Datasheet TEA1085T, TEA1085AT, TEA1085A, TEA1085 Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TEA1085; TEA1085A
Listening-in circuit for line-powered telephone sets
Preliminary specification File under Integrated Circuits, IC03A
March 1992
Page 2
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

FEATURES

Internal supply optimum current split-up
- low constant current (adjustable) in transmission IC
- nearly all line current available for listening-in adjustable supply voltage
Loudspeaker amplifier dynamic limiter providing low distortion and the
highest possible output power SE or BTL drive for loudspeaker volume control by potentiometer and/or logic inputs (e.g. microcontroller drive) fixed gain of 35 dB
Larsen level limiter low sensitivity for own speech due to 3rd-order filter
and attack delay adjustable voltage thresholds
Power down input
MUTE input
TEA1085/TEA1085A
- clickfree switching between listening-in mode and standby mode
TEA1085
- toggle function
- start-up in standby condition TEA1085A
- logic level input
TEA1085; TEA1085A

GENERAL DESCRIPTION

The TEA1085 and TEA1085A are bipolar ICs which have been designed for use in line-powered telephone sets and provide a listening-in facility for the received line signal via a loudspeaker. Nearly all the line current can be used for powering the loudspeaker. The circuits incorporate a supply circuit, loudspeaker amplifier dynamic limiter, MUTE circuit, power-down facility and logic inputs for gain setting. The devices also incorporate a Larsen Level Limiter to reduce howling effects. The ICs are intended for use in conjunction with a transmission circuit of the TEA1060 family.

ORDERING INFORMATION

EXTENDED TYPE
NUMBER
TEA1085/TEA1085A 24 DIL plastic SOT101B TEA1085T/TEA1085AT 24 SO24 plastic SOT137A
Notes
1. SOT101-1; 1998 Jun 18.
2. SOT137-1; 1998 Jun 18.
PINS PIN POSITION MATERIAL CODE
PACKAGE
(1) (2)
Page 3
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
SUP
V
BB
I
SUP
G
v
G
v
I
SUP
t
ad(RMS)
V
DTI(RMS)
G
v
T
amb
input current range 4 120 mA stabilized supply voltage 3.6 V current consumption PD = HIGH 55 −µA voltage gain loudspeaker amplifier
SE 35 dB BTL 41 dB
maximum gain reduction with logic
18 dB
inputs (3 steps) minimum input current
P
= 20 mW typ.
OUT
15 17 mA
into 50 SE P
= 40 mW typ.
OUT
−−32 mA
into 50 BTL
Larsen limiter attack delay time V
DTI
100 200 ms
jumps from 0 to 100 mV (RMS value) Larsen limiter threshold level Larsen mode 7 mV Larsen limiter preamplifier gain setting
30 52 dB
range operating ambient temperature range 25 −+75 °C
Page 4
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March 1992 4
dbook, full pagewidth
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
telephone sets
V
line
TEA1060
(LN)
V
1
SS
V
24
BB
19
PD
18
VA
(1)
V
BB
SREF 4
SUPPLY
4
SUP3SDC 2
PD
(1)
THL1 14
BB
THL212LLC 13
LARSEN
LEVEL
LIMITER
DCA 16
DTI 15
(1)
QLA 11
PREAMPLIFIER LEVEL LIMITER
LARSEN
LAI
109LAI+
TEA1060
(MIC)
TEA1060
(MIC)
V
BB
TEA1085
GSC1 8 GSC2 7
(1)
SIC 17
I-STABILIZATION
LOGIC GAIN
CONTROL
PEAK AND CURRENT
LIMITER
2 2 2
RECEIVING
AMPLIFIER
MUTE
TEA1085A
POWER
AMPLIFIER
START
CIRCUIT
QLS1
2221QLS2
TEA1085; TEA1085A
(1) To TEA1060 (SLPE). (2) See Fig.16.
23 DLC
(1)
20 5 MUTE LSI1 LSI2
(2)
6
MGR032
TEA1060 (VEE) TEA1060 (QR)
(1)
Fig.1 Block diagram.
Page 5
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

PIN CONFIGURATION

SYMBOL PIN DESCRIPTION
V
SS
SUP 2 positive supply SDC 3 supply amplifier decoupling SREF 4 supply reference input LSI1 5 loudspeaker amplifier input 1 LSI2 6 loudspeaker amplifier input 2 GSC2 7 logic input 2 for gain select GSC1 8 logic input 1 for gain select LAI 9 Larsen limiter preamplifier inverting
LAI+ 10 Larsen limiter preamplifier
QLA 11 Larsen limiter preamplifier output LLC 12 Larsen limiter capacitor THL2 13 Larsen limiter residual threshold level THL1 14 Larsen limiter attack delay threshold
DTI 15 Larsen limiter detector input DCA 16 Larsen limiter detector current
SIC 17 Larsen limiter current stabilizer VA 18 V PD 19 power-down input MUTE 20 MUTE input QLS1 21 loudspeaker amplifier output 1 QLS2 22 loudspeaker amplifier output 2 DLC 23 dynamic limiter capacitor V
BB
1 negative supply
input
non-inverting input
level
adjustment
voltage adjustment
BB
24 stabilized supply decoupling
handbook, halfpage
TEA1085; TEA1085A
V
1
SS
SUP
2
SDC
3
SREF
4
LSI1
5
LSI2
6
TEA1085
GSC2 GSC1
LAI LAI+
QLA
LLC
TEA1085A
7 8
9 10 11 12
MLA415
Fig.2 Pin configuration.
V
24
BB
DLC
23
QLS2
22
QLS1
21
MUTE
20 19
PD VA
18 17
SIC DCA
16
DTI
15
THL1
14
THL2
13
Page 6
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

