC

envelope

detector

V I I V

to

from
voice
switch

to

logic

GAT 21

MOUT

MICGND

MGD221

GAT

20

18

to TEA106X

Fig.6 Microphone channel.

1996 Feb 09 8

Philips Semiconductors Product specification

Hands-free IC TEA1093

handbook, full pagewidth

R

C

GAR

LSP1

C

DLC

GAR

5

LSP1

6

DLC/MUTER

1

4

LSP2

from voltage

stabilizer

DYNAMIC

LIMITER

−1

Fig.7 Loudspeaker channel.

Loudspeaker channel

L

OUDSPEAKER AMPLIFIER: PINS RIN1, RIN2, GAR, LSP1

AND LSP2

The TEA1093 has symmetrical inputs for the loudspeaker
amplifier with an input resistance of 40 kΩ between RIN1
and RIN2 (2 × 20 kΩ). The input stage can accommodate
signals up to 390 mV (RMS) at room temperature for 2% of
total harmonic distortion (THD). The gain of the input stage
varies according to the mode of the TEA1093. In the
receive mode, the gain is at its maximum; in the transmit
mode, it is at its minimum and in the idle mode, it is halfway
between maximum and minimum. Switch-over from one
mode to the other is smooth and click-free. The rail-to-rail
output stage is designed to power a loudspeaker which is
connected as a single-ended load (between LSP1 and
GND) or as a bridge-tied load (between LSP1 and LSP2).

In the receive mode, the overall gain of the loudspeaker
amplifier can be adjusted from 3 dB up to 39 dB to suit
specific application requirements. The gain from RIN1 or
RIN2 to LSP1 is proportional to the value of R
equals 18 dB with R

= 66.5 kΩ. The second output

GAR

GAR

and

LSP2 is in opposite phase with LSP1. Therefore, in the
basic application, the gain between RIN1-RIN2 to
LSP1-LSP2 equals 24 dB typical with R
A capacitor connected in parallel with R

= 66.5 kΩ.

GAR

can be used to

GAR

provide a first-order low-pass filter.

I V

to

envelope

detector

RIN1 2

RIN2

VOL

3

11

MGD222

from
TEA106X

R

VOL

to

to/from

logic

voice switch

V I

VOLUME

CONTROL

V

OLUME CONTROL: PIN VOL

The loudspeaker amplifier gain can be adjusted with the
potentiometer R

. A linear potentiometer can be used to

VOL

obtain logarithmic control of the gain at the loudspeaker
amplifier. Each 950 Ω increase of R

results in a gain

VOL

loss of 3 dB. The maximum gain reduction with the volume
control is internally limited to the switching range.

D

YNAMIC LIMITER: PIN DLC/MUTER

The dynamic limiter of the TEA1093 prevents clipping of
the loudspeaker output stages and protects the operation
of the circuit when the supply condition falls below a
certain level.

Hard clipping of the loudspeaker output stages is
prevented by rapidly reducing the gain when the output
stages start to saturate. The time in which gain reduction
is effected (clipping attack time) is approximately a few
milliseconds. The circuit stays in the reduced gain mode
until the peaks of the loudspeaker signals no longer cause
saturation. The gain of the loudspeaker amplifier then
returns to its normal value within the clipping release time
(typical 250 ms). Both attack and release times are
proportional to the value of the capacitor C

. The total

DLC

harmonic distortion of the loudspeaker output stages, in
reduced gain mode, stays below 5% up to 10 dB
(minimum) of input voltage overdrive [providing V

RIN

is

below 390 mV (RMS)].

1996 Feb 09 9

Philips Semiconductors Product specification

Hands-free IC TEA1093

When the supply conditions drop below the required level,
the gain of the loudspeaker amplifier is reduced in order to
prevent the TEA1093 from malfunctioning. Only the gain of
the loudspeaker amplifier is affected since it is considered
to be the major power consuming part of the TEA1093.

When the TEA1093 experiences a loss of current, the
supply voltage VBB decreases. In this event, the gain of the
loudspeaker amplifiers is slowly reduced (approximately a
few seconds). When the supply voltage continues to
decrease and drops below an internal voltage threshold of

2.75 V, the gain of the loudspeaker amplifier is rapidly
reduced (approximately 1 ms). When normal supply
conditions are resumed, the gain of the loudspeaker
amplifier is increased again. This system ensures that in
the event of large continuous signals, all current is used to
power the loudspeaker while the voltage on pin V

BB

remains at its nominal value.
By forcing a level lower than 0.2 V on pin DLC/MUTER, the

loudspeaker amplifier is muted and the TEA1093 is
automatically forced into the transmit mode.