FUNCTIONAL DESCRIPTION

Figure 1 illustrates a block diagram of the TEA1085/TEA1085A with external components and connections to the transmission IC. The TEA1085/TEA1085A are bipolar ICs which have been designed for use in line-powered telephone sets and provide a listening-in facility for the received line signal via a loudspeaker. Nearly all the line current can be used for powering the loudspeaker. The loudspeaker amplifier consists of a preamplifier, to amplify the earpiece signal from the transmission circuit and, a double push-pull output stage to drive the loudspeaker in the BTL (bridge tied load) or SE (single ended) configuration. The gain of the preamplifier is controlled by a dynamic limiter which prevents high distortion of the loudspeaker signal. This is achieved by preventing clipping of the loudspeaker signal, with respect to the supply voltage, and at too low supply current. Two logic inputs can be used to reduce the gain in 3 steps. Because of acoustic feedback from the loudspeaker to the microphone, howling signals (Larsen effect) can occur on the telephone line and in the loudspeaker. When the Larsen signal exceeds a voltage and time duration threshold the Larsen level limiter (LLL) will reduce the
TEA1085; TEA1085A
Larsen signal to a low level within a short period of time by reducing the gain of the receiving preamplifier. This is achieved by using the microphone signal as an input signal which is processed in the LLL via a preamplifier and 3rd-order filter. The MUTE input can be used to enable or disable the loudspeaker amplifier. The MUTE function of the TEA1085 has a toggle input to permit the use of a simple push-button switch. The MUTE function of the TEA1085A has a logic input to operate with a microcontroller. By activating the power-down input the current consumption of the circuit will be reduced, this enables pulse dialling or flash (register recall). An internal start circuit ensures normal start-up of the transmission IC and start-up of the listening-in IC in the standby mode. The TEA1085/TEA1085A are intended for use in conjunction with a member of the TEA1060 family and should be connected between LINE and SLPE of the transmission IC. The transmission characteristics (impedance, gain settings, for example) are not affected. The interconnection between the two ICs is illustrated in Fig.3.
handbook, full pagewidth
LINE
V
CC
TEA1060
V
EE SLPE
LN
MIC+
MIC
QR
Fig.3 Interconnection of the TEA1085/TEA1085A with the TEA1060.
SREF SUP
LAI+
TEA1085
TEA1085A
LAI
LSI1 LSI2
MGR033
QLS
V
SS
to TEA1060
(SLPE)
Page 7
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

Supply; SUP, SREF, VBB, VSSand VA

The line current is divided into I The supply arrangement is illustrated in Fig.4.
handbook, full pagewidth
LINE
I
line
I
CC
V
V
for the TEA1060 and I
TR
I
I
R1
CC
TEA1060
EE SLPE
TR
R20
LN
SUP
SUP
V
SREF
TEA1085
TEA1085A
for the TEA1085/TEA1085A.
SUP
TR1
int
I
TR2
BIAS
V
TEA1085; TEA1085A
V
BB
I
BBO
VOLTAGE
STABILIZER
SS
VA
R38
C20
R9
ITR is constant: ITR=V
/ R20; I
int
SUP=Iline
ICC− I
TR
Fig.4 Supply arrangement.
Where:
V
int
is an internal temperature compensated reference voltage with a typical value of
315 mV between SUP and SREF R20 is a resistor between SUP and SREF I
CC
is the internal current consumption of the
TEA106X ( 1 mA)
A practical value for R20 is 150 . This value of resistance produces a value for I
= 2 mA and I
TR
SUP
= I
line
3 mA.
The TEA1085/TEA1085A stabilizes its own supply voltage at VBB. Transistor TR1 provides the supplies for the internal circuits. TR2 is used to minimize the signal distortion on the line by momentarily diverting the input current to VSS whenever the instantaneous value of the voltage V
drops below the supply voltage VBB. VBB is
SUP
fixed to a typical value of 3.6 V but can be increased by means of an external resistor (R38) connected between
MGR034
VA and VSS or decreased by connecting this resistor between VA and VBB. The minimum level on VBB is restricted to 3.0 V; the level of the VBB limiter is also affected (see application report for further information). The supply at VBB is decoupled by a 470 µF capacitor.
The DC voltage (V transmission IC (V V
VSS = V
SUP
LNSLPE
VSS) is determined by the
SUP
+ V
); thus:
.
int
LNSLPE
The minimum DC voltage that can be applied to this input is V
Where: V
BB(max)
+ 0.4 V.
is the worst case supply voltage (this
BB(max)
depends on the setting of R38, which is connected between VA and VSS).
The internal current consumption of the TEA1085/TEA1085A (I V
VSS = 4.5 V, MUTE off). Thus the current available
SUP
for powering the loudspeaker is I The current I
consists of a bias current of 0.4 mA for
SUP0
the circuitry connected to SUP and current I
) is typically 4.2 mA (where
SUP0
I
SUP0
.
BB0
SUP
of 3.8 mA
which is used for the circuitry connected to VBB(see Fig.4).
Page 8
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
5.5
dbook, halfpage
V
BB
(V)
5.1
4.7
4.3
3.9
3.5 10 10
2
R38 (k)
MGR035
VBB = 3.60 V
3
10
TEA1085; TEA1085A