Duplex controller

S

IGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN,

TENV, TNOI, RSEN, RENV AND RNOI
The signal envelopes are used to monitor the signal level

strength in both channels. The noise envelopes are used to
monitor background noise in both channels. The signal and
noise envelopes provide inputs for the decision logic. The
signal and noise envelope detectors are shown in Fig.8.

For the transmit channel, the input signal at MIC is 40 dB,
amplified to TSEN. For the receive channel, the differential
signal between RIN1 and RIN2 is 0 dB amplified to RSEN.
The signals from TSEN and RSEN are logarithmically
compressed and buffered to TENV and RENV
respectively. The sensitivity of the envelope detectors is
set with R

TSEN

and R

. The capacitors connected in

RSEN

series with the two resistors block any DC component and
form a first-order high-pass filter. In the basic application,
see Fig.16, it is assumed that V
V

= 100 mV (RMS) nominal and both R

RIN

have a value of 10 kΩ. With the value of C

= 1 mV (RMS) and

MIC

TSEN
TSEN

and R
and C

RSEN
RSEN

at 100 nF, the cut-off frequency is at 160 Hz.
The buffer amplifiers leading the compressed signals to

TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Together with
the capacitor C

TENV

and C

, the timing of the signal

RENV

envelope monitors can be set. In the basic application, the
value of both capacitors is 470 nF. Because of the
logarithmic compression, each 6 dB signal increase
means 18 mV increase of the voltage on the envelopes
TENV or RENV at room temperature. Thus, timings can be
expressed in dB/ms. At room temperature, the 120 µA
sourced current corresponds to a maximum rise-slope of
the signal envelope of 85 dB/ms. This is sufficient to track
normal speech signals. The 1 µA current sunk by TENV
or RENV corresponds to a maximum fall-slope of

0.7 dB/ms. This is sufficient for a smooth envelope and
also eliminates the effect of echoes on switching
behaviour.

handbook, full pagewidth

DUPLEX CONTROLLER

LOG

from
microphone
amplifier

TSEN

28

(24)

R

TSEN

C

TSEN

TENV TNOI RSEN RENV RNOI

27

(23)

C

TENV

26

(22)

C

TNOI

Fig.8 Signal and noise envelope detectors.

1996 Feb 09 10

from
loudspeaker
amplifier

LOG

25

(21)

R

RSEN

C

RSEN

24

(20)

C

RENV

to logicto logic

23

(19)

C

RNOI

MGD223

Philips Semiconductors Product specification

g

Hands-free IC TEA1093

handbook, full pagewidth

SIGNAL ENVELOPE

NOISE ENVELOPE

INPUT SIGNAL

A: 85 dB/ms
B: 0.7 dB/ms

B: 0.7 dB/ms
C: 0.07 dB/ms

27

(23)

TENV
TNOI

26

(22)

ATTENUATOR

4 mV (RMS)

1 mV (RMS)

A

C

36 mV

36 mV

B

B

Fig.9 Signal and noise envelope waveforms.

DUPLEX CONTROLLER

(1)

LOGIC

13 mV

MBG354

A

C

V

ref

SWT

IDT

16

(12)

14

(11)

B

B

time

R

IDT

24

(20)

RENV
RNOI

23

(19)

19

(15)

MUTET

from dynamic

(1) When MUTET = HIGH, +10 µA is forced.

When DLC/

MUTER < 0.2 V, −10 µA is forced.

limiter

13 mV

V

dt

Fig.10 Decision logic.

1996 Feb 09 11

XX11− 10 µA
X10X

1X0X
XX10 0
000X 0

+ 10 µA
+ 10 µA

MGD224

C

SWT

Philips Semiconductors Product specification

Hands-free IC TEA1093

To determine the noise level, the signal on TENV and
RENV are buffered to TNOI and RNOI. These buffers have
a maximum source current of 1 µA and a maximum sink
current of 120 µA. Together with the capacitors C
C

, the timing can be set. In the basic application of

RNOI

TNOI

and

Fig.16, the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms. This is small enough to track
background noise and not to be influenced by speech
bursts. The 120 µA current that is sunk corresponds to a
maximum fall-slope of approximately 8.5 dB/ms. However,
during the decrease of the signal envelope, the noise
envelope tracks the signal envelope so it will never fall
faster than approximately 0.7 dB/ms. The behaviour of the
signal envelope and noise envelope monitors is
illustrated in Fig.9.

D

ECISION LOGIC: PINS IDT AND SWT

The TEA1093 selects its mode of operation (transmit,
receive or idle mode) by comparing the signal and the
noise envelopes of both channels. This is executed by the
decision logic. The resulting voltage on pin SWT is the
input for the voice-switch.