Logic gain control (GSC1 and GSC2) pins 7 and 8

The logic inputs GSC1 and GSC2 can be used to reduce the gain of the loudspeaker amplifier by means of the logic gain control function in 3 steps of 6 dB.
Table 1 Data for microcontroller drive of logic inputs
GSC2 GSC1
gain
(dB)
0 0 35 0 0 1 28.7 6.3 1 0 22.2 12.2 1 1 17 18
Where:
0 = connection to VSS or left open-circuit 1 = applying a voltage VSS+ 1.5 V
gain reduction
(dB)
Fig.5 Stabilized supply voltage as a function of
R38.
Supply amplifier stability (SDC) pin 3
To ensure stability of the TEA1085/TEA1085A, in combination with a transmission IC of the TEA1060 family, a 47 pF capacitor connected between SDC and SUP and a 150 µH coil connected between SUP and the positive line terminal (Fig.16) is required.
Loudspeaker amplifier (LSI1/LSI2 and QLS1/QLS2) pins 5/6, 21/22
The TEA1085/TEA1085A have symmetrical inputs at LSI1 and LSI2. The input signal is normally taken from the earpiece output of the transmission circuit via a resistive attenuator (see Fig.3). The amount of attenuation must be chosen in accordance with the receive gain of the transmission IC (which depends on the sensitivity of the earpiece transducer). The maximum input signal level is 450 mV(RMS) at T
= +25 °C.
amb
The outputs QLS1 and QLS2 can be used for single ended drive (SE) or bridge tied load drive (BTL). The output stages have been optimized for use with a 50 loudspeaker (e.g. Philips type AD2071). The gain of the amplifier is fixed to 35 dB for the SE drive and 41 dB for the BTL drive (when the inputs for logic control are left open-circuit or are connected to VSS). The volume control can be obtained by using a potentiometer at the input and/or by the logic control function.
Page 9
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

Dynamic limiter (DLC) pin 23

To prevent distortion of the signal at the loudspeaker outputs the gain of the amplifier is reduced rapidly when:
the peaks of the signal at the loudspeaker outputs exceed an internally determined threshold (voltage limiter)
the DC current into SUP is insufficient (current limiter)
the voltage at VBB decreases below an internally
determined threshold, typically 2.9 V (VBB limiter)
The time in which the gain reduction is effected is the 'attack time'; this is very short in the first and third instance and relatively long in the second instance. The circuit will remain in the gain-reduced condition until the peaks of the output signal remain below the threshold level. The gain will then return to a nominal level after a time determined by the capacitor connected to DLC (release time).
TEA1085; TEA1085A

MUTE input (MUTE) pin 20; TEA1085A

This MUTE is provided with a logic input to operate with a microcontroller for instance. The loudspeaker amplifier is disabled when the MUTE input is LOW (connected to VSS or open input). A HIGH level at the MUTE input enables the amplifier in the listening-in mode.

MUTE input (MUTE) pin 20; TEA1085

The MUTE function is provided with a toggle input and is designed to switch between the standby condition and the listening-in condition on the rising edge of the input MUTE signal (see Fig.6). In the basic application the MUTE input must be LOW (connected to V operate the MUTE toggle (see Fig.7). Debouncing can be realized by means of a small capacitor connected between MUTE and VSS. An internal start circuit ensures that the circuit always starts up in the standby condition.
). A simple push-button can be used to
SS
handbook, full pagewidth
handbook, full pagewidth
LSI1
MUTE
QLS1
standby standbylistening-in
Fig.6 Mute toggle function of the TEA1085.
MUTE MUTE
(a) Break contact. (b) Make contact.
10 k
MGR036
V
BB
MLA055
Fig.7 Mute switch alternatives with the TEA1085.
Page 10
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

Power down input (PD) pin 19

During pulse dialling or register recall (timed loop break) the telephone line is interrupted, thereby breaking the supply to the transmission and listening-in circuits. The capacitor connected to VBB provides the supply for the listening-in circuit during the supply breaks. By making the PD input HIGH during the loop break the requirement on the capacitor is eased and, consequently, the internal (standby) current consumption I VBB is reduced from 3.8 mA to 400 µA typical. So that the transmission circuit is not affected transistors TR1 and TR2 are inhibited and the bias current is reduced from 0.4 mA to 55 µA with V
= 4.5 V in the following
SUP
equation: I (where 4.2 V < V
SUP(PD)
= I
BIAS(PD)
= (V
< VBB+ 3 V)
SUP
2Vd) / Ra
SUP
2Vd = the voltage drop across 2 internal diodes ( 1.3 V) Ra = an internal resistor of typical 60 k
(Fig.4) at
BBO
TEA1085; TEA1085A
I
= 1.25 / R36; when R36 = 120 k, I
SIC
Changing the value of R36 will affect the timing of the Larsen level limiter system.
Larsen limiter preamplifier (LAI1/LAI2 and QLA) pins 9/10 and 11
This circuit amplifies the microphone signal to a level suitable for the Larsen limiter detector. The gain is set by external components (see Fig.8). Normally the gain is set to the same level as the microphone amplifier of the transmission circuit, this ensures that the output signal level at output QLA is equal to the line signal level.
The gain between QLA and the microphone input is given by the following equation (the high-pass filter is not taken into account):
A
pre
= V
/ VM = R29 / R26; in the basic application
QLA
R25 = R26 = 10 k
= 10.5 µA
SIC

Larsen limiter current stabilizer (SIC) pin 17

A current reference is set by resistor R36 between SIC and V
. The preferred value is 120 k. The internal reference
SS
current is given by the following equation:
QLA
V
V
QLA
handbook, full pagewidth
R29
C23
R26
V
M
R25
C22
LAI
LAI+
R28
R27
+
V
BB
The gain can be adjusted between 30 dB (R29 = 316 k) and 52 dB (R29 = 4 M). The impedance result of R28 and R27 in parallel must be equal to R29 (e.g. R27 = R28 = 2 × R29).
BB
R32C25
I
R30
DTI
+
LLC
C24
V
SS
R31
DCA
LARSEN
DETECTOR
THL1 THL2
R33
DCA
Fig.8 Larsen limiter preamplifier and voltage/current converter.
March 1992 10
R35 R34
MGR037
Page 11
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

Larsen limiter detector (DTI and DCA) pins 15 and 16

The QLA output signal is AC coupled to the detector input DTI. DTI is biased by potential divider R30 and R31. The voltage applied to DTI of the Larsen level limiter is converted into a current for further processing in this circuit. Current adjustment is achieved using the network connected between DCA and VBB(see Fig.8).
The equation for DC current is:
R30
I
DCA
-----------------------------
R30 R31+
V
BB
The equation for AC current is:
i
DCA
V
DTI
----------- -
R33
forf>
1
-- -
π R33 C25=
2
In the basic application: R30 = 100 k, R31 = 220 k, R33 = 500 , R32 = 100 k
and C25 = 330 nF This results in I
i
DCA
----------- - 2 (mA/V)= V
DTI
= 11 µA and the equation:
DCA
1
-----------------------------
××=
R32 R33+
handbook, halfpage
20 log
g
(dB)
Where:
g
TEA1085; TEA1085A
g
o
6 dB per octave
g
o
f3f2f1
A
pre
-----------=
R33
0
12 dB per octave
18 dB per octave
speech Larsen
Fig.9 Third-order high-pass filter.
i
DCA
-----------=
V
m
20 log f
MGR038
High-pass filter
A third order high-pass filter is created between the microphone input voltage and the current flowing into DCA. The cut-off frequencies (see Fig.9) of the three sections are:
1
-----------------------------
f1
2πR
eg
f2
------------------------------=
2πR33C24
f3
------------------------------ 1/(2πR25C22)== 2πR26C23
1
1
C24
where R
R30 R31×
-----------------------------==
eq
R30 R31+
Where: R25 = R26 and C22 = C23 The filter reduces the sensitivity of the system to own
speech. Normal speech is in the frequency range 300 Hz to 3400 Hz, however, the Larsen signal normally occurs at a frequency > 3 kHz. With the component values as used in the basic application (see Fig.16); f1 = 500 Hz, f2 = 1 kHz and f3 = 3 kHz

Larsen limiter capacitor (LLC) pin 12

A 1 µF capacitor (C26) is connected externally between
and LLC to determine the attack and release timing of
V
SS
the Larsen level limiter in the listen-in and Larsen mode. The timing is also dependent on the value of the resistor connected between SIC and VSS.

Larsen level limiter threshold (THL1 and THL2) pins 13 and 14

When the signal at DTI exceeds the first threshold level the capacitor connected to LLC will start to discharge. The first threshold level is determined by the value of the resistor, R35, connected to THL1 and VSS. The amount of discharge of C26 depends on how much the level of the signal at DTI exceeds the first threshold level (for normal speech the discharge is small). The Larsen effect is generally defined as a signal level of 100 mV(RMS), on line, for a period of more than 100 ms. The Larsen signal must be reduced to a low level within 200 ms. For Larsen signal levels (f > f3 in Fig.9) of 100 mV(RMS) at DTI and, with the component values of Fig.16, the system will switch from the listen-in mode to the Larsen mode in a time period of 100 ms to 200 ms; consequently, the initial Larsen effect will last only for a short period of time.
March 1992 11
Page 12
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
This reaction time is the 'attack delay time' and ensures minimum sensitivity of the system for own speech.
The first threshold level at DTI is determined by the equation:
V
DTI1
Where: I
 
DCA
With the component values given in Fig.16, I thus V
= 18.8 mV.
DTI1

Listen-in mode

During normal speech the discharge of the capacitor connected to LLC is not sufficient to reach the threshold level whereby the system switches to the Larsen mode. This is because normal speech is not continuous, the discharge of C26 is slow (attack delay) and the charge is fast. The slope of V
V
LLC
---------------- -=
S
1i
τ
With C26 = 1 µF and R36 = 120 k this results in S
= 10 V/s.
1i
Discharge of the capacitor at LLC occurs when the signal at DTI exceeds V
the attack delay time t equation:
ad
C26 R36×
--------------------------------------=
23k1×()×
t
I
1.25
-----------
R25
DCA
----------- -
2
2R33×× if f > f3 in Fig.9()=
= the DC current into DCA
during charge is given in the equation:
LLC
1.25
---------------------------- -
C26 R36×
, thus for a continuous signal at DTI
DTI1
ad
Vs()=
(see Fig.10) is determined by the
DCA
= 11 µA
TEA1085; TEA1085A