To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
V

ENV−VNOI

= 13 mV. This so called speech/noise

threshold is implemented in both channels.
The signal on MIC contains both speech and the signal

coming from the loudspeaker (acoustic coupling). When
receiving, the contribution from the loudspeaker overrules
the speech. As a result, the signal envelope on TENV is
formed mainly by the loudspeaker signal. To correct this,
an attenuator is connected between TENV and the
TENV/RENV comparator. Its attenuation equals that
applied to the microphone amplifier.

When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1093 to go into the idle mode and the user of the set
would hear the dial tone fade away. To prevent this, a dial
tone detector is incorporated which, in standard
applications, does not consider input signals between
RIN1 and RIN2 as noise when they have a level greater
than 127 mV (RMS). This level is proportional to R

RSEN

.

As can be seen from Fig.10, the output of the decision
logic is a current source. The logic table gives the
relationship between the inputs and the value of the
current source. It can charge or discharge the capacitor

with a current of 10 µA (switch-over). If the current is

C

SWT

zero, the voltage on SWT becomes equal to the voltage on
IDT via the high-ohmic resistor R

(idling). The resulting

IDT

voltage difference between SWT and IDT determines the
mode of the TEA1093 and can vary between −400 mV
and +400 mV.

Table 1 Modes of TEA1093

V

− V

SWT

(mV) MODE

IDT

<−180 transmit mode
0 idle mode
>+180 receive mode

The switch-over timing can be set with C
timing with C
Fig.16, C

SWT

SWT

and R

. In the basic application given in

IDT

is 220 nF and R

is 2.2 MΩ. This enables a

IDT

, the idle mode

SWT

switch-over time from transmit to receive mode or
vice-versa of approximately 13 ms (580 mV swing on
SWT). The switch-over time from idle mode to transmit
mode or receive mode is approximately 4 ms (180 mV
swing on SWT).

The switch over, from receive mode or transmit mode to
idle mode, is equal to 4 × R

IDT

× C

SWT

and is

approximately 2 seconds (idle mode time).
The inputs MUTET and DLC/MUTER overrule the decision

logic. When MUTET goes HIGH, the capacitor C

SWT

is
charged with 10 µA thus resulting in the receive mode.
When the voltage on pin DLC/MUTER goes lower than

0.2 V, the capacitor is discharged with 10µA thus resulting
in the transmit mode.

V

OICE-SWITCH: PINS STAB AND SWR

A diagram of the voice-switch is illustrated in Fig.11. With
the voltage on SWT, the TEA1093 voice-switch regulates
the gains of the transmit and the receive channel so that
the sum of both is kept constant.

1996 Feb 09 12

Philips Semiconductors Product specification

Hands-free IC TEA1093

In the transmit mode, the gain of the microphone amplifier
is at its maximum and the gain of the loudspeaker amplifier
is at its minimum. In the receive mode, the opposite
applies. In the idle mode, both microphone and
loudspeaker amplifier gains are halfway. The difference
between maximum and minimum is the so called switching
range. This range is determined by the ratio of R
R

and is adjustable between 0 and 52 dB. R

STAB

SWR
STAB

and

should be 3.65 kΩ and sets an internally used reference
current. In the basic application diagram given in Fig.16,
R

is 365 kΩ which results in a switching range

SWR

of 40 dB. The switch-over behaviour is illustrated in Fig.12.
In the receive mode, the gain of the loudspeaker amplifier

can be reduced using the volume control. Since the
voice-switch keeps the sum of the gains constant, the gain
of the microphone amplifier is increased at the same time
(see dashed curves in Fig.12). In the transmit mode,
however, the volume control has no influence on the gain
of the microphone amplifier or the gain of the loudspeaker
amplifier. Consequently, the switching range is reduced
when the volume is reduced. At maximum reduction of
volume, the switching range becomes 0 dB.

from
volume
control

(1) c - constant.

DUPLEX CONTROLLER

to

microphone

amplifier

G

vtx

VOICE SWITCH

loudspeaker

+ G

vrx =

to

amplifier

from

SWT

C

(1)

STAB

SWR

MGD225

13

(10)

12

(9)

R

STAB

R

SWR

handbook, halfpage

G

G

vrx

vtx,

(10 dB/div)

−400 −200 0 +400+200

Fig.11 Voice-switch.

SWT −

MBG351

V

IDT

idle

Tx mode Rx mode

G

vtx

G

vrx

mode

V

(mV)

R

VOL

(Ω)

5700
3800
1900
0

0
1900
3800

5700

Fig.12 Switch-over behaviour.

1996 Feb 09 13

Philips Semiconductors Product specification

Hands-free IC TEA1093

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

n(max)

V

RINmax

V

BBmax

V

SREFmax

V

SUPmax

I

SUPmax

P

tot

T

stg

T

amb

maximum voltage on all pins; except

V

− 0.4 V VBB+ 0.4 V V

GND

pins SUP, SREF, VBB, RIN1 and RIN2
maximum voltage on pin RIN1 or

V

− 1.2 V VBB+ 0.4 V V

GND

RIN2
maximum voltage on pin V

BB

maximum voltage on pin SREF V
maximum voltage on pin SUP V

V

− 0.4 V 12.0 V

GND

− 0.4 V V

GND

− 0.4 V 12.0 V

GND

SUP

+ 0.4 V V

maximum current on pin SUP see also Figs 13 and 14 − 140 mA
total power dissipation see also Figs 13 and 14;

T

=75°C

TEA1093 − 910 mW

amb

TEA1093T − 670 mW
storage temperature −40 +125 °C
operating ambient temperature −25 +75 °C

HANDLING

ESD in accordance with MIL STD883C; Method 3015 (HBM 1500 Ω, 100 pF); 3 pulses positive and 3 pulses negative
on each pin referenced to ground. Class 2: 2000 to 3999 V.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-a

thermal resistance from junction to ambient in free air

TEA1093 55 K/W
TEA1093T 75 K/W

1996 Feb 09 14

Philips Semiconductors Product specification

Hands-free IC TEA1093

150

handbook, halfpage

I

SUP

(mA)

130

110

90

70

50

468 12

(1) T

= 45 °C; P

amb

(2) T

= 55 °C; P

amb

(3) T

= 65 °C; P

amb

(4) T

= 75 °C; P

amb

Fig.13 TEA1093 safe operating area.

= 1.45 W.

tot

= 1.27 W.

tot

= 1.09 W.

tot

= 0.91 W.

tot

MGD226

(1)

(2)

(3)

(4)

150

handbook, halfpage

I

SUP

(mA)

130

110

90

MGD227

(1)

(2)

(3)

(4)

(5)

70

(6)

50

10

468 12

V

(V)

SUP

(1) T
(2) T
(3) T
(4) T
(5) T
(6) T

= 25 °C; P

amb

= 35 °C; P

amb

= 45 °C; P

amb

= 55 °C; P

amb

= 65 °C; P

amb

= 75 °C; P

amb

= 1.33 W.

tot

= 1.20 W.

tot

= 1.07 W.

tot

= 0.93 W.

tot

= 0.80 W.

tot

= 0.67 W.

tot

10

V

(V)

SUP

Fig.14 TEA1093T safe operating area.

1996 Feb 09 15

Philips Semiconductors Product specification

Hands-free IC TEA1093

CHARACTERISTICS

V

= 4.2 V; V

SREF

RL=50Ω; R

VOL

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

GND

=0V; I

= 15 mA; V

SUP

= 0 V (RMS); f = 1 kHz; T

SUP

=25°C; PD= LOW; MUTET = LOW;

amb

=0Ω; measured in test circuit of Fig.15; unless otherwise specified.

Supply (VA, SREF, SUP, V

V

∆V
∆V

BB

BB(ISUP)
BB(T)

stabilized supply voltage 3.35 3.6 3.85 V

VBB variation with I

VBB variation with temperature

, GND and PD)

BB

SUP

referenced to 25 °C

∆V

BB(RVA)

I

SUP(min)

V

SUP

V

SUP

− V

− V

VBB adjustment with R

VA

minimum operating current − 5.5 7.0 mA

minimum DC voltage drop

BB

between pin SUP and V

internal reference voltage 275 315 355 mV

SREF

BB

THD total harmonic distortion of AC

signal on SUP

Power-Down input PD

V

IL

V

IH

I

PD

LOW level input voltage V

HIGH level input voltage 1.5 − VBB+ 0.4 V V

input current in power-down

condition

I

SUP(PD)

current consumption from pin

SUP in power-down condition

I

BB(PD)

current consumption from pin

VBB in power-down condition

I

= 15 to 140 mA − 20 − mV

SUP

T

= −25 to + 75 °C −±20 − mV

amb

between VA and VBB;

− 3.2 − V

RVA= 180 kΩ
between V A and GND;

V

= 4.9 V;

SREF

− 4.5 − V

RVA=56kΩ

0.4 −− V

= 1 V (RMS) − 0.5 − %

V

SUP

− 0.4 V − 0.3 V

GND

PD = HIGH − 2.5 5.0 µA

PD = HIGH;
V

= 4.5 V

SUP

PD = HIGH;