Larsen mode

After the 'attack delay time' the circuit switches from the listen-in mode to the Larsen mode. The gain of the loudspeaker amplifier is reduced quickly to a value
= Larsen attack time, see Fig.10) whereby the
(t
LAa
residual Larsen signal is determined by a second threshold level. This level can be set by resistor R34 connected between THL2 and V level must always be selected at a lower level than the first threshold level thus R34 > R35. The time taken to effect gain reduction is very short. In the Larsen mode the circuit acts as a dynamic limiter with peak detector and regulates the gain so that the signal level at DTI is determined by the second threshold level V The second threshold level at DTI is determined by the equation:
V
DTI2
Where: I
 
DCA
I
1.25
-----------
R34
DCA
----------- -
2 R33 if f > f3 in Fig.9()××=
2
= the DC current into DCA
With the component values given in Fig.16, V
= 6.9 mV.
DTI2
The charge current in the Larsen mode is reduced to half the charge current in the listen-in mode.
The slope of V
during charge (see Fig.10) is given in the
LLC
equation:
V
LLC
---------------- -
S
la
τ
1.25
--------------------------------------
2C26× R34×
Where: C26 = 1 µF and R36 = 100 k, S
. The second threshold
SS
DTI2
Vs()==
= 5 V/s
la
.
Where k = t
1
/ T
The duty cycle is determined by the time in which the first threshold level (V
) is exceeded by the signal level at
DTI1
DTI (see Fig.11) thus for large signals; k 0.5. With the component values given in Fig.16; k 0.457 for signals 100 mV(RMS). Consequently 120 ms tad≤ 160 ms, for V
100 mV(RMS)
DTI
March 1992 12
When the Larsen effect stops (total open-loop gain< 1) the gain of the loudspeaker amplifier will return to its normal value in a time period known as the 'Larsen release time'
). This time period is determined by capacitor C26
(t
LAr
connected to LLC and resistor R36 connected to SIC. Where: C26 = 1 µF and R36 = 120 k, t
= 250 ms
LAr
In practice the choice of the threshold levels (determined by R35 and R34) depends on the sensitivity of the microphone and loudspeaker, the send and receive gains, sidetone suppression and the acoustical properties which are determined by the cabinet of the telephone set.
Page 13
Philips Semiconductors Preliminary specification

Listening-in circuit for line-powered telephone sets
handbook, full pagewidth
V
V
DTI
LLC
0.5 V
0 V
slope S
1
li
listen-in mode listen-in modeLarsen mode
TEA1085; TEA1085A
slope S
la
0.63 V
t
ad
t
LAa
t
LAr
MGR039
Where:
Change of receive gain
handbook, full pagewidth
Where:
t
1
k
--- -=
T
G
v
--------- -=
G
vo
Nominal receive gain = 20 log Gvo= 35 dB
Fig.10 Dynamic behaviour of Larsen limiter (in open-loop condition).
V
DTI
^
V
DTI
V
DTI1
t
1
T
MGR040
=
k0.5–
V
DTI1
-------------- -
sin
arc

ˆ

V
----------------------------------------
DTI
π
Fig.11 Definition of duty cycle k.
March 1992 13
Page 14
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V V I
SUP
P
T T T
SUP
SREF n
tot
amb stg j
positive supply voltage
continuous 12 V during switch-on or line interruption 13.2 V repetitive supply voltage from 1 ms to 5 s with 12 current
28 V limiting resistor in series with supply
supply reference voltage VSS− 0.5 V
+ 0.5 V
SUP
voltage on all other pins VSS − 0.5 VBB + 0.5 V supply current
TEA1085/TEA1085A see Fig.12 120 mA TEA1085T/TEA1085AT see Fig.13 120 mA
total power dissipation T
= 75 °C;
amb
Tj = 125 °C
TEA1085/TEA1085A 1W
TEA1085T/TEA1085AT 666 mW operating ambient temperature range 25 +75 °C storage temperature range 40 +125 °C junction temperature −+125 °C

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS
R
th j-a
from junction to ambient in free air
TEA1085/TEA1085A 50 K/W TEA1085T/TEA1085AT note 1 75 K/W
Note
1. Device mounted on a glass epoxy board 40.1 × 19.1 × 1.5 mm.
THERMAL
RESISTANCE
March 1992 14
Page 15
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
(3)
V
MGR041
(2)
SUP
(1)
(V)
130
handbook, halfpage
I
SUP
(mA)
110
90
70
50
30
212
(1) T
amb
(2) T
amb
(3) T
amb
46810
= 55 °C; P = 65 °C; P = 75 °C; P
= 1.4 W.
tot
= 1.2 W.
tot
= 1.0 W.
tot
Fig.12 TEA1085/TEA1085A safe operating area.
TEA1085; TEA1085A
130
handbook, halfpage
I
SUP
(mA)
110
90
(5)
70
50
30
212
(1) T
amb
(2) T
amb
(3) T
amb
(4) T
amb
(5) T
amb
46810
=35°C; P = 45 °C; P = 55 °C; P = 65 °C; P = 75 °C; P
= 1.2 W.
tot
= 1.07 W.
tot
= 0.93 W.
tot
= 0.8 W.
tot
= 0.666 W.
tot
Fig.13 TEA1085T/TEA1085AT safe operating
area.
(4)
(2)
(3)
V
SUP
MGR042
(1)
(V)
March 1992 15
Page 16
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets

CHARACTERISTICS

= 4.2 V; VSS = 0 V; I
V
SREF
OFF (listening-in mode); MUTE (TEA1085A) = HIGH (listening-in mode); GSC1 = GSC2 = LOW; 50 loudspeaker; no R38; test circuit Fig.14; unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supplies
V
SUP
V
SUP-SREF
V
BB
V
BB
V
BB
I
SUP
minimum DC input voltage VBB + 0.7 V internal reference voltage 275 315 355 mV stabilized supply voltage no R38; I
variation from I
= 15 to 120 mA
SUP
/T variation with temperature no R38; I
minimum operating current 4.2 5.5 mA THD distortion of AC signal on SUP V V
no(RMS)
noise between SUP and V
current consumption in
power-down condition I
SUP
I
BB
Loudspeaker amplifier inputs LSI1 and LSI2
|Zi| input impedance
G
G
G
v
v
v
voltage gain with 50 load I
variation with signal level I
variation with frequency
referred to 1 kHz
G
v
variation with temperature
referred to 25 °C
= 15 mA; V
SUP
= 0 V(RMS); f = 800 Hz; T
SUP
= 15 mA 3.4 3.6 3.8 V
SUP
= 25 °C; PD = LOW; MUTE (TEA1085) =
amb
10 mV
R38 = 39.2 k between
EE
pins V V I
SUP
SS
= 5.2 V;
SREF
= 15 mA
SUP(RMS)
and VA;
SUP
= 1 V 0.3 %
= 15 mA tbf 0.2 tbf V
4.2 4.45 4.7 V
−−72 dBmp
PD = HIGH
V
= 4.5 V 55 75 µA
SUP
VBB = 3.6 V 400 550 µA
single ended 7.5 9.5 11.5 k differential 15 19 23 k
= 15 mA;
SUP
Vi = 1.8 mV(RMS) single ended 34 35 36 dB BTL output 39.9 40.9 41.9 dB
= 50 mA;
SUP
Vi = 1.8 mV(RMS) and 14 mV(RMS)
single ended −+0.1 0.4 dB BTL output −+0.2 0.6 dB f = 300 Hz and 3400 Hz;
Vi = 1.8 mV(RMS) single ended −± 0.1 dB BTL output −± 0.1 dB T
= 25 to +75 °C
amb
single ended −± 0.4 dB BTL output −± 0.5 dB
March 1992 16
Page 17
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Loudspeaker outputs QLS1 and QLS2
V
o(p-p)
output voltage (peak-to-peak
value)
single ended I
bridge tied load I
THD total harmonic distortion V
single ended I
bridge tied load I
V
o(p-p)
output voltage (peak-to-peak
value)
single ended I
Dynamic limiter
THD total harmonic distortion Vi = 22 mV(RMS)
single ended I
bridge tied load I
t
att
dynamic behaviour of limiter
attack time; Vi jumps from
10 mV(RMS) to 65 mV(RMS)
voltage limiter I current limiter I V
limiter I
BB
t
rel
release time; Vi jumps from
65 mV(RMS) to 10 mV(RMS) V
BBO
threshold VBB limiter below
which gain reduction starts V
no(RMS)
noise output voltage 1 k between inputs
single ended 170 −µV bridge tied load 350 −µV
Vi = 22 mV(RMS)
= 9 mA; note 1 1.2 1.45 V
SUP
I
= 17 mA; note 2 2.5 2.9 V
SUP
= 23.5 mA; note 2 2.5 2.9 V
SUP
I
= 32 mA; note 3 3.5 4.0 V
SUP
= 22 mV(RMS)
i
= 9 mA 0.4 2 %
SUP
I
= 17 mA 0.7 2 %
SUP
= 23.5 mA 0.4 2 %
SUP
Vi = 22 mV(RMS)
= 17 mA;
SUP
V
VEE = 1 V(RMS)
SUP
1.75 2.15 V
+10 dB
= 9 mA 0.5 10 %
SUP
= 17 mA 1.2 10 %
I
SUP
= 23.5 mA 0.6 10 %
SUP
single ended load
= 17 mA 25ms
SUP
= 12 mA 500 tbf ms
SUP
= 9 mA 10 ms
SUP
I
= 17 mA tbf 75 tbf ms
SUP
I
= 9 mA tbf 2.95 tbf V
SUP
LSI1, LSI2; psophometrically weighted (P53 curve)
Logic gain control
G
v
reduction of voltage gain Vi = 1.8 mV(RMS)
GSC2 = 0, GSC1 = 1 5.8 6.3 6.8 dB GSC2 = 1, GSC1 = 0 11.7 12.2 12.7 dB GSC2 = 1, GSC1 = 1 17 18 19 dB
March 1992 17
Page 18
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Larsen limiter preamplifier
operational amplifier G
v0
f
p1
f
p2
G
B
G
v
G
v
Larsen limiter detector
V
DCA-VDTI
G
v
V
THL1
V
THL2
t
LIr
t
ad
t
LAa
t
LAr
V
LLC
−∆V
LLC
G
v
open-loop gain 92 dB 1st pole 120 Hz 2nd pole 3.3 MHz unity gain bandwidth 4 MHz
voltage gain f = 3 kHz;
51 52 53 dB R26 = 10 k; R29 = 4 M
gain adjustment range 30 52 dB
voltage to current convertor DC offset voltage VBB − V voltage gain from DTI to DCA V
DTI
= 1 V 25 1 +25 mV
DTI
= 100 mV(RMS);
tbf 0.8 tbf dB f = 3 kHz
DC voltage at THL1 R35 = 51 k 1.8 1.25 1.33 V DC voltage at THL2 R34 = 100 k 1.8 1.25 1.33 V dynamic behaviour with a