− 55 75 µA

− 400 550 µA

VBB= 3.6 V

1996 Feb 09 16

Philips Semiconductors Product specification

Hands-free IC TEA1093

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Microphone channel (MIC, GAT, MOUT, MUTET and MICGND)

MICROPHONE AMPLIFIER
Zi input impedance between pin

MIC and MICGND

G

vtx

voltage gain from pin MIC to

MOUT in transmit mode

∆G

∆G

vtxr

vtxT

voltage gain adjustment with

R

GAT

voltage gain variation with

temperature referenced

to 25 °C

∆G

vtxf

voltage gain variation with

frequency referenced to 1 kHz

V

notx

noise output voltage at pin

MOUT

TRANSMIT MUTE INPUT MUTET
V

IL

V

IH

I

MUTET

∆G

vtxm

LOW level input voltage V

HIGH level input voltage 1.5 − VBB+ 0.4 V V

input current MUTET = HIGH − 2.5 5 µA

voltage gain reduction with

MUTET active

V

= 1 mV (RMS) 12.5 15 17.5 dB

MIC

V

= 1 mV (RMS);

MIC

T

= −25 to +75 °C

amb

V

= 1 mV (RMS);

MIC

f = 300 to 3400 Hz
pin MIC connected to

MICGND
through 200 Ω in
series with 10 µF;
psophometrically
weighted (P53 curve)

MUTET = HIGH − 80 − dB

17 20 23 kΩ

−10 − +10 dB

−±0.3 − dB

−±0.3 − dB

−−100 − dBmp

− 0.4 V − 0.3 V

GND

Loudspeaker channel (RIN1, RIN2, GAR, LSP1, LSP2 and DLC/

MUTER)

LOUDSPEAKER AMPLIFIER
Zi input impedance between pins RIN1 or

RIN2 and GND
between pins RIN1

and RIN2

G

vrx

voltage gain in receive mode V

= 20 mV (RMS)

RIN

the difference between RIN1
and RIN2 to the difference
between LSP1 and LSP2,
bridge-tied load

the difference between RIN1
and RIN2 to LSP1 or LSP2,
single-ended load

∆G

∆G

vrxr

vrxT

voltage gain adjustment with

R

GAR

voltage gain variation with

temperature referenced

V

= 20 mV (RMS);

RIN

T

= -25 to +75 °C

amb

to 25 °C

1996 Feb 09 17

17 20 23 kΩ

34 40 46 kΩ

21.5 24 26.5 dB

15.5 18 20.5 dB

−15 − +15 dB

−±0.3 − dB

Philips Semiconductors Product specification

Hands-free IC TEA1093

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

∆G

vrxf

V

RIN(rms)

V

norx(rms)

CMRR common mode rejection ratio − 50 − dB
∆G

vrxv

OUTPUT CAPABILITY
V

OSE(p-p)

V

OBTL(p-p)

I

OM(max)

DYNAMIC LIMITER
t

att

t

rel

THD total harmonic distortion at

V

BB(th)

t

att

voltage gain variation with

frequency referenced to 1 kHz

maximum input voltage

between RIN1 and RIN2

V

= 20 mV (RMS);

RIN

f = 300 to 3400 Hz
for 2% THD in input

stage; R

GAR

= 11.8 kΩ

−±0.3 − dB

− 390 − mV

(RMS value)

noise output voltage at pin

LSP1 or LSP2 (RMS value)

inputs RIN1 and RIN2
short-circuited

− 80 −µV

through 200 Ω in
series with 10 µF;
psophometrically
weighted (P53 curve)

voltage gain variation related to

∆R

= 950 Ω

VOL

when total attenuation
does not exceed the

− 3 − dB

switching range

single-ended load

(peak-to-peak value)

V

= 150 mV (RMS);

RIN

I

= 11 mA; note 1

SUP

V

= 150 mV (RMS);

RIN

I

= 16.5 mA;

SUP

1.2 1.45 − V

2.5 2.9 − V

note 2

bridge-tied load

(peak-to-peak value)

V

= 150 mV (RMS);

RIN

I

= 27 mA; note 2

SUP

V

= 150 mV (RMS);

RIN

I

= 35 mA; note 3

SUP

V

= 150 mV (RMS);

RIN

I

=62mA;

SUP

2.5 2.9 − V

3.5 4.0 − V

− 5.15 − V

RL=33Ω; note 4

 maximum output current at

150 300 − mA

LSP1 or LSP2 (peak value)

attack time when V

from 20 mV to 20 mV + 10 dB

release time when V

from 20 mV + 10 dB to 20 mV

V

= 20 mV + 10 dB

RIN

RIN

RIN

jumps

jumps

R

= 374 kΩ;

GAR

I

=20mA

SUP

R

= 374 kΩ;

GAR

I

=20mA

SUP

R

= 374 kΩ;

GAR

I

= 20 mA; t > t

SUP

−−5ms

− 250 − ms

− 0.9 5 %

att

VBB limiter threshold − 2.75 − V

attack time when VBB jumps

below V

BB(th)

− 1 − ms

1996 Feb 09 18

Philips Semiconductors Product specification

Hands-free IC TEA1093

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

MUTE RECEIVE
V

DLC(th)

I

DLC(th)

∆G

vrxm

Envelope and noise detectors (TSEN, TENV, RSEN and RENV)

P

REAMPLIFIERS

G

v(TSEN)

G

v(RSEN)

LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT
∆V

det(TSEN)

∆V

det(RSEN)

SIGNAL ENVELOPE DETECTORS
I

source(ENV)

I

sink(ENV)

∆V

ENV

NOISE ENVELOPE DETECTORS
I

source(NOI)

I

sink(NOI)

∆V

NOI

threshold voltage required on

V

− 0.4 V − 0.2 V

GND

pin DLC/MUTER to obtain

mute receive condition

threshold current sourced by pin

V

= 0.2 V − 80 −µA

DLC

DLC/MUTER in mute receive

condition

voltage gain reduction in mute

V

< 0.2 V − 80 − dB

DLC

receive condition

voltage gain from MIC to TSEN 38 40 42 dB

voltage gain between RIN1 and

−2 0 +2 dB

RIN2 to RSEN.

sensitivity detection on pin

I

= 0.8 to 160 µA − 18 − mV

TSEN

TSEN; voltage change on pin

TENV when doubling the

current from TSEN

sensitivity detection on pin

I

= 0.8 to 160 µA − 18 − mV

RSEN

RSEN; voltage change on pin

RENV when doubling the

current from RSEN

maximum current sourced from

− 120 −µA

pin TENV or RENV

maximum current sunk by pin

0.75 1 1.25 µA

TENV or RENV

voltage difference between pin

RENV and TENV

when 10 µA is
sourced from both

−±3−mV

RSEN and TSEN;
envelope detectors
tracking; note 5

maximum current sourced from

0.75 1 1.25 µA

pin TNOI or RNOI

maximum current sunk by pin

− 120 −µA

TNOI or RNOI

voltage difference between pin

RNOI and TNOI

when 5 µA is sourced
from both RSEN and

−±3−mV

TSEN; noise detectors
tracking; note 5

1996 Feb 09 19

Philips Semiconductors Product specification

Hands-free IC TEA1093

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

D

IAL TONE DETECTOR

V

RINDT(rms)

Decision logic (IDT and SWT)

S

IGNAL RECOGNITION

∆V

Srx(th)

∆V

Stx(th)

SWITCH-OVER
I

source(SWT)

I

sink(SWT)

I

idle(SWT)

threshold level at pin RIN1 and

RIN2 (RMS value)

threshold voltage between pin

RENV and RNOI to switch-over

from receive to idle mode

threshold voltage between pin

TENV and TNOI to switch-over

from transmit to idle mode

current sourced from pin SWT

when switching to receive mode

current sunk by pin SWT when

switching to transmit mode

current sourced from pin SWT

in idle mode

− 127 − mV

V

RIN

< V

; note 6 − 13 − mV

RINDT

note 6 − 13 − mV

7.5 10 12.5 µA

7.5 10 12.5 µA

− 0 −µA

Voice switch (STAB and SWR)

SWRA switching range − 40 − dB
∆SWRA switching range adjustment with

R

referenced to 365 kΩ

SWR

| voltage gain variation from

|∆G

v

−40 − 12 dB

− 20 − dB

transmit mode to idle mode on

both channels

G

tr

gain tracking (G

vtx+Gvrx

)