f = 3 kHz; see Fig.15
burst at DTI listen-in release time see Fig.15(a) tbf 40 tbf ms attack delay time see Fig.15(b)
V
jumps from
DTI
160 200 ms
0 to 100 mV (RMS value) V
jumps from
DTI
100 120 ms
0 to 1 V (RMS value)
Larsen attack time see Fig.15(b);
V
= 100 mV(RMS)
DTI
20 tbf ms
Larsen release time see Fig.15(b)
V
jumps from
DTI
tbf 250 tbf ms
100 mV to 0 mV (RMS
value) DC voltage at LLC V reduction of V
to attack
LLC
= 0 V 1.75 1.9 2.0 V
DTI
0.59 0.63 0.68 V
Larsen mode gain reduction V
= 0.7 V 60 tbf tbf dB
LLC
March 1992 18
Page 19
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
MUTE input; TEA1085
(toggle function, positive edge triggered set-reset flip-flop)
V
IL
V
IH
I
MUTE
t
W
P
R
V
BB(MUTE)
G
v
MUTE input; TEA1085A
V
IL
V
IH
I
MUTE
G
v
LOW level input voltage 0 0.3 V HIGH level input voltage 1.5 VBB + 0.4 V input current MUTE = LOW −−22 28 µA minimum input pulse width 50 −µs minimum pulse repetition time 2 ms supply voltage below which
tbf 2 tbf V
MUTE toggle is reset reduction of gain from LSI1,
MUTE = ON 60 100 dB
LSI2 to QLS1, QLS2
LOW level input voltage 0 0.3 V HIGH level input voltage 1.5 VBB + 0.4 V input current MUTE = HIGH 10 20 µA reduction of gain from LSI1,
MUTE = HIGH 60 100 dB
LSI2 to QLS1, QLS2
Power down input
V
IL
V
IH
I
PD
LOW level input voltage 0 0.3 V HIGH level input voltage 1.5 VBB + 0.4 V input current PD = HIGH 2.3 2.8 µA
Logic inputs GSC1 and GSC2
V V I
GSC
IL IH
LOW level input voltage 0 0.3 V HIGH level input voltage 1.5 VBB + 0.4 V input current GSC = HIGH 68µA
Notes
1. Typical output power is 5 mW into 50
2. Typical output power is 20 mW into 50
3. Typical output power is 40 mW into 50
March 1992 19
Page 20
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March 1992 20
I
R1 R20
CC
I
IN A
I
LN
I
SUP
agewidth
(1)
C21 R35
R31R30
C24
(1)
V
DTI
V
BB
R34
R32
(1)
C26
(1)
C25
R33
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
telephone sets
15 1
8
2
7
3
I
line
(1) To TEA1060 (SLPE)
The DC current is divided as follows:
V
SUP SREF
V
-------------------------------=
SUP SREF
R20
-------------------------------=
R20
I
SUPIIN
I
LN
The pins not shown in the TEA1060 are left open. An impedance in series with pin SUP (e.g. an ammeter) should be avoided as it interferes with the value of I
C1
TEA1060
6
5
10
91618
R5
.
LN
C3
R9
V
LSI
423 14
19
5
6
124 18 8
C20
(1) (1)
V
BB
13
TEA1085
TEA1085A
C31
TEA1085
for
(1)
12
V
BB
for
TEA1085A
10
21
22
R36
R29
9
V
BB
R28
R27
C27
R26
R25
C23
V
m
C22
R
L
50
MGR043
16
720 1723
C28
1115
(1)
(1)
TEA1085; TEA1085A
Fig.14 Test circuit.
Page 21
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
Table 2 Component values in test circuit Fig.14
COMPONENT CONDITION VALUE UNIT
Resistor
R1 620 R5 3.6 k R9 20 R20 150 R25 10 k R26 10 k R27 8 M R28 8 M R29 4 M R30 100 k R31 220 k R32 100 k R33 500 R34 100 k R35 51 k R36 120 k
TEA1085; TEA1085A
Capacitor
C1 100 µF C3 4.7 µF C20 470 µF C21 68 pF C22 2.2 µF C23 2.2 µF C24 100 nF C25 330 nF C26 1 µF C27 220 µF C28 330 nF C31 TEA1085 only 10 nF
March 1992 21
Page 22
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
handbook, full pagewidth
V
LLCO
V
DTI
200 ms
0.63 V
V
LLC
t
ad
t
LAa
t
LAr
TEA1085; TEA1085A
V
DTI
100 ms
V
LLC
t
LIr
MGR044
(b) Attack delay (tad), Larsen attack time (t Larsen release time (t V
= 100 mV(RMS) and 1 V(RMS); f = 3 kHz.
DTI
LAr
);
Fig.15 Test signals for Larsen level limiter.
LAa
),
(a) Listen-in release time (t V
= 100 mV(RMS); f = 3 kHz.
DTI
LIr
);
March 1992 22
Page 23
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March 1992 23
L1
handbook, full pagewidth
(1)
R31R30
V
BB
(1)
R32
(1)
C25
(1)