−±0.5 − dB
during switching, referenced to
idle mode

Notes

1. Corresponds to 5 mW output power.

2. Corresponds to 20 mW output power.

3. Corresponds to 40 mW output power.

4. Corresponds to 100 mW output power.

5. Corresponds to ±1 dB tracking.

6. Corresponds to 4.3 dB noise/speech recognition level.

1996 Feb 09 20

1996 Feb 09 21

Philips Semiconductors Product specification

Hands-free IC TEA1093

R

SREF

100 Ω

V

SREF

4.2 V

V

R

GAT

30.1 kΩ

RIN1

C

220 nF
C

220 nF

RIN1

RIN2

I

SUP

SREF

20

MOUT

21

GAT

2

RIN1

3

RIN2

18

MICGND

8

GND

RSEN RENV

7

25 24

R
10 kΩ

C

100 nF

RSEN

RSEN

SUP

919

C

RENV

470 nF

MUTET

RNOI

C

SWT

220 nF

R

IDT

2.2 MΩ

17

PD

16 14 13 12

IDT

SWT

TEA1093

TSEN TENV TNOI DLC/MUTER

23 28

C

RNOI

4.7 µF

R

TSEN

10 kΩ

C

TSEN

100 nF

27

C

TENV

470 nF

26

C

TNOI

4.7 µF

R

STAB

3.65 kΩ

STAB

111

C

DLC

470 nF

SWR

LSP2

GAR

LSP1

VOL

R
365 kΩ

VA

V

BB

MIC

R

SWR

VOL

R

VA

15

C

470 µF

R

GAR

66.5 kΩ

C

LSP1

47 µF

RL
50 Ω

V

VBB

MIC

MGD228

10

C

22

4

5

6

MIC

220 nF

Fig.15 Test circuit.

handbook, full pagewidth

1996 Feb 09 22

line

C1
100 µF

R1
620 Ω 100 Ω

V

CC

TEA106X

V

EE

LN

MIC −

MIC +

QR +

SLPE

R

R9
20 Ω

SREF

100 nF

100 nF

APPLICATION INFORMATION

Philips Semiconductors Product specification

Hands-free IC TEA1093

C

STAB

4.7 nF
C

C

TENV

470 nF

SWT

220 nF

TNOI

DLC/MUTER

C

TNOI

4.7 µF

R

STAB

3.65 kΩ

111

C

DLC

470 nF

R

SWR

365 kΩ

SWRSTAB

15

VA

V

BB

MIC

LSP2

GAR

LSP1

VOL

R

VOL

10

22

4

5

6

C

MIC

100 nF

R

GAR

66.5 kΩ

C

LSP1

47 µF

LSP
50 Ω

C

VBB

470 µF

R

MIC

MGD229

from

microcontroller

C

SREF

C7

C8

4.7 nF

C

GAT

C

RIN1

100 nF

C

RIN2

100 nF

R

GAT

30.1 kΩ

79

SREF IDT SWT

20

MOUT

21

GAT

2

RIN1

3

RIN2

18

MICGND

8

GND

RSEN

SUP

RENV

25 24 23 28 27 26

R

RSEN

10 kΩ

C

RSEN

100 nF

19 17 16 14 13 12

MUTET PD

TEA1093

RNOI

C

RENVCRNOI

470 nF

TSEN TENV

4.7 µF

R

TSEN

10 kΩ

C

TSEN

100 nF

R

IDT

2.2 MΩ

handbook, full pagewidth

Fig.16 Basic application diagram.

1996 Feb 09 23

620 Ω

Philips Semiconductors Product specification

Hands-free IC TEA1093

C

STAB

R

R1

SREF

100 Ω

390 Ω

100 µF

4.7 nF

from

microcontroller

ring

RIN1

RIN2

SREF SUP

20

MOUT

2

RIN1

3

RIN2

18

8

GND

7

MUTET

TEA1093

MICGND

V

C

1

100 µF

tip

CC

TEA106X

MICROCONTROLLER

DTMF

V

EE

interrupter

DP

DTMF

LN

MIC−

MIC+

QR+

SLPE

R9
20 Ω

S1

10 µF

S2

C7a

100 nF

C7b

100 nF

C

8

100 nF

C

SREF

4.7 nF

C

100 nF

C

100 nF

PD

V

MIC

LSP1

BB

17199

C

10

22

6

C

C

MIC

100 nF

LSP1

LSP

50 Ω

VBB

470 µF

R

MIC

MGD230

Fig.17 Application proposal.

handbook, full pagewidth

Philips Semiconductors Product specification

Hands-free IC TEA1093

PACKAGE OUTLINES

handbook, full pagewidth

DIP28: plastic dual in-line package; 28 leads (600 mil)

SOT117-1

seating plane

L

Z

28

1

pin 1 index

D

A

2

A

A

1

e

b

w M

b

1

15

E

14

c

M

(e )

M

E

1

H

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

A

A

A

UNIT

inches

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

max.

mm

OUTLINE
VERSION

SOT117-1

1 2

min.

max.

0.066

0.051

IEC JEDEC EIAJ

051G05 MO-015AH

b

1.7

1.3

b

0.53

0.38

0.020

0.014

1

0.32

0.23

0.013

0.009

REFERENCES

cD E weM

(1) (1)

36.0

35.0

1.41

1.34

1996 Feb 09 24

14.1

13.7

0.56

0.54

(1)

92-11-17
95-01-14

Z

max.