APPLICATION INFORMATION

Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
telephone sets
LINE
TONE
DIALLER
DP DP
DP
interrupt
C1
R1 R20
15 1
13
TEA1060
10 16 18
C3
C21 R35
423 14
12
8
7
C2
5
DP
R24
C29
RV20
C30
C11
19 9
5
6
12418 8
C32 C20 R38R9
(1) (1)
V
BB
(1)
R34
13
TEA1085
TEA1085A
C31
for
TEA1085
12
(1)
C26
16
V
BB
for TEA1085A
R33
720 1723
C28
C24
10
21
22
R36
V
R29
BB
R28
R27
C27
R26
R25
(1)
C23
to TEA1060 pins 7 and 8
C22
MLA039
TEA1085; TEA1085A
1115
(1)
(1)
(1) To TEA1060 (SLPE).
Fig.16 Basic application of TEA1085/TEA1085A and TEA1060.
Page 24
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets
The basic application circuit of the TEA1085/TEA1085A is illustrated in Fig.16. Only the most important components of the TEA1060 part are shown, other components and their values are given in the TEA1060 Data sheet. The supply pin (VBB) of the TEA1085/TEA1085A can also be used to supply peripheral circuits (e.g. microcontrollers, diallers etc.). Further information will be published in the TEA1085 application report.
Table 3 Component values in application circuit Fig.16
COMPONENT CONDITION VALUE UNIT
Resistor
R20 150 R24 note 1 1 k R25 10 k R26 10 k R27 note 1 3.3 M R28 note 1 3.3 M R29 note 1 1.65 M R30 100 k R31 220 k R32 100 k R33 500 R34 100 k R35 51 k R36 120 k RV20 note 1 1 k
Capacitor
C11 4.7 nF C20 470 µF C21 47 pF C22 4.7 nF C23 4.7 nF C24 4.7 nF C25 330 nF C26 1 µF C27 47 µF C28 330 nF C29 220 nF C30 220 nF C31 TEA1085 only 10 nF
Coil
L1 150 µH
Note
1. Value depends on the gain setting of the transmission circuit.
March 1992 24
Page 25
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets

PACKAGE OUTLINES

DIP24: plastic dual in-line package; 24 leads (600 mil)
D
seating plane
L
Z
24
e
b
TEA1085; TEA1085A

SOT101-1

M
E
A
2
A
A
1
w M
b
1
13
c
(e )
1
M
H
pin 1 index
1
0 5 10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
A
A
UNIT
inches
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
max.
mm
OUTLINE VERSION
SOT101-1
1 2
min.
max.
0.066
0.051
IEC JEDEC EIAJ
051G02 MO-015AD
1.7
1.3
b
b
1
0.53
0.38
0.021
0.015
0.32
0.23
0.013
0.009
REFERENCES
cD E e M
32.0
31.4
1.26
1.24
12
scale
14.1
13.7
0.56
0.54
E
(1)(1)
e
L
3.9
3.4
EUROPEAN
PROJECTION
M
15.80
15.24
0.62
0.60
E
17.15
15.90
0.68
0.63
1
0.15
0.13
H
w
0.252.54 15.24
0.010.10 0.60
ISSUE DATE
92-11-17 95-01-23
Z
max.
2.25.1 0.51 4.0
0.0870.20 0.020 0.16
(1)
March 1992 25
Page 26
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
SO24: plastic small outline package; 24 leads; body width 7.5 mm
D
c
y
Z
24
13
TEA1085; TEA1085A

SOT137-1

E
H
E
A
X
v M
A
pin 1 index
1
e
0 5 10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
A
max.
2.65
0.10
A1A
0.30
0.10
0.012
0.004
2.45
2.25
0.096
0.089
A
0.25
0.01
b
3
p
0.49
0.32
0.36
0.23
0.019
0.013
0.014
0.009
2
UNIT
inches
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
(1)E(1) (1)
cD
15.6
15.2
0.61
0.60
12
w M
b
p
scale
eHELLpQ
7.6
1.27
7.4
0.30
0.050
0.29
10.65
10.00
0.419
0.394
A
1.4
0.055
Q
2
A
1
detail X
1.1
1.1
0.4
0.043
0.016
1.0
0.043
0.039
0.25
0.01
L
p
L
(A )
0.25 0.1
0.01
A
3
θ
ywv θ
Z
0.9
0.4
0.035
0.004
0.016
o
8
o
0
OUTLINE
VERSION
SOT137-1
IEC JEDEC EIAJ
075E05 MS-013AD
REFERENCES
March 1992 26
EUROPEAN
PROJECTION
ISSUE DATE
95-01-24 97-05-22
Page 27
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
SOLDERING Introduction
There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used.
This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in
“Data Handbook IC26; Integrated Circuit Packages”
our (order code 9398 652 90011).
DIP
S
OLDERING BY DIPPING OR BY WAVE
The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (T printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit.
R
EPAIRING SOLDERED JOINTS
Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds.
SO
REFLOW SOLDERING Reflow soldering techniques are suitable for all SO
packages.
stg max
). If the
TEA1085; TEA1085A
Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C.
Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.
AVE SOLDERING
W Wave soldering techniques can be used for all SO
packages if the following conditions are observed:
A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used.
The longitudinal axis of the package footprint must be parallel to the solder flow.
The package footprint must incorporate solder thieves at the downstream end.
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
EPAIRING SOLDERED JOINTS
R Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement.
March 1992 27
Page 28
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered
TEA1085; TEA1085A
telephone sets

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1992 28
Page 29
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
TEA1085; TEA1085A
NOTES
March 1992 29
Page 30
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
TEA1085; TEA1085A
NOTES
March 1992 30
Page 31
Philips Semiconductors Preliminary specification
Listening-in circuit for line-powered telephone sets
TEA1085; TEA1085A
NOTES
March 1992 31
Page 32
Philips Semiconductors – a worldwide company
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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381
Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381
Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
Printed in The Netherlands 415102/00/02/pp32 Date of release: March 1992 Document order number: 9397 750 nnnnn
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