1.75.1 0.51 4.0

0.0670.20 0.020 0.16

L

3.9

3.4

EUROPEAN

PROJECTION

M

15.80

15.24

0.62

0.60

H

E

17.15

15.90

0.68

0.63

0.252.54 15.24

0.010.10 0.60

ISSUE DATE

e

1

0.15

0.13

Philips Semiconductors Product specification

Hands-free IC TEA1093

SO28: plastic small outline package; 28 leads; body width 7.5 mm

D

c

y

Z

28

pin 1 index

1

e

15

14

w M

b

p

SOT136-1

E

H

E

Q

A

2

A

1

L

p

L

detail X

(A )

A

X

v M

A

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

UNIT

mm

inches

A

max.

2.65

0.10

A

0.30

0.10

0.012

0.004

A

A

0.25

0.01

b

3

p

0.49

0.32

0.36

0.23

0.019

0.013

0.014

0.009

1

2

2.45

2.25

0.096

0.089

(1)E(1) (1)

cD

18.1

7.6

7.4

0.30

0.29

1.27

0.050

17.7

0.71

0.69

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

OUTLINE
VERSION

SOT136-1

IEC JEDEC EIAJ

075E06 MS-013AE

REFERENCES

1996 Feb 09 25

eHELLpQ

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

PROJECTION

0.25

0.25 0.1

0.01

0.01

EUROPEAN

ywv θ

Z

0.9

0.4

0.035

0.004

0.016

ISSUE DATE

95-01-24
97-05-22

o

8

o

0

Philips Semiconductors Product specification

Hands-free IC TEA1093

SOLDERING
Plastic dual in-line packages

Y DIP OR WAVE

B
The maximum permissible temperature of the solder is

260 °C; this temperature must not be in contact with the
joint for more than 5 s. The total contact time of successive
solder waves must not exceed 5 s.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified storage maximum. If the printed-circuit board has
been pre-heated, forced cooling may be necessary
immediately after soldering to keep the temperature within
the permissible limit.

R

EPAIRING SOLDERED JOINTS

Apply the soldering iron below the seating plane (or not
more than 2 mm above it). If its temperature is below
300 °C, it must not be in contact for more than 10 s;
if between 300 and 400 °C, for not more than 5 s.

Plastic small outline packages

BYWAVE
During placement and before soldering, the component

must be fixed with a droplet of adhesive. After curing the
adhesive, the component can be soldered. The adhesive
can be applied by screen printing, pin transfer or syringe
dispensing.

Y SOLDER PASTE REFLOW

B
Reflow soldering requires the solder paste (a suspension

of fine solder particles, flux and binding agent) to be
applied to the substrate by screen printing, stencilling or
pressure-syringe dispensing before device placement.

Several techniques exist for reflowing; for example,
thermal conduction by heated belt, infrared, and
vapour-phase reflow. Dwell times vary between 50 and
300 s according to method. Typical reflow temperatures
range from 215 to 250 °C.

Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 min. at 45 °C.

EPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING

R

IRON OR PULSE

-HEATED SOLDER TOOL)

Fix the component by first soldering two, diagonally
opposite, end pins. Apply the heating tool to the flat part of
the pin only. Contact time must be limited to 10 s at up to
300 °C. When using proper tools, all other pins can be
soldered in one operation within 2 to 5 s at between 270
and 320 °C. (Pulse-heated soldering is not recommended
for SO packages.)

For pulse-heated solder tool (resistance) soldering of VSO
packages, solder is applied to the substrate by dipping or
by an extra thick tin/lead plating before package
placement.

Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder bath is
10 s, if allowed to cool to less than 150 °C within 6 s.
Typical dwell time is 4 s at 250 °C.

A modified wave soldering technique is recommended
using two solder waves (dual-wave), in which a turbulent
wave with high upward pressure is followed by a smooth
laminar wave. Using a mildly-activated flux eliminates the
need for removal of corrosive residues in most
applications.

1996 Feb 09 26

Philips Semiconductors Product specification

Hands-free IC TEA1093

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1996 Feb 09 27

Philips Semiconductors – a worldwide company

Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)

BUENOS AIRES, Tel. [phone], Fax. [phone]

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th

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Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,

International Marketing and Sales, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Telex 35000 phtcnl, Fax. [phone]

SCDS47 © Philips Electronics N.V. 1996

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417021/1100/03/pp28 Date of release: 1996 Feb 09
Document order number: 9397 750 00634